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1. 发明授权

US06300225B1 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US06300225B1
公开(公告)日：2001-10-09
申请号：US09270211
申请日：1999-03-15
申请人： Ryuji Okamura , Tatsuyuki Aoike , Toshiyasu Shirasuna , Kazuhiko Takada , Kazuyoshi Akiyama , Hitoshi Murayama
发明人： Ryuji Okamura , Tatsuyuki Aoike , Toshiyasu Shirasuna , Kazuhiko Takada , Kazuyoshi Akiyama , Hitoshi Murayama
IPC分类号： H01L2136
CPC分类号： H01J37/32733 , C23C16/509 , C23C16/54 , H01J2237/2001 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A plasma processing method comprising the steps of arranging a substrate on a film is to be formed in a reaction chamber capable of being vacuumed and evacuating the inside of the reaction chamber in a loading stage; and separating the reaction chamber from the loading stage and joining the reaction chamber to a treating stage where the substrate arranged in the reaction chamber is subjected to plasma processing, wherein the reaction chamber is moved on a track to join to the treating stage, where a high frequency power supply system, a processing gas supply system and an exhaustion system are joined to the reaction chamber, whereby plasma is produced in the reaction chamber to conduct plasma processing on the substrate. An apparatus suitable for practicing said plasma processing method.
摘要翻译：将等离子体处理方法包括以下步骤：在能够被抽真空的反应室中形成在膜上的基板，并在装载阶段抽空反应室的内部; 并且将反应室与装载阶段分离并将反应室连接到处理阶段，其中布置在反应室中的基板经受等离子体处理，其中反应室在轨道上移动以连接到处理台，其中高频电源系统，处理气体供给系统和耗尽系统连接到反应室，由此在反应室中产生等离子体以在衬底上进行等离子体处理。适于实施所述等离子体处理方法的装置。

2. 发明授权

US6165274A Plasma processing apparatus and method 失效
标题翻译：等离子体处理装置及方法
公开(公告)号：US6165274A
公开(公告)日：2000-12-26
申请号：US184044
申请日：1998-11-02
申请人： Kazuyoshi Akiyama , Tatsuyuki Aoike , Toshiyasu Shirasuna , Kazuhiko Takada , Ryuji Okamura , Hitoshi Murayama
发明人： Kazuyoshi Akiyama , Tatsuyuki Aoike , Toshiyasu Shirasuna , Kazuhiko Takada , Ryuji Okamura , Hitoshi Murayama
IPC分类号： G03G5/08 , C23C16/44 , C23C16/50 , C23C16/509 , H01J37/32 , H01L21/205 , H01L31/04 , C23C16/00
CPC分类号： H01J37/32082 , C23C16/509 , H01J37/32724
摘要： A plasma processing apparatus for plasma-processing a substrate arranged in a reaction chamber using a high frequency power supplied by a high frequency power introduction means, wherein said high frequency power introduction means comprises a cathode electrode and a conductor portion capable of transmitting a high frequency power to said cathode electrode, said conductor portion being penetrated a wall of said reaction chamber while said conductor portion being electrically isolated from said wall of said reaction chamber by means of an insulating material, at least a part of said insulating material comprising a porous ceramic material, wherein a fluid is introduced through said porous ceramic material to control the temperature of said cathode electrode and/or that of said conductor portion.
摘要翻译：一种等离子体处理装置，用于使用由高频功率引入装置提供的高频功率等离子体处理布置在反应室中的基板，其中所述高频功率引入装置包括阴极电极和能够传输高频功率的导体部分所述导体部分穿过所述反应室的壁，而所述导体部分通过绝缘材料与所述反应室的所述壁电隔离，所述绝缘材料的至少一部分包括多孔陶瓷材料，其中通过所述多孔陶瓷材料引入流体以控制所述阴极电极和/或所述导体部分的温度。

