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1. 发明专利

JP2010132781A Method of producing modified tetrafluoroethylene resin powder and modified tetrafluoroethylene resin powder 有权
标题翻译：生产改性四氯氟乙烯树脂粉末和改性四氯氟乙烯树脂粉末的方法
公开(公告)号：JP2010132781A
公开(公告)日：2010-06-17
申请号：JP2008310459
申请日：2008-12-05
申请人： Takashi Udagawa , 昂宇田川
发明人： UDAGAWA TAKASHI
IPC分类号： C08J7/00 , C08J3/20 , C08K5/01 , C08L27/18
摘要： PROBLEM TO BE SOLVED: To provide a method of producing tetrafluoroethylene resin powder having improved adhesion and compatibility to different types of materials, and to provide modified tetrafluoroethylene resin powder. SOLUTION: The method of producing the modified tetrafluoroethylene resin powder includes: a mixture-preparation step of preparing a mixture containing tetrafluoroethylene resin powder and paraffinic hydrocarbon at a predetermined ratio, in which the tetrafluoroethylene resin powder and the paraffinic hydrocarbon are blended together; and an ionizing radiation step of irradiating ionizing radiation to the mixture. As a result, the paraffinic hydrocarbon is attached to the surface of the tetrafluoroethylene resin powder, thereby providing the tetrafluoroethylene resin powder having improved adhesion and compatibility to different types of materials. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有改善的粘合性和与不同类型材料的相容性的四氟乙烯树脂粉末的制备方法，并提供改性的四氟乙烯树脂粉末。解决方案：制备改性的四氟乙烯树脂粉末的方法包括：将四氟乙烯树脂粉末和链烷烃混合在一起的预定比例制备含有四氟乙烯树脂粉末和链烷烃的混合物的混合物制备步骤 ; 以及向混合物照射电离辐射的电离辐射步骤。结果，链烷烃附着在四氟乙烯树脂粉末的表面上，从而提供具有改善的粘合性和与不同类型材料的相容性的四氟乙烯树脂粉末。版权所有（C）2010，JPO＆INPIT

2. 发明授权

US08222674B2 Semiconductor device having a group-III nitride superlattice layer on a silicon substrate 失效
标题翻译：在硅衬底上具有III族氮化物超晶格层的半导体器件
公开(公告)号：US08222674B2
公开(公告)日：2012-07-17
申请号：US13236384
申请日：2011-09-19
申请人： Tadashi Ohachi , Takashi Udagawa
发明人： Tadashi Ohachi , Takashi Udagawa
IPC分类号： H01L31/0328 , H01L31/0336 , H01L33/00
CPC分类号： H01L33/007 , B82Y20/00 , C30B29/36 , C30B29/40 , C30B29/403 , C30B29/68 , H01L21/02381 , H01L21/02433 , H01L21/02447 , H01L21/02516 , H01L21/02538 , H01L21/0254 , H01L21/0262 , H01L33/04 , H01L33/12 , H01L2924/0002 , H01S5/021 , H01S5/32341 , H01S5/34333 , H01L2924/00
摘要： Provided is a semiconductor device containing a silicon single crystal substrate 101, a silicon carbide layer 102 provided on a surface of the substrate, a Group III nitride semiconductor junction layer 103 provided in contact with the silicon carbide layer, and a superlattice-structured layer 104 constituted by Group III nitride semiconductors on the Group III nitride semiconductor junction layer. In this semiconductor device, the silicon carbide layer is a layer of a cubic system whose lattice constant exceeds 0.436 nm and is not more than 0.460 nm and which has a nonstoichiometric composition containing silicon abundantly in terms of composition, and the Group III nitride semiconductor junction layer has a composition of AlxGaYInzN1-αMα (0≦X, Y, Z≦1, X+Y+Z=1, 0≦α
摘要翻译：提供了包含硅单晶衬底101，设置在衬底的表面上的碳化硅层102，与碳化硅层接触设置的III族氮化物半导体结层103和超晶格结构层104的半导体器件由III族氮化物半导体结层上的III族氮化物半导体构成。在该半导体装置中，碳化硅层是晶格常数超过0.436nm且不大于0.460nm的立方晶系层，其组成中含有大量硅的非化学计量组成，III族氮化物半导体结层的组成为Al x Ga y In z N 1-αMα（0＆nlE; X，Y，Z＆nlE; 1，X + Y + Z = 1,0＆lt; nlE;α<1，M是除了氮以外的第V族元素）。

