专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5624719A Process for synthesizing diamond in a vapor phase 失效
标题翻译：在气相中合成金刚石的方法
公开(公告)号：US5624719A
公开(公告)日：1997-04-29
申请号：US279088
申请日：1994-07-22
申请人： Keiichiro Tanabe , Takahiro Imai , Naoji Fujimori
发明人： Keiichiro Tanabe , Takahiro Imai , Naoji Fujimori
IPC分类号： C23C16/27 , C30B25/02 , B01J3/06
CPC分类号： C23C16/27 , C23C16/277 , C30B25/02 , C30B29/04
摘要： A method for synthesizing diamond by chemical vapor deposition (CVD) is described. The method produces diamond of high purity and high crystallizability having various uses at low cost and at high speed. In a first method, a mixture of oxygen gas and a carbon-containing compound gas, and optionally an inert gas, is introduced into a reaction vessel. In a second method, a mixture containing at least one of fluorine gas, chlorine gas, a nitrogen oxide gas, sulfur dioxide, an aforementioned mixture of oxygen gas and a carbon-containing compound gas, or a mixture thereof with an inert gas is introduced into the reaction vessel. A plasma is generated by use of an electromagnetic field, thereby producing diamond on a base material placed in the vessel.
摘要翻译：描述了通过化学气相沉积（CVD）合成金刚石的方法。该方法以低成本和高速度生产具有各种用途的高纯度和高结晶度的金刚石。在第一种方法中，将氧气和含碳化合物气体以及任选的惰性气体的混合物引入反应容器中。在第二种方法中，引入含有氟气，氯气，氮氧化物气体，二氧化硫，上述氧气和含碳化合物气体的混合物或其与惰性气体的混合物中的至少一种的混合物进入反应容器。通过使用电磁场产生等离子体，从而在放置在容器中的基底材料上产生金刚石。

2. 发明授权

US5270028A Diamond and its preparation by chemical vapor deposition method 失效
标题翻译：金刚石及其化学气相沉积法制备
公开(公告)号：US5270028A
公开(公告)日：1993-12-14
申请号：US884891
申请日：1992-05-18
申请人： Keiichiro Tanabe , Takahiro Imai , Naoji Fujimori
发明人： Keiichiro Tanabe , Takahiro Imai , Naoji Fujimori
IPC分类号： C23C16/27 , C30B25/10 , C01B31/06
CPC分类号： C23C16/272 , C23C16/274 , C23C16/277 , C30B25/105
摘要： A diamond having improved properties is produced by a method which comprises introducing a mixture of hydrogen (A), an inert gas (B) and a carbon-containing compound (C) in molar ratios which satisfy the following equations: ##EQU1## generating a low temperature plasma with one of direct current and an alternating current electromagnetic field under pressure of 5 to 760 Torr to form the diamond on a substrate, wherein there is no substantial differnce between a place where the plasma is generated and a place where the diamond is formed on the substrate.
摘要翻译：通过包括以满足以下等式的摩尔比引入氢（A），惰性气体（B）和含碳化合物（C）的混合物的方法制备具有改进性能的金刚石： IMAGE>产生一个低压等离子体，其中一个直流电流和一个交流电流场在5到760乇的压力下形成金刚石在衬底上，其中在产生等离子体的地方和一个地方之间没有实质性的差异其中金刚石形成在基底上。