3. 发明授权

US06649020B1 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06649020B1
公开(公告)日：2003-11-18
申请号：US09897961
申请日：2001-07-05
申请人： Ryuji Okamura , Tatsuyuki Aoike , Toshiyasu Shirasuna , Kazuhiko Takada , Kazuyoshi Akiyama , Hitoshi Murayama
发明人： Ryuji Okamura , Tatsuyuki Aoike , Toshiyasu Shirasuna , Kazuhiko Takada , Kazuyoshi Akiyama , Hitoshi Murayama
IPC分类号： C23C1600
CPC分类号： H01J37/32733 , C23C16/509 , C23C16/54 , H01J2237/2001 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A plasma processing method comprising the steps of arranging a substrate on a film is to be formed in a reaction chamber capable of being vacuumed and evacuating the inside of the reaction chamber in a loading stage; and separating the reaction chamber from the loading stage and joining the reaction chamber to a treating stage where the substrate arranged in the reaction chamber is subjected to plasma processing, wherein the reaction chamber is moved on a track to join to the treating stage, where a high frequency power supply system, a processing gas supply system and an exhaustion system are joined to the reaction chamber, whereby plasma is produced in the reaction chamber to conduct plasma processing on the substrate. An apparatus suitable for practicing said plasma processing method.
摘要翻译：将等离子体处理方法包括以下步骤：在能够被抽真空的反应室中形成在膜上的基板，并在装载阶段抽空反应室的内部; 并且将反应室与装载阶段分离并将反应室连接到处理阶段，其中布置在反应室中的基板经受等离子体处理，其中反应室在轨道上移动以连接到处理台，其中高频电源系统，处理气体供给系统和耗尽系统连接到反应室，由此在反应室中产生等离子体以在衬底上进行等离子体处理。适于实施所述等离子体处理方法的装置。

4. 发明授权

US06702898B2 Deposited film forming apparatus 失效
标题翻译：沉积成膜装置
公开(公告)号：US06702898B2
公开(公告)日：2004-03-09
申请号：US10046318
申请日：2002-01-16
申请人： Kazuto Hosoi , Toshiyasu Shirasuna , Kazuhiko Takada , Ryuji Okamura , Kazuyoshi Akiyama , Hitoshi Murayama
发明人： Kazuto Hosoi , Toshiyasu Shirasuna , Kazuhiko Takada , Ryuji Okamura , Kazuyoshi Akiyama , Hitoshi Murayama
IPC分类号： C23C1600
CPC分类号： H01J37/32623 , C23C16/509
摘要： For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposited film ready for volume production, particularly, a functional deposit film (for example, an amorphous semiconductor used for semiconductor devices, electrophotographic photosensitive members, photovoltaic devices, and so on) is formed in an apparatus including a reaction vessel which can be hermetically evacuated, a substrate holder in the reaction vessel, a source gas supply, a power supply for high-frequency power. An end covering member is provided at an end of each of the substrate holder, the source gas supply and the power supply.
摘要翻译：为了提高等离子体的均匀性和长期的稳定性，可以容易地形成具有优异的厚度和质量均匀性以及良好的重复性和抑制图像缺陷的发生的膜，并且大大地提高了产率以形成准备进行批量生产的沉积膜，特别是在包括能够被气密抽真空的反应容器的设备中形成功能性沉积膜（例如，用于半导体器件的非晶半导体，电子照相感光构件，光伏器件等），反应容器中的衬底保持器，源气源，高频电源。在每个基板保持器，源气体供应和电源的端部设置端盖部件。

5. 发明授权

US06946167B2 Deposited film forming apparatus and deposited film forming method 失效
标题翻译：沉积成膜装置和沉积膜形成方法
公开(公告)号：US06946167B2
公开(公告)日：2005-09-20
申请号：US10691514
申请日：2003-10-24
申请人： Kazuto Hosoi , Toshiyasu Shirasuna , Kazuhiko Takada , Ryuji Okamura , Kazuyoshi Akiyama , Hitoshi Murayama
发明人： Kazuto Hosoi , Toshiyasu Shirasuna , Kazuhiko Takada , Ryuji Okamura , Kazuyoshi Akiyama , Hitoshi Murayama
IPC分类号： G03G5/08 , C23C16/50 , C23C16/509 , H01J37/32 , H01L21/205 , C23C16/00
CPC分类号： H01J37/32623 , C23C16/509
摘要： For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposited film ready for volume production, particularly, a functional deposit film (for example, an amorphous semiconductor used for semiconductor devices, electrophotographic photosensitive members, photovoltaic devices, and so on) is formed in an apparatus including a reaction vessel which can be hermetically evacuated, a substrate holder in the reaction vessel, a source gas supply, a power supply for high-frequency power. An end covering member is provided at an end of each of the substrate holder, the source gas supply and the power supply.
摘要翻译：为了提高等离子体的均匀性和长期的稳定性，可以容易地形成具有优异的厚度和质量均匀性以及良好的重复性和抑制图像缺陷的发生的膜，并且大大地提高了产率以形成准备进行批量生产的沉积膜，特别是在包括能够被气密抽真空的反应容器的设备中形成功能性沉积膜（例如，用于半导体器件的非晶半导体，电子照相感光构件，光伏器件等），反应容器中的衬底保持器，源气源，高频电源。在每个基板保持器，源气体供应和电源的端部设置端盖部件。

