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1. 发明申请

US20050051721A1 Sample dimension-measuring method and charged particle beam apparatus 有权
标题翻译：样品尺寸测量方法和带电粒子束装置
公开(公告)号：US20050051721A1
公开(公告)日：2005-03-10
申请号：US10875509
申请日：2004-06-25
申请人： Kenji Watanabe , Tadashi Otaka , Ryo Nakagaki , Chie Shishido , Masakazu Takahashi , Yuya Toyoshima
发明人： Kenji Watanabe , Tadashi Otaka , Ryo Nakagaki , Chie Shishido , Masakazu Takahashi , Yuya Toyoshima
IPC分类号： G01B11/24 , G01B15/04 , G01N21/47 , G01N23/225 , H01J37/28 , H01L21/66 , G01N23/00
CPC分类号： G01N21/4788 , G01N23/225 , H01J2237/2816
摘要： A method and apparatus for efficiently executing two types of measurements with an optical measuring device and a scanning electron microscope are provided. For example, The method and apparatus for executing following steps of calculating an average of the dimensional values of said plurality of scanned feature objects; and calculating an offset of a dimensional value on the basis of a difference between the calculated average value and the dimensional value of said feature object obtained when the light is irradiated. The offset between measurement values between the optical measuring device and the scanning electron microscope can be required precisely by the above subject matter.
摘要翻译：提供了一种利用光学测量装置和扫描电子显微镜有效地执行两种测量的方法和装置。例如，用于执行以下步骤的方法和装置，用于计算所述多个扫描的特征对象的维度值的平均值; 并且基于所计算的平均值和当照射光时获得的所述特征对象的尺寸值之间的差异来计算尺寸值的偏移。精确地通过上述主题来要求光学测量装置和扫描电子显微镜之间的测量值之间的偏移。

2. 发明授权

US07476856B2 Sample dimension-measuring method and charged particle beam apparatus 有权
标题翻译：样品尺寸测量方法和带电粒子束装置
公开(公告)号：US07476856B2
公开(公告)日：2009-01-13
申请号：US10875509
申请日：2004-06-25
申请人： Kenji Watanabe , Tadashi Otaka , Ryo Nakagaki , Chie Shishido , Masakazu Takahashi , Yuya Toyoshima
发明人： Kenji Watanabe , Tadashi Otaka , Ryo Nakagaki , Chie Shishido , Masakazu Takahashi , Yuya Toyoshima
IPC分类号： G01N23/00 , G01B11/10
CPC分类号： G01N21/4788 , G01N23/225 , H01J2237/2816
摘要： A method and apparatus for efficiently executing two types of measurements with an optical measuring device and a scanning electron microscope are provided. For example, the method and apparatus may execute the following steps: calculating an average of the dimensional values of a plurality of scanned feature objects; and calculating an offset of a dimensional value on the basis of a difference between the calculated average value and the dimensional value of the feature object obtained when the light is irradiated. The offset between measurement values between the optical measuring device and the scanning electron microscope can be determined precisely.
摘要翻译：提供了一种利用光学测量装置和扫描电子显微镜有效地执行两种测量的方法和装置。例如，该方法和装置可以执行以下步骤：计算多个扫描的特征对象的维度值的平均值; 并且基于计算的平均值与照射光时获得的特征对象的尺寸值之间的差异来计算尺寸值的偏移。可以精确地确定光学测量装置与扫描电子显微镜之间的测量值之间的偏移。

3. 发明授权

US06476388B1 Scanning electron microscope having magnification switching control 有权
标题翻译：具有倍率切换控制的扫描电子显微镜
公开(公告)号：US06476388B1
公开(公告)日：2002-11-05
申请号：US09421093
申请日：1999-10-19
申请人： Ryo Nakagaki , Yuji Takagi , Atsushi Shimoda , Kenji Obara , Yasuhiko Ozawa , Hideka Bamba , Seiji Isogai , Kenji Watanabe , Chie Shishido , Toshiei Kurosaki
发明人： Ryo Nakagaki , Yuji Takagi , Atsushi Shimoda , Kenji Obara , Yasuhiko Ozawa , Hideka Bamba , Seiji Isogai , Kenji Watanabe , Chie Shishido , Toshiei Kurosaki
IPC分类号： G21K700
CPC分类号： G01N23/225 , H01J37/222 , H01J37/265 , H01J2237/24495 , H01J2237/2485 , H01J2237/2817
摘要： The invention is a scanning electron microscope including a switching control unit for controlling to switch at least scanning unit to switch a digital image signal of a low magnification based on a wide image taking field of view to and from a digital image signal of a high magnification based on a narrow image taking field of view from an A/D conversion unit and a beam spot diameter control unit for controlling to switch a spot diameter of electron beam on a surface of an object substrate in controlling to switch the signals by the switching control unit and a defect portion analyzing method using the scanning electron microscope.
摘要翻译：本发明是一种扫描电子显微镜，其特征在于，具备切换控制部，该切换控制部基于与高倍率的数字图像信号相对应的宽拍摄视场，至少切换扫描部，切换低倍率的数字图像信号基于来自A / D转换单元的窄图像拍摄视场和光束光斑直径控制单元，用于控制通过切换控制切换信号来控制在对象基板的表面上切换电子束的光斑直径单元和使用扫描电子显微镜的缺陷部分析方法。

