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1. 发明授权

US6096128A Silicon crystal, and device and method for manufacturing same 失效
标题翻译：硅晶体及其制造方法和装置
公开(公告)号：US6096128A
公开(公告)日：2000-08-01
申请号：US90875
申请日：1998-06-05
申请人： Hideo Nakanishi , Susumu Maeda , Keisei Abe , Kazutaka Terashima
发明人： Hideo Nakanishi , Susumu Maeda , Keisei Abe , Kazutaka Terashima
IPC分类号： C30B11/00 , C30B15/00 , C30B9/10 , C30B29/06
CPC分类号： C30B29/06 , C30B11/00 , C30B15/00
摘要： A germanium layer 19 is melted on top of a starting polycrystalline silicon ingot 18, at a temperature below the melting point of pure silicon. Silicon is dissolved at the interface and floats to the top of the germanium melt to form a silicon melt layer 11, from which a crystal 20 can be drawn. The process permits the production of large diameter crystal with low oxygen content and no more than one percent germanium.
摘要翻译：在低于纯硅熔点的温度下，锗层19在起始多晶硅锭18的顶部熔化。硅在界面处溶解并漂浮到锗熔体的顶部以形成硅熔体层11，从中可以吸取晶体20。该方法允许生产具有低氧含量和不超过1％锗的大直径晶体。

2. 发明授权

US6019837A Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal 失效
标题翻译：晶体中杂质浓度的检测方法，单晶制造方法和单晶上拉装置
公开(公告)号：US6019837A
公开(公告)日：2000-02-01
申请号：US978282
申请日：1997-11-25
申请人： Susumu Maeda , Keisei Abe , Kazutaka Terashima , Hideo Nakanishi
发明人： Susumu Maeda , Keisei Abe , Kazutaka Terashima , Hideo Nakanishi
IPC分类号： C30B15/00 , C30B15/20 , C30B29/06 , H01L21/208
CPC分类号： C30B29/06 , C30B15/20 , Y10S117/917
摘要： A temperature sensor 42 is provided in a furnace 11, measuring temperature above a molten liquid 24 put in a crucible 12 to check proceedings of evaporation of oxygen vaporized from a free surface 44 of the molten liquid 24. From the data, and considering the relation with the oxygen dissolved into the crucible 12, the oxygen concentration in the molten liquid 24 can be found and the amount of oxygen taken into a single silicon crystal 40 pulled up from the molten liquid 24 can be figured out.
摘要翻译：温度传感器42设置在炉11中，测量放置在坩埚12中的熔融液体24上方的温度，以检查从熔融液体24的自由表面44蒸发的氧的蒸发程序。从数据中，考虑到关系随着氧气溶解在坩埚12中，可以发现熔融液体24中的氧浓度，并且可以计算出从熔融液体24中提取的单个硅晶体40中的氧气量。

3. 发明授权

US6004393A Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal 失效
公开(公告)号：US6004393A
公开(公告)日：1999-12-21
申请号：US235637
申请日：1999-01-22
申请人： Susumu Maeda , Keisei Abe , Kazutaka Terashima , Hideo Nakanishi
发明人： Susumu Maeda , Keisei Abe , Kazutaka Terashima , Hideo Nakanishi
IPC分类号： C30B15/00 , C30B15/20 , C30B35/00
CPC分类号： C30B29/06 , C30B15/20 , Y10S117/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032
摘要： A temperature sensor 42 is provided in a furnace 11, measuring temperature above a molten liquid 24 put in a crucible 12 to check proceedings of evaporation of oxygen vaporized from a free surface 44 of the molten liquid 24. From the data, and considering the relation with the oxygen dissolved into the crucible 12, the oxygen concentration in the molten liquid 24 can be found and the amount of oxygen taken into a single silicon crystal 40 pulled up from the molten liquid 24 can be figured out.

4. 发明授权

US5720810A Semiconductor single-crystal growth system 失效
标题翻译：半导体单晶生长系统
公开(公告)号：US5720810A
公开(公告)日：1998-02-24
申请号：US517896
申请日：1995-08-22
申请人： Yoshiaki Arai , Keisei Abe , Norihisa Machida
发明人： Yoshiaki Arai , Keisei Abe , Norihisa Machida
IPC分类号： C30B15/00 , C30B15/12 , C30B15/14 , H01L21/208 , C30B35/00
CPC分类号： C30B29/06 , C30B15/12 , C30B15/14 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1084
摘要： A system for growing high-quality, low-carbon-concentration single crystals which have an excellent gas-flow guiding function near the melt, containing 1) an inverted conical, flow-guide cover placed above and coaxially with a double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the single crystal to be grown and the inner surface of the sidewall of the inner crucible; 2) a short passage comprising a hole passing through the sidewall of the inner crucible at a position higher than the level of the melt; and 3) a flow guide cylinder placed above and coaxially with the double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the sidewall of the inner crucible and the inner surface of the sidewall of the outer crucible, all arranged in a furnace.
摘要翻译：一种用于生长在熔体附近具有优异的气流引导功能的高质量低碳浓度单晶的系统，其包含1）倒置的锥形导流盖，其位于双壁坩埚的上方并与其同轴，其下端位于熔体表面的正上方，并且在要生长的单晶的外表面与内坩埚的侧壁的内表面之间的空间中; 2）短通道，其包括穿过内坩埚的侧壁在高于熔体高度的位置的孔; 和3）设置在双壁坩埚上方并同轴的导流筒，其下端位于熔体表面的正上方，并且位于内坩埚的侧壁的外表面与内坩埚的内表面之间的空间中外坩埚的侧壁均布置在炉中。

