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1. 发明申请

US20110065053A1 MATERIAL FOR FORMING PROTECTIVE FILM AND METHOD FOR FORMING PHOTORESIST PATTERN 审中-公开
标题翻译：形成保护膜的材料和形成光电子图案的方法
公开(公告)号：US20110065053A1
公开(公告)日：2011-03-17
申请号：US12879809
申请日：2010-09-10
申请人： Masaaki YOSHIDA , Kiyoshi ISHIKAWA , Atsushi SAWANO , Yuriko SHIRAI , Takumi NAMIKI
发明人： Masaaki YOSHIDA , Kiyoshi ISHIKAWA , Atsushi SAWANO , Yuriko SHIRAI , Takumi NAMIKI
IPC分类号： G03F7/20 , C08F32/08 , C08L55/00
CPC分类号： G03F7/2041 , C08F232/08 , G03F7/0046 , G03F7/11
摘要： The present invention provides a material for forming a protective film that has favorable alkali solubility and gives a protective film excelling in water repellency, as well as a method for forming a photoresist pattern using this material for forming a protective film. The material for forming a protective film of the present invention contains an alkali-soluble polymer having a unit derived from a monomer represented by the following general formula (A-1) as a constitutional unit. In the general formula (A-1), R1 is a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or the like; R2, R3, and R4 are each independently an alkylene chain having 1 to 6 carbon atoms or the like; R5 and R6 are each independently an alkyl group or fluoroalkyl group having 1 to 15 carbon atoms or the like; and at least one of R5 and R6 is a fluoroalkyl group; Z is an alkylene chain having 1 to 2 carbon atoms or an oxygen atom; m is 0 or 1; and n is an integer of 0 to 3.
摘要翻译：本发明提供一种形成保护膜的材料，该保护膜具有良好的碱溶性，并提供防水性优异的保护膜，以及使用该材料形成保护膜形成光刻胶图案的方法。用于形成本发明的保护膜的材料含有具有由下述通式（A-1）表示的单体衍生的单元作为结构单元的碱溶性聚合物。在通式（A-1）中，R 1为氢原子，碳原子数1〜6的烷基等; R 2，R 3和R 4各自独立地为具有1〜6个碳原子的亚烷基链等; R 5和R 6各自独立地为具有1〜15个碳原子的烷基或氟代烷基等; 并且R 5和R 6中的至少一个是氟代烷基; Z是具有1至2个碳原子或氧原子的亚烷基链; m为0或1; n为0〜3的整数。

2. 发明申请

US20090004608A1 Detergent For Lithography And Method Of Forming Resist Pattern With The Same 失效
标题翻译：用于光刻的洗涤剂及其形成抗蚀剂图案的方法
公开(公告)号：US20090004608A1
公开(公告)日：2009-01-01
申请号：US12087545
申请日：2006-12-08
申请人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Hidekazu Tajima , Atsushi Miyamoto , Tomoya Kumagai , Atsushi Sawano
发明人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Hidekazu Tajima , Atsushi Miyamoto , Tomoya Kumagai , Atsushi Sawano
IPC分类号： G03F7/20 , C11D7/32
CPC分类号： G03F7/322
摘要： Conventional detergents for lithography which contain a surfactant as an active ingredient should have a reduced surfactant concentration because heightened surfactant concentrations result in dissolution of the resin component of a photoresist composition and hence in a dimensional change of a resist pattern. However, the conventional detergents have had a drawback that such a low concentration unavoidably reduces the ability to inhibit pattern falling and defect occurrence. A detergent for lithography is provided which is an aqueous solution containing (A) at least one member selected among nitrogenous cationic surfactants and nitrogenous ampholytic surfactants and (B) an anionic surfactant. This detergent retains a low surface tension even when it has a low concentration. It is effective in inhibiting pattern falling and defect occurrence. It can also inhibit resist patterns from fluctuating in dimension.
摘要翻译：含有表面活性剂作为活性成分的常规的光刻用洗涤剂应具有降低的表面活性剂浓度，因为增加的表面活性剂浓度导致光致抗蚀剂组合物的树脂组分的溶解，并因此导致抗蚀剂图案的尺寸变化。然而，常规洗涤剂具有这样的缺点：这种低浓度不可避免地降低了抑制图案下落和缺陷发生的能力。提供了一种用于光刻的洗涤剂，其是含有（A）至少一种选自含氮阳离子表面活性剂和含氮两性表面活性剂中的成分的水溶液和（B）阴离子表面活性剂。这种洗涤剂即使在低浓度时也保持低的表面张力。有效抑制图形下降和缺陷发生。它也可以抑制抗蚀剂图案的波动。

