专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2008240115A SPUTTERING TARGET FOR Sn ALLOY FILM DEPOSITION ON OPTICAL INFORMATION RECORDING MEDIUM 审中-公开
标题翻译：用于锡合金薄膜沉积的光学信息记录介质的溅射目标
公开(公告)号：JP2008240115A
公开(公告)日：2008-10-09
申请号：JP2007085313
申请日：2007-03-28
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： FUJII HIDEO , MATSUZAKI HITOSHI
IPC分类号： C22C13/00 , G11B7/26
摘要： PROBLEM TO BE SOLVED: To suppress warpage in a sputtering target for Sn alloy film deposition occurring when an Sn alloy film on an optical information recording medium is continuously deposited by sputtering. SOLUTION: A melted sputtering target ingot is forged at a low forging rate to obtain the sputtering target with objective structure composed of an Sn alloy comprising Ni and Co and having acicular and bar-shaped intermetallic compounds of Ni, Co and Sn intermingled into an Sn matrix. In the intermetallic compounds, little black breaks and hole parts are present and the intermetallic compounds are not finely broken, and the Vickers hardness of the target is controlled to ≥20 MPa and its 0.2% proof stress is controlled to ≥20 MPa. In this way, the occurrence of the warpage in an Sn alloy sputtering target upon the continuous deposition of an Sn alloy film by sputtering is suppressed. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了抑制当通过溅射连续沉积光学信息记录介质上的Sn合金膜时发生的Sn合金膜沉积的溅射靶的翘曲。解决方案：以低的锻造速度锻造熔融的溅射靶锭，以获得由包含Ni和Co的Sn合金构成的目标结构的溅射靶，并且具有混合的Ni，Co和Sn的针状和棒状的金属间化合物成为Sn基体。在金属间化合物中，存在小的黑色断裂和孔部分，并且金属间化合物没有细碎，目标的维氏硬度控制在≥20MPa，其0.2％的屈服应力控制在≥20MPa。以这种方式，抑制了通过溅射连续沉积Sn合金膜时Sn合金溅射靶中翘曲的发生。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2009293108A METHOD FOR PRODUCING Al-BASED ALLOY SPUTTERING TARGET MATERIAL 有权
标题翻译：生产铝基合金溅射靶材的方法
公开(公告)号：JP2009293108A
公开(公告)日：2009-12-17
申请号：JP2008150527
申请日：2008-06-09
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： TOKUHIRA MASAYA , MATSUZAKI HITOSHI , TAUCHI HIRONORI , TAKAGI KATSUHISA , IWASAKI YUKI , NAKAI JUNICHI
IPC分类号： C23C14/34 , B22F1/00 , B22F3/15 , B22F9/08 , C22C1/04 , C22C21/00
CPC分类号： C22C1/0416 , B22F2998/10 , C23C14/3414 , B22F9/082 , B22F1/0003
摘要： PROBLEM TO BE SOLVED: To provide a method for producing an Al-based alloy sputtering target material comprising a rare earth element and a high melting point element having a melting point higher than that of Al at a high yield. SOLUTION: The method includes: a stage where a first powder of an Al-based alloy comprising a rare earth element produced by an atomizing process is prepared; a stage where the first powder and one or more of a second powder composed of a high melting point element X having a melting point higher than that of Al are mixed; and a stage where a powdery mixture of the first powder and the second powder is made dense. In the mixing stage, the maximum particle diameter (a) of the first powder is 10 to 200 μm, the maximum particle diameter (b) of the second powder is 10 to 150 μm and the ratio between the (a) and (b), ((a)/(b)) is 0.5 to 5. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种含有稀土元素和熔点高于Al的高熔点元素的Al系合金溅射靶材的制造方法。解决方案：该方法包括：制备包含通过雾化工艺制备的稀土元素的Al基合金的第一粉末的阶段; 混合第一粉末和由熔点高于Al的高熔点元素X组成的第二粉末中的一种或多种的阶段; 并且使第一粉末和第二粉末的粉末状混合物致密的阶段。在混合阶段，第一粉末的最大粒径（a）为10〜200μm，第二粉末的最大粒径（b）为10〜150μm，（a）和（b），（（a）/（b））为0.5〜5.版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2005036291A Ag BASED SPUTTERING TARGET AND ITS PRODUCTION METHOD 有权
标题翻译：基于Ag的溅射目标及其生产方法
公开(公告)号：JP2005036291A
公开(公告)日：2005-02-10
申请号：JP2003275621
申请日：2003-07-16
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： TAKAGI KATSUHISA , NAKAI JUNICHI , TAUCHI HIRONORI , MATSUZAKI HITOSHI , FUJII HIDEO
IPC分类号： C22F1/14 , C22C5/06 , C22F1/00 , C23C14/34
CPC分类号： C22C5/06 , C22F1/14 , C23C14/3414
摘要： PROBLEM TO BE SOLVED: To provide an Ag based sputtering target capable of stably and continuously depositing a thin film having excellent uniformity of a film thickness and a componential composition in the film face direction without interruption from the start of its use to the completion.