3. 发明申请

US20090267081A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATION THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090267081A1
公开(公告)日：2009-10-29
申请号：US12067407
申请日：2006-09-12
申请人： Takashi Udagawa
发明人： Takashi Udagawa
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： H01L29/1608 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L33/007 , H01L33/16 , Y10S438/933
摘要： A semiconductor device includes a substrate formed of a single crystal. a silicon carbide layer disposed on a surface of the single crystal substrate and an intermediate layer disposed on a surface of the silicon carbide layer and formed of a Group III nitride semiconductor, wherein the silicon carbide layer is formed of a cubic crystal stoichiometrically containing silicon copiously and the surface thereof has a (3×3) reconstruction structure. The semiconductor device is fabricated by a method including a first step of blowing a hydrocarbon gas on the surface of the substrate, thereby inducing adsorption of hydrocarbon thereon, a second step of heating the substrate having adsorbed the hydrocarbon to a temperature exceeding a temperature used for the adsorption of the hydrocarbon while irradiating the surface of the substrate with electrons and consequently giving rise to a silicon carbide layer formed of a cubic crystal stoichiometrically containing silicon copiously and provided with a surface having a (3×3) reconstruction structure and a third step of supplying a gaseous raw material containing nitrogen and a gaseous raw material containing a Group III element to the surface of the silicon carbide layer and consequently giving rise to the intermediate layer formed of the Group III nitride semiconductor.
摘要翻译：半导体器件包括由单晶形成的衬底。设置在单晶衬底的表面上的碳化硅层和设置在碳化硅层的表面上并由III族氮化物半导体形成的中间层，其中碳化硅层由含有大量化学计量的硅的立方晶体形成其表面具有（3×3）重构结构。该半导体器件通过包括在基底表面吹入烃气体从而诱导其上的烃吸附的第一步骤的方法制造，第二步是将吸附有烃的基底加热到超过用于在用电子照射衬底表面的同时吸附碳氢化合物，并且因此产生由具有（3×3）重构结构的表面形成的具有化学计量含硅的立方晶体的碳化硅层，并且提供第三步骤将含有氮的气态原料和含有III族元素的气态原料输送到碳化硅层的表面，由此产生由III族氮化物半导体形成的中间层。

4. 发明申请

US20090127571A1 METHOD FOR FABRICATING SEMICONDUCTOR LAYER AND LIGHT-EMITTING DIODE 失效
标题翻译：制备半导体层和发光二极管的方法
公开(公告)号：US20090127571A1
公开(公告)日：2009-05-21
申请号：US12065363
申请日：2006-08-30
申请人： Takashi Udagawa
发明人： Takashi Udagawa
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： H01L21/0262 , C30B23/02 , C30B23/025 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/02447 , H01L21/02461 , H01L21/0254 , H01L33/005 , H01L33/007
摘要： A semiconductor layer containing defects only in a small density, possessing good quality and exhibiting a large ionic bonding property as to GaN, for example, is formed on a semiconductor layer, such as a silicon carbide layer, which is made of a material possessing a small ionicity and exhibiting a strong covalent bonding property. A method for forming a semiconductor layer includes forming on the surface of a first semiconductor layer 102 possessing a first ionicity a second semiconductor layer 103 possessing a second ionicity larger than the first ionicity. The second semiconductor layer 103 is formed while irradiating the surface of the first semiconductor layer existing on the side for forming the second semiconductor layer with electrons in a vacuum.
摘要翻译：在诸如碳化硅层的半导体层上形成包含例如碳化硅层的半导体层，该半导体层包含仅具有小密度的缺陷，具有优良质量并且表现出与GaN类相比具有大的离子键合性能的半导体层，该半导体层由具有表现出强的共价键合性。形成半导体层的方法包括在具有第一离子性的第一半导体层102的表面上形成具有大于第一离子性的第二离子性的第二半导体层103。在真空中用电子照射存在于用于形成第二半导体层的一侧上的第一半导体层的表面，形成第二半导体层103。