6. 发明授权

US6148763A Deposited film forming apparatus 失效
标题翻译：沉积成膜装置
公开(公告)号：US6148763A
公开(公告)日：2000-11-21
申请号：US182002
申请日：1998-10-29
申请人： Kazuyoshi Akiyama , Toshiyasu Shirasuna , Kazuhiko Takada , Ryuji Okamura , Hitoshi Murayama
发明人： Kazuyoshi Akiyama , Toshiyasu Shirasuna , Kazuhiko Takada , Ryuji Okamura , Hitoshi Murayama
IPC分类号： G03G5/08 , C23C16/44 , C23C16/50 , H01L21/205 , H01L31/04 , C23C16/00
CPC分类号： C23C16/4404
摘要： In a deposited film forming apparatus, at least part of the inner wall surfaces of a reactor or surfaces of structural component parts on which films are deposited is constituted of a porous ceramic material. This can prevent film come-off of deposited films on inner walls and structural component parts of the reactor as far as possible so that the spherical protuberances can be prevented from occurring and electrophotographic photosensitive members having a superior quality can be formed.
摘要翻译：在沉积膜形成装置中，反应器的内壁表面的至少一部分或其上沉积膜的结构部件的表面由多孔陶瓷材料构成。这可以防止薄膜在反应器的内壁和结构部件上尽可能地脱落，从而可以防止发生球形突起，并且可以形成具有优良品质的电子照相感光构件。

7. 发明授权

US06413592B1 Apparatus for forming a deposited film by plasma chemical vapor deposition 有权
标题翻译：用于通过等离子体化学气相沉积法形成沉积膜的装置
公开(公告)号：US06413592B1
公开(公告)日：2002-07-02
申请号：US09652665
申请日：2000-08-31
申请人： Ryuji Okamura , Toshiyasu Shirasuna , Kazuhiko Takada , Kazuyoshi Akiyama , Hitoshi Murayama
发明人： Ryuji Okamura , Toshiyasu Shirasuna , Kazuhiko Takada , Kazuyoshi Akiyama , Hitoshi Murayama
IPC分类号： H05H124
CPC分类号： H01J37/32082 , C23C16/4401 , C23C16/4404 , C23C16/54 , H01L31/202 , H01L31/204 , Y02E10/50 , Y02P70/521
摘要： A film-forming apparatus is provided which comprises a reaction chamber capable of being vacuumed and having a reaction space in which a plurality of substrates can be arranged on a common circumference to establish an inner space circumscribed by the plurality of substrates. A film-forming raw material gas can be introduced into the inner space. A first electrode for supplying a high frequency power into the inner space is provided at a central position in the inner space circumscribed by the plurality of substrates. A second electrode is provided outside the plurality of substrates arranged on the common circumference. A shielding member having a dielectric portion constituted by a dielectric material is provided between the second electrode and the plurality of substrates arranged on the common circumference. The shielding member substantially shields the film-forming raw material gas so that it is confined inside the shielding member and transmits a high frequency power supplied to the second electrode into the inner space.
摘要翻译：提供了一种成膜装置，其包括能够被抽真空并具有反应空间的反应室，其中多个基板可以布置在公共圆周上，以建立由多个基板限定的内部空间。可以将成膜原料气体引入内部空间。在由多个基板包围的内部空间的中心位置设置有用于将高频电力提供到内部空间的第一电极。第二电极设置在布置在公共圆周上的多个基板的外部。在第二电极和布置在公共圆周上的多个基板之间设置具有由电介质材料构成的电介质部分的屏蔽部件。屏蔽构件基本上屏蔽成膜原料气体，使其被限制在屏蔽构件内部，并将提供给第二电极的高频电力传送到内部空间。

8. 发明授权

US06347601B1 Film forming apparatus 有权
标题翻译：成膜装置
公开(公告)号：US06347601B1
公开(公告)日：2002-02-19
申请号：US09219724
申请日：1998-12-23
申请人： Kazuto Hosoi , Toshiyasu Shirasuna , Kazuhiko Takada , Ryuji Okamura , Kazuyoshi Akiyama , Hitoshi Murayama
发明人： Kazuto Hosoi , Toshiyasu Shirasuna , Kazuhiko Takada , Ryuji Okamura , Kazuyoshi Akiyama , Hitoshi Murayama
IPC分类号： C23C1650
CPC分类号： H01J37/32623 , C23C16/509
摘要： For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposited film ready for volume production, particularly, a functional deposit film (for example, an amorphous semiconductor used for semiconductor devices, electrophotographic photosensitive members, photovoltaic devices, and so on) is formed in an apparatus including a reaction vessel which can be hermetically evacuated, a substrate holder in the reaction vessel, a source gas supply, a power supply for high-frequency power. An end covering member is provided at an end of each of the substrate holder, the source gas supply and the power supply.
摘要翻译：为了提高等离子体的均匀性和长期的稳定性，可以容易地形成具有优异的厚度和质量均匀性以及良好的重复性和抑制图像缺陷的发生的膜，并且大大地提高了产率以形成准备进行批量生产的沉积膜，特别是在包括能够被气密抽真空的反应容器的设备中形成功能性沉积膜（例如，用于半导体器件的非晶半导体，电子照相感光构件，光伏器件等），反应容器中的衬底保持器，源气源，高频电源。在每个基板保持器，源气体供应和电源的端部设置端盖部件。