3. 发明授权

US5380516A Process for synthesizing diamond in a vapor phase 失效
标题翻译：在气相中合成金刚石的方法
公开(公告)号：US5380516A
公开(公告)日：1995-01-10
申请号：US931494
申请日：1992-08-21
申请人： Keiichiro Tanabe , Takahiro Imai , Naoji Fujimori
发明人： Keiichiro Tanabe , Takahiro Imai , Naoji Fujimori
IPC分类号： C23C16/27 , C30B25/02 , C01B31/65
CPC分类号： C23C16/27 , C23C16/277 , C30B25/02 , C30B29/04
摘要： The present invention relates to a method for synthesizing diamond by chemical vapor deposition (CVD) process, and specifically a chemical deposition process which allows production of diamond of high purity and high crystallizability having various uses at low cost and at high speed. In the first method for the present invention, a mixture of oxygen gas and a carbon-containing compound gas and optionally an inert gas is introduced into a reaction vessel and a plasma is generated by use of an electromagnetic field, thereby producing diamond on a substrate placed in the vessel. In the second method of the present invention, a mixture containing at least one of fluorine gas, chlorine gas, a nitrogen oxide gas and sulfur dioxide gas, or a mixture of the gas mixture with oxygen gas and a carbon-containing compound gas, or a mixture thereof with an inert gas is introduced into a reaction vessel, and a plasma is generated by use of an electromagnetic field, thereby producing diamond on a base material placed in the vessel.
摘要翻译： PCT No.PCT / JP89 / 00531 Sec。 371 1990年1月24日第 102（e）日期1990年1月24日PCT提交1989年5月25日PCT公布。出版物WO89 / 11556 日本特开1989年1月30日。本发明涉及通过化学气相沉积（CVD）方法合成金刚石的方法，具体地说涉及一种化学沉积方法，该方法允许以低成本生产具有各种用途的高纯度和高结晶度的金刚石，高速在本发明的第一种方法中，将氧气和含碳化合物气体和任选的惰性气体的混合物引入反应容器中，并且通过使用电磁场产生等离子体，由此在衬底上产生金刚石放在船上在本发明的第二种方法中，含有氟气，氯气，氮氧化物气体和二氧化硫气体中的至少一种的混合物，或气体混合物与氧气和含碳化合物气体的混合物，或将其与惰性气体的混合物引入反应容器中，并且通过使用电磁场产生等离子体，从而在放置在容器中的基材上产生金刚石。

4. 发明授权

US06193585B1 Method of polishing a hard material-coated wafer 失效
标题翻译：抛光硬质材料涂层晶片的方法
公开(公告)号：US06193585B1
公开(公告)日：2001-02-27
申请号：US09048291
申请日：1998-03-26
申请人： Keiichiro Tanabe , Akihoko Ikegaya , Yuichiro Seki , Naoji Fujimori
发明人： Keiichiro Tanabe , Akihoko Ikegaya , Yuichiro Seki , Naoji Fujimori
IPC分类号： B24B100
CPC分类号： C23C16/56 , B24B37/04 , B24B37/042 , B24B37/107 , B24B37/30 , C23C16/27 , H01L21/02024 , H01L21/30625 , Y10T428/24355 , Y10T428/24975 , Y10T428/30
摘要： A method of producing and polishing a hard-material-coated wafer. A hard-material film is disposed on a substrate to form the wafer and provide the wafer with a convex shape. A surface of the substrate is fixed on a holder of a polishing machine having a whetstone turn-table. The holder is rotated about its axis, and the whetstone turn-table is revolved about its shaft. The convex film surface of the hard-material film is polished on the whetstone turn-table while the inclination angle of the holder relative to the turn-table is changed. In this way, the convex film surface is polished either from its center to its periphery or from its periphery to its center.
摘要翻译：一种生产和抛光硬质材料涂层晶片的方法。将硬质材料膜设置在基板上以形成晶片并为晶片提供凸形。基板的表面固定在具有砂轮转台的抛光机的支架上。保持器围绕其轴线旋转，并且砂轮转台围绕其轴旋转。在砂轮转台上抛光硬质材料膜的凸形膜表面，同时保持器相对于转台的倾斜角度改变。以这种方式，凸面膜表面从其中心到其周边或从其周边到其中心被抛光。