3. 发明授权

US06517993B2 Copolymer, photoresist composition, and process for forming resist pattern with high aspect ratio 失效
标题翻译：共聚物，光致抗蚀剂组合物和用于形成具有高纵横比的抗蚀剂图案的工艺
公开(公告)号：US06517993B2
公开(公告)日：2003-02-11
申请号：US09901646
申请日：2001-07-11
申请人： Tsuyoshi Nakamura , Taeko Ikegawa , Atsushi Sawano , Kousuke Doi , Hidekatsu Kohara
发明人： Tsuyoshi Nakamura , Taeko Ikegawa , Atsushi Sawano , Kousuke Doi , Hidekatsu Kohara
IPC分类号： G03F7004
CPC分类号： G03F7/0397 , G03F7/0382 , G03F7/0758 , G03F7/405 , Y10S430/111
摘要： A novel copolymer includes a repeating unit (A) represented by, for example, Formula (I) below, and a repeating unit (B) derived from an unsaturated carboxylic anhydride. The novel copolymer is suitable for the preparation of a photoresist composition that has satisfactory transparency, high sensitivity and definition and exhibits satisfactory DOF properties in the field of photolithography using a deep UV light source. By the use of the photoresist composition, a process forms a resist pattern with a high aspect ratio.
摘要翻译：新型共聚物包括由例如下式（I）表示的重复单元（A）和由不饱和羧酸酐衍生的重复单元（B）。新型共聚物适用于具有令人满意的透明度，高灵敏度和清晰度的光致抗蚀剂组合物的制备，并且在使用深UV光源的光刻领域中表现出令人满意的DOF特性。通过使用光致抗蚀剂组合物，工艺形成具有高纵横比的抗蚀剂图案。

4. 发明授权

US6083657A Positive photoresist compositions and a process for producing the same 有权
标题翻译：正型光致抗蚀剂组合物及其制造方法
公开(公告)号：US6083657A
公开(公告)日：2000-07-04
申请号：US231826
申请日：1999-01-15
申请人： Shinichi Kono , Yasuo Masuda , Atsushi Sawano , Hayato Ohno , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Shinichi Kono , Yasuo Masuda , Atsushi Sawano , Hayato Ohno , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： C08G8/08 , C08G8/26 , C08L61/06 , C08L61/14 , G03F7/022 , G03F7/023 , G03F7/30
CPC分类号： G03F7/0236 , C08G8/08 , C08G8/26 , C08L61/06 , C08L61/14 , G03F7/022
摘要： Phenolic compound (a) is polycondensed with mixed aldehyde (b) consisting essentially of 5-30 mol % of unsaturated aliphatic aldehyde (b-1) and 70-95 mol % of saturated aliphatic aldehyde (b-2) to give alkali-soluble novolak resin (A) as the product of polycondensation reaction. The alkali-soluble novolak resin (A) is used with quinonediazido group containing compound (B) to produce a positive photoresist composition. According to the present invention, there are specifically provided a positive photoresist composition that has high feature integrity in spite of high sensitivity and which yet provides a great depth of focus, a process for producing such positive photoresist composition, as well as an alkali-soluble novolak resin that can advantageously be used in such composition, and a method of forming patterns with high reproducibility using such positive photoresist composition.
摘要翻译：酚醛化合物（a）与基本上由5-30mol％不饱和脂族醛（b-1）和70-95mol％饱和脂族醛（b-2）组成的混合醛（b）缩聚，得到碱溶性酚醛清漆树脂（A）作为缩聚反应的产物。与含醌二叠氮基的化合物（B）一起使用碱溶性酚醛清漆树脂（A）以产生正型光致抗蚀剂组合物。根据本发明，具体地提供了一种正光致抗蚀剂组合物，尽管具有高灵敏度并且仍然提供了很大的聚焦深度，但具有高特征完整性，制备这种正性光致抗蚀剂组合物的方法以及碱溶性可以有利地用于这种组合物中的酚醛清漆树脂，以及使用这种正性光致抗蚀剂组合物形成具有高再现性的图案的方法。

