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1. 发明申请

US20050282407A1 Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously 有权
标题翻译：使用同轴间隔的多个激光束点的半导体结构处理
公开(公告)号：US20050282407A1
公开(公告)日：2005-12-22
申请号：US11051500
申请日：2005-02-04
申请人： Kelly Bruland , Brian Baird , Ho Lo , Stephen Swaringen , Frank Evans
发明人： Kelly Bruland , Brian Baird , Ho Lo , Stephen Swaringen , Frank Evans
IPC分类号： B23K26/067 , H01L21/26 , H01L21/768
CPC分类号： B23K26/067 , H01L21/76894
摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method simultaneously directs the first and second laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row, so as to selectively irradiate structures in the row with one or more of the first and second laser beams simultaneously.
摘要翻译：方法和系统使用多个激光束选择性地照射半导体衬底上或内部的结构。这些结构被布置成在大体上沿长度方向延伸的一排。该方法产生沿着与半导体衬底相交的第一激光束轴传播的第一激光束和沿着与半导体衬底相交的第二激光束轴传播的第二激光束。该方法同时将第一和第二激光束引导到行中不同的第一和第二结构。该方法使第一激光束和第二激光束相对于半导体衬底在基本上平行于该行的长度方向的方向基本上一致地移动，以便用一个或多个第一和第二激光器选择性地照射该行中的结构梁同时进行。

2. 发明申请

US20050279736A1 Semiconductor structure processing using multiple laser beam spots spaced on-axis with cross-axis offset 有权
标题翻译：半导体结构的处理使用多个激光束点间隔轴上与横轴偏移
公开(公告)号：US20050279736A1
公开(公告)日：2005-12-22
申请号：US11051958
申请日：2005-02-04
申请人： Kelly Bruland , Brian Baird , Ho Lo , Stephen Swaringen , Frank Evans
发明人： Kelly Bruland , Brian Baird , Ho Lo , Stephen Swaringen , Frank Evans
IPC分类号： B23K26/00 , B23K26/06 , B23K26/067 , B23K26/08 , B23K26/10 , B23K26/38 , B23K26/40 , H01L21/768 , H01L23/525
CPC分类号： H01L23/5258 , B23K26/0613 , B23K26/0624 , B23K26/067 , B23K26/10 , B23K2101/40 , H01L21/76894 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto distinct first and second structures in the row. The second spot is offset from the first spot by some amount in a direction perpendicular to the lengthwise direction of the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.
摘要翻译：方法和系统使用多个激光束选择性地照射半导体衬底上或内部的结构。这些结构被布置成在大体上沿长度方向延伸的一排。该方法产生沿着与半导体衬底相交的第一激光束轴传播的第一激光束和沿着与半导体衬底相交的第二激光束轴传播的第二激光束。该方法将第一和第二激光束引导到行中不同的第一和第二结构。第二点在与行长度方向垂直的方向上偏离第一点一定量。该方法使第一激光束和第二激光束相对于半导体衬底在基本上平行于该行的长度方向的方向上大致一齐地沿着行移动。

3. 发明申请

US20050281101A1 Semiconductor structure processing using multiple laterally spaced laser beam spots with on-axis offset 有权
标题翻译：使用具有轴上偏移的多个横向间隔开的激光束点的半导体结构处理
公开(公告)号：US20050281101A1
公开(公告)日：2005-12-22
申请号：US11051265
申请日：2005-02-04
申请人： Kelly Bruland , Brian Baird , Ho Lo , Stephen Swaringen
发明人： Kelly Bruland , Brian Baird , Ho Lo , Stephen Swaringen
IPC分类号： G11C17/14 , G11C29/00 , H01L23/525
CPC分类号： H01L23/5258 , B23K26/0613 , B23K26/0622 , B23K26/0624 , B23K26/082 , G11C17/14 , G11C17/143 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems selectively irradiate electrically conductive structures on or within a semiconductor substrate using multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. One method propagates a first laser beam along a first propagation path having a first axis incident at a first location on or within the semiconductor substrate at a given time. The first location is either on a structure in a first row of structures or between two adjacent structures in the first row. The method also propagates a second laser beam along a second propagation path having a second axis incident at a second location on or within the semiconductor substrate at the given time. The second location is either on a structure in a second row of structures or between two adjacent structures in the second row. The second row is distinct from the first row, and the second location is offset from the first location by some amount in the lengthwise direction of the rows. The method moves the first and second laser beam axes substantially in unison in the lengthwise direction of the rows relative to the semiconductor substrate, so as to selectively irradiate structures in the first and second rows with the first and second laser beams respectively.
摘要翻译：方法和系统使用多个激光束选择性地照射半导体衬底上或内部的导电结构。这些结构被布置成沿大致长度方向延伸的多个基本上平行的行。一种方法在给定时间沿着第一传播路径传播第一激光束，该第一传播路径具有入射在半导体衬底上或半导体衬底上的第一位置的第一轴。第一个位置是在第一行结构中的结构上，或者在第一行的两个相邻结构之间。该方法还在给定时间沿第二传播路径传播第二激光束，该第二传播路径具有入射在半导体衬底上或第二位置的第二轴。第二位置在第二行结构中的结构上，或者位于第二行中的两个相邻结构之间。第二行与第一行不同，第二位置在行的长度方向上偏离第一位置一定量。该方法使第一和第二激光束轴相对于半导体衬底在行的长度方向基本一致地移动，以便分别用第一和第二激光束选择性地照射第一和第二行中的结构。

