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1. 发明申请

US20110236754A1 SECONDARY BATTERY AND METHOD FOR FORMING ELECTRODE OF SECONDARY BATTERY 有权
标题翻译：用于形成二次电池电极的二次电池和方法
公开(公告)号：US20110236754A1
公开(公告)日：2011-09-29
申请号：US13050978
申请日：2011-03-18
申请人： Kazutaka KURIKI , Tamae MORIWAKA , Satoshi MURAKAMI
发明人： Kazutaka KURIKI , Tamae MORIWAKA , Satoshi MURAKAMI
IPC分类号： H01M4/134 , H01M4/1395
CPC分类号： H01M4/134 , H01M4/0428 , H01M4/0471 , H01M4/1395 , H01M4/38 , H01M4/661 , H01M4/662 , H01M4/667 , Y10T29/49108 , Y10T29/49115
摘要： An object is to provide a secondary battery having excellent charge-discharge cycle characteristics. A secondary battery including an electrode containing silicon or a silicon compound is provided, in which the electrode is provided with a layer containing silicon or a silicon compound over a layer of a metal material; a mixed layer of the metal material and the silicon is provided between the metal material layer and the layer containing silicon or a silicon compound; the metal material has higher oxygen affinity than that of ions which give and receive electric charges in the secondary battery; and an oxide of the metal material does not have an insulating property. The ions which give and receive electric charges are alkali metal ions or alkaline earth metal ions.
摘要翻译：目的在于提供具有优异的充放电循环特性的二次电池。提供了包括含有硅或硅化合物的电极的二次电池，其中电极在金属材料层上设置有含硅或硅化合物的层; 在金属材料层和含硅或硅化合物的层之间设置金属材料和硅的混合层; 金属材料具有比在二次电池中产生和接收电荷的离子更高的氧亲和力; 金属材料的氧化物不具有绝缘性。产生和接收电荷的离子是碱金属离子或碱土金属离子。

2. 发明申请

US20110236753A1 SECONDARY BATTERY AND METHOD FOR MANUFACTURING ELECTRODE OF THE SAME 有权
标题翻译：二次电池及其制造方法
公开(公告)号：US20110236753A1
公开(公告)日：2011-09-29
申请号：US13044172
申请日：2011-03-09
申请人： Kazutaka KURIKI , Tamae MORIWAKA
发明人： Kazutaka KURIKI , Tamae MORIWAKA
IPC分类号： H01M4/58 , H01M4/26
CPC分类号： H01M4/134 , H01M4/0428 , H01M4/0471 , H01M4/1395 , H01M4/38 , H01M4/661 , H01M4/662 , H01M4/667 , Y10T29/49108 , Y10T29/49115
摘要： A secondary battery to be provided includes an electrode including silicon or a silicon compound, and the electrode includes, for example, a current collector formed using metal and a silicon film as an active material provided over the current collector. The hydrogen concentration in the silicon film of the electrode may be higher than or equal to 1.0×1018 cm−3 and lower than or equal to 1.0×1021 cm−3. Such a silicon film is formed over a current collector by a plasma CVD method or the like for example, and hydrogen is contained as little as possible in the silicon film, which is preferable. In order to contain hydrogen as little as possible in the silicon film, the silicon film may be formed over the current collector under a high temperature environment.
摘要翻译：要提供的二次电池包括含硅或硅化合物的电极，并且该电极包括例如使用金属形成的集电体和设置在集电体上的活性材料的硅膜。电极的硅膜中的氢浓度可以高于或等于1.0×1018cm-3且小于或等于1.0×1021cm-3。这样的硅膜例如通过等离子体CVD法等在集电体上形成，并且在硅膜中尽可能少地含有氢，这是优选的。为了在硅膜中尽可能少地含有氢，可以在高温环境下在集电体上形成硅膜。

