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1. 外观设计

USD581110S1 Electric vacuum cleaner body 有权
标题翻译：电动吸尘器主体
公开(公告)号：USD581110S1
公开(公告)日：2008-11-18
申请号：US29272018
申请日：2007-01-31
申请人： Kiyoaki Konno , Hisashi Yoshida , Masakazu Umeda , Taro Iike
设计人： Kiyoaki Konno , Hisashi Yoshida , Masakazu Umeda , Taro Iike

2. 外观设计

USD573759S1 Electric vacuum cleaner 有权
标题翻译：电动吸尘器
公开(公告)号：USD573759S1
公开(公告)日：2008-07-22
申请号：US29277479
申请日：2007-02-27
申请人： Kiyoaki Konno , Masakazu Umeda , Hisashi Yoshida , Taro Iike , Morgan Brown
设计人： Kiyoaki Konno , Masakazu Umeda , Hisashi Yoshida , Taro Iike , Morgan Brown

3. 外观设计

USD570567S1 Vacuum cleaner 有权
公开(公告)号：USD570567S1
公开(公告)日：2008-06-03
申请号：US29282882
申请日：2007-07-31
申请人： Masakazu Umeda , Taro Iike , Hisashi Yoshida , Morgan Brown
设计人： Masakazu Umeda , Taro Iike , Hisashi Yoshida , Morgan Brown

4. 外观设计

USD570563S1 Vacuum cleaner 有权
公开(公告)号：USD570563S1
公开(公告)日：2008-06-03
申请号：US29282881
申请日：2007-07-31
申请人： Masakazu Umeda , Taro Iike , Hisashi Yoshida , Morgan Brown
设计人： Masakazu Umeda , Taro Iike , Hisashi Yoshida , Morgan Brown

5. 发明授权

US08598605B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08598605B2
公开(公告)日：2013-12-03
申请号：US13601454
申请日：2012-08-31
申请人： Naoharu Sugiyama , Taisuke Sato , Kotaro Zaima , Jumpei Tajima , Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Shinya Nunoue
发明人： Naoharu Sugiyama , Taisuke Sato , Kotaro Zaima , Jumpei Tajima , Toshiki Hikosaka , Yoshiyuki Harada , Hisashi Yoshida , Shinya Nunoue
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/32 , H01L33/06 , H01L33/12
摘要： According to one embodiment, a semiconductor light-emitting device includes: a first conductivity type first semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in a (0001) surface; a second conductivity type second semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in the (0001) surface; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, containing a nitride semiconductor crystal, and having an average lattice constant larger than the lattice constant of the first semiconductor layer; and a first stress application layer provided on a side opposite to the light emitting layer of the first semiconductor layer and applying a compressive stress to the first semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括：包含氮化物半导体晶体并且在（0001）表面中具有拉伸应力的第一导电类型的第一半导体层; 含有氮化物半导体晶体并在（0001）表面具有拉伸应力的第二导电类型的第二半导体层; 设置在所述第一半导体层和所述第二半导体层之间的包含氮化物半导体晶体并且具有大于所述第一半导体层的晶格常数的平均晶格常数的发光层; 以及第一应力施加层，其设置在与所述第一半导体层的所述发光层相对的一侧上，并向所述第一半导体层施加压缩应力。

6. 发明申请

US20080013339A1 RED FLUORESCENT MATERIAL, WHITE LIGHT EMITTING DIODE USING RED FLUORESCENT MATERIAL, AND LIGHTING DEVICE USING WHITE LIGHT EMITTING DIODE 审中-公开
标题翻译：红色荧光材料，使用红色荧光材料的白光发光二极管和使用白光发光二极管的照明装置
公开(公告)号：US20080013339A1
公开(公告)日：2008-01-17
申请号：US11834103
申请日：2007-08-06
申请人： Ryo Yoshimatsu , Hisashi Yoshida
发明人： Ryo Yoshimatsu , Hisashi Yoshida
IPC分类号： F21V7/04 , C01F17/00 , H01L33/00
CPC分类号： C09K11/7789 , C09K11/7736 , C09K11/7794 , H01L33/502 , H01L33/504 , Y02B20/181
摘要： The present invention achieves improvement of the color reproducibility, color rendering properties and light emitting efficiency of a white light emitting diode. The present invention is a red fluorescent material composed of a europium doped calcium lanthanum tungstate represented by a general formula of Ca3(La1−x,Eux)2W2012 (0
摘要翻译：本发明实现白色发光二极管的色彩再现性，显色性和发光效率的提高。本发明是一种红色荧光材料，由掺杂铕的镧钙镧钨酸盐组成，其由通式为Ca 3（La 1-x x，Eu x x）（0 红色荧光材料可以将紫外发光二极管的350〜410nm的发光波长范围内的光有效地转换成红色的光，可有效地将465nm的蓝色光和538nm的绿色光转换为红色。

