专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100035177A1 METHOD FOR FORMING PATTERN, AND MATERIAL FOR FORMING COATING FILM 有权
标题翻译：形成图案的方法和形成涂膜的材料
公开(公告)号：US20100035177A1
公开(公告)日：2010-02-11
申请号：US12443118
申请日：2007-09-13
申请人： Kiyoshi Ishikawa , Jun Koshiyama , Kazumasa Wakiya
发明人： Kiyoshi Ishikawa , Jun Koshiyama , Kazumasa Wakiya
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/40 , H01L21/0337 , H01L21/0338 , Y10S430/128
摘要： A novel method for forming a pattern capable of decreasing the number of steps in a double patterning process, and a material for forming a coating film suitably used in the method for forming a pattern are provided. First resist film (2) is formed by applying a first chemically amplified resist composition on support (1), and thus formed film is selectively exposed, and developed to form multiple first resist patterns (3). Next, on the surface of the first resist patterns (3) are formed multiple coating patterns (5) by forming coating films (4) constituted with a water soluble resin film, respectively. Furthermore, a second chemically amplified resist composition is applied on the support (1) having the coating pattern (5) formed thereon to form second resist film (6), which is selectively exposed and developed to form multiple second resist patterns (7). Accordingly, a pattern including the coating patterns (5) and the second resist patterns (7) is formed on the support (1).
摘要翻译：提供一种用于形成能够减少双重图案化工艺中的台阶数的图案的新颖方法和用于形成图案的方法中适当使用的涂膜形成材料。通过在支撑体（1）上涂覆第一化学放大抗蚀剂组合物形成第一抗蚀剂膜（2），从而形成膜被选择性地曝光并显影以形成多个第一抗蚀剂图案（3）。接下来，通过分别形成由水溶性树脂膜构成的涂膜（4），在第一抗蚀剂图案（3）的表面上形成多个涂布图案（5）。此外，在其上形成有涂层图案（5）的支撑体（1）上施加第二化学放大抗蚀剂组合物以形成第二抗蚀剂膜（6），其被选择性地暴露和显影以形成多个第二抗蚀剂图案（7）。因此，在支撑体（1）上形成包括涂布图案（5）和第二抗蚀图案（7）的图案。

2. 发明授权

US08124312B2 Method for forming pattern, and material for forming coating film 有权
标题翻译：形成图案的方法和用于形成涂膜的材料
公开(公告)号：US08124312B2
公开(公告)日：2012-02-28
申请号：US12443118
申请日：2007-09-13
申请人： Kiyoshi Ishikawa , Jun Koshiyama , Kazumasa Wakiya
发明人： Kiyoshi Ishikawa , Jun Koshiyama , Kazumasa Wakiya
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20 , G03F7/26
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/40 , H01L21/0337 , H01L21/0338 , Y10S430/128
摘要： A novel method for forming a pattern capable of decreasing the number of steps in a double patterning process, and a material for forming a coating film suitably used in the method for forming a pattern are provided. First resist film (2) is formed by applying a first chemically amplified resist composition on support (1), and thus formed film is selectively exposed, and developed to form multiple first resist patterns (3). Next, on the surface of the first resist patterns (3) are formed multiple coating patterns (5) by forming coating films (4) constituted with a water soluble resin film, respectively. Furthermore, a second chemically amplified resist composition is applied on the support (1) having the coating pattern (5) formed thereon to form second resist film (6), which is selectively exposed and developed to form multiple second resist patterns (7). Accordingly, a pattern including the coating patterns (5) and the second resist patterns (7) is formed on the support (1).
摘要翻译：提供一种用于形成能够减少双重图案化工艺中的台阶数的图案的新颖方法和用于形成图案的方法中适当使用的涂膜形成材料。通过在支撑体（1）上涂覆第一化学放大抗蚀剂组合物形成第一抗蚀剂膜（2），从而形成膜被选择性地曝光并显影以形成多个第一抗蚀剂图案（3）。接下来，通过分别形成由水溶性树脂膜构成的涂膜（4），在第一抗蚀剂图案（3）的表面上形成多个涂布图案（5）。此外，在其上形成有涂层图案（5）的支撑体（1）上施加第二化学放大抗蚀剂组合物以形成第二抗蚀剂膜（6），其被选择性地暴露和显影以形成多个第二抗蚀剂图案（7）。因此，在支撑体（1）上形成包括涂布图案（5）和第二抗蚀图案（7）的图案。

