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1. 发明授权

US07176098B2 Semiconductor element and method for fabricating the same 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US07176098B2
公开(公告)日：2007-02-13
申请号：US11062851
申请日：2005-02-23
申请人： Keisuke Kojima , Toshiharu Tanbo , Keiichi Murayama
发明人： Keisuke Kojima , Toshiharu Tanbo , Keiichi Murayama
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L29/7371 , H01L29/0817 , H01L29/66318
摘要： A heterojunction bipolar transistor comprises a collector layer, a base layer formed on the collector layer and an emitter layer formed on the base layer. The emitter layer includes a first semiconductor layer covering the entire top surface of the base layer and a second semiconductor layer formed on a predetermined part of the first semiconductor layer. An inactivated region is formed, by ion implantation, in a region of the collector layer located below the base layer except for a part thereof corresponding to the second semiconductor layer. The edge of the inactivated region is located away from the edge of the second semiconductor layer, and a region of the first semiconductor layer between the edge of the inactivated region and the edge of the second semiconductor layer is depleted.
摘要翻译：异质结双极晶体管包括集电极层，形成在集电极层上的基极层和形成在基极层上的发射极层。发射极层包括覆盖基底层的整个顶表面的第一半导体层和形成在第一半导体层的预定部分上的第二半导体层。通过离子注入在位于基底层下方的除了与第二半导体层相对应的部分之外的集电极层的区域中形成钝化区域。钝化区域的边缘位于远离第二半导体层的边缘的位置，并且在非活化区域的边缘和第二半导体层的边缘之间的第一半导体层的区域被耗尽。

2. 发明申请

US20050199911A1 Semiconductor element and method for fabricating the same 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US20050199911A1
公开(公告)日：2005-09-15
申请号：US11062851
申请日：2005-02-23
申请人： Keisuke Kojima , Toshiharu Tanbo , Keiichi Murayama
发明人： Keisuke Kojima , Toshiharu Tanbo , Keiichi Murayama
IPC分类号： H01L21/331 , H01L29/737 , H01L29/739
CPC分类号： H01L29/7371 , H01L29/0817 , H01L29/66318
摘要： A heterojunction bipolar transistor comprises a collector layer, a base layer formed on the collector layer and an emitter layer formed on the base layer. The emitter layer includes a first semiconductor layer covering the entire top surface of the base layer and a second semiconductor layer formed on a predetermined part of the first semiconductor layer. An inactivated region is formed, by ion implantation, in a region of the collector layer located below the base layer except for a part thereof corresponding to the second semiconductor layer. The edge of the inactivated region is located away from the edge of the second semiconductor layer, and a region of the first semiconductor layer between the edge of the inactivated region and the edge of the second semiconductor layer is depleted.
摘要翻译：异质结双极晶体管包括集电极层，形成在集电极层上的基极层和形成在基极层上的发射极层。发射极层包括覆盖基底层的整个顶表面的第一半导体层和形成在第一半导体层的预定部分上的第二半导体层。通过离子注入在位于基底层下方的除了与第二半导体层相对应的部分之外的集电极层的区域中形成钝化区域。钝化区域的边缘位于远离第二半导体层的边缘的位置，并且在非活化区域的边缘和第二半导体层的边缘之间的第一半导体层的区域被耗尽。

3. 发明申请

US20050199909A1 Heterojunction bipolar transistor and manufacturing method thereof 有权
标题翻译：异质结双极晶体管及其制造方法
公开(公告)号：US20050199909A1
公开(公告)日：2005-09-15
申请号：US10980254
申请日：2004-11-04
申请人： Keiichi Murayama , Yorito Ota , Akiyoshi Tamura
发明人： Keiichi Murayama , Yorito Ota , Akiyoshi Tamura
IPC分类号： H01L21/331 , H01L29/205 , H01L29/737 , H01L29/739
CPC分类号： H01L29/66318 , H01L29/0817 , H01L29/7371
摘要： The present invention aims at providing a heterojunction bipolar transistor having improved breakdown voltage on operation for high power output, and includes: a GaAs semiconductor substrate 100; an n+-type GaAs sub-collector layer 110; an n-type GaAs collector layer 120; a p-type GaAs base layer 130; an emitter layer 140; an n-type GaAs emitter cap layer 150; and an n-type InGaAs emitter contact layer 160. The emitter layer 140 has a multilayer structure including an n-type or non-doped first emitter layer 141 and an n-type second emitter layer 142 which are laminated in sequence. The first emitter layer 141 is made of a semiconductor material including Al, while the second emitter layer 142 is made of InxGa1-xP (0
摘要翻译：本发明的目的在于提供一种异质结双极晶体管，其具有在高功率输出操作时具有改进的击穿电压，并且包括：GaAs半导体衬底100; 一个n + +型GaAs子集电极层110; n型GaAs集电极层120; p型GaAs基极层130; 发射极层140; n型GaAs发射极帽层150; 和n型InGaAs发射极接触层160.发射极层140具有包括依次层叠的n型或非掺杂的第一发射极层141和n型第二发射极层142的多层结构。第一发射极层141由包括Al的半导体材料制成，而第二发射极层142由In x Ga 1-x P（0

