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1. 发明授权

US06702898B2 Deposited film forming apparatus 失效
标题翻译：沉积成膜装置
公开(公告)号：US06702898B2
公开(公告)日：2004-03-09
申请号：US10046318
申请日：2002-01-16
申请人： Kazuto Hosoi , Toshiyasu Shirasuna , Kazuhiko Takada , Ryuji Okamura , Kazuyoshi Akiyama , Hitoshi Murayama
发明人： Kazuto Hosoi , Toshiyasu Shirasuna , Kazuhiko Takada , Ryuji Okamura , Kazuyoshi Akiyama , Hitoshi Murayama
IPC分类号： C23C1600
CPC分类号： H01J37/32623 , C23C16/509
摘要： For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposited film ready for volume production, particularly, a functional deposit film (for example, an amorphous semiconductor used for semiconductor devices, electrophotographic photosensitive members, photovoltaic devices, and so on) is formed in an apparatus including a reaction vessel which can be hermetically evacuated, a substrate holder in the reaction vessel, a source gas supply, a power supply for high-frequency power. An end covering member is provided at an end of each of the substrate holder, the source gas supply and the power supply.
摘要翻译：为了提高等离子体的均匀性和长期的稳定性，可以容易地形成具有优异的厚度和质量均匀性以及良好的重复性和抑制图像缺陷的发生的膜，并且大大地提高了产率以形成准备进行批量生产的沉积膜，特别是在包括能够被气密抽真空的反应容器的设备中形成功能性沉积膜（例如，用于半导体器件的非晶半导体，电子照相感光构件，光伏器件等），反应容器中的衬底保持器，源气源，高频电源。在每个基板保持器，源气体供应和电源的端部设置端盖部件。

2. 发明授权

US06946167B2 Deposited film forming apparatus and deposited film forming method 失效
标题翻译：沉积成膜装置和沉积膜形成方法
公开(公告)号：US06946167B2
公开(公告)日：2005-09-20
申请号：US10691514
申请日：2003-10-24
申请人： Kazuto Hosoi , Toshiyasu Shirasuna , Kazuhiko Takada , Ryuji Okamura , Kazuyoshi Akiyama , Hitoshi Murayama
发明人： Kazuto Hosoi , Toshiyasu Shirasuna , Kazuhiko Takada , Ryuji Okamura , Kazuyoshi Akiyama , Hitoshi Murayama
IPC分类号： G03G5/08 , C23C16/50 , C23C16/509 , H01J37/32 , H01L21/205 , C23C16/00
CPC分类号： H01J37/32623 , C23C16/509
摘要： For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposited film ready for volume production, particularly, a functional deposit film (for example, an amorphous semiconductor used for semiconductor devices, electrophotographic photosensitive members, photovoltaic devices, and so on) is formed in an apparatus including a reaction vessel which can be hermetically evacuated, a substrate holder in the reaction vessel, a source gas supply, a power supply for high-frequency power. An end covering member is provided at an end of each of the substrate holder, the source gas supply and the power supply.
摘要翻译：为了提高等离子体的均匀性和长期的稳定性，可以容易地形成具有优异的厚度和质量均匀性以及良好的重复性和抑制图像缺陷的发生的膜，并且大大地提高了产率以形成准备进行批量生产的沉积膜，特别是在包括能够被气密抽真空的反应容器的设备中形成功能性沉积膜（例如，用于半导体器件的非晶半导体，电子照相感光构件，光伏器件等），反应容器中的衬底保持器，源气源，高频电源。在每个基板保持器，源气体供应和电源的端部设置端盖部件。

3. 发明授权

US06347601B1 Film forming apparatus 有权
标题翻译：成膜装置
公开(公告)号：US06347601B1
公开(公告)日：2002-02-19
申请号：US09219724
申请日：1998-12-23
申请人： Kazuto Hosoi , Toshiyasu Shirasuna , Kazuhiko Takada , Ryuji Okamura , Kazuyoshi Akiyama , Hitoshi Murayama
发明人： Kazuto Hosoi , Toshiyasu Shirasuna , Kazuhiko Takada , Ryuji Okamura , Kazuyoshi Akiyama , Hitoshi Murayama
IPC分类号： C23C1650
CPC分类号： H01J37/32623 , C23C16/509
摘要： For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposited film ready for volume production, particularly, a functional deposit film (for example, an amorphous semiconductor used for semiconductor devices, electrophotographic photosensitive members, photovoltaic devices, and so on) is formed in an apparatus including a reaction vessel which can be hermetically evacuated, a substrate holder in the reaction vessel, a source gas supply, a power supply for high-frequency power. An end covering member is provided at an end of each of the substrate holder, the source gas supply and the power supply.
摘要翻译：为了提高等离子体的均匀性和长期的稳定性，可以容易地形成具有优异的厚度和质量均匀性以及良好的重复性和抑制图像缺陷的发生的膜，并且大大地提高了产率以形成准备进行批量生产的沉积膜，特别是在包括能够被气密抽真空的反应容器的设备中形成功能性沉积膜（例如，用于半导体器件的非晶半导体，电子照相感光构件，光伏器件等），反应容器中的衬底保持器，源气源，高频电源。在每个基板保持器，源气体供应和电源的端部设置端盖部件。