3. 发明申请

US20110212363A1 POWER STORAGE SYSTEM AND MANUFACTURING METHOD THEREFOR AND SECONDARY BATTERY AND CAPACITOR 审中-公开
标题翻译：电力储存系统及其二次电池和电容器的制造方法
公开(公告)号：US20110212363A1
公开(公告)日：2011-09-01
申请号：US13033877
申请日：2011-02-24
申请人： Shunpei YAMAZAKI , Tamae MORIWAKA , Kazutaka KURIKI , Mikio YUKAWA
发明人： Shunpei YAMAZAKI , Tamae MORIWAKA , Kazutaka KURIKI , Mikio YUKAWA
IPC分类号： H01M10/26 , H01G9/00 , H01M4/48 , H01M4/505 , H01G9/042 , H01M4/26 , B82Y99/00
CPC分类号： H01G11/26 , H01G11/28 , H01G11/32 , H01G11/46 , H01M4/131 , H01M4/134 , H01M4/1395 , H01M4/366 , H01M4/587 , H01M4/62 , H01M10/0525 , H01M10/0561 , H01M2004/021 , Y02E60/13 , Y10T29/417 , Y10T29/49108 , Y10T29/49115
摘要： The present invention relates to a power storage system including a negative electrode which has a crystalline silicon film provided as a negative electrode active material on the surface of a current collector and contains a conductive oxide in a surface layer section of the crystalline silicon film. Alternatively, the present invention relates to a method for manufacturing a power storage system, which includes the step of forming an amorphous silicon film on a current collector, adding a catalytic element for promoting crystallization of the amorphous silicon, onto a surface of the amorphous silicon film, heating the amorphous silicon film with the catalytic element added to crystallize the amorphous silicon film and thereby form a crystalline silicon film, and using the crystalline silicon film as a negative electrode active material layer.
摘要翻译：本发明涉及一种蓄电系统，其包括负极，该负极具有在集电体的表面上设置为负极活性物质的结晶硅膜，并且在结晶硅膜的表层部分中含有导电氧化物。或者，本发明涉及一种用于制造蓄电系统的方法，其包括在集电器上形成非晶硅膜的步骤，将非晶硅的结晶的催化元素添加到非晶硅的表面上加热非晶硅膜，加入催化剂元素使非晶硅膜结晶，从而形成结晶硅膜，并使用结晶硅膜作为负极活性物质层。

4. 发明申请

US20110300445A1 POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：电力存储装置及其制造方法
公开(公告)号：US20110300445A1
公开(公告)日：2011-12-08
申请号：US13111079
申请日：2011-05-19
申请人： Satoshi MURAKAMI , Kazutaka KURIKI , Mikio YUKAWA
发明人： Satoshi MURAKAMI , Kazutaka KURIKI , Mikio YUKAWA
IPC分类号： H01M4/58 , C23C16/24 , H01G9/00 , H01M4/1395 , H01G9/042
CPC分类号： H01G11/24 , C23C16/24 , H01G11/30 , H01G11/46 , H01M4/0428 , H01M4/134 , H01M4/1395 , H01M4/48 , H01M4/52 , H01M4/661 , H01M10/0525 , H01M2220/20 , H01M2220/30 , Y02E60/122 , Y02E60/13 , Y02P70/54 , Y02T10/7022 , Y10T29/417 , Y10T29/49115
摘要： A power storage device which can have an improved performance such as higher discharge capacity and in which deterioration due to peeling of an active material layer or the like is difficult to occur, and a method for manufacturing the power storage device are provided. The power storage device includes a current collector, a mixed layer formed over the current collector, and a crystalline silicon layer which is formed over the mixed layer and functions as an active material layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions projecting over the crystalline silicon region. The whisker-like crystalline silicon region includes a protrusion having a bending or branching portion.
摘要翻译：能够提高放电容量等改善性能的蓄电装置，由于活性物质层等的剥离而导致的劣化难以发生，并且提供了蓄电装置的制造方法。蓄电装置包括集电体，在集电体上形成的混合层，以及形成在混合层上并用作活性物质层的晶体硅层。结晶硅层包括晶体硅区域和晶须状晶体硅区域，其包括在结晶硅区域上突出的多个突起。晶须状结晶硅区域包括具有弯曲或分支部分的突起。

5. 发明申请

US20120141866A1 POWER STORAGE DEVICE 有权
标题翻译：电源存储设备
公开(公告)号：US20120141866A1
公开(公告)日：2012-06-07
申请号：US13307045
申请日：2011-11-30
申请人： Kazutaka KURIKI , Nobuhiro Inoue , Kiyofumi Ogino
发明人： Kazutaka KURIKI , Nobuhiro Inoue , Kiyofumi Ogino
IPC分类号： H01M4/66 , H01M10/02 , H01G9/032
CPC分类号： H01M4/366 , H01G11/06 , H01G11/50 , H01G11/68 , H01G11/72 , H01M4/382 , H01M4/386 , H01M4/661 , H01M10/0525 , H01M10/0562 , H01M2004/027 , Y02E60/122 , Y02E60/13 , Y02T10/7022
摘要： A power storage device which has improved performance such as higher discharge capacity and in which deterioration due to peeling or the like of an active material layer is less likely to be caused is provided. In an electrode for the power storage device, phosphorus-doped amorphous silicon is used for the active material layer over a current collector as a material that can be alloyed with lithium, and niobium oxide is deposited over the active material layer as a layer containing niobium. Accordingly, the capacity of the power storage device can be increased and the cycle characteristics and the charge-discharge efficiency can be improved.
摘要翻译：提供了一种具有改善的性能的蓄电装置，例如较高的放电容量，并且由于活性材料层的剥离等而导致的劣化不大可能。在蓄电装置的电极中，作为可与锂合金化的材料，在集电体上使用磷掺杂非晶硅作为活性物质层，在活性物质层上沉积氧化铌作为含有铌的层。因此，能够提高蓄电装置的容量，能够提高循环特性和充放电效率。