SOLUTION: In the Ag based sputtering target, cutting is performed at the faces parallel to the sputtering face to expose a plurality of sputtering faces, a plurality of parts are selected for each exposed sputtering face, the following values A and B are calculated on the basis of the crystal grain sizes in all the selected parts, and, provided that the higher one in the values A and B is defined as the three-dimensional variation of the crystal grain sizes, the three-dimensional variation of the crystal grain sizes is ≤18%: value A=(D
max -D
ave )/D
ave ×100(%), and value B=(D
ave -D
min )/D
ave ×100(%)(wherein, D
max denotes the maximum one of the crystal grain sizes in all the selected parts, D
min denotes the minimum one, and D
ave denotes the average value).
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种能够稳定且连续地沉积薄膜厚度均匀性和膜面方向上的组成成分的薄膜的Ag系溅射靶，而不会从使用开始到中断地沉积完成。解决方案：在Ag基溅射靶中，在与溅射面平行的面上进行切割以暴露多个溅射面，为每个暴露的溅射面选择多个部分，以下值A和B为基于所有选择的部分中的晶粒尺寸计算，并且如果将值A和B中较高的值定义为晶粒尺寸的三维变化，则晶体的三维变化晶粒尺寸≤18％：值A =（D max -D ave ）/ D ave ×100（％），值B =（D ave -D min ）/ D ave ×100（％）（其中，D max 所有选定部分的最大晶粒尺寸D min 表示最小值，D ave 表示平均值。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2004339585A Ag-Bi-BASED ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR 有权
公开(公告)号：JP2004339585A
公开(公告)日：2004-12-02
申请号：JP2003139293
申请日：2003-05-16
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： TAKAGI KATSUHISA , NAKAI JUNICHI , TAUCHI HIRONORI , SATO TOSHIKI , MATSUZAKI HITOSHI , FUJII HIDEO
IPC分类号： C22F1/14 , B32B3/02 , C22C5/00 , C22C5/06 , C22C12/00 , C22F1/00 , C23C14/06 , C23C14/14 , C23C14/34 , G11B7/24 , G11B7/258 , G11B7/26 , H01L21/285
CPC分类号： C22C5/06 , C23C14/3414
摘要： PROBLEM TO BE SOLVED: To inhibit the remarkable lowering of the yield factor of a Bi amount in a thin film formed with the use of an Ag-Bi alloy sputtering target. SOLUTION: The Ag-Bi-based alloy sputtering target contains Bi dissolved in Ag. The sputtering target has the intensity of precipitated Bi of 0.01 atom% -1 or less, when it is calculated, for instance, in accordance with a predetermined expression on the basis of an X-ray diffraction measurement result, and has an area ratio of the total of predetermined intensities (intensities of levels 3 to 6 among eight levels) in an amount of 89% or more, when an areal distribution of the characteristic X-ray intensity of Bi is measured with an X-ray microanalysis, and the area ratio of each intensity is calculated on the basis of the measurement result. COPYRIGHT: (C)2005,JPO&NCIPI

5. 发明专利

JP2009197310A Sputtering target 审中-公开
标题翻译：飞溅目标
公开(公告)号：JP2009197310A
公开(公告)日：2009-09-03
申请号：JP2008043218
申请日：2008-02-25
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： FUJII HIDEO , MATSUZAKI HITOSHI
IPC分类号： C23C14/34 , B22F9/04 , C22C1/04 , C22C28/00 , G11B7/243 , G11B7/26
CPC分类号： C22C28/00 , B22F2998/10 , C22C1/0483 , C23C14/3414 , B22F9/04 , B22F3/105