4. 发明申请

US20050145884A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050145884A1
公开(公告)日：2005-07-07
申请号：US10902120
申请日：2004-07-30
申请人： Masanobu Nogome , Akiyoshi Tamura , Keiichi Murayama
发明人： Masanobu Nogome , Akiyoshi Tamura , Keiichi Murayama
IPC分类号： H01L21/331 , H01L29/737 , H01L29/739
CPC分类号： H01L29/7371 , H01L29/0821
摘要： It is the object of the present invention to provide a semiconductor device having an improved breakdown voltage on high power output, the semiconductor device comprising a n-type GaAs subcollector layer 101, a n-type GaAs intermediate collector layer 102 formed between a collector layer 103 and the subcollector layer 101, the n-type GaAs collector layer 103, a p-type GaAs base layer 104, a n-type InGaP second emitter layer 105, a n-type GaAs first emitter layer 106, and a n-type InGaAs emitter contact layer 107, and a concentration of impurities in the intermediate collector layer 102 is higher than a concentration of impurities in the collector layer 103 and is lower than a concentration of impurities in the subcollector layer 101.
摘要翻译：本发明的目的是提供一种在高功率输出上具有改进的击穿电压的半导体器件，该半导体器件包括n型GaAs子集电极层101，n型GaAs中间集电极层102，其形成在集电极层 103和子集电极层101，n型GaAs集电极层103，p型GaAs基极层104，n型InGaP第二发射极层105，n型GaAs第一发射极层106和n型 InGaAs发射极接触层107，并且中间集电极层102中的杂质浓度高于集电极层103中的杂质浓度，并且低于子集电极层101中的杂质浓度。

5. 发明申请

US20050078081A1 Liquid crystal display device 审中-公开
标题翻译：液晶显示装置
公开(公告)号：US20050078081A1
公开(公告)日：2005-04-14
申请号：US10981640
申请日：2004-11-05
申请人： Kyoichiro Oda , Akimasa Yuuki , Shin Tahata , Toshio Tobita , Shiro Miyake , Kazuhiro Kobayashi , Keiichi Murayama
发明人： Kyoichiro Oda , Akimasa Yuuki , Shin Tahata , Toshio Tobita , Shiro Miyake , Kazuhiro Kobayashi , Keiichi Murayama
IPC分类号： G02F1/13357 , G02F1/133 , G09G3/20 , G09G3/34 , G09G3/36 , H04N5/66
CPC分类号： G09G3/342 , G09G3/2011 , G09G3/3648 , G09G2310/0224 , G09G2310/024 , G09G2310/061 , G09G2310/08 , G09G2320/0252 , G09G2320/0261 , G09G2320/0285 , G09G2320/041 , G09G2320/0633 , G09G2320/064 , G09G2340/16
摘要： A liquid crystal display device comprising a including signal correcting means correction for correcting a level of an original image signal to a level with which transmittance in a steady state of the pixel with the original image signal is attained within one frame period, a horizontal driving means for driver applying a voltage in correspondence with the corrected image signal to a liquid crystal material, and an illumination device for illuminating the display panel with a plurality of light emitting regions thereof, said the light emitting regions sequentially turns turning on and off in synchronization with the application of the corrected image signal, while holding a definite time delay thereto.
摘要翻译：一种液晶显示装置，包括：信号校正装置校正装置，用于将原始图像信号的电平校正到在一个帧周期内获得具有原始图像信号的像素的稳定状态下的透射率的水平;水平驱动装置驱动器将对应于校正图像信号的电压施加到液晶材料，以及照明装置，用于以多个发光区域照亮显示面板，所述发光区域顺序地与校正图像信号的应用，同时保持一定的时间延迟。

