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1. 发明授权

US07696690B2 Short-wavelength light-emitting element arranged in a container with a window having a window board formed of a calcium fluoride crystals 失效
标题翻译：短波长发光元件配置在具有由氟化钙晶体形成的窗口板的窗口的容器中
公开(公告)号：US07696690B2
公开(公告)日：2010-04-13
申请号：US11166523
申请日：2005-06-24
申请人： Kazutaka Terashima , Suzuka Nishimura
发明人： Kazutaka Terashima , Suzuka Nishimura
IPC分类号： H01J63/04
CPC分类号： H01L33/483 , G02B1/02 , H01L33/44 , H01L2924/0002 , H01S5/0222 , H01S5/02296 , H01L2924/00
摘要： A short-wavelength light-emitting element such as an ultraviolet light-emitting element or blue light-emitting element is arranged in a container which has a window with a window board formed of calcium fluoride crystals. Fluoride crystals are ones which contain either metal or metal halide, or both of them. In a production method of fluoride crystals in which the cavity of a crucible is filled with raw material powder and this crucible is heated in a vertical Bridgman furnace, a production method of fluoride crystals of the present invention is the one in which the shortest diameter of a cross section of the cavity of the crucible is small. In a crucible, whose cavity is filled with raw material powder, heated in a vertical Bridgman furnace to produce fluoride crystals, a crucible is the one in which the shortest diameter of a section of the cavity is small.
摘要翻译：在具有由氟化钙晶体形成的窗口板的窗口的容器中配置有紫外发光元件或蓝色发光元件等短波长发光元件。氟化物晶体是含有金属或金属卤化物或它们两者的晶体。在利用原料粉末填充坩埚的空腔的氟化物晶体的制造方法中，在垂直布里奇曼炉中对该坩埚进行加热，本发明的氟化物结晶的制造方法是将最短直径坩埚的空腔的横截面小。在坩埚中填充有原料粉末的坩埚，在垂直的Bridgman炉中加热以产生氟化物晶体，坩埚是空腔部分的最短直径小的坩埚。

2. 发明授权

US6069021A Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer 有权
标题翻译：生长III族氮化物半导体晶体层的方法和掺入III族氮化物半导体晶体层的半导体器件
公开(公告)号：US6069021A
公开(公告)日：2000-05-30
申请号：US270749
申请日：1999-03-17
申请人： Kazutaka Terashima , Suzuka Nishimura , Takuji Tsuzaki , Takashi Udagawa
发明人： Kazutaka Terashima , Suzuka Nishimura , Takuji Tsuzaki , Takashi Udagawa
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02458 , H01L21/02461 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0262
摘要： A method of growing a group III nitride semiconductor crystal layer includes a step of growing a first buffer layer composed of boron phosphide on a silicon single crystal substrate by a vapor phase growth method at a temperature of not lower than 200.degree. C. and not higher than 700.degree. C., a step of growing a second buffer layer composed of boron phosphide on the first buffer layer by a vapor phase growth method at a temperature of not lower than 750.degree. C. and not higher than 1200.degree. C., and a step of growing a crystal layer composed of group III nitride semiconductor crystal represented by general formula Al.sub.p Ga.sub.q In.sub.r N (where 0.ltoreq.p.ltoreq.1, 0.ltoreq.q.ltoreq.1, 0.ltoreq.r.ltoreq.1, p+q+r=1) on the second buffer layer by a vapor phase growth method. A semiconductor device incorporating the group III nitride semiconductor crystal layer is provided.
摘要翻译：生长III族氮化物半导体晶体层的方法包括以下步骤：在不低于200℃的温度下通过气相生长法在硅单晶衬底上生长由磷化磷构成的第一缓冲层，而不是更高在700℃以上的温度下，在不低于750℃且不高于1200℃的温度下，通过气相生长法在第一缓冲层上生长由磷化磷构成的第二缓冲层的步骤，以及生长由通式AlpGaqInrN表示的III族氮化物半导体晶体构成的晶体层的步骤（其中0≤p≤1,0≤i≤1,0≤r≤1 ，p + q + r = 1）通过气相生长法在第二缓冲层上。提供了结合III族氮化物半导体晶体层的半导体器件。

