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1. 发明授权

US09006021B2 Amorphous silicon film formation method and amorphous silicon film formation apparatus 有权
标题翻译：非晶硅膜形成方法和非晶硅膜形成装置
公开(公告)号：US09006021B2
公开(公告)日：2015-04-14
申请号：US13094043
申请日：2011-04-26
申请人： Kazuhide Hasebe , Hiroki Murakami , Akinobu Kakimoto
发明人： Kazuhide Hasebe , Hiroki Murakami , Akinobu Kakimoto
IPC分类号： H01L21/00 , C23C16/24 , C23C16/02
CPC分类号： H01L21/76843 , C23C16/0272 , C23C16/24 , C23C16/52 , H01L21/76876
摘要： The amorphous silicon film formation method includes forming a seed layer on the surface of a base by heating the base and flowing aminosilane-based gas onto the heated base; and forming an amorphous silicon film on the seed layer by heating the base, supplying silane-based gas containing no amino group onto the seed layer on the surface of the heated base, and thermally decomposing the silane-based gas containing no amino group.
摘要翻译：非晶硅膜形成方法包括通过加热基底并将氨基硅烷基气体流动到加热的基底上在基底的表面上形成籽晶层; 通过加热基底，在加热的基体的表面上的种子层上供给不含氨基的硅烷系气体，将不含氨基的硅烷类气体进行热分解，在种子层上形成非晶硅膜。

2. 发明授权

US08586448B2 Method and apparatus for forming silicon film 有权
标题翻译：用于形成硅膜的方法和装置
公开(公告)号：US08586448B2
公开(公告)日：2013-11-19
申请号：US13537622
申请日：2012-06-29
申请人： Akinobu Kakimoto , Satoshi Takagi , Kazuhide Hasebe
发明人： Akinobu Kakimoto , Satoshi Takagi , Kazuhide Hasebe
IPC分类号： H01L21/76
CPC分类号： C23C16/24 , C23C16/045 , C23C16/45523 , H01L21/28556 , H01L21/32055 , H01L21/76876 , H01L21/76877
摘要： Provided is a method and apparatus for forming a silicon film, which are capable of suppressing generation of a void or seam. The method includes performing a first film-forming process, performing an etching process, performing a doping process, and performing a second film-forming process. In the first film-forming process, a non-doped silicon film that is not doped with an impurity is formed so as to embed a groove of an object. In the etching process, the non-doped silicon film formed via the first film-forming process is etched. In the doping process, the non-doped silicon film etched via the etching process is doped with an impurity. In the second film-forming process, an impurity-doped silicon film is formed so as to embed the silicon film doped via the doping process.
摘要翻译：提供一种能够抑制空隙或接缝的产生的用于形成硅膜的方法和装置。该方法包括进行第一成膜处理，进行蚀刻处理，进行掺杂工序，以及进行第二成膜工序。在第一成膜工艺中，形成未掺杂有杂质的非掺杂硅膜，从而嵌入物体的凹槽。在蚀刻工艺中，蚀刻经由第一成膜工艺形成的非掺杂硅膜。在掺杂工艺中，通过蚀刻工艺蚀刻的非掺杂硅膜掺杂有杂质。在第二成膜工艺中，形成杂质掺杂硅膜，以便嵌入通过掺杂工艺掺杂的硅膜。

3. 发明申请

US20120267340A1 FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS 有权
标题翻译：膜沉积方法和膜沉积装置
公开(公告)号：US20120267340A1
公开(公告)日：2012-10-25
申请号：US13420723
申请日：2012-03-15
申请人： Akinobu KAKIMOTO , Satoshi Takagi , Toshiyuki Ikeuchi , Katsuhiko Komori , Kazuhide Hasebe
发明人： Akinobu KAKIMOTO , Satoshi Takagi , Toshiyuki Ikeuchi , Katsuhiko Komori , Kazuhide Hasebe
IPC分类号： B44C1/22 , B05C11/00
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/45546 , H01J37/32091 , H01J37/3244 , H01J37/32779 , H01L21/02337 , H01L21/31116 , H01L21/67109
摘要： A disclosed film deposition method includes steps of loading plural substrates each of which includes a pattern including a concave part in a reaction chamber in the form of shelves; depositing a silicon oxide film on the plural substrates by supplying a silicon-containing gas and an oxygen-containing gas to the reaction chamber; etching the silicon oxide film deposited on the plural substrates in the step of depositing by supplying a fluorine-containing gas and an ammonia gas to the reaction chamber; and alternately repeating the step of depositing and the step of etching.
摘要翻译：所公开的膜沉积方法包括加载多个基板的步骤，每个基板在支架的形式的反应室中包括包括凹部的图案; 通过向所述反应室供给含硅气体和含氧气体，在所述多个基板上沉积氧化硅膜; 在通过向反应室供给含氟气体和氨气的沉积步骤中蚀刻沉积在多个基板上的氧化硅膜; 并且交替地重复沉积步骤和蚀刻步骤。

