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1. 发明授权

US5686151A Method of forming a metal oxide film 失效
标题翻译：形成金属氧化膜的方法
公开(公告)号：US5686151A
公开(公告)日：1997-11-11
申请号：US603198
申请日：1996-02-20
申请人： Keitaro Imai , Masahiro Kiyotoshi , Haruo Okano
发明人： Keitaro Imai , Masahiro Kiyotoshi , Haruo Okano
IPC分类号： C23C16/40 , H01L21/8242 , H01L21/8246 , B05D3/06 , C23C16/00
CPC分类号： C23C16/408 , H01L27/11502 , H01L27/11507 , Y10S505/734
摘要： Disclosed is method of forming a metal oxide film including the steps of introducing a gas containing a metal compound having at least one element selected from the group consisting of carbon and a halogen element, into a process chamber accommodating a substrate, introducing a gas containing a compound having a hydroxyl group into the process chamber, introducing a gas containing oxygen which has been converted to a plasma state, into the process chamber, and forming the metal oxide film on the substrate using the gas containing a metal compound, the gas containing a compound having a hydroxyl group, and the gas containing oxygen which has been converted to a plasma state.
摘要翻译：公开了形成金属氧化物膜的方法，包括以下步骤：将含有选自碳和卤素元素的至少一种元素的金属化合物的气体引入容纳基板的处理室中，引入含有具有羟基的化合物进入处理室，将已经转化为等离子体状态的含氧气体引入处理室，并使用含有金属化合物的气体在基板上形成金属氧化物膜，该气体含有具有羟基的化合物和已经转化为等离子体状态的含氧气体。

2. 发明授权

US5641702A Method of making semiconductor integrated-circuit capacitor 失效
标题翻译：制造半导体集成电路电容器的方法
公开(公告)号：US5641702A
公开(公告)日：1997-06-24
申请号：US420649
申请日：1995-04-12
申请人： Keitaro Imai , Haruo Okano , Tomonori Aoyama , Yasunori Okayama
发明人： Keitaro Imai , Haruo Okano , Tomonori Aoyama , Yasunori Okayama
IPC分类号： H01L21/28 , H01L21/02 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108 , H01L29/49 , H01L29/92 , H01L21/70 , H01L27/00
CPC分类号： H01L27/10852 , H01L28/60 , H01L29/49 , H01L29/92 , H01L21/31604 , H01L28/55 , H01L28/56
摘要： A semiconductor integrated-circuit capacitor comprises a lower electrode formed on a semiconductor substrate, a capacitor insulating film formed on the lower electrode, and an upper electrode formed on the capacitor insulating film. The capacitor insulating film is made of a high-permittivity material, and at least one of the upper and lower electrodes is made of a carbon film or a multilayered film composed of a carbon film and a conductor film other than carbon.
摘要翻译：半导体集成电路电容器包括形成在半导体衬底上的下电极，形成在下电极上的电容器绝缘膜和形成在电容器绝缘膜上的上电极。电容绝缘膜由高电容率材料制成，上下电极中的至少一个由碳膜或由碳膜和除碳以外的导体膜构成的多层膜制成。

3. 发明授权

US5440157A Semiconductor integrated-circuit capacitor having a carbon film electrode 失效
标题翻译：具有碳膜电极的半导体集成电路电容器
公开(公告)号：US5440157A
公开(公告)日：1995-08-08
申请号：US094422
申请日：1993-07-16
申请人： Keitaro Imai , Haruo Okano , Tomonori Aoyama , Yasunori Okayama
发明人： Keitaro Imai , Haruo Okano , Tomonori Aoyama , Yasunori Okayama
IPC分类号： H01L21/28 , H01L21/02 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108 , H01L29/49 , H01L29/92 , H01L29/43
CPC分类号： H01L27/10852 , H01L28/60 , H01L29/49 , H01L29/92 , H01L21/31604 , H01L28/55 , H01L28/56
摘要： A semiconductor integrated-circuit capacitor comprises a lower electrode formed on a semiconductor substrate, a capacitor insulating film formed on the lower electrode, and an upper electrode formed on the capacitor insulating film. The capacitor insulating film is made of a high-permittivity material, and at least one of the upper and lower electrodes is made of a carbon film or a multilayered film composed of a carbon film and a conductor film other than carbon.
摘要翻译：半导体集成电路电容器包括形成在半导体衬底上的下电极，形成在下电极上的电容器绝缘膜和形成在电容器绝缘膜上的上电极。电容绝缘膜由高电容率材料制成，上下电极中的至少一个由碳膜或由碳膜和除碳以外的导体膜构成的多层膜制成。