9. 发明授权

US06336423B1 Apparatus for forming a deposited film by plasma chemical vapor deposition 失效
公开(公告)号：US06336423B1
公开(公告)日：2002-01-08
申请号：US09112643
申请日：1998-07-09
申请人： Ryuji Okamura , Toshiyasu Shirasuna , Kazuhiko Takada , Kazuyoshi Akiyama , Hitoshi Murayama
发明人： Ryuji Okamura , Toshiyasu Shirasuna , Kazuhiko Takada , Kazuyoshi Akiyama , Hitoshi Murayama
IPC分类号： C23C1650
CPC分类号： H01J37/32082 , C23C16/4401 , C23C16/4404 , C23C16/54 , H01L31/202 , H01L31/204 , Y02E10/50 , Y02P70/521
摘要： A film-forming apparatus is provided which comprises a reaction chamber capable of being vacuumed and having a reaction space in which a plurality of substrates can be arranged on a common circumference to establish an inner space circumscribed by the plurality of substrates. A film-forming raw material gas can be introduced into the inner space. A first electrode for supplying a high frequency power into the inner space is provided at a central position in the inner space circumscribed by the plurality of substrates. A second electrode is provided outside the plurality of substrates arranged on the common circumference. A shielding member having a dielectric portion constituted by a dielectric material is provided between the second electrode and the plurality of substrates arranged on the common circumference. The shielding member substantially shields the film-forming raw material gas so that it is confined inside the shielding member and transmits a high frequency power supplied to the second electrode into the inner space.

10. 发明授权

US06321759B1 Method for cleaning a substrate 失效
标题翻译：清洗基材的方法
公开(公告)号：US06321759B1
公开(公告)日：2001-11-27
申请号：US09218086
申请日：1998-12-22
申请人： Ryuji Okamura , Toshiyasu Shirasuna , Kazuhiko Takada , Kazuyoshi Akiyama , Hitoshi Murayama , Kazuto Hosoi
发明人： Ryuji Okamura , Toshiyasu Shirasuna , Kazuhiko Takada , Kazuyoshi Akiyama , Hitoshi Murayama , Kazuto Hosoi
IPC分类号： B08B302
CPC分类号： B08B9/023 , B08B3/024 , B08B2203/0217
摘要： A cleaning method for an electrophotographic photosensitive member that eliminate corrosion and cleaning irregularities of a substrate during cleaning, and a method of producing an electrophotographic photosensitive member which is easy to operate and capable of stably forming the photosensitive member at a low cost, in a high yield, and at a high speed. The cleaning method is a water-based cleaning method of cleaning a cylindrical substrate for an electrophotographic photosensitive member, using at least one selected from the group consisting of pure water, pure water having dissolved carbon dioxide, and pure water containing a surface active agent, wherein the cylindrical substrate is cleaned by a cleaning liquid ejected from a plurality of nozzles, and wherein those surfaces of the cleaning liquid ejected from the respective nozzles which are in contact with a surface of the cylindrical substrate do not interfere with each other, and the cleaning apparatus is arranged to carry out the cleaning method.
摘要翻译：一种电子照相感光构件的清洁方法，其在清洁期间消除基板的腐蚀和清洁不规则性，以及制造易于操作并能够以低成本稳定地形成感光构件的电子照相感光构件的制造方法，产量和高速度。清洗方法是使用选自纯水，溶解二氧化碳的纯水和含有表面活性剂的纯水中的至少一种来清洁电子照相感光构件用圆筒状基材的水性清洗方法，其特征在于，所述筒状基板由从多个喷嘴喷出的清洗液体进行清洗，其特征在于，与所述圆筒状基板的表面接触的各喷嘴喷出的所述清洗液的表面不会相互干涉，清洁装置被布置成执行清洁方法。

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