3. 发明申请

US20100255429A1 FINE PATTERN FORMING METHOD AND COAT FILM FORMING MATERIAL 审中-公开
标题翻译：精细图案形成方法和涂膜成型材料
公开(公告)号：US20100255429A1
公开(公告)日：2010-10-07
申请号：US12671805
申请日：2008-07-03
申请人： Kiyoshi Ishikawa , Jun Koshiyama , Kazumasa Wakiya
发明人： Kiyoshi Ishikawa , Jun Koshiyama , Kazumasa Wakiya
IPC分类号： G03F7/20
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/40
摘要： Provided are a fine pattern forming method for forming a fine resin pattern having an excellent shape on a supporting body, and a coat film forming material used in the fine pattern forming method. A photosensitive resin composition is applied on the supporting body, selectively exposed and developed to form a first resin pattern. On the surface of the first resin pattern, a coat film composed of a water-soluble resin film is formed to form a coat pattern, then, on the supporting body whereupon the coat pattern is formed, a resin composition containing a photo-acid generating agent is applied, and the entire surface is exposed. Then, the work is cleaned by a solvent, and a second resin pattern wherein a resin film is formed on the surface of the coat pattern is formed. The coat film is formed by using the coat film forming material composed of an aqueous solution containing a water soluble resin and a water soluble cross-linking agent.
摘要翻译：提供一种用于在支撑体上形成具有优异形状的精细树脂图案的精细图案形成方法以及用于精细图案形成方法的涂膜形成材料。将感光性树脂组合物涂布在支撑体上，选择性地曝光和显影以形成第一树脂图案。在第一树脂图案的表面上，形成由水溶性树脂膜构成的涂膜以形成涂层图案，然后在形成涂层图案的支撑体上形成含有产生光酸的树脂组合物涂料，整个表面露出。然后，通过溶剂清洗工件，并且形成在涂层图案的表面上形成树脂膜的第二树脂图案。通过使用由含有水溶性树脂和水溶性交联剂的水溶液构成的涂膜形成材料形成涂膜。

4. 发明授权

US09244358B2 Surface treatment liquid, surface treatment method, hydrophobilization method, and hydrophobilized substrate 有权
标题翻译：表面处理液，表面处理方法，疏水化方法和疏水化底物
公开(公告)号：US09244358B2
公开(公告)日：2016-01-26
申请号：US13123341
申请日：2009-09-15
申请人： Jun Koshiyama , Kazumasa Wakiya
发明人： Jun Koshiyama , Kazumasa Wakiya
IPC分类号： C09K3/18 , G03F7/40 , H01L23/29 , G03F7/16 , H01L21/306 , G03F7/20
CPC分类号： G03F7/405 , C09K3/18 , G03F7/16 , G03F7/2041 , H01L21/306 , H01L23/296 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a surface treatment liquid which enables simple and efficient hydrophobilization of a substrate and prevention of collapse of a resin pattern or etched pattern. Also disclosed are a surface treatment method using the surface treatment liquid, a hydrophobilization method using the surface treatment liquid, and a hydrophobilized substrate. When a substrate is hydrophobilized, the substrate is coated with a surface treatment liquid containing a silylating agent and a hydrocarbon non-polar solvent. When a pattern is prevented from collapse, the surface of a resin pattern formed on a substrate or etched pattern formed on a substrate by etching is treated using a surface treatment liquid containing a silylating agent and a solvent.
摘要翻译：公开了一种表面处理液体，其能够简单且有效地对基材进行疏水化，并防止树脂图案或蚀刻图案的塌陷。还公开了使用表面处理液的表面处理方法，使用表面处理液的疏水化方法和疏水化基材。当底物被疏水化时，用含有甲硅烷基化剂和烃类非极性溶剂的表面处理液涂覆基材。当防止图案塌陷时，通过使用含有甲硅烷基化剂和溶剂的表面处理液对通过蚀刻形成在基板上形成的树脂图案的表面或蚀刻图案进行处理。

