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1. 发明授权

US07696690B2 Short-wavelength light-emitting element arranged in a container with a window having a window board formed of a calcium fluoride crystals 失效
标题翻译：短波长发光元件配置在具有由氟化钙晶体形成的窗口板的窗口的容器中
公开(公告)号：US07696690B2
公开(公告)日：2010-04-13
申请号：US11166523
申请日：2005-06-24
申请人： Kazutaka Terashima , Suzuka Nishimura
发明人： Kazutaka Terashima , Suzuka Nishimura
IPC分类号： H01J63/04
CPC分类号： H01L33/483 , G02B1/02 , H01L33/44 , H01L2924/0002 , H01S5/0222 , H01S5/02296 , H01L2924/00
摘要： A short-wavelength light-emitting element such as an ultraviolet light-emitting element or blue light-emitting element is arranged in a container which has a window with a window board formed of calcium fluoride crystals. Fluoride crystals are ones which contain either metal or metal halide, or both of them. In a production method of fluoride crystals in which the cavity of a crucible is filled with raw material powder and this crucible is heated in a vertical Bridgman furnace, a production method of fluoride crystals of the present invention is the one in which the shortest diameter of a cross section of the cavity of the crucible is small. In a crucible, whose cavity is filled with raw material powder, heated in a vertical Bridgman furnace to produce fluoride crystals, a crucible is the one in which the shortest diameter of a section of the cavity is small.
摘要翻译：在具有由氟化钙晶体形成的窗口板的窗口的容器中配置有紫外发光元件或蓝色发光元件等短波长发光元件。氟化物晶体是含有金属或金属卤化物或它们两者的晶体。在利用原料粉末填充坩埚的空腔的氟化物晶体的制造方法中，在垂直布里奇曼炉中对该坩埚进行加热，本发明的氟化物结晶的制造方法是将最短直径坩埚的空腔的横截面小。在坩埚中填充有原料粉末的坩埚，在垂直的Bridgman炉中加热以产生氟化物晶体，坩埚是空腔部分的最短直径小的坩埚。

2. 发明申请

US20100297786A1 Method for Manufacturing Compound Semiconductor and Apparatus for Manufacturing the Same 审中-公开
标题翻译：制造复合半导体的方法及其制造方法
公开(公告)号：US20100297786A1
公开(公告)日：2010-11-25
申请号：US12225420
申请日：2007-03-20
申请人： Kazutaka Terashima , Suzuka Nishimura , Hirosi Nagayoshi , Hiroshi Kawamura , Kazuhiro Haga
发明人： Kazutaka Terashima , Suzuka Nishimura , Hirosi Nagayoshi , Hiroshi Kawamura , Kazuhiro Haga
IPC分类号： H01L21/20 , B05C13/02 , H01L21/66
CPC分类号： H01L21/67207 , C30B25/08 , H01L21/02381 , H01L21/02461 , H01L21/0254 , H01L21/67196
摘要： The present invention provides a method for manufacturing a compound semiconductor, which can improve a quality of each of thin film layers constituting a laminate structure.Each of first and second thin film layers is formed by growing a crystal of each thin film layer one over another on a silicon substrate 2 in first and second vapor deposition chambers 6a and 6b for exclusive use, corresponding to the respective thin film layers. As this crystal growth is carried out under conditions under which nothing other than raw gas materials used therein or those derived therefrom, such as stuck materials, precipitates, etc., exists in the first and second vapor deposition chambers 6a and 6b, a decrease in quality of the second thin film layer can be prevented because an unexpected reaction between the raw gas materials used for the first and second thin film layers, etc. can be suppressed. Moreover, a conveyor space 35 extending between the first vapor deposition chamber 6a and the second vapor deposition chamber 6b, in which the silicon substrate 2 is conveyed, is disposed under an atmosphere of nitrogen gas or in a state of vacuum for suppressing oxidation of the thin film layer, thereby suppressing the oxidation of the first thin film layer constituting the outermost layer of the laminated thin film layers to form oxides.
摘要翻译：本发明提供一种化合物半导体的制造方法，其能够提高构成层叠结构的薄膜层的质量。第一和第二薄膜层中的每一个通过在对应于各个薄膜层的第一和第二蒸镀室6a和6b中的硅基板2上逐个生长每个薄膜层的晶体而形成。由于该晶体生长是在第一和第二蒸镀室6a，6b中存在的情况下，在其中使用的原料气体材料以外的其它原料或其衍生物，例如卡住材料，析出物等存在的条件下进行的，由于可以抑制用于第一和第二薄膜层等的原料气体材料之间的意想不到的反应，所以可以防止第二薄膜层的质量。此外，在第一蒸镀室6a和第二蒸镀室6b之间延伸有输送硅基板2的输送空间35配置在氮气氛下，也可以在真空状态下，抑制氧化从而抑制构成层叠薄膜层的最外层的第一薄膜层的氧化，形成氧化物。