4. 发明授权

US07216311B2 System and method for evaluating a semiconductor device pattern, method for controlling process of forming a semiconductor device pattern and method for monitoring a semiconductor device manufacturing process 有权
标题翻译：用于评估半导体器件图案的系统和方法，用于控制形成半导体器件图案的工艺的方法和用于监测半导体器件制造工艺的方法
公开(公告)号：US07216311B2
公开(公告)日：2007-05-08
申请号：US10648231
申请日：2003-08-27
申请人： Maki Tanaka , Chie Shishido , Ryo Nakagaki , Yuji Takagi
发明人： Maki Tanaka , Chie Shishido , Ryo Nakagaki , Yuji Takagi
IPC分类号： G06F17/50 , G06F9/45 , G01N23/00
CPC分类号： H01L22/20 , G11C29/006 , G11C2029/0403 , G11C2029/5002 , H01L2924/0002 , H01L2924/00
摘要： In order to realize a means for acquiring three-dimensional shape information about patterns by nondestruction and evaluate a relationship between the three-dimensional shape information about these patterns and device properties, a semiconductor device pattern evaluating system is provided with a feature index calculating means for quantifying a property of a three-dimensional shape of a pattern to be evaluated, as feature index, a database that records therein a relationship between the feature index of each three-dimensional pattern shape and a device property of a circuit containing patterns each having the feature index, and a device property estimating means for estimating a property of a device circuit formed by the pattern to be evaluated, on the basis of the feature index of the three-dimensional pattern shape, which have been quantified by the feature index calculating means, and the information recorded in the database.
摘要翻译：为了实现用于通过非破坏获取关于图案的三维形状信息的手段，并且评估关于这些图案的三维形状信息和装置特性之间的关系，半导体装置图案评估系统设置有特征指标计算装置，量化要评估的图案的三维形状的属性作为特征索引，记录其中每个三维图案形状的特征索引与包含各自具有所述三维图案形状的图案的电路的装置特性之间的关系的数据库特征索引，以及装置属性估计装置，用于根据由特征指标计算装置量化的三维图案形状的特征指标，估计由待评估图案形成的装置电路的特性，以及记录在数据库中的信息。

5. 发明申请

US20050205780A1 Scanning electron microscope and a method for evaluating accuracy of repeated measurement using the same 有权
标题翻译：扫描电子显微镜和使用其进行重复测量的精度的评估方法
公开(公告)号：US20050205780A1
公开(公告)日：2005-09-22
申请号：US10988522
申请日：2004-11-16
申请人： Ryo Nakagaki , Hiroki Kawada , Chie Shishido , Mayuka Oosaki
发明人： Ryo Nakagaki , Hiroki Kawada , Chie Shishido , Mayuka Oosaki
IPC分类号： G01B15/00 , G01N23/00 , G01N23/225 , G03C5/00 , H01J37/28
CPC分类号： G01N23/225
摘要： The present invention relates to a CDSEM (scanning electron microscope) capable of evaluating and presenting the measurement repeatability as a tool with a high degree of accuracy without being influenced by fluctuations in micro-minute shape that tend to increase with the microminiaturization of semiconductor patterns, and to a method for evaluating accuracy of repeated measurement using the scanning electron microscope. There is provided a function whereby when measuring a plurality of times the same part to be measured, by making use of a micro-minute pattern shape such as the roughness included in the pattern, pattern matching with a roughness template image is performed to correct two-dimensional deviation in position of the part to be measured on an enlarged measurement image acquired, and then an enlarged measurement area image is extracted and acquired. This makes it possible to eliminate variation in measurements caused by the micro-minute pattern shape.
摘要翻译：本发明涉及一种CDSEM（扫描电子显微镜），其能够以高精度评估和呈现作为工具的测量重复性，而不受半导体图案的微小化倾向于增加的微细形状的波动的影响，以及使用扫描电子显微镜评价重复测定的精度的方法。提供了一种功能，当通过利用包含在图案中的粗糙度的微细图案形状来测量多次相同的被测量部分时，执行与粗糙度模板图像的匹配，以校正两个在获取的放大测量图像上待测量部分的位置的维度偏差，然后提取并获取放大的测量区域图像。这使得可以消除由微微分图案形状引起的测量中的变化。