3. 发明申请

US20100297786A1 Method for Manufacturing Compound Semiconductor and Apparatus for Manufacturing the Same 审中-公开
标题翻译：制造复合半导体的方法及其制造方法
公开(公告)号：US20100297786A1
公开(公告)日：2010-11-25
申请号：US12225420
申请日：2007-03-20
申请人： Kazutaka Terashima , Suzuka Nishimura , Hirosi Nagayoshi , Hiroshi Kawamura , Kazuhiro Haga
发明人： Kazutaka Terashima , Suzuka Nishimura , Hirosi Nagayoshi , Hiroshi Kawamura , Kazuhiro Haga
IPC分类号： H01L21/20 , B05C13/02 , H01L21/66
CPC分类号： H01L21/67207 , C30B25/08 , H01L21/02381 , H01L21/02461 , H01L21/0254 , H01L21/67196
摘要： The present invention provides a method for manufacturing a compound semiconductor, which can improve a quality of each of thin film layers constituting a laminate structure.Each of first and second thin film layers is formed by growing a crystal of each thin film layer one over another on a silicon substrate 2 in first and second vapor deposition chambers 6a and 6b for exclusive use, corresponding to the respective thin film layers. As this crystal growth is carried out under conditions under which nothing other than raw gas materials used therein or those derived therefrom, such as stuck materials, precipitates, etc., exists in the first and second vapor deposition chambers 6a and 6b, a decrease in quality of the second thin film layer can be prevented because an unexpected reaction between the raw gas materials used for the first and second thin film layers, etc. can be suppressed. Moreover, a conveyor space 35 extending between the first vapor deposition chamber 6a and the second vapor deposition chamber 6b, in which the silicon substrate 2 is conveyed, is disposed under an atmosphere of nitrogen gas or in a state of vacuum for suppressing oxidation of the thin film layer, thereby suppressing the oxidation of the first thin film layer constituting the outermost layer of the laminated thin film layers to form oxides.
摘要翻译：本发明提供一种化合物半导体的制造方法，其能够提高构成层叠结构的薄膜层的质量。第一和第二薄膜层中的每一个通过在对应于各个薄膜层的第一和第二蒸镀室6a和6b中的硅基板2上逐个生长每个薄膜层的晶体而形成。由于该晶体生长是在第一和第二蒸镀室6a，6b中存在的情况下，在其中使用的原料气体材料以外的其它原料或其衍生物，例如卡住材料，析出物等存在的条件下进行的，由于可以抑制用于第一和第二薄膜层等的原料气体材料之间的意想不到的反应，所以可以防止第二薄膜层的质量。此外，在第一蒸镀室6a和第二蒸镀室6b之间延伸有输送硅基板2的输送空间35配置在氮气氛下，也可以在真空状态下，抑制氧化从而抑制构成层叠薄膜层的最外层的第一薄膜层的氧化，形成氧化物。

4. 发明申请

US20060038194A1 Light-emitting element device, light-receiving element device, optical device, fluoride crystals, production method of fluoride crystals, and crucible 失效
标题翻译：发光元件装置，受光元件装置，光学装置，氟化物晶体，氟化物晶体的制造方法以及坩埚
公开(公告)号：US20060038194A1
公开(公告)日：2006-02-23
申请号：US11166523
申请日：2005-06-24
申请人： Kazutaka Terashima , Suzuka Nishimura
发明人： Kazutaka Terashima , Suzuka Nishimura
IPC分类号： H01L33/00 , H01L29/24
CPC分类号： H01L33/483 , G02B1/02 , H01L33/44 , H01L2924/0002 , H01S5/0222 , H01S5/02296 , H01L2924/00
摘要： In the present invention, a short-wavelength light-emitting element such as an ultraviolet light-emitting element or blue light-emitting element is arranged in a container which has a window with a window board formed of calcium fluoride crystals. According to the present invention, it is possible to obtain a reliable light-emitting element device. Fluoride crystals of the present invention are ones which contain either metal or metal halide, or both of them. In a production method of fluoride crystals in which the cavity of a crucible is filled with raw material powder and this crucible is heated in a vertical Bridgman furnace, a production method of fluoride crystals of the present invention is the one in which the shortest diameter of a cross section of the cavity of the crucible is small. In a crucible, whose cavity is filled with raw material powder, heated in a vertical Bridgman furnace to produce fluoride crystals, a crucible of the present invention is the one in which the shortest diameter of a section of the cavity is small.
摘要翻译：在本发明中，将紫外发光元件或蓝色发光元件等短波长发光元件配置在具有由氟化钙晶体形成的窗口板的窗口的容器中。根据本发明，可以获得可靠的发光元件装置。本发明的氟化物晶体是含有金属或金属卤化物或它们两者的氟化物晶体。在利用原料粉末填充坩埚的空腔的氟化物晶体的制造方法中，在垂直布里奇曼炉中对该坩埚进行加热，本发明的氟化物结晶的制造方法是将最短直径坩埚的空腔的横截面小。在坩埚中填充有原料粉末的坩埚，在垂直布里奇曼炉中加热以产生氟化物晶体，本发明的坩埚是其一部分的最小直径小的坩埚。