5. 发明授权

US08367312B2 Detergent for lithography and method of forming resist pattern with the same 失效
标题翻译：光刻用洗涤剂及其形成抗蚀剂图案的方法
公开(公告)号：US08367312B2
公开(公告)日：2013-02-05
申请号：US12087545
申请日：2006-12-08
申请人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Hidekazu Tajima , Atsushi Miyamoto , Tomoya Kumagai , Atsushi Sawano
发明人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Hidekazu Tajima , Atsushi Miyamoto , Tomoya Kumagai , Atsushi Sawano
IPC分类号： C11D7/32 , C11D1/75
CPC分类号： G03F7/322
摘要： Conventional detergents for lithography which contain a surfactant as an active ingredient should have a reduced surfactant concentration because heightened surfactant concentrations result in dissolution of the resin component of a photoresist composition and hence in a dimensional change of a resist pattern. However, the conventional detergents have had a drawback that such a low concentration unavoidably reduces the ability to inhibit pattern falling and defect occurrence. A detergent for lithography is provided which is an aqueous solution containing (A) at least one member selected among nitrogenous cationic surfactants and nitrogenous ampholytic surfactants and (B) an anionic surfactant. This detergent retains a low surface tension even when it has a low concentration. It is effective in inhibiting pattern falling and defect occurrence. It can also inhibit resist patterns from fluctuating in dimension.
摘要翻译：含有表面活性剂作为活性成分的常规的光刻用洗涤剂应具有降低的表面活性剂浓度，因为增加的表面活性剂浓度导致光致抗蚀剂组合物的树脂组分的溶解，并因此导致抗蚀剂图案的尺寸变化。然而，常规洗涤剂具有这样的缺点：这种低浓度不可避免地降低了抑制图案下落和缺陷发生的能力。提供了一种用于光刻的洗涤剂，其是含有（A）至少一种选自含氮阳离子表面活性剂和含氮两性表面活性剂中的成分的水溶液和（B）阴离子表面活性剂。这种洗涤剂即使在低浓度时也保持低的表面张力。有效抑制图形下降和缺陷发生。它也可以抑制抗蚀剂图案的波动。

6. 发明申请

US20080096141A1 Cleaning Liquid For Lithography And Method For Resist Pattern Formation 有权
标题翻译：用于平版印刷的清洁液和抗蚀剂图案形成方法
公开(公告)号：US20080096141A1
公开(公告)日：2008-04-24
申请号：US11791723
申请日：2005-11-29
申请人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Atsushi Miyamoto , Hidekazu Tajima
发明人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Atsushi Miyamoto , Hidekazu Tajima
IPC分类号： G03C5/56 , G03C11/00
CPC分类号： G03F7/40
摘要： This invention provides a novel cleaning liquid for lithography that, for a photoresist pattern, is used for reducing a surface defect, that is, defect, of a product, preventing pattern collapse during water rinsing, and further imparting electron beam irradiation resistance to a resist to suppress pattern shrinkage. Further, in the novel cleaning liquid for lithography, bacteria contamination does not occur during storage. The cleaning liquid for lithography comprises an aqueous solution containing an amine oxide compound represented by general formula wherein R1 represents an alkyl or hydroxyalkyl group having 8 to 20 carbon atoms which may be interrupted by an oxygen atom; and R2 and R3 represent an alkyl or hydroxyalkyl group having 1 to 5 carbon atoms.
摘要翻译：本发明提供了一种用于光刻的新型清洁液，其用于光致抗蚀剂图案，用于减少产品的表面缺陷，即产品的缺陷，防止水洗过程中的图案塌陷，并进一步赋予抗蚀剂电子束照射抗力抑制图案收缩。此外，在用于光刻的新型清洁液中，在储存期间不会发生细菌污染。用于光刻的清洁液包含含有由通式表示的氧化胺化合物的水溶液，其中R 1表示可被氧原子中断的具有8至20个碳原子的烷基或羟烷基; R 2和R 3代表具有1至5个碳原子的烷基或羟烷基。

