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    • 1. 发明授权
    • Grinding method for wafer
    • 晶圆研磨方法
    • US07677955B2
    • 2010-03-16
    • US12243483
    • 2008-10-01
    • Keiichi KajiyamaTakatoshi MasudaShinya WatanabeShigehiko AokiHirotoshi HoshikawaYoshikazu KobayashiSeiji HaradaSetsuo Yamamoto
    • Keiichi KajiyamaTakatoshi MasudaShinya WatanabeShigehiko AokiHirotoshi HoshikawaYoshikazu KobayashiSeiji HaradaSetsuo Yamamoto
    • B24B49/00
    • B24D7/18B24B1/00B24B7/228
    • A grinding method for a wafer having a plurality of devices on the front side, wherein the back side of the wafer is ground by a grinding wheel to suppress the motion of heavy metal in the wafer by a gettering effect and also to maintain the die strength of each device at about 1,000 MPa or more. The grinding wheel is composed of a frame and an abrasive member fixed to the free end of the frame. The abrasive member is produced by fixing diamond abrasive grains having a grain size of less than or equal to 1 μm with a vitrified bond. A protective member is attached to the front side of the wafer and the wafer is held on a chuck table in the condition where the protective member is in contact with the chuck table. The grinding wheel is rotated as rotating the chuck table to thereby grind the back side of the wafer by means of the abrasive member so that the average surface roughness of the back side of the wafer becomes less than or equal to 0.003 μm and the thickness of a strain layer remaining on the back side of the wafer becomes 0.05 μm.
    • 一种用于在前侧具有多个器件的晶片的研磨方法,其中晶片的背面通过砂轮研磨,以通过吸气效应抑制晶片中重金属的运动,并且还保持模具强度 的每个装置在约1000MPa或更大。 砂轮由固定在框架自由端的框架和研磨件构成。 研磨构件通过用玻璃化粘合剂固定具有小于或等于1μm的晶粒尺寸的金刚石磨粒来制造。 在保护构件与卡盘台接触的状态下,将保护构件安装在晶片的前侧,并将晶片保持在卡盘台上。 砂轮沿着卡盘台转动而旋转,从而通过研磨部件磨削晶片的背面,使得晶片背面的平均表面粗糙度小于或等于0.003μm,厚度为 残留在晶片背面的应变层为0.05μm。
    • 2. 发明申请
    • GRINDING METHOD FOR WAFER
    • 砂轮研磨方法
    • US20090098808A1
    • 2009-04-16
    • US12243483
    • 2008-10-01
    • Keiichi KajiyamaTakatoshi MasudaShinya WatanabeShigehiko AokiHirotoshi HoshikawaYoshikazu KobayashiSeiji HaradaSetsuo Yamamoto
    • Keiichi KajiyamaTakatoshi MasudaShinya WatanabeShigehiko AokiHirotoshi HoshikawaYoshikazu KobayashiSeiji HaradaSetsuo Yamamoto
    • B24B1/00B24B7/00
    • B24D7/18B24B1/00B24B7/228
    • A grinding method for a wafer having a plurality of devices on the front side, wherein the back side of the wafer is ground by a grinding wheel to suppress the motion of heavy metal in the wafer by a gettering effect and also to maintain the die strength of each device at about 1,000 MPa or more. The grinding wheel is composed of a frame and an abrasive member fixed to the free end of the frame. The abrasive member is produced by fixing diamond abrasive grains having a grain size of less than or equal to 1 μm with a vitrified bond. A protective member is attached to the front side of the wafer and the wafer is held on a chuck table in the condition where the protective member is in contact with the chuck table. The grinding wheel is rotated as rotating the chuck table to thereby grind the back side of the wafer by means of the abrasive member so that the average surface roughness of the back side of the wafer becomes less than or equal to 0.003 μm and the thickness of a strain layer remaining on the back side of the wafer becomes 0.05 μm.