4. 发明申请

US20130005142A1 METHOD AND APPARATUS FOR FORMING SILICON FILM 有权
标题翻译：用于形成硅膜的方法和装置
公开(公告)号：US20130005142A1
公开(公告)日：2013-01-03
申请号：US13537622
申请日：2012-06-29
申请人： Akinobu Kakimoto , Satoshi Takagi , Kazuhide Hasebe
发明人： Akinobu Kakimoto , Satoshi Takagi , Kazuhide Hasebe
IPC分类号： H01L21/283
CPC分类号： C23C16/24 , C23C16/045 , C23C16/45523 , H01L21/28556 , H01L21/32055 , H01L21/76876 , H01L21/76877
摘要： Provided is a method and apparatus for forming a silicon film, which are capable of suppressing generation of a void or seam. The method includes performing a first film-forming process, performing an etching process, performing a doping process, and performing a second film-forming process. In the first film-forming process, a non-doped silicon film that is not doped with an impurity is formed so as to embed a groove of an object. In the etching process, the non-doped silicon film formed via the first film-forming process is etched. In the doping process, the non-doped silicon film etched via the etching process is doped with an impurity. In the second film-forming process, an impurity-doped silicon film is formed so as to embed the silicon film doped via the doping process.
摘要翻译：提供一种能够抑制空隙或接缝的产生的用于形成硅膜的方法和装置。该方法包括进行第一成膜处理，进行蚀刻处理，进行掺杂工序，以及进行第二成膜工序。在第一成膜工艺中，形成未掺杂有杂质的非掺杂硅膜，从而嵌入物体的凹槽。在蚀刻工艺中，蚀刻经由第一成膜工艺形成的非掺杂硅膜。在掺杂工艺中，通过蚀刻工艺蚀刻的非掺杂硅膜掺杂有杂质。在第二成膜工艺中，形成杂质掺杂硅膜，以便嵌入通过掺杂工艺掺杂的硅膜。

5. 发明授权

US09005459B2 Film deposition method and film deposition apparatus 有权
标题翻译：膜沉积法和成膜装置
公开(公告)号：US09005459B2
公开(公告)日：2015-04-14
申请号：US13420723
申请日：2012-03-15
申请人： Akinobu Kakimoto , Satoshi Takagi , Toshiyuki Ikeuchi , Katsuhiko Komori , Kazuhide Hasebe
发明人： Akinobu Kakimoto , Satoshi Takagi , Toshiyuki Ikeuchi , Katsuhiko Komori , Kazuhide Hasebe
IPC分类号： B44C1/22 , B05C11/00 , H01L21/02 , C23C16/04 , C23C16/455 , H01J37/32 , H01L21/311 , H01L21/67
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/45546 , H01J37/32091 , H01J37/3244 , H01J37/32779 , H01L21/02337 , H01L21/31116 , H01L21/67109
摘要： A disclosed film deposition method includes steps of loading plural substrates each of which includes a pattern including a concave part in a reaction chamber in the form of shelves; depositing a silicon oxide film on the plural substrates by supplying a silicon-containing gas and an oxygen-containing gas to the reaction chamber; etching the silicon oxide film deposited on the plural substrates in the step of depositing by supplying a fluorine-containing gas and an ammonia gas to the reaction chamber; and alternately repeating the step of depositing and the step of etching.
摘要翻译：所公开的膜沉积方法包括加载多个基板的步骤，每个基板在支架的形式的反应室中包括包括凹部的图案; 通过向所述反应室供给含硅气体和含氧气体，在所述多个基板上沉积氧化硅膜; 在通过向反应室供给含氟气体和氨气的沉积步骤中蚀刻沉积在多个基板上的氧化硅膜; 并且交替地重复沉积步骤和蚀刻步骤。