4. 发明授权

US06321759B1 Method for cleaning a substrate 失效
标题翻译：清洗基材的方法
公开(公告)号：US06321759B1
公开(公告)日：2001-11-27
申请号：US09218086
申请日：1998-12-22
申请人： Ryuji Okamura , Toshiyasu Shirasuna , Kazuhiko Takada , Kazuyoshi Akiyama , Hitoshi Murayama , Kazuto Hosoi
发明人： Ryuji Okamura , Toshiyasu Shirasuna , Kazuhiko Takada , Kazuyoshi Akiyama , Hitoshi Murayama , Kazuto Hosoi
IPC分类号： B08B302
CPC分类号： B08B9/023 , B08B3/024 , B08B2203/0217
摘要： A cleaning method for an electrophotographic photosensitive member that eliminate corrosion and cleaning irregularities of a substrate during cleaning, and a method of producing an electrophotographic photosensitive member which is easy to operate and capable of stably forming the photosensitive member at a low cost, in a high yield, and at a high speed. The cleaning method is a water-based cleaning method of cleaning a cylindrical substrate for an electrophotographic photosensitive member, using at least one selected from the group consisting of pure water, pure water having dissolved carbon dioxide, and pure water containing a surface active agent, wherein the cylindrical substrate is cleaned by a cleaning liquid ejected from a plurality of nozzles, and wherein those surfaces of the cleaning liquid ejected from the respective nozzles which are in contact with a surface of the cylindrical substrate do not interfere with each other, and the cleaning apparatus is arranged to carry out the cleaning method.
摘要翻译：一种电子照相感光构件的清洁方法，其在清洁期间消除基板的腐蚀和清洁不规则性，以及制造易于操作并能够以低成本稳定地形成感光构件的电子照相感光构件的制造方法，产量和高速度。清洗方法是使用选自纯水，溶解二氧化碳的纯水和含有表面活性剂的纯水中的至少一种来清洁电子照相感光构件用圆筒状基材的水性清洗方法，其特征在于，所述筒状基板由从多个喷嘴喷出的清洗液体进行清洗，其特征在于，与所述圆筒状基板的表面接触的各喷嘴喷出的所述清洗液的表面不会相互干涉，清洁装置被布置成执行清洁方法。

5. 发明授权

US06350497B1 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US06350497B1
公开(公告)日：2002-02-26
申请号：US09616989
申请日：2000-07-14
申请人： Hitoshi Murayama , Toshiyasu Shirasuna , Ryuji Okamura , Kazuyoshi Akiyama , Takashi Ohtsuka , Kazuto Hosoi
发明人： Hitoshi Murayama , Toshiyasu Shirasuna , Ryuji Okamura , Kazuyoshi Akiyama , Takashi Ohtsuka , Kazuto Hosoi
IPC分类号： H05H124
CPC分类号： H01J37/32082 , C23C16/4588 , C23C16/509 , H01J37/32532 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： For permitting increase in productivity and improvement in uniformity and reproducibility of characteristics of deposited films while maintaining good film characteristics, a plasma processing apparatus is constructed in such structure that a plurality of cylindrical substrates are set in a depressurizable reaction vessel and that a source gas supplied into the reaction vessel is decomposed by a high frequency power introduced from a high frequency power introducing means to generate a plasma to permit deposited film formation, etching, or surface modification on the cylindrical substrates, wherein the plurality of cylindrical substrates are placed at equal intervals on the same circumference and wherein the high frequency power introducing means is provided outside the placing circumference for the cylindrical substrates.
摘要翻译：为了在保持良好的膜特性的同时提高生产率和提高沉积膜的特性的均匀性和再现性，等离子体处理装置被构造成使得多个圆柱形基板被设置在可降压反应容器中并且提供源气体通过从高频功率引入装置引入的高频功率分解到反应容器中以产生等离子体以允许在圆柱形基板上沉积膜形成，蚀刻或表面改性，其中多个圆柱形基板以等间隔放置并且其中高频功率引入装置设置在用于圆柱形基板的放置圆周的外侧。