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target capable of suppressing occurrence of a target crack. SOLUTION: The sputtering target is produced by mixing the main powder composed of In obtained by pulverizing the ingot of an intermetallic compound region with auxiliary powder of a component composition different from that of the main powder, and sintering the mixture so as to obtain the prescribed component composition. The total content of Si, Al, Fe which are inevitable impurities in the content components therein is ≤300 mass ppm. Also, the intermetallic compound includes In and one or more selected Co and Ni. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够抑制目标裂纹发生的溅射靶。解决方案：溅射靶是通过将由金属间化合物区域的锭粉碎得到的In组成的主粉末与不同于主粉末的组分组成的辅助粉末混合，并将该混合物烧结以获得规定的成分组成。其中含量成分中不可避免的杂质的Si，Al，Fe的总含量为≤300质量ppm。此外，金属间化合物包括In和一种或多种选择的Co和Ni。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2009132962A Ag-BASED SPUTTERING TARGET 有权
标题翻译：基于Ag的飞溅目标
公开(公告)号：JP2009132962A
公开(公告)日：2009-06-18
申请号：JP2007309248
申请日：2007-11-29
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： MATSUZAKI HITOSHI
IPC分类号： C23C14/34 , B22F9/08 , C22C5/06 , C22F1/00 , C22F1/14 , C23C14/14
CPC分类号： C23C14/3414 , C22C5/06 , C22F1/14
摘要： PROBLEM TO BE SOLVED: To provide an Ag-based sputtering target useful for depositing an Ag-based thin film having very excellent in-plane uniformity.
SOLUTION: The mean crystal grain size d
ave of the sputtering face of the Ag-based sputtering target is ≤10 μm when the mean crystal grain size d
ave is measured according to the procedures (1)-(3). (Procedure 1) A plurality of locations in the sputtering face are optionally selected and a micrograph of each selected location ( magnification : 40-2,000 times) is taken. (Procedure 2) Four or more straight lines are drawn in a grid pattern or radially on each micrograph, the number n of grain boundaries existing on the straight lines is investigated, and a crystal grain size d is calculated for each straight on the basis of the following equation d=L/n/m, wherein L denotes the length of the straight line, n denotes the number of grain boundaries existing on the straight lines, and m denotes the magnification of the micrograph. (Procedure 3) The mean value of the crystal grain sizes d of all selected locations is defined as the mean crystal grain size d
ave of the sputtering face.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供用于沉积具有非常优异的面内均匀性的Ag基薄膜的Ag基溅射靶。解决方案：当平均晶粒尺寸d ave 时，Ag系溅射靶的溅射面的平均晶粒尺寸d ave 为≤10μm 根据程序（1） - （3）测量。（步骤1）可选地选择溅射面中的多个位置，并且取出每个所选择的位置（倍率：40-2,000次）的显微照片。（步骤2）四个或更多条直线以网格图案或每个显微照片上的径向绘制，研究存在于直线上的晶界数n，并且基于每个直线计算晶粒尺寸d 以下等式d = L / n / m，其中L表示直线的长度，n表示直线上存在的晶界数，m表示显微照片的放大率。（步骤3）将所有选择的位置的晶粒尺寸d的平均值定义为溅射面的平均晶粒尺寸d ave 。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2012007237A Ag-BASED SPUTTERING TARGET 审中-公开
标题翻译：基于Ag的飞溅目标
公开(公告)号：JP2012007237A
公开(公告)日：2012-01-12
申请号：JP2011123536
申请日：2011-06-01
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： MATSUZAKI HITOSHI