7. 发明授权

US07795197B2 Cleaning liquid for lithography and method for resist pattern formation 有权
标题翻译：光刻用清洗液及抗蚀剂图案形成方法
公开(公告)号：US07795197B2
公开(公告)日：2010-09-14
申请号：US11791723
申请日：2005-11-29
申请人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Atsushi Miyamoto , Hidekazu Tajima
发明人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Atsushi Miyamoto , Hidekazu Tajima
IPC分类号： C11D1/75
CPC分类号： G03F7/40
摘要： This invention provides a novel cleaning liquid for lithography that, for a photoresist pattern, is used for reducing a surface defect, that is, defect, of a product, preventing pattern collapse during water rinsing, and further imparting electron beam irradiation resistance to a resist to suppress pattern shrinkage. Further, in the novel cleaning liquid for lithography, bacteria contamination does not occur during storage. The cleaning liquid for lithography comprises an aqueous solution containing an amine oxide compound represented by general formula wherein R1 represents an alkyl or hydroxyalkyl group having 8 to 20 carbon atoms which may be interrupted by an oxygen atom; and R2 and R3 represent an alkyl or hydroxyalkyl group having 1 to 5 carbon atoms.
摘要翻译：本发明提供了一种用于光刻的新型清洁液，其用于光致抗蚀剂图案，用于减少产品的表面缺陷，即产品的缺陷，防止水洗过程中的图案塌陷，并进一步赋予抗蚀剂电子束照射抗力抑制图案收缩。此外，在用于光刻的新型清洁液中，在储存期间不会发生细菌污染。用于光刻的清洁液包含含有由通式表示的氧化胺化合物的水溶液，其中R 1表示可被氧原子中断的具有8-20个碳原子的烷基或羟烷基; R2和R3表示碳原子数1〜5的烷基或羟烷基。

8. 发明授权

US07741260B2 Rinsing fluid for lithography 失效
标题翻译：用于光刻的冲洗液
公开(公告)号：US07741260B2
公开(公告)日：2010-06-22
申请号：US11587268
申请日：2005-04-20
申请人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
发明人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
IPC分类号： C11D7/32
CPC分类号： G03F7/32 , C11D3/245 , C11D3/349 , C11D11/0041 , G03F7/322
摘要： The invention provides a novel rinsing fluid which can convert an easily wettable resist pattern surface having a contact angle of 40° or below into one having a contact angle of 70° or above to inhibit pattern collapse effectively and thereby give high-quality products. The rinsing fluid consists of a solution containing at least one fluorine compound soluble in water or alcoholic solvents which is selected from among compounds represented by the general formula (I), those represented by the general formula (II), and those represented by the general formula: Rf′—COOH: wherein R1 and R2 are each optionally substituted C1-5 alkyl whose hydrogen atoms are partially or wholly replaced by fluorine, or R1 and R2 together with the SO2 groups to which they are bonded and the nitrogen atom may form a five- or six-membered ring; Rf is optionally substituted C1-5 alkyl whose hydrogen atoms are partially or wholly replaced by fluorine; m and n are each an integer of 2 or 3; and Rf′ is at least partially fluorinated alkyl having 8 to 20 carbon atoms.
摘要翻译：本发明提供了一种新颖的冲洗液，其可以将具有40°或更低接触角的容易润湿的抗蚀剂图案表面转变成接触角为70°或更高的接触角，以有效抑制图案塌陷，从而产生高质量的产品。冲洗液由含有至少一种可溶于水的氟化合物或醇溶剂的溶液组成，所述氟化合物选自由通式（I）表示的化合物，由通式（II）表示的化合物和由通式式：Rf'-COOH：其中R 1和R 2各自是氢或被氟部分或全部取代的任选取代的C 1-5烷基，或者R 1和R 2与它们所键合的SO 2基团和氮原子可形成五元或六元环; Rf是任选取代的C 1-5烷基，其氢原子部分或全部被氟取代; m和n分别为2或3的整数; Rf'为至少部分氟化的碳原子数为8〜20的烷基。