7. 发明申请

US20050133805A1 Red fluorescent material, white light emitting diode using red fluorescent material, and lighting system using white light emitting diode 有权
标题翻译：红色荧光材料，使用红色荧光材料的白色发光二极管，以及使用白色发光二极管的照明系统
公开(公告)号：US20050133805A1
公开(公告)日：2005-06-23
申请号：US11013341
申请日：2004-12-17
申请人： Ryo Yoshimatsu , Hisashi Yoshida
发明人： Ryo Yoshimatsu , Hisashi Yoshida
IPC分类号： C09K11/78 , C09K11/08 , C09K11/67 , C09K11/77 , C09K11/80 , G02F1/13 , H01L33/00
CPC分类号： C09K11/7789 , C09K11/7787 , H01L33/502 , H01L33/504 , Y02B20/181
摘要： The present invention achieves improvement of the color reproducibility, color rendering properties and light emitting efficiency of a white light emitting diode. The present invention is a red fluorescent material composed of a europium doped lithium lanthanum niobate represented by a general formula of LiLa1-xEuxNb2O7 (0
摘要翻译：本发明实现白色发光二极管的色彩再现性，显色性和发光效率的提高。本发明是一种红色荧光材料，其由掺杂铕的铌酸镧锂组成，其由通式LiLa 1-x O 2 Nb 2 Nb 2 / （0

8. 发明授权

US09065003B2 Semiconductor light emitting device and semiconductor wafer 有权
标题翻译：半导体发光器件和半导体晶片
公开(公告)号：US09065003B2
公开(公告)日：2015-06-23
申请号：US13405509
申请日：2012-02-27
申请人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
发明人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/06 , H01L33/12 , H01L33/32 , H01L33/02
CPC分类号： H01L33/12 , H01L33/02 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，发出峰值波长为440纳米以上的光。对第一半导体层施加拉伸应变。第一半导体层的边缘位错密度为5×10 9 / cm 2以下。第一半导体层和发光层之间的晶格失配因子为0.11％以下。

9. 发明授权

US08698123B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08698123B2
公开(公告)日：2014-04-15
申请号：US13213373
申请日：2011-08-19
申请人： Tomonari Shioda , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/06 , H01L27/15
CPC分类号： H01L33/06 , H01L33/04 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The n-type semiconductor layer includes a nitride semiconductor. The p-type semiconductor layer includes a nitride semiconductor. The light emitting part is provided between the n-type and the p-type semiconductor layers and includes an n-side barrier layer and a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, and a first AlGaN layer. The first barrier layer is provided between the n-side barrier layer and the p-type semiconductor layer. The first well layer contacts the n-side barrier layer between the n-side and the first barrier layer. The first AlGaN layer is provided between the first well layer and the first barrier layer. A peak wavelength λp of light emitted from the light emitting part is longer than 515 nanometers.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。 n型半导体层包括氮化物半导体。 p型半导体层包括氮化物半导体。发光部分设置在n型和p型半导体层之间，并且包括n侧阻挡层和第一发光层。第一发光层包括第一阻挡层，第一阱层和第一AlGaN层。第一阻挡层设置在n侧势垒层和p型半导体层之间。第一阱层与n侧和第一阻挡层之间的n侧势垒层接触。第一AlGaN层设置在第一阱层和第一势垒层之间。从发光部发出的光的峰值波长λp长于515nm。

10. 发明申请

US20130234151A1 NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR WAFER 有权
标题翻译：氮化物半导体元件和氮化物半导体晶体管
公开(公告)号：US20130234151A1
公开(公告)日：2013-09-12
申请号：US13602868
申请日：2012-09-04
申请人： Toshiki HIKOSAKA , Yoshiyuki Harada , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
发明人： Toshiki HIKOSAKA , Yoshiyuki Harada , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/20
CPC分类号： H01L29/205 , B82Y20/00 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L29/2003 , H01L29/365 , H01L29/7783 , H01L33/06 , H01L33/12 , H01L33/32
摘要： According to one embodiment, a nitride semiconductor element includes a foundation layer, a functional layer and a stacked body. The stacked body is provided between the foundation layer and the functional layer. The stacked body includes a first stacked intermediate layer including a first GaN intermediate layer, a first high Al composition layer of Alx1Ga1-x1N (0
摘要翻译：根据一个实施例，氮化物半导体元件包括基底层，功能层和层叠体。层叠体设置在基础层和功能层之间。层叠体包括第一层叠中间层，其包括第一GaN中间层，Al x Ga 1-x N 1的第一高Al组成层（0

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