IPC分类号： C23C14/34 , B22F3/115 , B22F9/08 , C22C5/06 , C23C14/14 , G11B7/258 , G11B7/26
摘要： PROBLEM TO BE SOLVED: To provide an Ag-based sputtering target useful for depositing an Ag-based thin film having extremely excellent in-plane uniformity.SOLUTION: The average crystal grain size dof the sputtering face of the Ag-based sputtering target is not larger than 10 μm when the average crystal grain size dis measured according to procedures (1)-(3). (Procedure 1): A plurality of locations in the sputtering face are optionally selected and a micrograph of each selected location (magnification: 40-2,000 times) is taken. (Procedure 2): Four or more straight lines are drawn in a grid pattern or radially on each micrograph, the number n of grain boundaries present on the straight lines is investigated, and a crystal grain size d is calculated for each straight line on the basis of the following equation d=L/n/m where L denotes the length of the straight line, n denotes the number of grain boundaries present on the straight lines, and m denotes the magnification of the micrograph. (Procedure 3): The average value of the crystal grain sizes d of all selected locations is defined as the average crystal grain size dof the sputtering face.
摘要翻译：要解决的问题：提供一种用于沉积具有非常优异的面内均匀性的Ag基薄膜的Ag基溅射靶。解决方案：当Ag基溅射靶的溅射面的平均晶粒尺寸d ave 不大于10μm，当平均晶粒尺寸d ave 。（步骤1）：任选地选择溅射面中的多个位置，并且取出每个选定位置（倍率：40-2,000次）的显微照片。（步骤2）：四个或更多条直线以网格图案或每个显微照片上的径向绘制，研究直线上存在的晶界数n，并对每条直线上的晶粒尺寸d进行计算下式的基数d = L / n / m其中L表示直线的长度，n表示直线上存在的晶界数，m表示显微照片的放大倍数。（步骤3）将所有选择的位置的晶粒尺寸d的平均值定义为溅射面的平均晶粒尺寸d ave 。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2011084804A Metal oxide-metal composite sputtering target 审中-公开
标题翻译：金属氧化物金属复合溅射靶
公开(公告)号：JP2011084804A
公开(公告)日：2011-04-28
申请号：JP2010028094
申请日：2010-02-10
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： MATSUZAKI HITOSHI , TAKAGI KATSUHISA , JIKO NORIHIRO , TOKUHIRA MASAYA
IPC分类号： C23C14/34 , B41M5/26 , G11B7/243 , G11B7/26
CPC分类号： G11B7/266 , C23C14/3414 , G11B2007/24302 , G11B2007/2432
摘要： PROBLEM TO BE SOLVED: To provide a metal oxide-metal composite sputtering target which has no abnormal discharge and cracks and is useful for the formation of a recording layer for an optical information recording medium, comprising a metal oxide and a metal. SOLUTION: Specifically disclosed is a composite sputtering target containing a metal oxide A and a metal B. By the sintering of raw material powder in which the maximum value of the circle-equivalent diameter of the metal oxide is low and grain size is regulated, the maximum value of the circle-equivalent diameter of the metal oxide A is controlled to 200 μm or less. The metal oxide A may be flocculated. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种金属氧化物 - 金属复合溅射靶，其不产生异常放电和裂纹，并且可用于形成用于光学信息记录介质的记录层，包括金属氧化物和金属。解决方案：具体公开了包含金属氧化物A和金属B的复合溅射靶。通过烧结金属氧化物的当量圆直径的最大值和晶粒尺寸为将金属氧化物A的圆当量直径的最大值控制在200μm以下。金属氧化物A可能被絮凝。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2014043643A SPUTTERING TARGET FOR FORMING Cu ALLOY THIN FILM AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：用于形成铜合金薄膜的溅射靶及其制造方法
