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1. 发明申请

US20100090372A1 COATING FORMATION AGENT FOR PATTERN MICRO-FABRICATION, AND MICROPATTERN FORMATION METHOD USING THE SAME 审中-公开
标题翻译：用于图案微型制造的涂覆成型剂及使用其的微孔形成方法
公开(公告)号：US20100090372A1
公开(公告)日：2010-04-15
申请号：US12449024
申请日：2007-11-19
申请人： Kiyoshi Ishikawa , Atsushi Sawano , Kazumasa Wakiya
发明人： Kiyoshi Ishikawa , Atsushi Sawano , Kazumasa Wakiya
IPC分类号： B29C61/02 , C09D133/00 , C09D139/06
CPC分类号： G03F7/40 , H01L21/0273
摘要： Provided are a coating formation agent for pattern micro-fabrication, and a method for forming a micropattern using the same, which enables: suppression and/or control of variation of the micro-fabrication size without being accompanied by defect generation following the micro-fabrication process even in ultramicro-fabrication particularly on the order of no greater than 120 nm, or a micro-fabrication process of a resist pattern with an increased aspect ratio; maintainance of a favorable resist pattern configuration after the micro-fabrication process while keeping the desired micro-fabrication size; and also avoidance of defects resulting from development of bacteria and the like after application of the coating formation agent for pattern micro-fabrication. The coating formation agent for pattern micro-fabrication of the present invention is a coating formation agent used for forming a micropattern by coating on a substrate having a photoresist pattern, the coating formation agent including: as component (a), a water soluble polymer; and, as component (b), at least one selected from quaternary ammonium hydroxide, alicyclic ammonium hydroxide and morpholinium hydroxide.
摘要翻译：提供了用于图案微制造的涂层形成剂以及使用其形成微图案的方法，其能够：抑制和/或控制微制造尺寸的变化，而不伴随着微制造后的缺陷产生即使在超微制造中，特别是不大于120nm的量级，或具有增加的纵横比的抗蚀剂图案的微制造工艺，在保持所需的微观制造尺寸的同时，在微细制造工艺之后维持良好的抗蚀剂图案构造; 并且还避免了在施加用于图案微加工的涂层形成剂之后由于细菌等的发展而导致的缺陷。本发明的图案微观制造用涂料形成剂是通过在具有光致抗蚀剂图案的基材上涂布形成微图案而形成的涂料形成剂，该涂料形成剂包括：作为组分（a），水溶性聚合物; 和作为组分（b）的至少一种选自季铵氢氧化物，脂环族氢氧化铵和氢氧化氢鎓。

2. 发明授权

US08367312B2 Detergent for lithography and method of forming resist pattern with the same 失效
标题翻译：光刻用洗涤剂及其形成抗蚀剂图案的方法
公开(公告)号：US08367312B2
公开(公告)日：2013-02-05
申请号：US12087545
申请日：2006-12-08
申请人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Hidekazu Tajima , Atsushi Miyamoto , Tomoya Kumagai , Atsushi Sawano
发明人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Hidekazu Tajima , Atsushi Miyamoto , Tomoya Kumagai , Atsushi Sawano
IPC分类号： C11D7/32 , C11D1/75
CPC分类号： G03F7/322
摘要： Conventional detergents for lithography which contain a surfactant as an active ingredient should have a reduced surfactant concentration because heightened surfactant concentrations result in dissolution of the resin component of a photoresist composition and hence in a dimensional change of a resist pattern. However, the conventional detergents have had a drawback that such a low concentration unavoidably reduces the ability to inhibit pattern falling and defect occurrence. A detergent for lithography is provided which is an aqueous solution containing (A) at least one member selected among nitrogenous cationic surfactants and nitrogenous ampholytic surfactants and (B) an anionic surfactant. This detergent retains a low surface tension even when it has a low concentration. It is effective in inhibiting pattern falling and defect occurrence. It can also inhibit resist patterns from fluctuating in dimension.
摘要翻译：含有表面活性剂作为活性成分的常规的光刻用洗涤剂应具有降低的表面活性剂浓度，因为增加的表面活性剂浓度导致光致抗蚀剂组合物的树脂组分的溶解，并因此导致抗蚀剂图案的尺寸变化。然而，常规洗涤剂具有这样的缺点：这种低浓度不可避免地降低了抑制图案下落和缺陷发生的能力。提供了一种用于光刻的洗涤剂，其是含有（A）至少一种选自含氮阳离子表面活性剂和含氮两性表面活性剂中的成分的水溶液和（B）阴离子表面活性剂。这种洗涤剂即使在低浓度时也保持低的表面张力。有效抑制图形下降和缺陷发生。它也可以抑制抗蚀剂图案的波动。