    • 一种用于在前侧具有多个器件的晶片的研磨方法,其中晶片的背面通过砂轮研磨,以通过吸气效应抑制晶片中重金属的运动,并且还保持模具强度 的每个装置在约1000MPa或更大。 砂轮由固定在框架自由端的框架和研磨件构成。 研磨部件通过将具有小于或等于1μm的粒度的金刚石磨粒与玻璃化粘合固定而制成。 在保护构件与卡盘台接触的状态下,将保护构件安装在晶片的前侧,并将晶片保持在卡盘台上。 砂轮以旋转卡盘台的方式旋转,从而通过研磨部件磨削晶片的背面,使得晶片背面的平均表面粗糙度小于或等于0.003μm,厚度为 残留在晶片背面的应变层为0.05μm。
    • 3. 发明授权
    • Method of grinding wafer
    • 研磨晶圆的方法
    • US08025556B2
    • 2011-09-27
    • US12349770
    • 2009-01-07
    • Keiichi KajiyamaTakatoshi MasudaShinya WatanabeSetsuo Yamamoto
    • Keiichi KajiyamaTakatoshi MasudaShinya WatanabeSetsuo Yamamoto
    • B24B1/00
    • B24B37/042B24B27/0076
    • A method of grinding a wafer, including: a wafer holding step for holding a wafer on a conical holding surface of a chuck table having the holding surface; a rough grinding step for performing rough grinding of the wafer held on the holding surface of the chuck table by positioning a grinding surface of a rough grinding wheel at a predetermined inclination angle relative to the holding surface of said chuck table, and rotating the rough grinding wheel; and a finish grinding step for performing finish grinding of the wafer by positioning a grinding surface of a finish grinding wheel in parallel to the holding surface of the chuck table, and rotating the finish grinding wheel in a grinding region of the grinding wheel in a direction toward the vertex of the contact angle between the grinding surface of the finish grinding wheel and the surface to be ground of the wafer.
    • 一种研磨晶片的方法,包括:晶片保持步骤,用于将晶片保持在具有保持表面的卡盘台的锥形保持表面上; 通过将粗磨轮的研磨面相对于所述夹盘的保持面定位成预定的倾斜角度,对保持在卡盘台的保持面上的晶片进行粗磨,粗磨加工, 轮; 以及精磨步骤,通过将精磨轮的研磨面与夹盘的保持面平行地定位,使精磨砂轮在砂轮的研磨区域中沿着方向 朝向精磨轮的磨削表面与待研磨的表面之间的接触角的顶点。
    • 4. 发明申请
    • METHOD OF GRINDING WAFER
    • 研磨方法
    • US20090186562A1
    • 2009-07-23
    • US12349770
    • 2009-01-07
    • Keiichi KajiyamaTakatoshi MasudaShinya WatanabeSetsuo Yamamoto
    • Keiichi KajiyamaTakatoshi MasudaShinya WatanabeSetsuo Yamamoto
    • B24B1/00
    • B24B37/042B24B27/0076
    • A method of grinding a wafer, including: a wafer holding step for holding a wafer on a conical holding surface of a chuck table having the holding surface; a rough grinding step for performing rough grinding of the wafer held on the holding surface of the chuck table by positioning a grinding surface of a rough grinding wheel at a predetermined inclination angle relative to the holding surface of said chuck table, and rotating the rough grinding wheel; and a finish grinding step for performing finish grinding of the wafer by positioning a grinding surface of a finish grinding wheel in parallel to the holding surface of the chuck table, and rotating the finish grinding wheel in a grinding region of the grinding wheel in a direction toward the vertex of the contact angle between the grinding surface of the finish grinding wheel and the surface to be ground of the wafer.