4. 发明申请

US20050279739A1 Semiconductor structure processing using multiple laser beam spots spaced on-axis to increase single-blow throughput 有权
标题翻译：使用在轴上间隔开的多个激光束点的半导体结构处理来增加单次打击吞吐量
公开(公告)号：US20050279739A1
公开(公告)日：2005-12-22
申请号：US11052000
申请日：2005-02-04
申请人： Kelly Bruland , Brian Baird , Ho Lo , Stephen Swaringen , Frank Evans
发明人： Kelly Bruland , Brian Baird , Ho Lo , Stephen Swaringen , Frank Evans
IPC分类号： B23K26/00 , B23K26/06 , B23K26/067 , B23K26/08 , B23K26/10 , B23K26/38 , B23K26/40 , H01L21/768 , H01L23/525
CPC分类号： H01L23/5258 , B23K26/0613 , B23K26/0624 , B23K26/067 , B23K26/10 , B23K2101/40 , H01L21/76894 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of pulsed laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first pulsed laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second pulsed laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs respective first and second pulses from the first and second pulsed laser beams onto distinct first and second structures in the row so as to complete irradiation of said structures with a single laser pulse per structure. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row, so as to selectively irradiate structures in the row with either the first or the second laser beam. The moving step results in a speed that is greater than would occur if only a single laser beam were utilized to irradiate the structures in the row.
摘要翻译：方法和系统使用多个脉冲激光束选择性地照射半导体衬底上或内部的结构。这些结构被布置成在大体上沿长度方向延伸的一排。该方法产生沿着与半导体衬底相交的第一激光束轴传播的第一脉冲激光束和沿着与半导体衬底相交的第二激光束轴传播的第二脉冲激光束。该方法将来自第一和第二脉冲激光束的相应的第一和第二脉冲引导到行中不同的第一和第二结构，以便用每个结构的单个激光脉冲完成所述结构的照射。该方法相对于半导体衬底基本上在与行的长度方向平行的方向基本上一致地移动第一和第二激光束轴线，以便用第一或第二激光束选择性地照射该行中的结构。移动步骤导致的速度大于如果仅使用单个激光束来照射行中的结构的速度。

5. 发明申请

US20080093349A1 ON-THE-FLY LASER BEAM PATH DITHERING FOR ENHANCING THROUGHPUT 有权
标题翻译：在飞行激光光束路径加强增强
公开(公告)号：US20080093349A1
公开(公告)日：2008-04-24
申请号：US11925562
申请日：2007-10-26
申请人： Kelly Bruland , Mark Unrath , Stephen Swaringen , Ho Lo , Clint Vandergiessen , Keith Grant
发明人： Kelly Bruland , Mark Unrath , Stephen Swaringen , Ho Lo , Clint Vandergiessen , Keith Grant
IPC分类号： B23K26/38
CPC分类号： G02B26/101
摘要： A laser-based workpiece processing system includes sensors connected to a sensor controller that converts sensor signals into focused spot motion commands for actuating a beam steering device, such as a two-axis steering mirror. The sensors may include a beam position sensor for correcting errors detected in the optical path, such as thermally-induced beam wandering in response to laser or acousto-optic modulator pointing stability, or optical mount dynamics.
摘要翻译：基于激光的工件处理系统包括连接到传感器控制器的传感器，传感器控制器将传感器信号转换成聚焦点运动命令，用于致动诸如双轴转向镜的光束转向装置。传感器可以包括用于校正在光路中检测到的误差的光束位置传感器，例如响应于激光或声光调制器指向稳定性的热感应波束漂移或光学安装动态。