6. 发明申请

US20110305950A1 POWER STORAGE DEVICE 有权
标题翻译：电源存储设备
公开(公告)号：US20110305950A1
公开(公告)日：2011-12-15
申请号：US13153503
申请日：2011-06-06
申请人： Kazutaka KURIKI , Kiyofumi OGINO , Tomokazu YOKOI , Makoto ISHIKAWA , Toshihiko TAKEUCHI
发明人： Kazutaka KURIKI , Kiyofumi OGINO , Tomokazu YOKOI , Makoto ISHIKAWA , Toshihiko TAKEUCHI
IPC分类号： H01M4/64 , H01G9/042 , H01M10/04
CPC分类号： H01G11/26 , H01M4/134 , H01M4/661 , H01M4/667 , H01M10/0525 , H01M2004/025 , Y02E60/122 , Y02E60/13
摘要： An electrode for a power storage device with less deterioration due to charge and discharge and a power storage device using the electrode are provided. In the electrode for a power storage device and the power storage device, a region including a metal element which functions as a catalyst is selectively provided over a current collector, and then, an active material layer is formed. By selectively providing the region including the metal element, a whisker can be effectively generated in the active material layer over the current collector, and the whisker generation region can be controlled. Accordingly, the discharge capacity can be increased and the cycle characteristics can be improved.
摘要翻译：提供了一种用于蓄电装置的放电劣化少的电极和使用该电极的蓄电装置。在蓄电装置用电极和蓄电装置中，在集电体上选择性地设置作为催化剂的金属元素的区域，形成活性物质层。通过选择性地提供包括金属元素的区域，可以在集电体上的有源材料层中有效地产生晶须，并且可以控制晶须产生区域。因此，可以提高放电容量，并且可以提高循环特性。

7. 发明申请

US20110269301A1 MANUFACTURING METHOD OF SINGLE CRYSTAL SEMICONDUCTOR FILM AND MANUFACTURING METHOD OF ELECTRODE 有权
标题翻译：单晶半导体膜的制造方法及电极的制造方法
公开(公告)号：US20110269301A1
公开(公告)日：2011-11-03
申请号：US13092249
申请日：2011-04-22
申请人： Sho KATO , Kazutaka KURIKI
发明人： Sho KATO , Kazutaka KURIKI
IPC分类号： H01L21/20
CPC分类号： H01L21/76251
摘要： To provide a method of obtaining a single crystal semiconductor film by a method that is simple and low-cost. A single crystal semiconductor film 11 having compression stress is formed over a surface of a single crystal semiconductor substrate 10 by a vapor phase epitaxial growth method, a film having tensile stress (for example, a thermo-setting resin film 12) is formed over a surface of the single crystal semiconductor film 11, and the single crystal semiconductor substrate 10 and the single crystal semiconductor film 11 are separated from each other by a separation step in which force is applied to the single crystal semiconductor film 11, thereby obtaining a single crystal semiconductor film. Note that as the thermo-setting resin film 12, an epoxy resin film can be used, for example.
摘要翻译：提供通过简单且低成本的方法获得单晶半导体膜的方法。通过气相外延生长法在单晶半导体衬底10的表面上形成具有压应力的单晶半导体膜11，在其上形成具有拉伸应力的膜（例如，热固性树脂膜12）通过对单晶半导体膜11施加力的分离工序将单晶半导体膜11的表面，单晶半导体基板10和单晶半导体膜11分离，得到单晶半导体膜。另外，作为热固性树脂膜12，例如可以使用环氧树脂膜。