5. 发明授权

US07479731B2 Multicolor light-emitting lamp and light source 失效
标题翻译：多色发光灯和光源
公开(公告)号：US07479731B2
公开(公告)日：2009-01-20
申请号：US10486985
申请日：2002-08-16
申请人： Takashi Udagawa
发明人： Takashi Udagawa
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L33/30 , H01L25/0753 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01L2924/00014
摘要： The present invention provides a technique for fabricating a multicolor light-emitting lamp by using a blue LED having a structure capable of avoiding cumbersome bonding. In particular, the present invention provides a technique for fabricating a multicolor light-emitting lamp by using a hetero-junction type GaP-base LED capable of emitting high intensity green light in combination. Also, for example, in fabricating a multicolor light-emitting lamp from the blue LED and the yellow LED, the present invention provides a technique for fabricating a multicolor light-emitting lamp from a blue LED requiring no cumbersome bonding and a hetero-junction type GaAs1-ZPZ-base yellow LED of emitting light having high light emission intensity.
摘要翻译：本发明提供一种通过使用具有能够避免麻烦的结合的结构的蓝色LED来制造多色发光灯的技术。特别地，本发明提供了一种通过组合使用能够发射高强度绿光的异质结型GaP基LED来制造多色发光灯的技术。此外，例如，在从蓝色LED和黄色LED制造多色发光灯的同时，本发明提供了一种从不需要繁琐的接合的蓝色LED制造多色发光灯和异质结型的技术具有高发光强度的发光的GaAs1-ZPZ基黄色LED。

6. 发明申请

US20080268562A1 COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF 失效
标题翻译：化合物半导体发光器件及其制造方法
公开(公告)号：US20080268562A1
公开(公告)日：2008-10-30
申请号：US12121461
申请日：2008-05-15
申请人： Ryouichi TAKEUCHI , Wataru Nabekura , Takashi Udagawa
发明人： Ryouichi TAKEUCHI , Wataru Nabekura , Takashi Udagawa
IPC分类号： H01L21/00
CPC分类号： H01L33/30 , H01L33/0079 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/05644 , H01L2224/05666 , H01L2224/05669 , H01L2224/13 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要： A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron.
摘要翻译：提供一种pn结合化合物半导体发光器件，其包括由n型或p型磷化铝镓磷化物构成的发光层和用于支撑层叠结构的透光性基板的层叠结构并且层叠结构和透光性基板接合在一起，其中层叠结构包括n型或p型导体层，导体层和基板接合在一起，并且导体层由含有硼的III-V族化合物半导体。

7. 发明申请

US20070215886A1 Compound Semiconductor Light-Emitting Device And Production Method Thereof 失效
标题翻译：复合半导体发光器件及其制作方法
公开(公告)号：US20070215886A1
公开(公告)日：2007-09-20
申请号：US10594065
申请日：2005-03-28
申请人： Ryouichi Takeuchi , Wataru Nabekura , Takashi Udagawa
发明人： Ryouichi Takeuchi , Wataru Nabekura , Takashi Udagawa
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/30 , H01L33/0079 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/05644 , H01L2224/05666 , H01L2224/05669 , H01L2224/13 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要： A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron.
摘要翻译：提供一种pn结合化合物半导体发光器件，其包括由n型或p型磷化铝镓磷化物构成的发光层和用于支撑层叠结构的透光性基板的层叠结构并且层叠结构和透光性基板接合在一起，其中层叠结构包括n型或p型导体层，导体层和基板接合在一起，并且导体层由含有硼的III-V族化合物半导体。

