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    • 5. 发明授权
    • Information processor and method using the information processor
    • 信息处理器和使用信息处理器的方法
    • US5481528A
    • 1996-01-02
    • US124002
    • 1993-09-21
    • Ken EguchiOsamu TakamatsuEtsuro Kishi
    • Ken EguchiOsamu TakamatsuEtsuro Kishi
    • G01Q30/04G01N37/00G01Q60/16G01Q60/38G01Q70/06G01Q70/10G01Q80/00G11B9/00G11B9/14G11B21/02H01J37/28
    • G11B9/14G11B9/1409G11B9/1436G11B9/1463B82Y10/00Y10S977/947
    • An information processor for performing at least one of recording information at a high density, reproducing and erasing information by applying the principle of a scanning tunnel microscope (STM) or an atomic force microscope (AFM) and an information processing method using the information processor. The information .processor is used with a recording medium comprising a recording layer having a characteristic of one of an insulator and a semiconductor. The processor includes a substrate electrode in the recording medium, at least one probe electrode disposed close to the recording medium, and at least one of a circuit for applying an information recording pulse voltage and a circuit for applying an information reproducing pulse voltage. A maximum difference in surface level of a 1.times.1 .mu.m surface region of the substrate electrode is 1 nm or less, and the radius of curvature of a tip of the probe electrode is in the range of 0.1 to 200 .mu.m. The processor further includes a device for controlling the distance between a surface of the recording medium and the tip of the probe electrode.
    • 一种用于通过应用扫描隧道显微镜(STM)或原子力显微镜(AFM)的原理和使用该信息处理器的信息处理方法来执行高密度记录信息,再现和擦除信息中的至少一个的信息处理器。 信息处理器与包括具有绝缘体和半导体之一的特征的记录层的记录介质一起使用。 处理器包括记录介质中的基板电极,靠近记录介质设置的至少一个探针电极,以及用于施加信息记录脉冲电压的电路和用于施加信息再现脉冲电压的电路中的至少一个。 基板电极的1x1μm表面区域的表面水平的最大差异为1nm以下,探针电极的尖端的曲率半径在0.1〜200μm的范围内。 处理器还包括用于控制记录介质的表面与探针电极的尖端之间的距离的装置。
    • 7. 发明申请
    • IMAGE FORMING APPARATUS
    • 图像形成装置
    • US20070018560A1
    • 2007-01-25
    • US11470876
    • 2006-09-07
    • Yoichi AndoOsamu TakamatsuTaro HiroikeAkira Hayama
    • Yoichi AndoOsamu TakamatsuTaro HiroikeAkira Hayama
    • H01J63/04H01J1/62
    • H01J29/02H01J31/12
    • In order to prevent a spacer from being charged by using a plate shaped spacer covered with a high resistance film, the present invention is aimed at preventing irregular displacements of electron beams emitted from adjacent electron-emitting devices and suppressing displacements of impinging positions of the electron beams emitted from the adjacent electron-emitting devices even with a slight displacement of an installation position of the spacer. The spacer is disposed along a row directional wiring. The high resistance film is allowed to come into contact with a metal back and the row directional wiring to achieve electrical connection therebetween. Contact portions between the high resistance film of the spacer and the row directional wiring are provided at predetermined intervals.
    • 为了通过使用覆盖有高电阻膜的板状隔离物来防止间隔物的充电,本发明旨在防止从相邻的电子发射器件发射的电子束的不规则位移并且抑制电子的入射位置的位移 即使是间隔件的安装位置的轻微位移,也从相邻的电子发射器件发射的光束。 间隔件沿着行方向布线布置。 允许高电阻膜与金属背和行方向布线接触以实现其间的电连接。 间隔物的高电阻膜与行方向布线之间的接触部分以预定间隔设置。