6. 发明申请

US20050282319A1 Semiconductor structure processing using multiple laser beam spots overlapping lengthwise on a structure 有权
标题翻译：使用在结构上纵向重叠的多个激光束点的半导体结构处理
公开(公告)号：US20050282319A1
公开(公告)日：2005-12-22
申请号：US11051261
申请日：2005-02-04
申请人： Kelly Bruland , Brian Baird , Ho Lo , Richard Harris , Yunlong Sun
发明人： Kelly Bruland , Brian Baird , Ho Lo , Richard Harris , Yunlong Sun
IPC分类号： B23K26/06 , B23K26/067 , H01L21/00 , H01L21/26 , H01L21/302 , H01L21/324 , H01L21/42 , H01L21/461 , H01L21/477 , H01L21/84 , H01L23/525
CPC分类号： B23K26/067 , B23K26/0604 , B23K26/0613 , H01L21/76894 , H01L23/5258 , H01L27/1052 , H01L27/10894 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots. The total region is larger than the first beam spot and also larger than the second beam spot. The method sets respective first and second energy values of the first and second laser beam pulses to cause complete depthwise processing of the selected structure across the width of the structure in at least a portion of the total region.
摘要翻译：方法和系统使用激光脉冲来处理半导体衬底上或其中的选定结构。该结构具有表面，宽度和长度。随着激光脉冲处理所选择的结构，激光脉冲沿着沿扫描光束路径相对于衬底移动的轴传播。所述方法同时在所选择的结构上产生沿相应的第一和第二激光束轴线在不同的第一和第二位置与所选择的结构相交的第一和第二激光束脉冲。第一和第二激光束脉冲冲击所选结构的表面上相应的第一和第二光束点。每个光束点至少包含所选链接的宽度。第一和第二光束斑点沿着所选择的结构的长度在空间上彼此偏移以限定由第一和第二光束点两者覆盖的重叠区域，以及由第一和第二光束斑点中的一个或两个覆盖的总区域。总区域大于第一束斑，并且大于第二束斑。该方法设置第一和第二激光束脉冲的相应的第一和第二能量值，以便在整个区域的至少一部分中跨结构的宽度对所选结构进行完全深度处理。

7. 发明申请

US20050282367A1 Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures 有权
标题翻译：使用在非相邻结构上在轴上间隔开的多个激光束点的半导体结构处理
公开(公告)号：US20050282367A1
公开(公告)日：2005-12-22
申请号：US11051263
申请日：2005-02-04
申请人： Kelly Bruland , Brian Baird , Ho Lo , Frank Evans
发明人： Kelly Bruland , Brian Baird , Ho Lo , Frank Evans
IPC分类号： B23K26/067 , H01L21/425
CPC分类号： B23K26/067
摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto non-adjacent first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.
摘要翻译：方法和系统使用多个激光束选择性地照射半导体衬底上或内部的结构。这些结构被布置成在大体上沿长度方向延伸的一排。该方法产生沿着与半导体衬底相交的第一激光束轴传播的第一激光束和沿着与半导体衬底相交的第二激光束轴传播的第二激光束。该方法将第一和第二激光束引导到行中不相邻的第一和第二结构。该方法使第一激光束和第二激光束相对于半导体衬底在基本上平行于该行的长度方向的方向上大致一齐地沿着行移动。

8. 发明申请

US20050282406A1 Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows 有权
标题翻译：使用多个横向间隔开的激光束点进行多次打击的半导体结构处理
公开(公告)号：US20050282406A1
公开(公告)日：2005-12-22
申请号：US11051262
申请日：2005-02-04
申请人： Kelly Bruland , Brian Baird , Ho Lo
发明人： Kelly Bruland , Brian Baird , Ho Lo
IPC分类号： B23K26/067 , H01L21/26 , H01L21/768
CPC分类号： B23K26/067 , B23K26/0613 , H01L21/76894
摘要： Methods and systems process a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects a first target location on or within the semiconductor substrate. The method also generates a second laser beam that propagates along a second laser beam axis that intersects a second target location on or within the semiconductor substrate. The second target location is offset from the first target location in a direction perpendicular to the lengthwise direction of the rows by some amount such that, when the first target location is a structure on a first row of structures, the second target location is a structure or between two adjacent structures on a second row distinct from the first row. The method moves the semiconductor substrate relative to the first and second laser axes in a direction approximately parallel to the rows of structures, so as to pass the first target location along the first row to irradiate for a first time selected structures in the first row, and so as to simultaneously pass the second target location along the second row to irradiate for a second time structures previously irradiated by the first laser beam during a previous pass of the first target location along the second row.
摘要翻译：方法和系统处理具有多个结构的半导体衬底以选择性地照射多个激光束。这些结构被布置成沿大致长度方向延伸的多个基本上平行的行。该方法产生沿着与半导体衬底上或半导体衬底内的第一目标位置相交的第一激光束轴传播的第一激光束。该方法还产生沿着与半导体衬底上或第二靶标位置相交的第二激光束轴传播的第二激光束。第二目标位置在垂直于行长度方向的方向上偏离第一目标位置一定量，使得当第一目标位置是第一行结构上的结构时，第二目标位置是结构或在与第一行不同的第二行上的两个相邻结构之间。所述方法使所述半导体衬底相对于所述第一和第二激光轴在大致平行于所述结构行的方向上移动，以使所述第一目标位置沿着所述第一行通过，以在所述第一行中首次照射所选择的结构，并且沿着第二行同时通过第二目标位置以照射先前在第一目标位置沿着第二行的先前通过期间由第一激光束照射的第二时间结构。