5. 发明授权

US5776552A Process for the vapor phase synthesis of diamond and highly crystalline diamond 失效
标题翻译：气相合成金刚石和高结晶金刚石的工艺
公开(公告)号：US5776552A
公开(公告)日：1998-07-07
申请号：US401291
申请日：1995-03-09
申请人： Keiichiro Tanabe , Naoji Fujimori
发明人： Keiichiro Tanabe , Naoji Fujimori
IPC分类号： C30B29/04 , C23C16/27 , C30B25/10 , H05H1/24
CPC分类号： C23C16/27 , C23C16/272 , C23C16/274 , C23C16/276 , C23C16/277 , C30B25/105
摘要： High quality diamond excellent in crystalline property as well as transparency, can be synthesized at a high growth speed by a process which comprises using, as a raw material gas, a mixed gas of hydrogen gas A, an inert gas B, a carbon atom-containing gas C and an oxygen atom-containing inorganic gas D in such a proportion as satisfying the following relationship by mole ratio: 0.001.ltoreq.B/(A+B+C+D).ltoreq.0.95 0.001.ltoreq.C/(A+B+C+D).ltoreq.0.1 0.0005.ltoreq.D/C.ltoreq.10 except that the carbon atom-containing gas C and the oxygen atom-containing inorganic gas D, cannot simultaneously be the same gas feeding the mixed gas into a reactor in which plasma is then formed by applying a DC or AC electric field at a pressure of 10 to 760 torr and thereby depositing and forming diamond on a substrate arranged in the reactor.
摘要翻译：优异的结晶性和透明性的金刚石可以通过以氢气A，惰性气体B，碳原子数为1的气体作为原料气体的原料气体的制造方法以高生长速度合成，含有气体C和含氧原子的无机气体D的摩尔比满足以下关系：0.001

6. 发明授权

US5556464A Vibration plate of a speaker and method for producing same 失效
标题翻译：扬声器的振动板及其制造方法
公开(公告)号：US5556464A
公开(公告)日：1996-09-17
申请号：US387110
申请日：1995-02-10
申请人： Keiichiro Tanabe , Naoji Fujimori
发明人： Keiichiro Tanabe , Naoji Fujimori
IPC分类号： H04R7/02 , H04R7/12 , H04R31/00 , C30B29/04
CPC分类号： H04R7/02 , H04R31/003 , H04R2207/021 , H04R7/127 , Y10T428/30
摘要： The present invention relates to a diamond vibration plate for a speaker having high sound velocity or E/.rho. and which is superior in high-pitched tone performance. Conventional diamond vibration plates which are made overall from crystalline diamond were apt to split or break at a flange due to the high rigidity. According to the present invention periphery of the flange is circularly cut by laser beams to eliminate rugged circumference. The laser treatment also converts the crystalline diamond of the flange into non-diamond carbon. The resulting vibration plate with a central spherical part of crystalline diamond and a periphery of a flange of non-diamond carbon excels both in high frequency property and mechanical strength.
摘要翻译：本发明涉及具有高声速或E / rho的扬声器用金刚石振动板，其高音调性能优异。由结晶金刚石整体制成的常规金刚石振动板由于刚度高而容易在法兰上分裂或断裂。根据本发明，凸缘的圆周由激光束圆形切割以消除凹凸的圆周。激光处理也将法兰的结晶金刚石转化为非金刚石碳。所得到的具有晶体金刚石的中心球形部分和非金刚石碳化物凸缘的圆周的振动板在高频特性和机械强度方面均优异。