8. 发明授权

US06835962B2 Stacked layer structure, light-emitting device, lamp, and light source unit 失效
标题翻译：堆叠层结构，发光装置，灯和光源单元
公开(公告)号：US06835962B2
公开(公告)日：2004-12-28
申请号：US10207901
申请日：2002-07-31
申请人： Takashi Udagawa
发明人： Takashi Udagawa
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/06 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： A stacked layer structure including a single crystal substrate; an amorphous or polycrystalline buffer layer formed from a boron-containing Group III-V compound semiconductor. The buffer layer is provided on the substrate; a cladding layer formed from a boron-containing Group III-V compound semiconductor is provided on the buffer layer; and a light-emitting layer having a quantum well structure including a barrier layer formed from a boron-containing Group III-V compound semiconductor and a well layer formed from a Group III nitride semiconductor is provided on the cladding layer. The barrier layer is formed from a boron-containing Group III-V compound semiconductor having the same lattice constant as a boron-containing Group III-V compound semiconductor constituting the cladding layer.
摘要翻译：包括单晶衬底的堆叠层结构; 由含硼III-V族化合物半导体形成的非晶或多晶缓冲层。缓冲层设置在基板上; 在所述缓冲层上设置由含硼III-V族化合物半导体形成的覆层; 并且在包层上设置具有包含由含硼III-V族化合物半导体形成的阻挡层和由III族氮化物半导体形成的阱层的量子阱结构的发光层。阻挡层由构成覆层的含硼III-V族化合物半导体具有相同晶格常数的含硼III-V族化合物半导体形成。

9. 发明授权

US06831293B2 P-n junction-type compound semiconductor light-emitting device, production method thereof, lamp and light source 失效
标题翻译： P-n结型化合物半导体发光器件，其制造方法，灯和光源
公开(公告)号：US06831293B2
公开(公告)日：2004-12-14
申请号：US10389904
申请日：2003-03-18
申请人： Takashi Udagawa
发明人： Takashi Udagawa
IPC分类号： H01L3300
CPC分类号： H01L33/30 , H01L33/02
摘要： A p-n junction-type compound semiconductor light-emitting device having a substrate formed of a single crystal, a first barrier layer provided on the substrate and formed of a compound semiconductor of a first conduction type, a light-emitting layer provided on the first barrier layer and formed of an indium (In)-containing group III nitride semiconductor of a first or a second conduction type, and an evaporation-preventing layer provided on the light-emitting layer for preventing the evaporation of indium from the light-emitting layer. The evaporation-preventing layer is formed of an undoped boron phosphide (BP)-base semiconductor of a second conduction type. A method for producing the semiconductor-light emitting device is also disclosed.
摘要翻译：一种pn结型化合物半导体发光器件，具有由单晶形成的衬底，设置在衬底上并由第一导电类型的化合物半导体形成的第一势垒层，设置在第一栅极上的发光层层，并由第一或第二导电类型的含铟（In）的III族氮化物半导体形成，以及设置在发光层上用于防止铟从发光层蒸发的防蒸镀层。蒸发防止层由第二导电类型的未掺杂的磷化硼（BP） - 基础半导体形成。还公开了一种用于制造半导体发光器件的方法。

10. 发明授权

US06809346B2 Boron phosphide-based semiconductor light-emitting device, production method thereof, and light-emitting diode 失效
公开(公告)号：US06809346B2
公开(公告)日：2004-10-26
申请号：US10795302
申请日：2004-03-09
申请人： Takashi Udagawa
发明人： Takashi Udagawa
IPC分类号： H01L3300
CPC分类号： H01L33/30 , H01S5/32308
摘要： A boron-phosphide-based semiconductor light-emitting device having a semiconductor substrate of a first conduction type having, on its bottom surface, a bottom electrode; a first boron-phosphide-based semiconductor layer of a first conductive type provided on the substrate; a Group III-V compound semiconductor active layer provided on the first boron-phosphide-based semiconductor layer; a second boron-phosphide-based semiconductor layer of second conduction type provided on the active layer; and a top electrode provided on the surface of the second boron-phosphide-based semiconductor layer. The top electrode includes a lower electrode and an upper electrode, the lower electrode is in direct contact with the second boron-phosphide-based semiconductor layer and formed of a metal incapable of establishing ohmic contact with the second boron-phosphide-based semiconductor layer, and the upper electrode is provided on the lower electrode and formed of a metal capable of establishing ohmic contact with the second boron-phosphide-based semiconductor layer.

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