4. 发明授权

US5879447A Semiconductor device and its fabricating method 失效
公开(公告)号：US5879447A
公开(公告)日：1999-03-09
申请号：US478765
申请日：1995-06-07
申请人： Takako Okada , Shigeru Kambayashi , Moto Yabuki , Shinji Onga , Yoshitaka Tsunashima , Yuuichi Mikata , Haruo Okano
发明人： Takako Okada , Shigeru Kambayashi , Moto Yabuki , Shinji Onga , Yoshitaka Tsunashima , Yuuichi Mikata , Haruo Okano
IPC分类号： H01L21/02 , H01L21/20 , H01L21/28 , H01L21/329 , H01L21/334 , H01L21/336 , H01L21/822 , H01L21/8249 , H01L27/04 , H01L27/06 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , C30B19/00
CPC分类号： H01L28/82 , H01L21/2022 , H01L21/28035 , H01L29/6609 , H01L29/66181 , H01L29/66613 , H01L29/66628 , H01L29/66651 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678 , H01L29/49 , H01L29/78654
摘要： A single crystal and a polycrystal having an excellent crystal quality and providing a highly reliable semiconductor device are formed by solid phase growth at low temperatures. An amorphous thin film is deposited on a substrate such that an average inter-atomic distance of main constituent element of the amorphous thin film is 1.02 times or more of an average inter-atomic distance of the elements in single crystal, and crystallization energy is applied to the amorphous thin film to perform solid phase growth to thereby form a single crystal. In another embodiment of the present invention, an amorphous semiconductor thin film is formed on a substrate or an insulating film such that an average inter-atomic distance distribution of main constituent element of the film substantially coincides with an average inter-atomic distance distribution of the element in a single crystal, and crystallization energy is applied to the amorphous semiconductor thin film to cause solid phase growth to thereby form a single crystalline semiconductor thin film.

5. 发明授权

US5660744A Plasma generating apparatus and surface processing apparatus 失效
标题翻译：等离子体发生装置和表面处理装置
公开(公告)号：US5660744A
公开(公告)日：1997-08-26
申请号：US492322
申请日：1995-06-19
申请人： Makoto Sekine , Keiji Horioka , Haruo Okano , Katsuya Okumura , Isahiro Hasegawa , Masaki Narita
发明人： Makoto Sekine , Keiji Horioka , Haruo Okano , Katsuya Okumura , Isahiro Hasegawa , Masaki Narita
IPC分类号： H01J37/32 , B23K10/00
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A surface processing apparatus comprises a container provided with a first electrode and a second electrode disposed opposite to the first electrode for supporting a substrate to be processed and filled with a gas at a reduced pressure, an electric field generator for generating an electric field between the first and second electrodes, and a magnetic field generator for generating a magnetic field in the vacuum container. The magnetic field generator comprises a plurality of magnet element groups arranged in a circle around the container so as to form a ring, each of the magnet element groups having an axis directed to a center of the circle and a synthetic magnetization direction and comprising one or a plurality of magnet elements having respective magnetization directions which are synthesized to be equal to the synthetic magnetization direction of the each of the magnetic element groups. One of the magnet element groups is so disposed that the synthetic magnetization direction thereof coincides with the axis thereof, and each of the magnet element groups other than the one magnet element group is so disposed that an angle of the synthetic magnetization direction thereof relative to the synthetic magnetization direction of the one magnet element group is substantially twice an angle of the axis thereof relative to the axis of the one magnet element group.
摘要翻译：表面处理装置包括：容器，其设置有第一电极和与第一电极相对设置的第二电极，用于支撑待处理的基板并在减压下填充气体;电场发生器，用于在第一电极之间产生电场; 第一和第二电极以及用于在真空容器中产生磁场的磁场发生器。磁场发生器包括围绕容器布置成圆形的多个磁体元件组，以便形成环，每个磁体元件组具有指向圆心的合成磁化方向的轴线，并包括一个或多个多个磁体元件，其各自的磁化方向被合成为等于每个磁性元件组的合成磁化方向。一个磁体元件组被设置成合成磁化方向与其轴线重合，并且除了一个磁体元件组之外的每个磁体元件组被设置成使得其合成磁化方向相对于一个磁体元件组的合成磁化方向基本上是相对于一个磁体元件组的轴线的轴的两倍。