7. 发明授权

US5432004A Vibration plate of a speaker and method for producing same 失效
标题翻译：扬声器的振动板及其制造方法
公开(公告)号：US5432004A
公开(公告)日：1995-07-11
申请号：US91689
申请日：1993-07-15
申请人： Keiichiro Tanabe , Naoji Fujimori
发明人： Keiichiro Tanabe , Naoji Fujimori
IPC分类号： H04R7/02 , H04R7/12 , H04R31/00 , B32B9/00
CPC分类号： H04R7/02 , H04R31/003 , H04R2207/021 , H04R7/127 , Y10T428/30
摘要： The present invention relates to a diamond vibration plate for a speaker having high sound velocity or E/.rho. and which is superior in high-pitched tone performance. Conventional, diamond vibration plates which are made overall from crystalline diamond were apt to split or break at a flange due to the high rigidity. According to the present invention periphery of the flange is circularly cut by laser beams to eliminate rugged circumference. The laser treatment also converts the crystalline diamond of the flange into non-diamond carbon. The resulting vibration plate with a central spherical part of crystalline diamond and a periphery of a flange of non-diamond carbon excels both in high frequency property and mechanical strength.
摘要翻译：本发明涉及具有高声速或E / rho的扬声器用金刚石振动板，其高音调性能优异。由结晶金刚石整体制成的传统的金刚石振动板由于刚度高而容易在法兰上分裂或断裂。根据本发明，凸缘的圆周由激光束圆形切割以消除凹凸的圆周。激光处理也将法兰的结晶金刚石转化为非金刚石碳。所得到的具有晶体金刚石的中心球形部分和非金刚石碳化物凸缘的圆周的振动板在高频特性和机械强度方面均优异。

8. 发明授权

US5370299A Bonding tool having diamond head and method of manufacturing the same 失效
标题翻译：具有金刚石头的接合工具及其制造方法
公开(公告)号：US5370299A
公开(公告)日：1994-12-06
申请号：US41545
申请日：1993-04-02
申请人： Keiichiro Tanabe , Toshiya Takahashi , Akihiko Ikegaya , Naoji Fujimori
发明人： Keiichiro Tanabe , Toshiya Takahashi , Akihiko Ikegaya , Naoji Fujimori
IPC分类号： B23K20/02 , C04B41/50 , C04B41/85 , H05K13/00 , H01L21/58
CPC分类号： C04B41/009 , B23K20/025 , C04B41/5002 , C04B41/85 , H01L24/79 , H05K13/003
摘要： A bonding tool has a head portion made essentially of vapor-deposited diamond, wherein a principal diamond crystal plane forming a head face is a (111) plane. Such a head face has high hardness and a good wear resistance. In order to improve the toughness of a bonding head which is mainly made of vapor-deposited diamond, a portion or ply forming the head face consists essentially of high-purity diamond, and another portion or ply supporting the head face consists essentially of low-purity diamond. The head face has a high rigidity, while the portion supporting the head face has a high toughness. In order to provide a bonding head portion which is mainly made of vapor-deposited diamond with electrical conductivity, a first portion or ply forming a head face consists essentially of polycrystalline diamond containing a relatively small amount of dopant, and another portion or ply supporting the first portion or ply contains a large amount of dopant. The head portion having electrical conductivity can be heated by energization. In a tool employing a coating containing vapor-deposited diamond as a bonding head portion, the coating is formed by a compound of a metal or ceramics and vapor-deposited diamond, in order to improve the strength of the coating and adhesion to a tool substrate.
摘要翻译：接合工具具有基本上由气相沉积金刚石制成的头部，其中形成头部面的主要金刚石晶体平面是（111）面。这种头面具有高硬度和良好的耐磨性。为了提高主要由气相沉积金刚石制成的接合头的韧性，形成头部面的部分或层基本上由高纯度的金刚石组成，并且支撑头部面的另一部分或层基本上由低熔点金刚石构成，纯度钻石。头部表面具有高刚性，而支撑头部面的部分具有高韧性。为了提供主要由具有导电性的气相沉积金刚石制成的接合头部分，形成头部面的第一部分或第一部分基本上由含有相对少量掺杂剂的多晶金刚石组成，另一部分或层叠支撑第一部分或第二部分含有大量的掺杂剂。可以通过通电来加热具有导电性的头部。在使用包含气相沉积金刚石作为粘合头部分的涂层的工具中，涂层由金属或陶瓷和气相沉积金刚石的化合物形成，以便提高涂层的强度和对工具基材的粘附。