5. 发明授权

US5576138A Positive-working naphtho quinone diazide sulfonic acid ester photoresist composition containing select combination of additives 失效
标题翻译：正性萘醌醌二叠氮磺酸酯光致抗蚀剂组合物含有选择性组合的添加剂
公开(公告)号：US5576138A
公开(公告)日：1996-11-19
申请号：US423722
申请日：1995-04-18
申请人： Yoshito Ando , Atsushi Sawano , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Yoshito Ando , Atsushi Sawano , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/022 , G03F7/09 , H01L21/027 , G03F7/023
CPC分类号： G03F7/0226 , G03F7/091
摘要： Disclosed is a positive-working photoresist composition used in the photolithographic patterning work for the manufacture of various electronic devices such as VLSIs having improved characteristics, in particular, in respect of the halation-preventing effect. In addition to the conventional ingredients of (a) an alkali-soluble novolac resin as a film-forming agent and (b) a naphthoquinonediazide group-containing compound as a photosensitizing agent, the composition is formulated by the admixture of a specific amount of (c) a halation-preventing agent which is a combination of, one, (c1) a 4,4'-bis(dialkylamino) benzophenone compound and, the other, (c2) a compound selected from the group consisting of polyhydroxy benzophenone compounds, amino- and hydroxy-containing benzophenone compounds and 4-pyrazolylazo compounds in a specific weight proportion of (c1):(c2).
摘要翻译：公开了用于制造具有改进特性的各种电子器件如VLSI的光刻图形工作中的正性光致抗蚀剂组合物，特别是关于防止晕影效果。除了（a）作为成膜剂的碱溶性酚醛清漆树脂和（b）含有萘醌二叠氮化物基的化合物作为感光剂的常规成分之外，还通过混合特定量的（ c）一种防晕剂，其是一种（c1）4,4'-双（二烷基氨基）二苯甲酮化合物的组合，另一种是（c2）选自多羟基二苯甲酮化合物，氨基和羟基的二苯甲酮化合物和4-吡唑基偶氮化合物，其特定重量比例为（c1）:( c2）。

6. 发明授权

US08367312B2 Detergent for lithography and method of forming resist pattern with the same 失效
标题翻译：光刻用洗涤剂及其形成抗蚀剂图案的方法
公开(公告)号：US08367312B2
公开(公告)日：2013-02-05
申请号：US12087545
申请日：2006-12-08
申请人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Hidekazu Tajima , Atsushi Miyamoto , Tomoya Kumagai , Atsushi Sawano
发明人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Hidekazu Tajima , Atsushi Miyamoto , Tomoya Kumagai , Atsushi Sawano
IPC分类号： C11D7/32 , C11D1/75
CPC分类号： G03F7/322
摘要： Conventional detergents for lithography which contain a surfactant as an active ingredient should have a reduced surfactant concentration because heightened surfactant concentrations result in dissolution of the resin component of a photoresist composition and hence in a dimensional change of a resist pattern. However, the conventional detergents have had a drawback that such a low concentration unavoidably reduces the ability to inhibit pattern falling and defect occurrence. A detergent for lithography is provided which is an aqueous solution containing (A) at least one member selected among nitrogenous cationic surfactants and nitrogenous ampholytic surfactants and (B) an anionic surfactant. This detergent retains a low surface tension even when it has a low concentration. It is effective in inhibiting pattern falling and defect occurrence. It can also inhibit resist patterns from fluctuating in dimension.
摘要翻译：含有表面活性剂作为活性成分的常规的光刻用洗涤剂应具有降低的表面活性剂浓度，因为增加的表面活性剂浓度导致光致抗蚀剂组合物的树脂组分的溶解，并因此导致抗蚀剂图案的尺寸变化。然而，常规洗涤剂具有这样的缺点：这种低浓度不可避免地降低了抑制图案下落和缺陷发生的能力。提供了一种用于光刻的洗涤剂，其是含有（A）至少一种选自含氮阳离子表面活性剂和含氮两性表面活性剂中的成分的水溶液和（B）阴离子表面活性剂。这种洗涤剂即使在低浓度时也保持低的表面张力。有效抑制图形下降和缺陷发生。它也可以抑制抗蚀剂图案的波动。