6. 发明授权

US07728357B2 Heterojunction bipolar transistor and manufacturing method thereof 有权
标题翻译：异质结双极晶体管及其制造方法
公开(公告)号：US07728357B2
公开(公告)日：2010-06-01
申请号：US11614113
申请日：2006-12-21
申请人： Keiichi Murayama , Akiyoshi Tamura , Hirotaka Miyamoto , Kenichi Miyajima
发明人： Keiichi Murayama , Akiyoshi Tamura , Hirotaka Miyamoto , Kenichi Miyajima
IPC分类号： H01L29/739
CPC分类号： H01L29/7371 , H01L29/0821 , H01L29/66318
摘要： The object of the present invention is to provide a heterojunction bipolar transistor with high breakdown tolerance which can be manufactured at a high reproducibility and a high yield, the heterojunction bipolar transistor includes: a sub-collector layer; a collector layer formed on the sub-collector layer; a base layer formed on the collector layer; and an emitter layer, which is formed on the base layer and is made of a semiconductor that has a larger bandgap than a semiconductor of the base layer, in which the collector layer includes: a first collector layer formed on the sub-collector layer; a second collector layer formed on the first collector layer; and a third collector layer formed between the second collector layer and the base layer, a semiconductor of the first collector layer differs from semiconductors of the third collector layer and the second collector layer, and an impurity concentration of the second collector layer is lower than an impurity concentration of the sub-collector layer and higher than an impurity concentration of the third collector layer.
摘要翻译：本发明的目的是提供一种能够以高再现性和高产率制造的具有高击穿耐受性的异质结双极晶体管，该异质结双极晶体管包括：亚集电极层; 形成在所述副集电极层上的集电体层; 形成在集电体层上的基层; 以及发射极层，其形成在所述基底层上并且由具有比所述基底层的半导体更大的带隙的半导体形成，所述集电极层包括：形成在所述副集电极层上的第一集电体层; 形成在所述第一集电体层上的第二集电体层; 以及形成在所述第二集电体层和所述基极层之间的第三集电体层，所述第一集电体层的半导体与所述第三集电体层和所述第二集电体层的半导体不同，所述第二集电体层的杂质浓度低于副集电极层的杂质浓度高于第三集电体层的杂质浓度。

7. 发明申请

US20060267047A1 Hetero-junction bipolar transistor and manufacturing method of the same 审中-公开
标题翻译：异质结双极晶体管及其制造方法相同
公开(公告)号：US20060267047A1
公开(公告)日：2006-11-30
申请号：US11406581
申请日：2006-04-17
申请人： Keiichi Murayama
发明人： Keiichi Murayama
IPC分类号： H01L31/00
CPC分类号： H01L29/7371 , H01L29/41708 , H01L29/42304 , H01L29/66318
摘要： Ion implantation is performed on a collector area under an external base area, and a capacitance film is provided on the external base area above the collector area.
摘要翻译：在外部基极区域的集电区域进行离子注入，并且在集电体区域上方的外部基极区域设置电容膜。

8. 发明授权

US07001820B1 Heterojunction bipolar transistor and method for fabricating the same 失效
标题翻译：异质结双极晶体管及其制造方法
公开(公告)号：US07001820B1
公开(公告)日：2006-02-21
申请号：US11066220
申请日：2005-02-28
申请人： Kenichi Miyajima , Akiyoshi Tamura , Keiichi Murayama
发明人： Kenichi Miyajima , Akiyoshi Tamura , Keiichi Murayama
IPC分类号： H01L21/331
CPC分类号： H01L29/66318 , H01L29/7371
摘要： The following layers are successively formed on a heavily-doped n-type first subcollector layer: a heavily-doped n-type second subcollector layer made of a material having a small band gap; an i-type or a lightly-doped n-type collector layer; a heavily-doped p-type base layer; an n-type emitter layer made of a material having a large band gap; a heavily-doped n-type emitter cap layer; and a heavily-doped n-type emitter contact layer made of a material having a small band gap. Alloying reaction layers are formed under an emitter electrode, a base electrode and a collector electrode.
摘要翻译：在重掺杂n型第一子集电极层上依次形成以下层：由具有小带隙的材料制成的重掺杂n型第二子集电极层; i型或轻掺杂的n型集电极层; 重掺杂p型基层; 由具有大带隙的材料制成的n型发射极层; 重掺杂的n型发射极盖层; 以及由具有小带隙的材料制成的重掺杂n型发射极接触层。合金反应层形成在发射电极，基极和集电极之下。