6. 发明授权

US5597341A Semiconductor planarizing apparatus 失效
标题翻译：半导体平面化装置
公开(公告)号：US5597341A
公开(公告)日：1997-01-28
申请号：US451226
申请日：1995-05-26
申请人： Masako Kodera , Hiroyuki Yano , Atsushi Shigeta , Riichirou Aoki , Hiromi Yajima , Haruo Okano
发明人： Masako Kodera , Hiroyuki Yano , Atsushi Shigeta , Riichirou Aoki , Hiromi Yajima , Haruo Okano
IPC分类号： B24B37/04 , B24B49/00 , B24B49/02 , B24B49/04 , B24B49/16 , C09K3/14 , H01L21/3105 , H01L21/66 , H01L21/768 , B24B51/00
CPC分类号： B24B37/013 , B24B37/04 , B24B49/00 , B24B49/02 , B24B49/04 , B24B49/16 , C09K3/1463 , H01L21/31051 , H01L21/31053 , H01L21/76819 , H01L22/26 , H01L2924/0002
摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metal is during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.
摘要翻译：为了平坦化形成在半导体衬底上的绝缘膜，使用含有氧化铈的抛光浆料来抛光绝缘膜的表面。使用包含二氧化铈的浆料作为抛光剂，在抛光过程中绝缘膜不被碱金属污染。此外，以增强的抛光速率对绝缘膜进行抛光。

7. 发明授权

US5582640A Semiconductor device and its fabricating method 失效
公开(公告)号：US5582640A
公开(公告)日：1996-12-10
申请号：US56443
申请日：1993-04-30
申请人： Takako Okada , Shigeru Kambayashi , Moto Yabuki , Shinji Onga , Yoshitaka Tsunashima , Yuuichi Mikata , Haruo Okano
发明人： Takako Okada , Shigeru Kambayashi , Moto Yabuki , Shinji Onga , Yoshitaka Tsunashima , Yuuichi Mikata , Haruo Okano
IPC分类号： H01L21/02 , H01L21/20 , H01L21/28 , H01L21/329 , H01L21/334 , H01L21/336 , H01L21/822 , H01L21/8249 , H01L27/04 , H01L27/06 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786
CPC分类号： H01L28/82 , H01L21/2022 , H01L21/28035 , H01L29/6609 , H01L29/66181 , H01L29/66613 , H01L29/66628 , H01L29/66651 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678 , H01L29/49 , H01L29/78654
摘要： A single crystal and a polycrystal having an excellent crystal quality and providing a highly reliable semiconductor device are formed by solid phase growth at low temperatures. An amorphous thin film is deposited on a substrate such that an average inter-atomic distance of main constituent element of the amorphous thin film is 1.02 times or more of an average inter-atomic distance of the elements in single crystal, and crystallization energy is applied to the amorphous thin film to perform solid phase growth to thereby form a single crystal. In another embodiment of the present invention, an amorphous semiconductor thin film is formed on a substrate or an insulating film such that an average inter-atomic distance distribution of main constituent element of the film substantially coincides with an average inter-atomic distance distribution of the element in a single crystal, and crystallization energy is applied to the amorphous semiconductor thin film to cause solid phase growth to thereby form a single crystalline semiconductor thin film.

8. 发明授权

US5458919A Method for forming a film on a substrate by activating a reactive gas 失效
标题翻译：通过活化气体在基板上形成膜的方法
公开(公告)号：US5458919A
公开(公告)日：1995-10-17
申请号：US323693
申请日：1994-10-18
申请人： Haruo Okano , Sadahisa Noguchi
发明人： Haruo Okano , Sadahisa Noguchi
IPC分类号： C23C16/04 , C23C16/40 , C23C16/44 , C23C16/46 , H01L21/205 , H01L21/316 , H01L21/318 , H01L21/768 , C23C16/00 , B05D3/06
CPC分类号： H01L21/02274 , C23C16/045 , C23C16/402 , C23C16/44 , C23C16/46 , H01L21/02126 , H01L21/02129 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02271 , H01L21/02277 , H01L21/02337 , H01L21/31604 , H01L21/31612 , H01L21/31625 , H01L21/3185 , H01L21/76879 , Y10S148/05
摘要： A thin film forming method which comprises the steps of supporting a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel; introducing a reactive gas into the reaction vessel; activating the reactive gas to form a deposit species, the deposit species characterized by a phase diagram including a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point; and forming a thin film containing at least a part of the deposit species on the substrate while retaining a pressure in the reaction vessel higher than the triple point of the phase diagram of the deposit species, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of the deposit species.
摘要翻译：一种薄膜形成方法，包括以下步骤：在反应容器中支撑待处理的衬底，其上具有沟槽或不均匀性; 将反应性气体引入反应容器中; 激活反应气体以形成沉积物，所述沉积物质的特征在于包括由三维点相交的熔解曲线和蒸发曲线限定的液相区域的相图; 以及在所述基板上形成含有至少一部分所述沉积物质的薄膜，同时保持所述反应容器内的压力高于所述沉积物相图的三相点，并将所述基板的温度保持在所述液相中矿床相图的区域。