6. 发明授权

US08945339B2 Film formation apparatus 有权
标题翻译：成膜装置
公开(公告)号：US08945339B2
公开(公告)日：2015-02-03
申请号：US13283869
申请日：2011-10-28
申请人： Akinobu Kakimoto , Katsuhiko Komori , Kazuhide Hasebe
发明人： Akinobu Kakimoto , Katsuhiko Komori , Kazuhide Hasebe
IPC分类号： C23C16/52 , C23C16/455 , C23C16/22 , H01L21/306 , C23F1/00 , H01L21/02 , C23C16/02 , C23C16/04 , C23C16/24 , H01L21/285 , H01L21/3065 , H01L21/3213 , H01L21/768 , C23C16/458 , C23C16/46
CPC分类号： H01L21/02057 , C23C16/0272 , C23C16/045 , C23C16/24 , H01L21/02425 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/28525 , H01L21/28556 , H01L21/3065 , H01L21/32135 , H01L21/76805 , H01L21/76814 , H01L21/76876 , H01L21/76877 , H01L29/41766
摘要： A film formation apparatus includes a gas supply mechanism for supplying an aminosilane-based gas, and a silane-based gas that does not include an amino group. Processes of forming a seed layer on a surface of the insulation film having the opening reaching the conductive substance and on a bottom surface of the opening by supplying the aminosilane-based gas into the process chamber, and forming a silicon film on the seed layer by supplying the silane-based gas that does not include the amino group into the process chamber, are sequentially performed in the process chamber.
摘要翻译：成膜装置包括用于供给氨基硅烷气体的气体供给机构和不包含氨基的硅烷系气体。在具有开口到达导电物质的绝缘膜的表面上和在开口的底面上形成种子层的工艺，通过将氨基硅烷基气体供应到处理室中，并通过在晶种层上形成硅膜将不含氨基的硅烷类气体供给到处理室中，在处理室中依次进行。

7. 发明授权

US08728957B2 Thin film formation method and film formation apparatus 有权
标题翻译：薄膜形成方法和成膜装置
公开(公告)号：US08728957B2
公开(公告)日：2014-05-20
申请号：US13095503
申请日：2011-04-27
申请人： Kazuhide Hasebe , Akinobu Kakimoto
发明人： Kazuhide Hasebe , Akinobu Kakimoto
IPC分类号： H01L21/18 , C23C16/52
CPC分类号： H01L21/02636 , C23C16/22 , C23C16/24 , C23C16/45525 , C23C16/481 , H01L21/02425 , H01L21/0243 , H01L21/0245 , H01L21/02491 , H01L21/02502 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02592 , H01L21/0262
摘要： A thin film formation method to form a silicon film containing an impurity on a surface of an object to be processed in a process chamber that allows vacuum exhaust includes alternately and repeatedly performing a first gas supply process in which a silane-based gas composed of silicon and hydrogen is supplied into the process chamber in a state that the silane-based gas is adsorbed onto the surface of the object to be processed and a second gas supply process in which an impurity-containing gas is supplied into the process chamber, to form an amorphous silicon film containing an impurity. Accordingly, an amorphous silicon film containing an impurity having good filling characteristics can be formed even at a relatively low temperature.
摘要翻译：在允许真空排气的处理室中形成在待处理物体的表面上含有杂质的硅膜的薄膜形成方法包括交替地和反复地进行第一气体供给处理，其中由硅构成的硅烷系气体并且将氢气以硅烷类气体吸附在待处理物体的表面上的状态供给至处理室，第二气体供给工序将含有杂质的气体供给至处理室，形成含有杂质的非晶硅膜。因此，即使在相对较低的温度下也可以形成含有具有良好填充特性的杂质的非晶硅膜。

8. 发明申请

US20110269315A1 THIN FILM FORMATION METHOD AND FILM FORMATION APPARATUS 有权
标题翻译：薄膜形成方法和膜形成装置
公开(公告)号：US20110269315A1
公开(公告)日：2011-11-03
申请号：US13095503
申请日：2011-04-27
申请人： Kazuhide Hasebe , Akinobu Kakimoto
发明人： Kazuhide Hasebe , Akinobu Kakimoto
IPC分类号： H01L21/18 , C23C16/52 , C23C16/46 , C23C16/455 , C23C16/458
CPC分类号： H01L21/02636 , C23C16/22 , C23C16/24 , C23C16/45525 , C23C16/481 , H01L21/02425 , H01L21/0243 , H01L21/0245 , H01L21/02491 , H01L21/02502 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02592 , H01L21/0262
摘要： A thin film formation method to form a silicon film containing an impurity on a surface of an object to be processed in a process chamber that allows vacuum exhaust includes alternately and repeatedly performing a first gas supply process in which a silane-based gas composed of silicon and hydrogen is supplied into the process chamber in a state that the silane-based gas is adsorbed onto the surface of the object to be processed and a second gas supply process in which an impurity-containing gas is supplied into the process chamber, to form an amorphous silicon film containing an impurity. Accordingly, an amorphous silicon film containing an impurity having good filling characteristics can be formed even at a relatively low temperature.
摘要翻译：在允许真空排气的处理室中形成在待处理物体的表面上含有杂质的硅膜的薄膜形成方法包括交替地和反复地进行第一气体供给处理，其中由硅构成的硅烷系气体并且将氢气以硅烷类气体吸附在待处理物体的表面上的状态供给至处理室，第二气体供给工序将含有杂质的气体供给至处理室，形成含有杂质的非晶硅膜。因此，即使在相对较低的温度下也可以形成含有具有良好填充特性的杂质的非晶硅膜。