    • 一种研磨晶片的方法,包括:晶片保持步骤,用于将晶片保持在具有保持表面的卡盘台的锥形保持表面上; 通过将粗磨轮的研磨面相对于所述夹盘的保持面定位成预定的倾斜角度,对保持在卡盘台的保持面上的晶片进行粗磨,粗磨加工, 轮; 以及精磨步骤,通过将精磨轮的研磨面与夹盘的保持面平行地定位,使精磨砂轮在砂轮的研磨区域中沿着方向 朝向精磨轮的磨削表面与待研磨的表面之间的接触角的顶点。
    • 5. 发明授权
    • Magnetic recording medium and process for producing the same
    • 磁记录介质及其制造方法
    • US06221519B1
    • 2001-04-24
    • US09272622
    • 1999-03-19
    • Takanori DoiKousaku TamariYasuo KakiharaKenichi NakataMitsuru MatsuuraSetsuo Yamamoto
    • Takanori DoiKousaku TamariYasuo KakiharaKenichi NakataMitsuru MatsuuraSetsuo Yamamoto
    • G11B566
    • G11B5/7325G11B5/656G11B5/84G11B5/8404Y10S428/90
    • A magnetic recording medium comprising: a plastic substrate; a nickel oxide underlayer formed on said substrate; and a cobalt-containing maghemite thin film formed on said nickel oxide underlayer, containing cobalt at a molar ratio of cobalt to iron of 0.01:1 to 0.1:1, and having either a spacing of a plane (311) of not more than 2.510 Å, a spacing of a plane (222) of not more than 2.415 Å or a spacing of a plane (220) of not more than 2.950 Å, a ratio value of an X-ray diffraction pattern peak intensity of either of the planes (311), (222) and (220) of said cobalt-containing maghemite thin film to an X-ray diffraction pattern peak intensity of the plane (400) thereof being more than 0.5. Such magnetic recording medium suitably applicable to existent magnetic recording systems using a ring-type magnetic head and capable of using a plastic substrate for providing a magnetic recording medium for high-density recording.
    • 一种磁记录介质,包括:塑料基板;形成在所述基板上的氧化镍底层; 和在所述氧化镍底层上形成的含钴的磁赤铁矿薄膜,其含有钴与铁的摩尔比为0.01:1至0.1:1的钴,并且具有不大于2.510的平面(311)的间隔 ,平面(222)的间距不大于2.415或平面(220)的间距不大于2.950,任一平面(311)的X射线衍射图峰值强度的比值 ),所述含钴磁赤铁矿薄膜的(222)和(220)相对于所述平面(400)的X射线衍射图峰值强度大于0.5。 这种磁记录介质适用于使用环形磁头的现有磁记录系统,并能够使用塑料基板提供用于高密度记录的磁记录介质。
    • 10. 发明授权
    • Leakage inspection apparatus and leakage inspection method
    • 泄漏检查装置和泄漏检查方法
    • US09274021B2
    • 2016-03-01
    • US13808226
    • 2011-07-01
    • Setsuo YamamotoHiroki KurisuNaoki TakadaMitsugu NakagawaKatsushi TsugeYukihiro Ishikawa
    • Setsuo YamamotoHiroki KurisuNaoki TakadaMitsugu NakagawaKatsushi TsugeYukihiro Ishikawa
    • G01M3/20G01M3/22G01M3/32
    • G01M3/20G01M3/229G01M3/3281
    • Provided are a leakage inspection apparatus and a leakage inspection method for inspecting the flow rate of leakage from a tested body disposed in a tested-body chamber 21. The leakage inspection apparatus includes liquid supplying and pressurizing means 11 for supplying a probe liquid to the inside of the tested-body chamber 21 and pressurizing the probe liquid to a high pressure 0.1 MPa or more, vacuum evacuation means 22-b, 23-b and a quadrupole mass spectrometer 34. The tested body 21 is evacuated, the probe liquid is supplied to the inside of the tested body and pressurized to 0.1 MPa or more and the concentration of a probe medium leaked from the tested body and evaporated in a vacuum is measured by the quadrupole mass spectrometer 34, thereby measuring the flow rate of leakage from the tested body. This makes it possible to determine the flow rate of leakage using a liquid as a probe medium and simultaneously possible to perform a pressure tightness inspection at an atmospheric pressure of 0.1 MPa or more, especially at a high pressure ranging from 1 MPa to 1 GPa.
    • 提供了一种用于检查设置在被测体室21中的被测体的泄漏流量的泄漏检查装置和泄漏检查方法。泄漏检查装置包括用于向内部供给探针液的液体供给和加压装置11 的试验体室21,将探针液加压至高压0.1MPa以上的真空排气装置22-b,23-b和四极质谱仪34.将被检体21抽真空,供给探针液 到被测体的内部并加压到0.1MPa以上,并且通过四极质谱仪34测量从测试体泄漏并在真空中蒸发的探针介质的浓度,由此测量来自测试体的泄漏流量 身体。 这使得可以使用液体作为探针介质来确定泄漏流量,并且同时可以在大气压为0.1MPa以上,特别是在1MPa〜1GPa的高压下进行压力密封性检查。