9. 发明授权

US5964942A Wafer and method of producing same 失效
标题翻译：晶圆及其制造方法
公开(公告)号：US5964942A
公开(公告)日：1999-10-12
申请号：US494719
申请日：1995-06-26
申请人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Takashi Tsuno
发明人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Takashi Tsuno
IPC分类号： C30B25/02 , C30B29/04
CPC分类号： C30B25/02 , C30B29/04
摘要： No wide bulk diamond wafer exists at present. A wide diamond-coated wafer is proposed instead of the bulk diamond wafer. Diamond is heteroepitaxially deposited on a convex-distorted non-diamond single crystal substrate by a vapor phase deposition method. In an early step, a negative bias is applied to the substrate. In the case of a Si substrate, an intermediate layer of .beta.-SiC is first deposited on the Si substrate by supplying a low carbon concentration material gas. Then the carbon concentration is raised for making a diamond film. The convex-distorted wafer is stuck to a holder having a shaft which is capable of inclining to the holder. The wafer is pushed to a turn-table of a polishing machine. The convex diamond wafer can fully be polished by inclining the holder to the shaft. A wide distorted mirror wafer of diamond is produced. Fine wire patterns can be made on the diamond mirror wafer by the photolithography.
摘要翻译：目前没有宽的大块金刚石晶圆。提出了宽金刚石涂层的晶片代替块状金刚石晶片。通过气相沉积方法将金刚石异质外延沉积在凸变形的非金刚石单晶衬底上。在早期的步骤中，向衬底施加负偏压。在Si衬底的情况下，通过提供低碳浓度的材料气体，首先在Si衬底上沉积β-SiC的中间层。然后提高碳浓度以制备金刚石膜。凸起变形的晶片粘附到具有能够倾斜到保持器的轴的保持器上。将晶片推到抛光机的转台上。通过将支架倾斜到轴上，可以完全抛光凸面金刚石晶片。产生了一个宽扭曲的金刚石镜面晶圆。可以通过光刻在金刚石镜晶片上形成细线图案。

10. 发明授权

US5874130A Wafer and method of producing a wafer 失效
标题翻译：晶片及其制造方法
公开(公告)号：US5874130A
公开(公告)日：1999-02-23
申请号：US942294
申请日：1997-10-01
申请人： Keiichiro Tanabe , Yuichiro Seki , Naoji Fujimori
发明人： Keiichiro Tanabe , Yuichiro Seki , Naoji Fujimori
IPC分类号： C23C16/27 , C23C16/44 , C30B25/02 , C30B25/10 , C30B33/00 , H03H3/08 , H03H9/02 , H01L21/461 , B24B1/00 , C30B25/14
CPC分类号： C23C16/279 , C23C16/27 , C30B25/02 , C30B25/105 , C30B29/04 , C30B33/00 , H03H3/08 , H03H9/02582 , Y10T428/24479 , Y10T428/24521 , Y10T428/24612 , Y10T428/24628 , Y10T428/26 , Y10T428/265 , Y10T428/30
摘要： A diamond wafer including a substrate and a (111) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (111) oriented film is produced by supplying a lower carbon concentration gas and a higher carbon concentration gas alternately. The lower carbon concentration means 0% to 1% of the atomic ratio C/H. The higher carbon concentration means 1% to 8% of the atomic ratio C/H. More than 40% of layered defects are either parallel with or slanting at an angle less than 5 degrees to the surface. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.
摘要翻译：一种金刚石晶片，包括在用于制造表面声波器件，半导体器件或耐磨盘的衬底上生长的衬底和（111）取向的多晶金刚石膜。通过交替地供给低碳浓度气体和较高碳浓度的气体来制造（111）取向膜。低碳浓度是指原子比C / H的0〜1％。较高的碳浓度是指原子比C / H的1％至8％。超过40％的分层缺陷是以与表面小于5度的角度平行或倾斜。晶片单调失真，失真高度H满足2微米

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式