3. 发明申请

US20060038194A1 Light-emitting element device, light-receiving element device, optical device, fluoride crystals, production method of fluoride crystals, and crucible 失效
标题翻译：发光元件装置，受光元件装置，光学装置，氟化物晶体，氟化物晶体的制造方法以及坩埚
公开(公告)号：US20060038194A1
公开(公告)日：2006-02-23
申请号：US11166523
申请日：2005-06-24
申请人： Kazutaka Terashima , Suzuka Nishimura
发明人： Kazutaka Terashima , Suzuka Nishimura
IPC分类号： H01L33/00 , H01L29/24
CPC分类号： H01L33/483 , G02B1/02 , H01L33/44 , H01L2924/0002 , H01S5/0222 , H01S5/02296 , H01L2924/00
摘要： In the present invention, a short-wavelength light-emitting element such as an ultraviolet light-emitting element or blue light-emitting element is arranged in a container which has a window with a window board formed of calcium fluoride crystals. According to the present invention, it is possible to obtain a reliable light-emitting element device. Fluoride crystals of the present invention are ones which contain either metal or metal halide, or both of them. In a production method of fluoride crystals in which the cavity of a crucible is filled with raw material powder and this crucible is heated in a vertical Bridgman furnace, a production method of fluoride crystals of the present invention is the one in which the shortest diameter of a cross section of the cavity of the crucible is small. In a crucible, whose cavity is filled with raw material powder, heated in a vertical Bridgman furnace to produce fluoride crystals, a crucible of the present invention is the one in which the shortest diameter of a section of the cavity is small.
摘要翻译：在本发明中，将紫外发光元件或蓝色发光元件等短波长发光元件配置在具有由氟化钙晶体形成的窗口板的窗口的容器中。根据本发明，可以获得可靠的发光元件装置。本发明的氟化物晶体是含有金属或金属卤化物或它们两者的氟化物晶体。在利用原料粉末填充坩埚的空腔的氟化物晶体的制造方法中，在垂直布里奇曼炉中对该坩埚进行加热，本发明的氟化物结晶的制造方法是将最短直径坩埚的空腔的横截面小。在坩埚中填充有原料粉末的坩埚，在垂直布里奇曼炉中加热以产生氟化物晶体，本发明的坩埚是其一部分的最小直径小的坩埚。

4. 发明授权

US06194744B1 Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer 有权
标题翻译：生长III族氮化物半导体晶体层的方法和掺入III族氮化物半导体晶体层的半导体器件
公开(公告)号：US06194744B1
公开(公告)日：2001-02-27
申请号：US09500450
申请日：2000-02-09
申请人： Takashi Udagawa , Kazutaka Terashima , Suzuka Nishimura , Takuji Tsuzaki
发明人： Takashi Udagawa , Kazutaka Terashima , Suzuka Nishimura , Takuji Tsuzaki
IPC分类号： H01L3300
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02458 , H01L21/02461 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0262
摘要： A method of growing a group III nitride semiconductor crystal layer includes a step of growing a first buffer layer composed of boron phosphide on a silicon single crystal substrate by a vapor phase growth method at a temperature of not lower than 200° C. and not higher than 700° C., a step of growing a second buffer layer composed of boron phosphide on the first buffer layer by a vapor phase growth method at a temperature of not lower than 750° C. and not higher than 1200° C., and a step of growing a crystal layer composed of group III nitride semiconductor crystal represented by general formula AlpGaqInrN (where 0≦p≦1, 0≦q≦1, 0≦r≦1, p+q+r=1) on the second buffer layer by a vapor phase growth method. A semiconductor device incorporating the group III nitride semiconductor crystal layer is provided.
摘要翻译：生长III族氮化物半导体晶体层的方法包括在不低于200℃的温度下通过气相生长法在硅单晶衬底上生长由磷化磷构成的第一缓冲层的步骤，而不是更高在700℃以上的温度下，在不低于750℃且不高于1200℃的温度下，通过气相生长法在第一缓冲层上生长由磷化磷构成的第二缓冲层的步骤，以及生长由通式AlpGaqInrN表示的III族氮化物半导体晶体构成的晶体层的步骤（其中0≤p≤1,0<= q <=1,0,0≤r<= 1，p + q + r = 1）通过气相生长法在第二缓冲层上。提供了结合III族氮化物半导体晶体层的半导体器件。

5. 发明授权

US6069021A Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer 有权
标题翻译：生长III族氮化物半导体晶体层的方法和掺入III族氮化物半导体晶体层的半导体器件
公开(公告)号：US6069021A
公开(公告)日：2000-05-30
申请号：US270749
申请日：1999-03-17
申请人： Kazutaka Terashima , Suzuka Nishimura , Takuji Tsuzaki , Takashi Udagawa
发明人： Kazutaka Terashima , Suzuka Nishimura , Takuji Tsuzaki , Takashi Udagawa
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02458 , H01L21/02461 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0262
摘要： A method of growing a group III nitride semiconductor crystal layer includes a step of growing a first buffer layer composed of boron phosphide on a silicon single crystal substrate by a vapor phase growth method at a temperature of not lower than 200.degree. C. and not higher than 700.degree. C., a step of growing a second buffer layer composed of boron phosphide on the first buffer layer by a vapor phase growth method at a temperature of not lower than 750.degree. C. and not higher than 1200.degree. C., and a step of growing a crystal layer composed of group III nitride semiconductor crystal represented by general formula Al.sub.p Ga.sub.q In.sub.r N (where 0.ltoreq.p.ltoreq.1, 0.ltoreq.q.ltoreq.1, 0.ltoreq.r.ltoreq.1, p+q+r=1) on the second buffer layer by a vapor phase growth method. A semiconductor device incorporating the group III nitride semiconductor crystal layer is provided.
摘要翻译：生长III族氮化物半导体晶体层的方法包括以下步骤：在不低于200℃的温度下通过气相生长法在硅单晶衬底上生长由磷化磷构成的第一缓冲层，而不是更高在700℃以上的温度下，在不低于750℃且不高于1200℃的温度下，通过气相生长法在第一缓冲层上生长由磷化磷构成的第二缓冲层的步骤，以及生长由通式AlpGaqInrN表示的III族氮化物半导体晶体构成的晶体层的步骤（其中0≤p≤1,0≤i≤1,0≤r≤1 ，p + q + r = 1）通过气相生长法在第二缓冲层上。提供了结合III族氮化物半导体晶体层的半导体器件。

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