9. 发明授权

US5444207A Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field 失效
标题翻译：等离子体产生装置和用于在均匀磁场中处理晶片的表面处理装置和方法
公开(公告)号：US5444207A
公开(公告)日：1995-08-22
申请号：US37169
申请日：1993-03-26
申请人： Makoto Sekine , Keiji Horioka , Haruo Okano , Katsuya Okumura , Isahiro Hasegawa , Masaki Narita
发明人： Makoto Sekine , Keiji Horioka , Haruo Okano , Katsuya Okumura , Isahiro Hasegawa , Masaki Narita
IPC分类号： B23K10/00 , H01J37/32 , H01L21/00 , H05H1/18
CPC分类号： H01J37/32623 , B23K10/003 , H01J37/3266
摘要： A surface processing device and method for forming a magnetic field having a uniform strength over a wide area of an electrode surface to generate a uniform high density plasma over the overall surface of a wafer. The device comprises a vacuum container contains a first electrode and a second electrode disposed opposite to the first electrode; a gas feeding system for feeding a predetermined gas into the vacuum container; an evacuating system for maintaining the inside of the container at a reduced pressure; an electric field generating system for generating an electric field in a region between the first and second electrodes; and a magnetic field generating system for generating a magnetic field in the vacuum container. The magnetic field generating system comprising a plurality of magnets arranged around the outer periphery of the container so as to form a ring in such a manner that directions of magnetization thereof differ from adjacent magnetic element making a 720 degree rotation along the circumference of said ring.
摘要翻译：一种用于形成在电极表面的广泛区域上具有均匀强度的磁场的表面处理装置和方法，以在晶片的整个表面上产生均匀的高密度等离子体。该装置包括：真空容器，包含第一电极和与第一电极相对设置的第二电极; 用于将预定气体供给到真空容器中的气体供给系统; 用于在减压下保持容器内部的排气系统; 用于在第一和第二电极之间的区域中产生电场的电场产生系统; 以及用于在真空容器中产生磁场的磁场产生系统。磁场产生系统包括围绕容器的外周布置的多个磁体，以便形成环，使得其磁化方向与相邻的磁性元件不同，沿着所述环的圆周旋转720度。

10. 发明授权

US5424246A Method of manufacturing semiconductor metal wiring layer by reduction of metal oxide 失效
标题翻译：通过还原金属氧化物制造半导体金属布线层的方法
公开(公告)号：US5424246A
公开(公告)日：1995-06-13
申请号：US99695
申请日：1993-07-30
申请人： Mie Matsuo , Haruo Okano , Nobuo Hayasaka , Kyoichi Suguro , Hideshi Miyajima , Jun-ichi Wada
发明人： Mie Matsuo , Haruo Okano , Nobuo Hayasaka , Kyoichi Suguro , Hideshi Miyajima , Jun-ichi Wada
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/528 , H01L23/532 , H01L21/205
CPC分类号： H01L21/76877 , H01L21/28518 , H01L21/76823 , H01L21/76838 , H01L21/76849 , H01L23/5283 , H01L23/53238 , H01L2924/0002 , H01L2924/12044
摘要： According to this invention, there is provided a method of forming a groove wiring layer, including the steps of forming a metal oxide film, consisting of a metal oxide having a decrease in standard free energy smaller than a decrease in standard free energy of a hydrogen oxide or of a carbon oxide, on an insulating film formed on a semiconductor substrate, and reducing the metal oxide film to form an electrode-wiring layer consisting of a metal which is a main component constituting the metal oxide. In this manner, an electrode-wiring layer having high EM and SM resistances without causing an increase in electric resistivity caused by an impurity or the like can be obtained.
摘要翻译：根据本发明，提供一种形成沟槽布线层的方法，包括形成金属氧化物膜的步骤，该金属氧化物膜由标准自由能降低的金属氧化物组成，其小于氢的标准自由能的降低氧化物或碳氧化物，在形成于半导体衬底上的绝缘膜上，还原金属氧化物膜，形成由作为构成金属氧化物的主要成分的金属构成的电极配线层。以这种方式，可以获得具有高EM和SM电阻而不引起由杂质引起的电阻率增加的电极布线层等。

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