9. 发明申请

US20060128581A1 Lithographic rinse solution and method for forming patterned resist layer using the same 有权
标题翻译：平版印刷冲洗液及其形成图案化抗蚀剂层的方法
公开(公告)号：US20060128581A1
公开(公告)日：2006-06-15
申请号：US11296343
申请日：2005-12-08
申请人： Yoshihiro Sawada , Jun Koshiyama , Kazumasa Wakiya , Atsushi Miyamoto , Hidekazu Tajima
发明人： Yoshihiro Sawada , Jun Koshiyama , Kazumasa Wakiya , Atsushi Miyamoto , Hidekazu Tajima
IPC分类号： C11D9/00
CPC分类号： C11D7/3281 , C11D11/0047
摘要： The invention provides a novel rinse solution used in the step of rinse treatment of a patterned photoresist layer developed with an aqueous alkaline developer solution in a photolithographic process for the manufacture of semiconductor devices and liquid crystal display panels. The rinse solution provided by the invention is an aqueous solution of a nitrogen-containing heterocyclic compound such as imidazoline, pyridine and the like in a concentration up to 10% by mass. Optionally, the rinse solution of the invention further contains a water-miscible alcoholic or glycolic organic solvent and/or a water-soluble resin. The invention also provides a lithographic method for the formation of a patterned photoresist layer including a step of rinse treatment of an alkali-developed resist layer with the rinse solution defined above. The invention provides an improvement on the lithographic process in respect of the product quality and efficiency of the process.
摘要翻译：本发明提供了一种用于在用于制造半导体器件和液晶显示面板的光刻工艺中用碱性显影剂水溶液显影的图案化光刻胶层的漂洗处理步骤中使用的新型冲洗溶液。本发明提供的冲洗溶液为浓度高达10质量％的含氮杂环化合物如咪唑啉，吡啶等的水溶液。任选地，本发明的冲洗溶液还含有水混溶性醇或乙醇酸有机溶剂和/或水溶性树脂。本发明还提供了一种用于形成图案化光致抗蚀剂层的光刻方法，包括用上述定义的冲洗溶液冲洗处理碱显影抗蚀剂层的步骤。本发明提供了关于产品质量和工艺效率的光刻工艺的改进。

10. 发明授权

US07897325B2 Lithographic rinse solution and method for forming patterned resist layer using the same 有权
标题翻译：平版印刷冲洗液及其形成图案化抗蚀剂层的方法
公开(公告)号：US07897325B2
公开(公告)日：2011-03-01
申请号：US11296343
申请日：2005-12-08
申请人： Yoshihiro Sawada , Jun Koshiyama , Kazumasa Wakiya , Atsushi Miyamoto , Hidekazu Tajima
发明人： Yoshihiro Sawada , Jun Koshiyama , Kazumasa Wakiya , Atsushi Miyamoto , Hidekazu Tajima
IPC分类号： G03F7/26 , G03F7/40 , C11D7/04
CPC分类号： C11D7/3281 , C11D11/0047
摘要： The invention provides a novel rinse solution used in the step of rinse treatment of a patterned photoresist layer developed with an aqueous alkaline developer solution in a photolithographic process for the manufacture of semiconductor devices and liquid crystal display panels. The rinse solution provided by the invention is an aqueous solution of a nitrogen-containing heterocyclic compound such as imidazoline, pyridine and the like in a concentration up to 10% by mass. Optionally, the rinse solution of the invention further contains a water-miscible alcoholic or glycolic organic solvent and/or a water-soluble resin. The invention also provides a lithographic method for the formation of a patterned photoresist layer including a step of rinse treatment of an alkali-developed resist layer with the rinse solution defined above. The invention provides an improvement on the lithographic process in respect of the product quality and efficiency of the process.
摘要翻译：本发明提供了一种用于在用于制造半导体器件和液晶显示面板的光刻工艺中用碱性显影剂水溶液显影的图案化光刻胶层的漂洗处理步骤中使用的新型冲洗溶液。本发明提供的冲洗溶液为浓度高达10质量％的含氮杂环化合物如咪唑啉，吡啶等的水溶液。任选地，本发明的冲洗溶液还含有水混溶性醇或乙醇酸有机溶剂和/或水溶性树脂。本发明还提供了一种用于形成图案化光致抗蚀剂层的光刻方法，包括用上述定义的冲洗溶液冲洗处理碱显影抗蚀剂层的步骤。本发明提供了关于产品质量和工艺效率的光刻工艺的改进。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式