公开(公告)号：JP2014043643A
公开(公告)日：2014-03-13
申请号：JP2013152854
申请日：2013-07-23
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： GOTO YASUSHI , MATSUZAKI HITOSHI
IPC分类号： C23C14/34 , C22C9/00 , C22C9/01 , C22C9/02 , C22C9/04 , C22C9/05 , C22C9/06 , C22F1/00 , C22F1/08
CPC分类号： C23C14/3414 , C23C14/165 , H01L23/53233 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target for forming Cu alloy thin films which is used in forming Cu-Mn alloy thin films useful for electrode films of display devices such as liquid crystal displays, wherein, in sputtering, the sputtering target reduces abnormally grown cluster particles and generates little particles or splashes, and to provide a manufacturing method of the target.SOLUTION: A sputtering target for forming Cu alloy thin films according to the invention includes at least Mn of which content is 2 atom% or more and 20 atom% or less. The target is controlled such that Vickers hardness of the cross sectional plane at t/2 in the target thickness direction is 50HV or more and 100HV or less.
摘要翻译：要解决的问题：提供用于形成用于形成用于液晶显示器等显示装置的电极膜的Cu-Mn合金薄膜的Cu合金薄膜的溅射靶，其中在溅射中溅射靶异常地降低生成的簇粒子并且产生很少的颗粒或飞溅物，并提供靶材的制造方法。解决方案：根据本发明的用于形成Cu合金薄膜的溅射靶包括至少Mn含量为2原子％以上且20以上原子％以下。控制目标，使得目标厚度方向上t / 2处的横截面的维氏硬度为50HV以上且100HV以下。

10. 发明专利

JP2009057580A Ag ALLOY SPUTTERING TARGET, AND ITS MANUFACTURING METHOD 有权
标题翻译： Ag合金喷射目标及其制造方法
公开(公告)号：JP2009057580A
公开(公告)日：2009-03-19
申请号：JP2007223152
申请日：2007-08-29
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： TAKAGI KATSUHISA , MORIMOTO EIICHI , MATSUZAKI HITOSHI , TAUCHI HIRONORI
IPC分类号： C23C14/34 , B22F3/15 , C22C5/06 , C23C14/06 , G11B7/26
CPC分类号： C23C14/3414 , B22F3/15 , C22C5/06 , G11B7/259
摘要： PROBLEM TO BE SOLVED: To provide an Ag-Ta-Cu alloy sputtering target, wherein a thin film excellent in uniformity of a component in a film surface direction (within a film plane), is stably formed.
SOLUTION: The sputtering target consists of Ag alloy containing, by atom, 0.6-10.5% Ta and 2-13% Cu. The image analysis of a sputtering surface of the sputtering target results in that (1) the total area of Ta grains of the circle-equivalent diameter of 10-50 μm to the total area of Ta grains is ≥60 area%, and the average distance between centers of gravity of Ta grains is 10-50 μm, and (2) the total area of Cu grains of the circle-equivalent diameter of 10-50 μm to the total area of Cu grains is ≥70 area%, and the average distance between centers of gravity of Cu grains is 60-120 μm.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供Ag-Ta-Cu合金溅射靶，其中稳定地形成膜表面方向（在膜平面内）的成分的均匀性优异的薄膜。解决方案：溅射靶由含有0.6-10.5％Ta和2-13％Cu的原子的Ag合金组成。溅射靶的溅射表面的图像分析结果是（1）圆当量直径为10-50μm的Ta晶粒与Ta晶粒的总面积的总面积为≥60面积％，平均 Ta颗粒重心之间的距离为10〜50μm，（2）圆当量直径为10〜50μm的Cu颗粒的总面积与Cu颗粒的总面积为≥70面积％， Cu颗粒重心之间的平均距离为60-120μm。版权所有（C）2009，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式