6. 发明授权

US6155201A Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US6155201A
公开(公告)日：2000-12-05
申请号：US157933
申请日：1998-09-22
申请人： Hitoshi Murayama , Toshiyasu Shirasuna , Ryuji Okamura , Kazuyoshi Akiyama , Takashi Ohtsuka , Kazuto Hosoi
发明人： Hitoshi Murayama , Toshiyasu Shirasuna , Ryuji Okamura , Kazuyoshi Akiyama , Takashi Ohtsuka , Kazuto Hosoi
IPC分类号： G03G5/08 , C23C16/00 , C23C16/458 , C23C16/509 , H01J37/32 , H01L21/205 , H01L21/285 , H01L31/20
CPC分类号： H01J37/32082 , C23C16/4588 , C23C16/509 , H01J37/32532 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： For permitting increase in productivity and improvement in uniformity and reproducibility of characteristics of deposited films while maintaining good film characteristics, a plasma processing apparatus is constructed in such structure that a plurality of cylindrical substrates are set in a depressurizable reaction vessel and that a source gas supplied into the reaction vessel is decomposed by a high frequency power introduced from a high frequency power introducing means to generate a plasma to permit deposited film formation, etching, or surface modification on the cylindrical substrates, wherein the plurality of cylindrical substrates are placed at equal intervals on the same circumference and wherein the high frequency power introducing means is provided outside the placing circumference for the cylindrical substrates.
摘要翻译：为了在保持良好的膜特性的同时提高生产率和提高沉积膜的特性的均匀性和再现性，等离子体处理装置被构造成使得多个圆柱形基板被设置在可降压反应容器中并且提供源气体通过从高频功率引入装置引入的高频功率分解到反应容器中以产生等离子体以允许在圆柱形基板上沉积膜形成，蚀刻或表面改性，其中多个圆柱形基板以等间隔放置并且其中高频功率引入装置设置在用于圆柱形基板的放置圆周的外侧。

7. 发明授权

US06300225B1 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US06300225B1
公开(公告)日：2001-10-09
申请号：US09270211
申请日：1999-03-15
申请人： Ryuji Okamura , Tatsuyuki Aoike , Toshiyasu Shirasuna , Kazuhiko Takada , Kazuyoshi Akiyama , Hitoshi Murayama
发明人： Ryuji Okamura , Tatsuyuki Aoike , Toshiyasu Shirasuna , Kazuhiko Takada , Kazuyoshi Akiyama , Hitoshi Murayama
IPC分类号： H01L2136
CPC分类号： H01J37/32733 , C23C16/509 , C23C16/54 , H01J2237/2001 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A plasma processing method comprising the steps of arranging a substrate on a film is to be formed in a reaction chamber capable of being vacuumed and evacuating the inside of the reaction chamber in a loading stage; and separating the reaction chamber from the loading stage and joining the reaction chamber to a treating stage where the substrate arranged in the reaction chamber is subjected to plasma processing, wherein the reaction chamber is moved on a track to join to the treating stage, where a high frequency power supply system, a processing gas supply system and an exhaustion system are joined to the reaction chamber, whereby plasma is produced in the reaction chamber to conduct plasma processing on the substrate. An apparatus suitable for practicing said plasma processing method.
摘要翻译：将等离子体处理方法包括以下步骤：在能够被抽真空的反应室中形成在膜上的基板，并在装载阶段抽空反应室的内部; 并且将反应室与装载阶段分离并将反应室连接到处理阶段，其中布置在反应室中的基板经受等离子体处理，其中反应室在轨道上移动以连接到处理台，其中高频电源系统，处理气体供给系统和耗尽系统连接到反应室，由此在反应室中产生等离子体以在衬底上进行等离子体处理。适于实施所述等离子体处理方法的装置。