3. 发明申请

US20090004608A1 Detergent For Lithography And Method Of Forming Resist Pattern With The Same 失效
标题翻译：用于光刻的洗涤剂及其形成抗蚀剂图案的方法
公开(公告)号：US20090004608A1
公开(公告)日：2009-01-01
申请号：US12087545
申请日：2006-12-08
申请人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Hidekazu Tajima , Atsushi Miyamoto , Tomoya Kumagai , Atsushi Sawano
发明人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Hidekazu Tajima , Atsushi Miyamoto , Tomoya Kumagai , Atsushi Sawano
IPC分类号： G03F7/20 , C11D7/32
CPC分类号： G03F7/322
摘要： Conventional detergents for lithography which contain a surfactant as an active ingredient should have a reduced surfactant concentration because heightened surfactant concentrations result in dissolution of the resin component of a photoresist composition and hence in a dimensional change of a resist pattern. However, the conventional detergents have had a drawback that such a low concentration unavoidably reduces the ability to inhibit pattern falling and defect occurrence. A detergent for lithography is provided which is an aqueous solution containing (A) at least one member selected among nitrogenous cationic surfactants and nitrogenous ampholytic surfactants and (B) an anionic surfactant. This detergent retains a low surface tension even when it has a low concentration. It is effective in inhibiting pattern falling and defect occurrence. It can also inhibit resist patterns from fluctuating in dimension.
摘要翻译：含有表面活性剂作为活性成分的常规的光刻用洗涤剂应具有降低的表面活性剂浓度，因为增加的表面活性剂浓度导致光致抗蚀剂组合物的树脂组分的溶解，并因此导致抗蚀剂图案的尺寸变化。然而，常规洗涤剂具有这样的缺点：这种低浓度不可避免地降低了抑制图案下落和缺陷发生的能力。提供了一种用于光刻的洗涤剂，其是含有（A）至少一种选自含氮阳离子表面活性剂和含氮两性表面活性剂中的成分的水溶液和（B）阴离子表面活性剂。这种洗涤剂即使在低浓度时也保持低的表面张力。有效抑制图形下降和缺陷发生。它也可以抑制抗蚀剂图案的波动。

4. 发明申请

US20100035177A1 METHOD FOR FORMING PATTERN, AND MATERIAL FOR FORMING COATING FILM 有权
标题翻译：形成图案的方法和形成涂膜的材料
公开(公告)号：US20100035177A1
公开(公告)日：2010-02-11
申请号：US12443118
申请日：2007-09-13
申请人： Kiyoshi Ishikawa , Jun Koshiyama , Kazumasa Wakiya
发明人： Kiyoshi Ishikawa , Jun Koshiyama , Kazumasa Wakiya
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/40 , H01L21/0337 , H01L21/0338 , Y10S430/128
摘要： A novel method for forming a pattern capable of decreasing the number of steps in a double patterning process, and a material for forming a coating film suitably used in the method for forming a pattern are provided. First resist film (2) is formed by applying a first chemically amplified resist composition on support (1), and thus formed film is selectively exposed, and developed to form multiple first resist patterns (3). Next, on the surface of the first resist patterns (3) are formed multiple coating patterns (5) by forming coating films (4) constituted with a water soluble resin film, respectively. Furthermore, a second chemically amplified resist composition is applied on the support (1) having the coating pattern (5) formed thereon to form second resist film (6), which is selectively exposed and developed to form multiple second resist patterns (7). Accordingly, a pattern including the coating patterns (5) and the second resist patterns (7) is formed on the support (1).
摘要翻译：提供一种用于形成能够减少双重图案化工艺中的台阶数的图案的新颖方法和用于形成图案的方法中适当使用的涂膜形成材料。通过在支撑体（1）上涂覆第一化学放大抗蚀剂组合物形成第一抗蚀剂膜（2），从而形成膜被选择性地曝光并显影以形成多个第一抗蚀剂图案（3）。接下来，通过分别形成由水溶性树脂膜构成的涂膜（4），在第一抗蚀剂图案（3）的表面上形成多个涂布图案（5）。此外，在其上形成有涂层图案（5）的支撑体（1）上施加第二化学放大抗蚀剂组合物以形成第二抗蚀剂膜（6），其被选择性地暴露和显影以形成多个第二抗蚀剂图案（7）。因此，在支撑体（1）上形成包括涂布图案（5）和第二抗蚀图案（7）的图案。