6. 发明申请

US20050016682A1 Method of setting etching parameters and system therefor 审中-公开
标题翻译：设置蚀刻参数及其系统的方法
公开(公告)号：US20050016682A1
公开(公告)日：2005-01-27
申请号：US10893275
申请日：2004-07-19
申请人： Wataru Nagatomo , Ryo Nakagaki , Maki Tanaka , Chie Shishido , Yuji Takagi
发明人： Wataru Nagatomo , Ryo Nakagaki , Maki Tanaka , Chie Shishido , Yuji Takagi
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/66 , C23F1/00
CPC分类号： H01L22/20 , H01L21/31116 , H01L21/32136 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a system that automatically calculates optimal etching parameters in order to perform desired etching in an etching process in semiconductor manufacturing. A model representing etching parameters and an etching performance quantitative value at the time when etching is performed with the etching parameters is prepared in advance, and when desired etching is performed, optimal etching parameters are calculated from the model.
摘要翻译：本发明涉及一种在半导体制造中在蚀刻工艺中自动计算最佳蚀刻参数以执行所需蚀刻的系统。预先准备表示蚀刻参数的模型和使用蚀刻参数进行蚀刻时的蚀刻性能定量值，并且当需要蚀刻时，根据该模型计算最佳蚀刻参数。

7. 发明授权

US07164127B2 Scanning electron microscope and a method for evaluating accuracy of repeated measurement using the same 有权
标题翻译：扫描电子显微镜和使用其进行重复测量的精度的评估方法
公开(公告)号：US07164127B2
公开(公告)日：2007-01-16
申请号：US10988522
申请日：2004-11-16
申请人： Ryo Nakagaki , Hiroki Kawada , Chie Shishido , Mayuka Oosaki
发明人： Ryo Nakagaki , Hiroki Kawada , Chie Shishido , Mayuka Oosaki
IPC分类号： G01N23/00
CPC分类号： G01N23/225
摘要： The present invention relates to a CDSEM (scanning electron microscope) capable of evaluating and presenting the measurement repeatability as a tool with a high degree of accuracy without being influenced by fluctuations in micro-minute shape that tend to increase with the microminiaturization of semiconductor patterns, and to a method for evaluating accuracy of repeated measurement using the scanning electron microscope. There is provided a function whereby when measuring a plurality of times the same part to be measured, by making use of a micro-minute pattern shape such as the roughness included in the pattern, pattern matching with a roughness template image is performed to correct two-dimensional deviation in position of the part to be measured on an enlarged measurement image acquired, and then an enlarged measurement area image is extracted and acquired. This makes it possible to eliminate variation in measurements caused by the micro-minute pattern shape.
摘要翻译：本发明涉及一种CDSEM（扫描电子显微镜），其能够以高精度评估和呈现作为工具的测量重复性，而不受半导体图案的微小化倾向于增加的微细形状的波动的影响，以及使用扫描电子显微镜评价重复测定的精度的方法。提供了一种功能，当通过利用包含在图案中的粗糙度的微细图案形状来测量多次相同的被测量部分时，执行与粗糙度模板图像的匹配，以校正两个在获取的放大测量图像上待测量部分的位置的维度偏差，然后提取并获取放大的测量区域图像。这使得可以消除由微微分图案形状引起的测量中的变化。

8. 发明申请

US20050247860A1 Electron microscope, measuring method using the same, electron microscope system, and method for controlling the system 有权
标题翻译：电子显微镜，使用其的测量方法，电子显微镜系统和控制系统的方法
公开(公告)号：US20050247860A1
公开(公告)日：2005-11-10
申请号：US11119934
申请日：2005-05-03
申请人： Chie Shishido , Ryo Nakagaki , Mayuka Oosaki , Hiroki Kawada
发明人： Chie Shishido , Ryo Nakagaki , Mayuka Oosaki , Hiroki Kawada
IPC分类号： G01B15/00 , G01N23/00 , G01N23/225 , G21K7/00 , H01J37/22 , H01J37/28 , H01J40/14 , H01L21/66
CPC分类号： H01J37/28 , G01N23/225 , H01J37/222 , H01J37/263 , H01J2237/24578 , H01J2237/2817 , H01J2237/2823
摘要： The present invention relates to an electron microscope which reduces a difference in measured values that occur due to a difference in resolution that cannot be fully adjusted which exists among electron microscopes, or occurs as time elapses, and a method for measuring dimensions. An operator adapted to compensate for changes of an electron image to be generated due to a difference in probe diameter is obtained in advance from electron images of one reference sample created by electron microscopes having different resolution (probe diameter). Then a compensation-measurement electron image which is equivalent to an electron image created under the same probe diameter by applying the operator for compensation, and the compensation-measurement electron image is used for measuring the dimensions.
摘要翻译：本发明涉及一种电子显微镜，其特征在于，减少由电子显微镜中存在的不能充分调整的分辨率的差异而发生的测量值的差异，或者随着时间的推移而发生的电子显微镜以及尺寸的测定方法。从具有不同分辨率（探针直径）的电子显微镜产生的一个参考样品的电子图像预先获得适于补偿由于探针直径差引起的电子图像变化的操作者。然后通过施加用于补偿的操作者，并且使用补偿测量电子图像来测量相当于在相同探针直径下产生的电子图像的补偿测量电子图像来测量尺寸。