8. 发明授权

US6165274A Plasma processing apparatus and method 失效
标题翻译：等离子体处理装置及方法
公开(公告)号：US6165274A
公开(公告)日：2000-12-26
申请号：US184044
申请日：1998-11-02
申请人： Kazuyoshi Akiyama , Tatsuyuki Aoike , Toshiyasu Shirasuna , Kazuhiko Takada , Ryuji Okamura , Hitoshi Murayama
发明人： Kazuyoshi Akiyama , Tatsuyuki Aoike , Toshiyasu Shirasuna , Kazuhiko Takada , Ryuji Okamura , Hitoshi Murayama
IPC分类号： G03G5/08 , C23C16/44 , C23C16/50 , C23C16/509 , H01J37/32 , H01L21/205 , H01L31/04 , C23C16/00
CPC分类号： H01J37/32082 , C23C16/509 , H01J37/32724
摘要： A plasma processing apparatus for plasma-processing a substrate arranged in a reaction chamber using a high frequency power supplied by a high frequency power introduction means, wherein said high frequency power introduction means comprises a cathode electrode and a conductor portion capable of transmitting a high frequency power to said cathode electrode, said conductor portion being penetrated a wall of said reaction chamber while said conductor portion being electrically isolated from said wall of said reaction chamber by means of an insulating material, at least a part of said insulating material comprising a porous ceramic material, wherein a fluid is introduced through said porous ceramic material to control the temperature of said cathode electrode and/or that of said conductor portion.
摘要翻译：一种等离子体处理装置，用于使用由高频功率引入装置提供的高频功率等离子体处理布置在反应室中的基板，其中所述高频功率引入装置包括阴极电极和能够传输高频功率的导体部分所述导体部分穿过所述反应室的壁，而所述导体部分通过绝缘材料与所述反应室的所述壁电隔离，所述绝缘材料的至少一部分包括多孔陶瓷材料，其中通过所述多孔陶瓷材料引入流体以控制所述阴极电极和/或所述导体部分的温度。

9. 发明授权

US6148763A Deposited film forming apparatus 失效
标题翻译：沉积成膜装置
公开(公告)号：US6148763A
公开(公告)日：2000-11-21
申请号：US182002
申请日：1998-10-29
申请人： Kazuyoshi Akiyama , Toshiyasu Shirasuna , Kazuhiko Takada , Ryuji Okamura , Hitoshi Murayama
发明人： Kazuyoshi Akiyama , Toshiyasu Shirasuna , Kazuhiko Takada , Ryuji Okamura , Hitoshi Murayama
IPC分类号： G03G5/08 , C23C16/44 , C23C16/50 , H01L21/205 , H01L31/04 , C23C16/00
CPC分类号： C23C16/4404
摘要： In a deposited film forming apparatus, at least part of the inner wall surfaces of a reactor or surfaces of structural component parts on which films are deposited is constituted of a porous ceramic material. This can prevent film come-off of deposited films on inner walls and structural component parts of the reactor as far as possible so that the spherical protuberances can be prevented from occurring and electrophotographic photosensitive members having a superior quality can be formed.
摘要翻译：在沉积膜形成装置中，反应器的内壁表面的至少一部分或其上沉积膜的结构部件的表面由多孔陶瓷材料构成。这可以防止薄膜在反应器的内壁和结构部件上尽可能地脱落，从而可以防止发生球形突起，并且可以形成具有优良品质的电子照相感光构件。

10. 发明授权

US06649020B1 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06649020B1
公开(公告)日：2003-11-18
申请号：US09897961
申请日：2001-07-05
申请人： Ryuji Okamura , Tatsuyuki Aoike , Toshiyasu Shirasuna , Kazuhiko Takada , Kazuyoshi Akiyama , Hitoshi Murayama
发明人： Ryuji Okamura , Tatsuyuki Aoike , Toshiyasu Shirasuna , Kazuhiko Takada , Kazuyoshi Akiyama , Hitoshi Murayama
IPC分类号： C23C1600
CPC分类号： H01J37/32733 , C23C16/509 , C23C16/54 , H01J2237/2001 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A plasma processing method comprising the steps of arranging a substrate on a film is to be formed in a reaction chamber capable of being vacuumed and evacuating the inside of the reaction chamber in a loading stage; and separating the reaction chamber from the loading stage and joining the reaction chamber to a treating stage where the substrate arranged in the reaction chamber is subjected to plasma processing, wherein the reaction chamber is moved on a track to join to the treating stage, where a high frequency power supply system, a processing gas supply system and an exhaustion system are joined to the reaction chamber, whereby plasma is produced in the reaction chamber to conduct plasma processing on the substrate. An apparatus suitable for practicing said plasma processing method.
摘要翻译：将等离子体处理方法包括以下步骤：在能够被抽真空的反应室中形成在膜上的基板，并在装载阶段抽空反应室的内部; 并且将反应室与装载阶段分离并将反应室连接到处理阶段，其中布置在反应室中的基板经受等离子体处理，其中反应室在轨道上移动以连接到处理台，其中高频电源系统，处理气体供给系统和耗尽系统连接到反应室，由此在反应室中产生等离子体以在衬底上进行等离子体处理。适于实施所述等离子体处理方法的装置。

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