5. 发明授权

US08124312B2 Method for forming pattern, and material for forming coating film 有权
标题翻译：形成图案的方法和用于形成涂膜的材料
公开(公告)号：US08124312B2
公开(公告)日：2012-02-28
申请号：US12443118
申请日：2007-09-13
申请人： Kiyoshi Ishikawa , Jun Koshiyama , Kazumasa Wakiya
发明人： Kiyoshi Ishikawa , Jun Koshiyama , Kazumasa Wakiya
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20 , G03F7/26
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/40 , H01L21/0337 , H01L21/0338 , Y10S430/128
摘要： A novel method for forming a pattern capable of decreasing the number of steps in a double patterning process, and a material for forming a coating film suitably used in the method for forming a pattern are provided. First resist film (2) is formed by applying a first chemically amplified resist composition on support (1), and thus formed film is selectively exposed, and developed to form multiple first resist patterns (3). Next, on the surface of the first resist patterns (3) are formed multiple coating patterns (5) by forming coating films (4) constituted with a water soluble resin film, respectively. Furthermore, a second chemically amplified resist composition is applied on the support (1) having the coating pattern (5) formed thereon to form second resist film (6), which is selectively exposed and developed to form multiple second resist patterns (7). Accordingly, a pattern including the coating patterns (5) and the second resist patterns (7) is formed on the support (1).
摘要翻译：提供一种用于形成能够减少双重图案化工艺中的台阶数的图案的新颖方法和用于形成图案的方法中适当使用的涂膜形成材料。通过在支撑体（1）上涂覆第一化学放大抗蚀剂组合物形成第一抗蚀剂膜（2），从而形成膜被选择性地曝光并显影以形成多个第一抗蚀剂图案（3）。接下来，通过分别形成由水溶性树脂膜构成的涂膜（4），在第一抗蚀剂图案（3）的表面上形成多个涂布图案（5）。此外，在其上形成有涂层图案（5）的支撑体（1）上施加第二化学放大抗蚀剂组合物以形成第二抗蚀剂膜（6），其被选择性地暴露和显影以形成多个第二抗蚀剂图案（7）。因此，在支撑体（1）上形成包括涂布图案（5）和第二抗蚀图案（7）的图案。

6. 发明申请

US20100255429A1 FINE PATTERN FORMING METHOD AND COAT FILM FORMING MATERIAL 审中-公开
标题翻译：精细图案形成方法和涂膜成型材料
公开(公告)号：US20100255429A1
公开(公告)日：2010-10-07
申请号：US12671805
申请日：2008-07-03
申请人： Kiyoshi Ishikawa , Jun Koshiyama , Kazumasa Wakiya
发明人： Kiyoshi Ishikawa , Jun Koshiyama , Kazumasa Wakiya
IPC分类号： G03F7/20
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/40
摘要： Provided are a fine pattern forming method for forming a fine resin pattern having an excellent shape on a supporting body, and a coat film forming material used in the fine pattern forming method. A photosensitive resin composition is applied on the supporting body, selectively exposed and developed to form a first resin pattern. On the surface of the first resin pattern, a coat film composed of a water-soluble resin film is formed to form a coat pattern, then, on the supporting body whereupon the coat pattern is formed, a resin composition containing a photo-acid generating agent is applied, and the entire surface is exposed. Then, the work is cleaned by a solvent, and a second resin pattern wherein a resin film is formed on the surface of the coat pattern is formed. The coat film is formed by using the coat film forming material composed of an aqueous solution containing a water soluble resin and a water soluble cross-linking agent.
摘要翻译：提供一种用于在支撑体上形成具有优异形状的精细树脂图案的精细图案形成方法以及用于精细图案形成方法的涂膜形成材料。将感光性树脂组合物涂布在支撑体上，选择性地曝光和显影以形成第一树脂图案。在第一树脂图案的表面上，形成由水溶性树脂膜构成的涂膜以形成涂层图案，然后在形成涂层图案的支撑体上形成含有产生光酸的树脂组合物涂料，整个表面露出。然后，通过溶剂清洗工件，并且形成在涂层图案的表面上形成树脂膜的第二树脂图案。通过使用由含有水溶性树脂和水溶性交联剂的水溶液构成的涂膜形成材料形成涂膜。