7. 发明授权

US08323745B2 Application liquid and method for formation of a silica-based coating film using the application liquid 有权
标题翻译：应用液体和使用该涂布液形成二氧化硅基涂膜的方法
公开(公告)号：US08323745B2
公开(公告)日：2012-12-04
申请号：US12748146
申请日：2010-03-26
申请人： Tokonori Yamadaya , Kiyoshi Ishikawa , Atsushi Sawano
发明人： Tokonori Yamadaya , Kiyoshi Ishikawa , Atsushi Sawano
IPC分类号： B05D3/02
CPC分类号： C03C17/25 , C09D183/04 , C08K5/205
摘要： An application liquid capable of forming a dense silica-based coating film even when embedded into a fine groove, and a method for formation of a silica-based coating film using the application liquid are provided. An application liquid is used including (A) a siloxane polymer, and (B) a base generator represented by the following general formula (I): wherein, R1 and R2 are a hydrocarbon group having 1 to 5 carbon atoms and which may be the same or different; or one of R1 and R2 is a hydrogen atom and the other is a hydrocarbon group having 1 to 5 carbon atoms; when R1 and R2 are both a hydrocarbon group, these may bind to one another to form a ring structure; R3 is a linking group; and R4 is a condensed ring.
摘要翻译：提供即使嵌入微细沟槽也能够形成致密二氧化硅系涂膜的涂布液，以及使用该涂布液形成二氧化硅系涂膜的方法。使用包含（A）硅氧烷聚合物和（B）由以下通式（I）表示的碱发生剂的应用液：其中，R 1和R 2是具有1至5个碳原子的烃基，并且可以是相同或不同; R 1和R 2中的一个为氢原子，另一个为碳原子数为1〜5的烃基; 当R1和R2都是烃基时，它们可以彼此结合形成环结构; R3是连接基团; R4是稠环。

8. 发明授权

US08216775B2 Anti-reflection film forming material, and method for forming resist pattern using the same 有权
标题翻译：防反射膜形成材料，以及使用其形成抗蚀剂图案的方法
公开(公告)号：US08216775B2
公开(公告)日：2012-07-10
申请号：US12385195
申请日：2009-04-01
申请人： Yuriko Shirai , Takako Hirosaki , Masahiro Masujima , Atsushi Sawano , Jun Koshiyama
发明人： Yuriko Shirai , Takako Hirosaki , Masahiro Masujima , Atsushi Sawano , Jun Koshiyama
IPC分类号： H01L21/027 , G03F7/11 , G03F7/30
CPC分类号： C09D139/06 , C08K5/17 , C08K5/175 , C08K5/19 , G03F7/091 , Y10S438/952
摘要： The anti-reflection film forming material according to the present invention includes (a) a water soluble resin having a vinyl acetate constituent unit, and (b) a compound having a constituent unit represented by the following general formula. Wherein, R1 and R2 represent a direct bond or a methylene chain; R3 and R4 represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or a group represented by —(CH2)n—O—R5—R6; and at least one of R3 and R4 is a group represented by —(CH2)n—O—R5—R6, wherein: R5 represents a direct bond or an alkylene chain having 1 to 10 carbon atoms which may be interrupted with —O—; R6 represents an alkyl group having 1 to 10 carbon atoms in which a portion or all hydrogen atoms are substituted with a fluorine atom; and n represents an integer of 0 to 10. Wherein, the total number of carbon atoms present in R1 and R2 is 1 or 2.
摘要翻译：根据本发明的抗反射成膜材料包括（a）具有乙酸乙烯酯构成单元的水溶性树脂，和（b）具有由以下通式表示的构成单元的化合物。其中R1和R2表示直接键或亚甲基链; R3和R4表示氢原子，具有1-10个碳原子的烷基或由 - （CH2）n-O-R5-R6表示的基团; 并且R 3和R 4中的至少一个是由 - （CH 2）n -O-R 5 -R 6表示的基团，其中：R 5表示直接键或具有1〜10个碳原子的亚烷基，其可以被-O- ; R6表示一部分或全部氢原子被氟原子取代的碳原子数1〜10的烷基， n表示0〜10的整数。其中R1和R2中存在的碳原子总数为1或2。