5. 发明授权

US07456082B2 Method for producing silicon single crystal and silicon single crystal 有权
标题翻译：硅单晶和硅单晶的制造方法
公开(公告)号：US07456082B2
公开(公告)日：2008-11-25
申请号：US11492705
申请日：2006-07-24
申请人： Keisei Abe
发明人： Keisei Abe
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： C30B15/305
摘要： In a method for producing a silicon single by pulling the silicon single crystal from a silicon melt contained in a crucible, a magnetic field is applied to the silicon melt in a radial direction of the silicon single crystal, and a vertical level of a center of the magnetic field relative to a surface of the silicon melt is controlled such that a thermal gradient in an axial direction of the crystal is maintained at a constant value in respective portions along a radial direction of the silicon single crystal.
摘要翻译：在通过从包含在坩埚中的硅熔体中拉出硅单晶来制造硅单晶的方法中，在硅单晶的径向方向上对硅熔体施加磁场，并且将垂直方向的控制相对于硅熔体的表面的磁场，使得在硅单晶的径向方向的各部分中，晶体轴向的热梯度保持恒定值。

6. 发明授权

US5858085A Method for growing a semiconductor single-crystal 失效
标题翻译：生长半导体单晶的方法
公开(公告)号：US5858085A
公开(公告)日：1999-01-12
申请号：US864721
申请日：1997-05-28
申请人： Yoshiaki Arai , Keisei Abe , Norihisa Machida
发明人： Yoshiaki Arai , Keisei Abe , Norihisa Machida
IPC分类号： C30B15/00 , C30B15/12 , C30B15/14 , H01L21/208
CPC分类号： C30B29/06 , C30B15/12 , C30B15/14 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1084
摘要： A system for growing high-quality, low-carbon-concentration single crystals which have an excellent gas-flow guiding function near the melt, containing 1) an inverted conical, flow-guide cover placed above and coaxially with a double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the single crystal to be grown and the inner surface of the sidewall of the inner crucible; 2) a short passage comprising a hole passing through the sidewall of the inner crucible at a position higher than the level of the melt; and 3) a flow guide cylinder placed above and coaxially with the double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the sidewall of the inner crucible and the inner surface of the sidewall of the outer crucible, all arranged in a furnace.
摘要翻译：一种用于生长在熔体附近具有优异的气流引导功能的高质量低碳浓度单晶的系统，其包含1）倒置的锥形导流盖，其位于双壁坩埚的上方并与其同轴，其下端位于熔体表面的正上方，并且在要生长的单晶的外表面与内坩埚的侧壁的内表面之间的空间中; 2）短通道，其包括穿过内坩埚的侧壁在高于熔体高度的位置的孔; 和3）设置在双壁坩埚上方并同轴的导流筒，其下端位于熔体表面的正上方，并且位于内坩埚的侧壁的外表面与内坩埚的内表面之间的空间中外坩埚的侧壁均布置在炉中。