7. 发明授权

US09244358B2 Surface treatment liquid, surface treatment method, hydrophobilization method, and hydrophobilized substrate 有权
标题翻译：表面处理液，表面处理方法，疏水化方法和疏水化底物
公开(公告)号：US09244358B2
公开(公告)日：2016-01-26
申请号：US13123341
申请日：2009-09-15
申请人： Jun Koshiyama , Kazumasa Wakiya
发明人： Jun Koshiyama , Kazumasa Wakiya
IPC分类号： C09K3/18 , G03F7/40 , H01L23/29 , G03F7/16 , H01L21/306 , G03F7/20
CPC分类号： G03F7/405 , C09K3/18 , G03F7/16 , G03F7/2041 , H01L21/306 , H01L23/296 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a surface treatment liquid which enables simple and efficient hydrophobilization of a substrate and prevention of collapse of a resin pattern or etched pattern. Also disclosed are a surface treatment method using the surface treatment liquid, a hydrophobilization method using the surface treatment liquid, and a hydrophobilized substrate. When a substrate is hydrophobilized, the substrate is coated with a surface treatment liquid containing a silylating agent and a hydrocarbon non-polar solvent. When a pattern is prevented from collapse, the surface of a resin pattern formed on a substrate or etched pattern formed on a substrate by etching is treated using a surface treatment liquid containing a silylating agent and a solvent.
摘要翻译：公开了一种表面处理液体，其能够简单且有效地对基材进行疏水化，并防止树脂图案或蚀刻图案的塌陷。还公开了使用表面处理液的表面处理方法，使用表面处理液的疏水化方法和疏水化基材。当底物被疏水化时，用含有甲硅烷基化剂和烃类非极性溶剂的表面处理液涂覆基材。当防止图案塌陷时，通过使用含有甲硅烷基化剂和溶剂的表面处理液对通过蚀刻形成在基板上形成的树脂图案的表面或蚀刻图案进行处理。

8. 发明申请

US20100248477A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating a substrate therewith 有权
标题翻译：用于形成双镶嵌结构的工艺中使用的清洗液和用于处理基材的方法
公开(公告)号：US20100248477A1
公开(公告)日：2010-09-30
申请号：US12801452
申请日：2010-06-09
申请人： Shigeru Yokoi , Kazumasa Wakiya
发明人： Shigeru Yokoi , Kazumasa Wakiya
IPC分类号： H01L21/306 , C11D3/26
CPC分类号： H01L21/31144 , C11D7/32 , C11D11/0047 , H01L21/31138 , H01L21/76807
摘要： It is disclosed a cleaning liquid used in a process for forming a dual damascene structure comprising steps of etching a low dielectric layer (low-k layer) accumulated on a substrate having thereon a metallic layer to form a first etched-space; charging a sacrifice layer in the first etched-space; partially etching the low dielectric layer and the sacrifice layer to form a second etched-space connected to the first etched-space; and removing the sacrifice layer remaining in the first etched-space with the cleaning liquid, wherein the cleaning liquid comprises (a) 1-25 mass % of a quaternary ammonium hydroxide, such as TMAH and choline (b) 30-70 mass % of a water soluble organic solvent, and (c) 20-60 mass % of water. The cleaning liquid attains in a well balanced manner such effects that a sacrifice layer used for forming a dual damascene structure is excellently removed, and a low dielectric layer is not damaged upon formation of a metallic wiring on a substrate having a metallic layer (such as a Cu layer) and the low dielectric layer formed thereon.
摘要翻译：公开了一种用于形成双镶嵌结构的方法中使用的清洗液，包括以下步骤：蚀刻积聚在其上具有金属层的基底上的低介电层（低k层），以形成第一蚀刻空间; 在第一蚀刻空间中填充牺牲层; 部分地蚀刻低介电层和牺牲层以形成连接到第一蚀刻空间的第二蚀刻空间; 并用清洗液除去残留在第一蚀刻空间中的牺牲层，其中清洗液包含（a）1-25质量％的季铵氢氧化物，如TMAH和胆碱（b），30-70质量％水溶性有机溶剂，（c）20〜60质量％的水。清洗液以良好平衡的方式达到这样的效果，即用于形成双镶嵌结构的牺牲层被极好地去除，并且在具有金属层的基底上形成金属布线时，低介电层不被损坏（例如 Cu层）和形成在其上的低电介质层。