5. 发明授权

US06194744B1 Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer 有权
标题翻译：生长III族氮化物半导体晶体层的方法和掺入III族氮化物半导体晶体层的半导体器件
公开(公告)号：US06194744B1
公开(公告)日：2001-02-27
申请号：US09500450
申请日：2000-02-09
申请人： Takashi Udagawa , Kazutaka Terashima , Suzuka Nishimura , Takuji Tsuzaki
发明人： Takashi Udagawa , Kazutaka Terashima , Suzuka Nishimura , Takuji Tsuzaki
IPC分类号： H01L3300
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02458 , H01L21/02461 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0262
摘要： A method of growing a group III nitride semiconductor crystal layer includes a step of growing a first buffer layer composed of boron phosphide on a silicon single crystal substrate by a vapor phase growth method at a temperature of not lower than 200° C. and not higher than 700° C., a step of growing a second buffer layer composed of boron phosphide on the first buffer layer by a vapor phase growth method at a temperature of not lower than 750° C. and not higher than 1200° C., and a step of growing a crystal layer composed of group III nitride semiconductor crystal represented by general formula AlpGaqInrN (where 0≦p≦1, 0≦q≦1, 0≦r≦1, p+q+r=1) on the second buffer layer by a vapor phase growth method. A semiconductor device incorporating the group III nitride semiconductor crystal layer is provided.
摘要翻译：生长III族氮化物半导体晶体层的方法包括在不低于200℃的温度下通过气相生长法在硅单晶衬底上生长由磷化磷构成的第一缓冲层的步骤，而不是更高在700℃以上的温度下，在不低于750℃且不高于1200℃的温度下，通过气相生长法在第一缓冲层上生长由磷化磷构成的第二缓冲层的步骤，以及生长由通式AlpGaqInrN表示的III族氮化物半导体晶体构成的晶体层的步骤（其中0≤p≤1,0<= q <=1,0,0≤r<= 1，p + q + r = 1）通过气相生长法在第二缓冲层上。提供了结合III族氮化物半导体晶体层的半导体器件。

6. 发明授权

US5030315A Methods of manufacturing compound semiconductor crystals and apparatus for the same 失效
标题翻译：制造化合物半导体晶体的方法及其装置
公开(公告)号：US5030315A
公开(公告)日：1991-07-09
申请号：US908985
申请日：1986-09-18
申请人： Syoichi Washizuka , Kazutaka Terashima , Johji Nishio , Masayuki Watanabe
发明人： Syoichi Washizuka , Kazutaka Terashima , Johji Nishio , Masayuki Watanabe
IPC分类号： C30B29/42 , C30B15/02 , C30B27/02 , H01L21/18 , H01L21/208
CPC分类号： C30B15/02
摘要： A method of manufacturing compound semiconductor crystals, comprising the steps of, providing a compound semiconductor melt in a crucible, said melt having a composition ratio which deviates from stoichiometry, pulling a compound semiconductor crystal from said crucible by using a seed crystal, and during the pulling step, adding to the melt a constitutional element of said compound semiconductor melt which is present in less than a stoichiometric amount, the element being added in a quantity sufficient to maintain said composition ratio of the first step. An apparatus for manufacturing compound semiconductor crystals is also provided.
摘要翻译：一种制造化合物半导体晶体的方法，包括以下步骤：在坩埚中提供化合物半导体熔体，所述熔体具有偏离化学计量的组成比，通过使用晶种从所述坩埚中拉出化合物半导体晶体，并且在向所述熔体中加入所述化合物半导体熔体的组成元素，其以小于化学计量的量存在，所述元素的添加量足以保持所述第一步的组成比。还提供了一种用于制造化合物半导体晶体的装置。