9. 发明申请

US20060060774A1 Mesuring method and its apparatus 有权
标题翻译： Mesuring方法及其装置
公开(公告)号：US20060060774A1
公开(公告)日：2006-03-23
申请号：US11202146
申请日：2005-08-12
申请人： Mayuka Oosaki , Hiroki Kawada , Ryo Nakagaki , Chie Shishido
发明人： Mayuka Oosaki , Hiroki Kawada , Ryo Nakagaki , Chie Shishido
IPC分类号： G01N23/00
CPC分类号： G01N23/225
摘要： A method for measuring a dimension of a pattern formed on a sample using a secondary electron image obtained by picking up an image of the sample using a scanning electron microscope includes: obtaining a secondary electron image of a sample by picking up an image of the sample using a scanning electron microscope; creating, using the secondary electron image, an image profile of a pattern whose dimension is to be measured, within the obtained secondary electron image; retrieving a model profile that matches best with the created image profile from a plurality of model profiles prestored that are obtained from respective secondary electron images of a plurality of patterns, the cross sections of the plurality of patterns being of known shapes and dimensions and being different in shape; and obtaining a dimension of the pattern using information of the retrieved model profile.
摘要翻译：使用通过使用扫描电子显微镜拾取样品的图像获得的二次电子图像来测量在样品上形成的图案的尺寸的方法包括：通过拾取样品的图像获得样品的二次电子图像使用扫描电子显微镜; 在获得的二次电子图像中产生使用二次电子图像的尺寸要被测量的图案的图像轮廓; 从从多个图案的相应二次电子图像获得的预先存储的多个模型轮廓中检索与所创建的图像轮廓最佳匹配的模型轮廓，所述多个图案的横截面具有已知的形状和尺寸并且是不同的形状; 以及使用所检索的模型简档的信息来获得所述模式的维度。

10. 发明授权

US07408155B2 Measuring method and its apparatus 有权
标题翻译：测量方法及其装置
公开(公告)号：US07408155B2
公开(公告)日：2008-08-05
申请号：US11202146
申请日：2005-08-12
申请人： Mayuka Oosaki , Hiroki Kawada , Ryo Nakagaki , Chie Shishido
发明人： Mayuka Oosaki , Hiroki Kawada , Ryo Nakagaki , Chie Shishido
IPC分类号： G03F7/20 , G03F7/40
CPC分类号： G01N23/225
摘要： A method for measuring a dimension of a pattern formed on a sample using a secondary electron image obtained by picking up an image of the sample using a scanning electron microscope includes: obtaining a secondary electron image of a sample by picking up an image of the sample using a scanning electron microscope; creating, using the secondary electron image, an image profile of a pattern whose dimension is to be measured, within the obtained secondary electron image; retrieving a model profile that matches best with the created image profile from a plurality of model profiles prestored that are obtained from respective secondary electron images of a plurality of patterns, the cross sections of the plurality of patterns being of known shapes and dimensions and being different in shape; and obtaining a dimension of the pattern using information of the retrieved model profile.
摘要翻译：使用通过使用扫描电子显微镜拾取样品的图像获得的二次电子图像来测量在样品上形成的图案的尺寸的方法包括：通过拾取样品的图像获得样品的二次电子图像使用扫描电子显微镜; 在获得的二次电子图像中产生使用二次电子图像的尺寸要被测量的图案的图像轮廓; 从从多个图案的相应二次电子图像获得的预先存储的多个模型轮廓中检索与所创建的图像轮廓最佳匹配的模型轮廓，所述多个图案的横截面具有已知的形状和尺寸，并且是不同的形状; 以及使用所检索的模型简档的信息来获得所述模式的维度。

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