9. 发明申请

US20100056411A1 Treating liquid for photoresist removal and method for treating substrate 审中-公开
标题翻译：处理液体进行光刻胶去除及处理底物的方法
公开(公告)号：US20100056411A1
公开(公告)日：2010-03-04
申请号：US12591048
申请日：2009-11-05
申请人： Takayuki Haraguchi , Kazumasa Wakiya , Shigeru Yokoi
发明人： Takayuki Haraguchi , Kazumasa Wakiya , Shigeru Yokoi
IPC分类号： G03F7/42
CPC分类号： H01L21/31133 , G03F7/423
摘要： Disclosed are a treating liquid for photoresist removal, containing (a) an oxidizing agent (e.g., aqueous hydrogen peroxide), (b) at least one selected from alkylene carbonates and their derivatives (e.g., propylene carbonate), and (c) water; and a method for treating with the treating liquid a substrate having a photoresist film deteriorated after dry-etching treatment thereof or a substrate optionally subjected to plasma-ashing treatment after the dry-etching treatment, and then treating it with a photoresist-stripping liquid for stripping off the photoresist.
摘要翻译：公开了一种用于光致抗蚀剂去除的处理液，其包含（a）氧化剂（例如过氧化氢水溶液），（b）选自碳酸亚烷基酯及其衍生物（例如碳酸亚丙酯）中的至少一种，和（c）水; 以及在干法蚀刻处理之后，处理液处理具有光刻胶膜劣化的基板或在干法蚀刻处理后任选进行等离子体灰化处理的基板的处理液的方法，然后用光致抗蚀剂剥离液剥离光致抗蚀剂。

10. 发明申请

US20080242575A1 Treating liquid for photoresist removal, and method for treating substrate 审中-公开
标题翻译：处理用于光刻胶去除的液体，以及处理底物的方法
公开(公告)号：US20080242575A1
公开(公告)日：2008-10-02
申请号：US12155386
申请日：2008-06-03
申请人： Takayuki Haraguchi , Kazumasa Wakiya , Shigeru Yokoi
发明人： Takayuki Haraguchi , Kazumasa Wakiya , Shigeru Yokoi
IPC分类号： G03F7/42
CPC分类号： H01L21/31133 , G03F7/423
摘要： Disclosed are a treating liquid for photoresist removal, containing (a) an oxidizing agent (e.g., aqueous hydrogen peroxide), (b) at least one selected from alkylene carbonates and their derivatives (e.g., propylene carbonate), and (c) water; and a method for treating with the treating liquid a substrate having a photoresist film deteriorated after dry-etching treatment thereof or a substrate optionally subjected to plasma-ashing treatment after the dry-etching treatment, and then treating it with a photoresist-stripping liquid for stripping off the photoresist.
摘要翻译：公开了一种用于光致抗蚀剂去除的处理液，其包含（a）氧化剂（例如过氧化氢水溶液），（b）选自碳酸亚烷基酯及其衍生物（例如碳酸亚丙酯）中的至少一种，和（c）水; 以及在干法蚀刻处理之后，处理液处理具有光刻胶膜劣化的基板或在干法蚀刻处理后任选进行等离子体灰化处理的基板的处理液的方法，然后用光致抗蚀剂剥离液剥离光致抗蚀剂。

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