7. 发明授权

US6019837A Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal 失效
标题翻译：晶体中杂质浓度的检测方法，单晶制造方法和单晶上拉装置
公开(公告)号：US6019837A
公开(公告)日：2000-02-01
申请号：US978282
申请日：1997-11-25
申请人： Susumu Maeda , Keisei Abe , Kazutaka Terashima , Hideo Nakanishi
发明人： Susumu Maeda , Keisei Abe , Kazutaka Terashima , Hideo Nakanishi
IPC分类号： C30B15/00 , C30B15/20 , C30B29/06 , H01L21/208
CPC分类号： C30B29/06 , C30B15/20 , Y10S117/917
摘要： A temperature sensor 42 is provided in a furnace 11, measuring temperature above a molten liquid 24 put in a crucible 12 to check proceedings of evaporation of oxygen vaporized from a free surface 44 of the molten liquid 24. From the data, and considering the relation with the oxygen dissolved into the crucible 12, the oxygen concentration in the molten liquid 24 can be found and the amount of oxygen taken into a single silicon crystal 40 pulled up from the molten liquid 24 can be figured out.
摘要翻译：温度传感器42设置在炉11中，测量放置在坩埚12中的熔融液体24上方的温度，以检查从熔融液体24的自由表面44蒸发的氧的蒸发程序。从数据中，考虑到关系随着氧气溶解在坩埚12中，可以发现熔融液体24中的氧浓度，并且可以计算出从熔融液体24中提取的单个硅晶体40中的氧气量。

8. 发明授权

US6004393A Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal 失效
公开(公告)号：US6004393A
公开(公告)日：1999-12-21
申请号：US235637
申请日：1999-01-22
申请人： Susumu Maeda , Keisei Abe , Kazutaka Terashima , Hideo Nakanishi
发明人： Susumu Maeda , Keisei Abe , Kazutaka Terashima , Hideo Nakanishi
IPC分类号： C30B15/00 , C30B15/20 , C30B35/00
CPC分类号： C30B29/06 , C30B15/20 , Y10S117/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032
摘要： A temperature sensor 42 is provided in a furnace 11, measuring temperature above a molten liquid 24 put in a crucible 12 to check proceedings of evaporation of oxygen vaporized from a free surface 44 of the molten liquid 24. From the data, and considering the relation with the oxygen dissolved into the crucible 12, the oxygen concentration in the molten liquid 24 can be found and the amount of oxygen taken into a single silicon crystal 40 pulled up from the molten liquid 24 can be figured out.

9. 发明申请

US20080134962A1 CRYSTALLIZATION METHOD AND CRYSTALLIZATION APPARATUS 有权
标题翻译：结晶方法和结晶装置
公开(公告)号：US20080134962A1
公开(公告)日：2008-06-12
申请号：US11876274
申请日：2007-10-22
申请人： Yasunao OYAMA , Kazutaka Terashima
发明人： Yasunao OYAMA , Kazutaka Terashima
IPC分类号： C30B11/00
CPC分类号： G03F7/70958 , C30B11/00 , C30B29/12 , G02B1/02 , Y10T117/10 , Y10T117/1008 , Y10T117/102
摘要： A crystallization method includes the steps of melting a crystallized material in a crucible by heating, and growing a crystal by cooling and coagulating the melted material, wherein said melting step includes introducing a predetermined gas into the melted material.
摘要翻译：结晶方法包括以下步骤：通过加热熔化坩埚中的结晶材料，并通过冷却和凝结熔融材料使晶体生长，其中所述熔融步骤包括将预定气体引入熔融材料中。

10. 发明授权

US6096128A Silicon crystal, and device and method for manufacturing same 失效
标题翻译：硅晶体及其制造方法和装置
公开(公告)号：US6096128A
公开(公告)日：2000-08-01
申请号：US90875
申请日：1998-06-05
申请人： Hideo Nakanishi , Susumu Maeda , Keisei Abe , Kazutaka Terashima
发明人： Hideo Nakanishi , Susumu Maeda , Keisei Abe , Kazutaka Terashima
IPC分类号： C30B11/00 , C30B15/00 , C30B9/10 , C30B29/06
CPC分类号： C30B29/06 , C30B11/00 , C30B15/00
摘要： A germanium layer 19 is melted on top of a starting polycrystalline silicon ingot 18, at a temperature below the melting point of pure silicon. Silicon is dissolved at the interface and floats to the top of the germanium melt to form a silicon melt layer 11, from which a crystal 20 can be drawn. The process permits the production of large diameter crystal with low oxygen content and no more than one percent germanium.
摘要翻译：在低于纯硅熔点的温度下，锗层19在起始多晶硅锭18的顶部熔化。硅在界面处溶解并漂浮到锗熔体的顶部以形成硅熔体层11，从中可以吸取晶体20。该方法允许生产具有低氧含量和不超过1％锗的大直径晶体。

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