9. 发明授权

US08431494B2 Film formation method and film formation apparatus 有权
标题翻译：成膜方法和成膜装置
公开(公告)号：US08431494B2
公开(公告)日：2013-04-30
申请号：US13164280
申请日：2011-06-20
申请人： Hiroki Murakami , Kazuhide Hasebe , Kazuya Yamamoto , Toshihiko Takahashi , Daisuke Suzuki
发明人： Hiroki Murakami , Kazuhide Hasebe , Kazuya Yamamoto , Toshihiko Takahashi , Daisuke Suzuki
IPC分类号： H01L21/469 , H01L21/316
CPC分类号： C23C16/401 , C23C16/45523
摘要： A film formation method of forming a silicon oxide film on a surface of an object to be processed in a process chamber includes absorbing a seed gas comprising a silane-based gas on the surface of the object to be processed by supplying the seed gas into the process chamber, forming a silicon film having an impurity by supplying a silicon-containing gas as a material gas, and an addition gas including the impurity into the process chamber, and oxidizing the silicon film to convert the silicon film into the silicon oxide film. Accordingly, the silicon oxide film having the high density and the high stress is formed on the surface of the object to be processed.
摘要翻译：在处理室中的待处理物体的表面上形成氧化硅膜的成膜方法包括通过将种子气体供给到待处理物体的表面上来吸收包含硅烷类气体的种子气体处理室，通过将作为原料气体的含硅气体和含有该杂质的添加气体供给到处理室中，形成具有杂质的硅膜，氧化硅膜，将硅膜转换成氧化硅膜。因此，在待处理物体的表面上形成具有高密度和高应力的氧化硅膜。

10. 发明授权

US08349401B2 Film formation apparatus and method for using same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US08349401B2
公开(公告)日：2013-01-08
申请号：US12684283
申请日：2010-01-08
申请人： Jun Sato , Kiyotaka Kikuchi , Hiroki Murakami , Shigeru Nakajima , Kazuhide Hasebe
发明人： Jun Sato , Kiyotaka Kikuchi , Hiroki Murakami , Shigeru Nakajima , Kazuhide Hasebe
IPC分类号： B05D7/22 , C23C16/00
CPC分类号： C23C16/4405
摘要： A method for using a film formation apparatus includes performing a main cleaning process and a post cleaning process in this order inside a reaction chamber. The main cleaning process is arranged to supply a cleaning gas containing fluorine into the reaction chamber while exhausting gas from inside the reaction chamber, thereby etching a film formation by-product containing silicon. The post cleaning process is arranged to remove a silicon-containing fluoride generated by the main cleaning process and remaining inside the reaction chamber and to alternately repeat, a plurality of times, supplying an oxidizing gas into the reaction chamber to transform the silicon-containing fluoride into an intermediate product by oxidization, and supplying hydrogen fluoride gas into the reaction chamber while exhausting gas from inside the reaction chamber to remove the intermediate product by a reaction between the hydrogen fluoride gas and the intermediate product.
摘要翻译：使用成膜装置的方法包括在反应室内依次进行主清洗处理和后清洗处理。主要的清洗过程是在从反应室内部排出气体的同时，向反应室内供给含有氟的清洗气体，从而蚀刻含有硅的成膜副产物。后清洗处理被设置为除去由主要清洗过程产生的含氟氟化物，并保留在反应室内，并交替重复多次，将氧化气体供应到反应室中以将含硅氟化物通过氧化进入中间产物，并且在从反应室内排出气体的同时将氟化氢气体供应到反应室中，以通过氟化氢气体和中间产物之间的反应除去中间产物。

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