7. 发明授权

US5474022A Double crucible for growing a silicon single crystal 失效
标题翻译：用于生长硅单晶的双坩埚
公开(公告)号：US5474022A
公开(公告)日：1995-12-12
申请号：US420350
申请日：1995-04-11
申请人： Keisei Abe , Hisashi Furuya , Norihisa Machida , Yoshiaki Arai
发明人： Keisei Abe , Hisashi Furuya , Norihisa Machida , Yoshiaki Arai
IPC分类号： C30B15/00 , C30B15/12 , C30B35/00
CPC分类号： C30B29/06 , C30B15/12 , Y10T117/1052 , Y10T117/1056
摘要： There is provided a double crucible for growing a silicon single crystal in which the partition wall 17 in the shape of ring is concentric with the main crucible 6 in the shape of bottomed cylinder and the lower end of the partition wall 17 is fixed on the inner bottom of the main crucible, and thus the outer crucible 18 and the inner crucible 19 are formed inside the main crucible. The partition wall 17 is uniform in thickness and has introducing holes 20 in its lower part which link the outer crucible with the inner crucible. The partition wall is made so that the inner diameter of its lower part may be smaller than the inner diameter of its upper part. Supposing that A is the diameter of the partition wall at a level of molten silicon, h is a depth from the surface of the molten silicon to the introducing holes, V(out) is an amount of molten silicon stored in the outer crucible, and V(in) is an amount of molten stored in the inner crucible, the relation of D/A=1.5 to 3, 2h/A>1, and V(out)/V(in)=0.4 to 0.9, is satisfied. The invention reduces the number of coarse COPs of 0.3 .mu.m or greater in diameter generated after Sc-1 cleaning on the surface of a silicon wafer made of a single crystal bar grown without making larger in size the furnace of a silicon single crystal continuously growing apparatus.
摘要翻译：提供了一种用于生长硅单晶的双坩埚，其中环形分隔壁17与主坩埚6同心，为有底圆筒形，分隔壁17的下端固定在内部主坩埚的底部，因此外坩埚18和内坩埚19形成在主坩埚的内部。分隔壁17的厚度均匀，并且在其下部具有连接外坩埚与内坩埚的引入孔20。分隔壁被制成使得其下部的内径可以小于其上部的内径。假设A是在熔融硅水平处的分隔壁的直径，h是从熔融硅表面到引入孔的深度，V（out）是存储在外坩埚中的熔融硅的量， V（in）是存储在内坩埚中的熔融量，D / A = 1.5〜3,2h / A> 1，V（out）/ V（in）= 0.4〜0.9的关系成立。本发明减少了在不增加尺寸的单晶棒制成的硅晶片的表面上在Sc-1清洁之后产生的直径为0.3μm或更大的粗大COP的数量，硅单晶的炉连续生长仪器。

8. 发明申请

US20070028833A1 Method for producing silicon single crystal and silicon single crystal 有权
标题翻译：硅单晶和硅单晶的制造方法
公开(公告)号：US20070028833A1
公开(公告)日：2007-02-08
申请号：US11492705
申请日：2006-07-24
申请人： Keisei Abe
发明人： Keisei Abe
IPC分类号： C30B15/00
CPC分类号： C30B15/305
摘要： In a method for producing a silicon single by pulling the silicon single crystal from a silicon melt contained in a crucible, a magnetic field is applied to the silicon melt in a radial direction of the silicon single crystal, and a vertical level of a center of the magnetic field relative to a surface of the silicon melt is controlled such that a thermal gradient in an axial direction of the crystal is maintained at a constant value in respective portions along a radial direction of the silicon single crystal.
摘要翻译：在通过从包含在坩埚中的硅熔体中拉出硅单晶来制造硅单晶的方法中，在硅单晶的径向方向上对硅熔体施加磁场，并且将垂直方向的控制相对于硅熔体的表面的磁场，使得在硅单晶的径向方向的各部分中，晶体轴向的热梯度保持恒定值。

9. 发明授权

US06261364B1 Semiconductor single-crystal growth system 失效
标题翻译：半导体单晶生长系统
公开(公告)号：US06261364B1
公开(公告)日：2001-07-17
申请号：US09144454
申请日：1998-09-01
申请人： Yoshiaki Arai , Keisei Abe , Norihisa Machida
发明人： Yoshiaki Arai , Keisei Abe , Norihisa Machida
IPC分类号： C30B3500
CPC分类号： C30B29/06 , C30B15/12 , C30B15/14 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1084
摘要： A system for growing high-quality, low-carbon-concentration single crystals which have an excellent gas-flow guiding function near the melt, containing 1) an inverted conical, flow-guide cover placed above and coaxially with a double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the single crystal to be grown and the inner surface of the sidewall of the inner crucible; 2) a short passage comprising a hole passing through the sidewall of the inner crucible at a position higher than the level of the melt; and 3) a flow guide cylinder placed above and coaxially with the double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the sidewall of the inner crucible and the inner surface of the sidewall of the outer crucible, all arranged in a furnace.
摘要翻译：一种用于生长在熔体附近具有优异的气流引导功能的高质量低碳浓度单晶的系统，其包含1）倒置的锥形导流盖，其位于双壁坩埚的上方并与其同轴，其下端位于熔体表面的正上方，并且在要生长的单晶的外表面与内坩埚的侧壁的内表面之间的空间中; 2）短通道，其包括穿过内坩埚的侧壁在高于熔体高度的位置的孔; 和3）设置在双壁坩埚上方并同轴的导流筒，其下端位于熔体表面的正上方，并且位于内坩埚的侧壁的外表面与内坩埚的内表面之间的空间中外坩埚的侧壁均布置在炉中。

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