9. 发明授权

US08158328B2 Composition for formation of anti-reflection film, and method for formation of resist pattern using the same 有权
标题翻译：用于形成抗反射膜的组合物以及使用其形成抗蚀剂图案的方法
公开(公告)号：US08158328B2
公开(公告)日：2012-04-17
申请号：US12449494
申请日：2008-01-08
申请人： Atsushi Sawano , Jun Koshiyama , Takako Hirosaki
发明人： Atsushi Sawano , Jun Koshiyama , Takako Hirosaki
IPC分类号： G03F7/11 , G03F7/26
CPC分类号： G03F7/091 , G03F7/0046 , G03F7/0048 , H01L21/0276
摘要： A composition for forming an anti-reflection film on a resist film is provided, which is superior in handling characteristics, and is not accompanied by generation of deposits and the like after forming the film. A composition for forming an anti-reflection film to be provided on a resist film is provided, which includes at least a certain fluorochemical surfactant, and a certain water soluble film forming component. The composition for forming an anti-reflection film can be easily handled, has no adverse effect on health or the environment, and also avoids the generation of deposits and the like even after forming an anti-reflection film.
摘要翻译：提供了一种在抗蚀剂膜上形成抗反射膜的组合物，其处理性能优异，并且在形成膜之后不伴随着沉积物等的产生。提供一种用于形成设置在抗蚀剂膜上的抗反射膜的组合物，其至少包含一些含氟表面活性剂和一定的水溶性成膜组分。用于形成抗反射膜的组合物可以容易地处理，对健康或环境没有不利影响，并且即使在形成抗反射膜之后也避免沉积物等的产生。

10. 发明授权

US5728504A Positive photoresist compositions and multilayer resist materials using the same 失效
标题翻译：正型光致抗蚀剂组合物和使用其的多层抗蚀剂材料
公开(公告)号：US5728504A
公开(公告)日：1998-03-17
申请号：US652389
申请日：1996-05-23
申请人： Hiroshi Hosoda , Satoshi Niikura , Atsushi Sawano , Tatsuya Hashiguchi , Kazuyuki Nitta , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Hiroshi Hosoda , Satoshi Niikura , Atsushi Sawano , Tatsuya Hashiguchi , Kazuyuki Nitta , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/11 , G03F7/022 , G03F7/26 , H01L21/027 , G03F7/023
CPC分类号： G03F7/022
摘要： A positive photoresist composition comprising (A) an alkali-soluble resin and (B) a light-sensitive component comprising at least one compound represented by the following general formula (I): ##STR1## where R.sup.1, R.sup.2 and R.sup.3 are each independently a hydrogen atom, an alkyl group having 1-3 carbon atoms or an alkoxy group having 1-3 carbon atoms; R.sup.4 is a hydrogen atom or an alkyl group having 1-3 carbon atoms; a, b and c are an integer of 1-3; l, m and n are an integer of 1-3, in which at least part of the hydroxyl groups present are esterified with a quinonediazidosulfonic acid and a sulfonic acid which has a group represented by the following formula (II): --SO.sub.2 --R.sup.5 (II) where R.sup.5 is a substituted or unsubstituted alkyl group, an alkenyl group or a substituted or unsubstituted aryl group, thereby forming a mixed ester, and a multilayer resist material in which a positive photoresist layer formed of said positive photoresist composition is provided on an anti-reflective coating over a substrate are capable of forming high-resolution resist patterns with good cross-sectional profiles and permit a wider margin of exposure and better depth-of-focus characteristics.
摘要翻译：一种正性光致抗蚀剂组合物，其包含（A）碱溶性树脂和（B）包含至少一种由以下通式（I）表示的化合物的光敏性组分：其中R 1，R 2和R 3是各自独立地为氢原子，具有1-3个碳原子的烷基或具有1-3个碳原子的烷氧基; R4是氢原子或具有1-3个碳原子的烷基; a，b和c为1-3的整数; l，m和n是1-3的整数，其中存在的羟基的至少一部分与醌二叠氮磺酸和具有下式（II）表示的基团的磺酸酯化：-SO 2 -R 5 （II）其中R5是取代或未取代的烷基，烯基或取代或未取代的芳基，从而形成混合酯，以及多层抗蚀剂材料，其中由所述正性光致抗蚀剂组合物形成的正性光致抗蚀剂层设置在衬底上的抗反射涂层能够形成具有良好横截面轮廓的高分辨率抗蚀剂图案，并允许更宽的曝光余量和更好的聚焦深度特性。

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