8. 发明申请

US20130052528A1 POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING ELECTRODE 审中-公开
标题翻译：电力储存装置及制造电极的方法
公开(公告)号：US20130052528A1
公开(公告)日：2013-02-28
申请号：US13596175
申请日：2012-08-28
申请人： Kazutaka KURIKI , Kiyofumi OGINO , Nobuhiro INOUE
发明人： Kazutaka KURIKI , Kiyofumi OGINO , Nobuhiro INOUE
IPC分类号： H01M4/583 , H01M4/04 , H01M4/38 , H01G9/00 , B82Y30/00
CPC分类号： H01M4/386 , H01G11/30 , H01G11/50 , H01M4/134 , H01M4/387 , H01M10/0525 , Y02E60/13
摘要： An electrode and a power storage device each of which achieves better charge-discharge cycle characteristics and is less likely to deteriorate owing to separation of an active material, or the like are manufactured. As the electrode for the power storage device, an electrode including a current collector and an active material layer that is over the current collector and includes a particle containing niobium oxide and a granular active material is used, whereby the charge-discharge cycle characteristics of the power storage device can be improved. Moreover, contact between the granular active material and the particle containing niobium oxide makes the granular active material physically fixed; accordingly, deterioration due to expansion and contraction of the active material which occur along with charge and discharge of the power storage device, such as powdering of the active material layer or its separation from the current collector, can be suppressed.
摘要翻译：制造各自实现更好的充放电循环特性并且由于活性物质的分离等而不太可能劣化的电极和蓄电装置。作为蓄电装置的电极，使用包含集电体的电极和在集电体上方的包含含有铌氧化物的颗粒和粒状活性物质的活性物质层，由此，蓄电装置可以改善。此外，颗粒状活性物质与含有氧化铌的粒子的接触使粒状活性物质物理固定; 因此，可以抑制由于蓄电装置的充放电而发生的活性物质的膨胀和收缩的劣化，例如活性物质层的粉化或其与集电体的分离。

9. 发明申请

US20110236755A1 ENERGY STORAGE DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：能源储存装置及其制造方法
公开(公告)号：US20110236755A1
公开(公告)日：2011-09-29
申请号：US13050980
申请日：2011-03-18
申请人： Kiyofumi OGINO , Kazutaka KURIKI
发明人： Kiyofumi OGINO , Kazutaka KURIKI
IPC分类号： H01M4/58 , H01M4/64 , H01M4/66 , H01G9/00 , H01G9/035 , H01G9/155
CPC分类号： H01M10/0525 , H01G11/12 , H01G11/28 , H01G11/50 , H01G11/68 , H01G11/70 , H01G11/72 , H01G11/74 , H01G11/84 , H01M4/0404 , H01M4/134 , H01M4/1395 , H01M4/667 , H01M4/70 , H01M10/0413 , H01M10/0459 , H01M10/0583 , H01M2004/025 , Y02E60/13 , Y10T29/417 , Y10T29/49108 , Y10T29/49115
摘要： An electrode of an energy storage device with less deterioration by charge and discharge can be manufactured. In addition, an energy storage device which has large capacity and high endurance can be manufactured. A manufacturing method of an electrode of an energy storage device is provided in which a high-wettability regions and a low-wettability region are formed at a surface of a current collector, a composition containing silicon, germanium, or tin is discharged to the high-wettability regions and then baked to form separate active materials over a surface of the current collector. Thus, an electrode of an energy storage device with less deterioration due to charge and discharge can be manufactured.
摘要翻译：可以制造具有较少的充放电劣化的储能装置的电极。另外，能够制造容量大，耐久性高的储能装置。提供一种储能装置的电极的制造方法，其中在集电体的表面形成有高润湿性区域和低润湿性区域，含有硅，锗或锡的组合物排出到高 - 润湿性区域，然后烘烤以在集电器的表面上形成分离的活性材料。因此，可以制造由于充放电而具有较小劣化的储能装置的电极。

10. 发明申请

US20110236567A1 METHOD OF FORMING ELECTRODE 审中-公开
标题翻译：形成电极的方法
公开(公告)号：US20110236567A1
公开(公告)日：2011-09-29
申请号：US13038413
申请日：2011-03-02
申请人： Kazutaka KURIKI
发明人： Kazutaka KURIKI
IPC分类号： B05D5/12 , B05D3/00 , C23C14/36 , C23C14/06
CPC分类号： H01G11/44 , H01G11/28 , H01G11/86 , Y02E60/13
摘要： Provided are a method of forming a carbon film which has a reduced number of steps and improved productivity without needing a high-temperature process, and a method of forming an electrode which does not need a binder. A fluororesin film is formed on a surface of a collector, and a surface of the fluororesin film is contacted with an alkali metal such as lithium to perform defluorination and then washed with acid. By this processing, lithium (Li) chemically reacts with fluorine (F) in the fluororesin film, and lithium fluoride (LiF) is generated. Consequently, the fluororesin film is defluorinated, whereby an electrode having a carbon film is formed.
摘要翻译：提供一种形成碳膜的方法，其具有减少的步骤数量和提高的生产率而不需要高温处理，以及形成不需要粘合剂的电极的方法。在集电体的表面上形成氟树脂膜，使氟树脂膜的表面与锂等碱金属接触，进行脱氟，然后用酸洗。通过该处理，锂（Li）在氟树脂膜中与氟（F）发生化学反应，产生氟化锂（LiF）。因此，氟树脂膜被脱氟，由此形成具有碳膜的电极。

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