9. 发明授权

US06816142B2 Liquid crystal display device 失效
公开(公告)号：US06816142B2
公开(公告)日：2004-11-09
申请号：US09986902
申请日：2001-11-13
申请人： Kyoichiro Oda , Akimasa Yuuki , Shin Tahata , Toshio Tobita , Shiro Miyake , Kazuhiro Kobayashi , Keiichi Murayama
发明人： Kyoichiro Oda , Akimasa Yuuki , Shin Tahata , Toshio Tobita , Shiro Miyake , Kazuhiro Kobayashi , Keiichi Murayama
IPC分类号： G09G336
CPC分类号： G09G3/342 , G09G3/2011 , G09G3/3648 , G09G2310/0224 , G09G2310/024 , G09G2310/061 , G09G2310/08 , G09G2320/0252 , G09G2320/0261 , G09G2320/0285 , G09G2320/041 , G09G2320/0633 , G09G2320/064 , G09G2340/16
摘要： A liquid crystal display device comprising a signal correcting means for correcting a level of an original image signal to a level with which transmittance in a steady state of the pixel with the original image signal is attained within one frame period, a horizontal driving means for applying a voltage in correspondence with the corrected image signal to liquid crystal, and an illumination device for illuminating the display panel with a plurality of light emitting regions thereof, said light emitting regions sequentially turns on and off in synchronization with the application of the corrected image signal while holding a definite time delay thereto.

10. 发明授权

US5960897A Auxiliary vehicle driving system 失效
标题翻译：辅助车辆驾驶系统
公开(公告)号：US5960897A
公开(公告)日：1999-10-05
申请号：US921252
申请日：1997-08-29
申请人： Takehiko Furuya , Keiichi Murayama , Yasuharu Oyama , Yutaka Arimura
发明人： Takehiko Furuya , Keiichi Murayama , Yasuharu Oyama , Yutaka Arimura
IPC分类号： B60K17/356 , B60K6/20 , B60K6/26 , B60K6/40 , B60K6/44 , B60K6/52 , B60K6/547 , B60K7/00 , B60L11/14 , B60W10/06 , B60W10/08 , B60W20/00 , F02D29/02 , B60K1/00
CPC分类号： B60W20/50 , B60K6/26 , B60K6/383 , B60K6/40 , B60K6/52 , B60K6/547 , B60K7/0007 , B60W10/06 , B60W10/08 , B60W20/00 , B60K17/043 , B60K17/356 , B60K2007/0038 , B60K2007/0076 , B60L2220/46 , B60L2240/441 , B60L2240/486 , B60W2050/0297 , B60W2510/0638 , B60W2520/10 , B60W2540/06 , B60W2540/12 , B60W2540/16 , Y02T10/6265 , Y02T10/6286 , Y10S903/903 , Y10S903/906 , Y10S903/913 , Y10S903/916 , Y10S903/919 , Y10S903/951
摘要： An auxiliary driving system is provided to ensure that a vehicle equipped with an automatic transmission can be moved or permitted to travel without use of the driving force of the vehicle engine in the event of an emergency. The main driving wheels are normally driven through an engine and an automatic transmission and a pair of auxiliary driving wheels are driven by motors. In a usual state, the motors are used to generate an auxiliary driving force or a creep force in the vehicle. However, if the vehicle engine is stopped due to engine trouble or failure, the motors can be driven based on the amount of accelerator pedal depressed to rotate the auxiliary driving wheels and thereby permit the vehicle to travel. Thus, movement of the vehicle can be easily accommodated in the event of an emergency such as when the vehicle engine has failed.
摘要翻译：提供辅助驾驶系统，以确保在紧急情况下，不使用车辆发动机的驱动力，可以使配备有自动变速器的车辆移动或允许行驶。主驱动轮通常通过发动机和自动变速器驱动，一对辅助驱动轮由电动机驱动。在通常状态下，电动机用于在车辆中产生辅助驱动力或蠕变力。然而，如果车辆发动机由于发动机故障或故障而停止，则可以基于压下的加速踏板的量来驱动电动机，以使辅助驱动轮旋转，从而允许车辆行驶。因此，在车辆发动机出现故障等紧急情况下，能够容易地适应车辆的移动。

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