9. 发明申请

US20070008534A1 Systems and methods for distinguishing reflections of multiple laser beams for calibration for semiconductor structure processing 有权
标题翻译：用于区分多个激光束的反射用于半导体结构处理的校准的系统和方法
公开(公告)号：US20070008534A1
公开(公告)日：2007-01-11
申请号：US11499394
申请日：2006-08-03
申请人： Ho Lo , David Hemenway , Brady Nilsen , Kelly Bruland
发明人： Ho Lo , David Hemenway , Brady Nilsen , Kelly Bruland
IPC分类号： G01B11/00
CPC分类号： H01L23/5258 , G11C17/14 , G11C17/143 , H01L2924/0002 , H01L2924/00
摘要： A system determines relative positions of a semiconductor substrate and a plurality of laser beam spots on or within the semiconductor substrate in a machine for selectively irradiating structures on or within the substrate using a plurality of laser beams. The system comprises a laser source, first and second laser beam propagation paths, first and second reflection sensors, and a processor. The laser source produces at least the first and second laser beams, which propagate toward the substrate along the first and second propagation paths, respectively, which have respective first and second axes that intersects the substrate at respective first and second spots. The reflection sensors are positioned to detect reflection of the spots, as the spots moves relative to the substrate, thereby generating reflection signals. The processor is configured to determine, based on the reflection signals, positions of the spots on or within the substrate.
摘要翻译：系统确定半导体衬底和机器中半导体衬底上或半导体衬底内的多个激光束点的相对位置，用于使用多个激光束选择性地照射衬底上或衬底内的结构。该系统包括激光源，第一和第二激光束传播路径，第一和第二反射传感器以及处理器。激光源至少产生第一和第二激光束，其分别沿着第一和第二传播路径朝着衬底传播，其具有在相应的第一和第二点处与衬底相交的相应的第一和第二轴。反射传感器被定位成检测点的反射，因为光点相对于基板移动，从而产生反射信号。处理器被配置为基于反射信号确定基板上或内部的斑点的位置。

10. 发明申请

US20060128073A1 Multiple-wavelength laser micromachining of semiconductor devices 审中-公开
标题翻译：半波长激光微加工半导体器件
公开(公告)号：US20060128073A1
公开(公告)日：2006-06-15
申请号：US11067464
申请日：2005-02-25
申请人： Yunlong Sun , Richard Harris , Kelly Bruland , Robert Hainsey , Ho Lo , Lei Sun
发明人： Yunlong Sun , Richard Harris , Kelly Bruland , Robert Hainsey , Ho Lo , Lei Sun
IPC分类号： H01L21/82 , B23K26/16
CPC分类号： H01L23/5258 , B23K26/0604 , B23K26/0613 , B23K26/0622 , B23K26/067 , B23K26/361 , B23K26/40 , B23K2103/08 , B23K2103/10 , B23K2103/12 , B23K2103/14 , B23K2103/172 , B23K2103/26 , B23K2103/50 , H01L2924/0002 , H01S3/10046 , H01S3/2383 , Y10S438/94 , H01L2924/00
摘要： A specially shaped laser pulse energy profile characterized by different laser wavelengths at different times of the profile provides reduced, controlled jitter to enable semiconductor device micromachining that achieves high quality processing and a smaller possible spot size.
摘要翻译：在轮廓不同时刻，不同激光波长的特殊形状的激光脉冲能量分布提供了减少的受控抖动，从而能够实现高质量处理和较小可能光斑尺寸的半导体器件微机械加工。

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