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1. 发明申请

US20120267340A1 FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS 有权
标题翻译：膜沉积方法和膜沉积装置
公开(公告)号：US20120267340A1
公开(公告)日：2012-10-25
申请号：US13420723
申请日：2012-03-15
申请人： Akinobu KAKIMOTO , Satoshi Takagi , Toshiyuki Ikeuchi , Katsuhiko Komori , Kazuhide Hasebe
发明人： Akinobu KAKIMOTO , Satoshi Takagi , Toshiyuki Ikeuchi , Katsuhiko Komori , Kazuhide Hasebe
IPC分类号： B44C1/22 , B05C11/00
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/45546 , H01J37/32091 , H01J37/3244 , H01J37/32779 , H01L21/02337 , H01L21/31116 , H01L21/67109
摘要： A disclosed film deposition method includes steps of loading plural substrates each of which includes a pattern including a concave part in a reaction chamber in the form of shelves; depositing a silicon oxide film on the plural substrates by supplying a silicon-containing gas and an oxygen-containing gas to the reaction chamber; etching the silicon oxide film deposited on the plural substrates in the step of depositing by supplying a fluorine-containing gas and an ammonia gas to the reaction chamber; and alternately repeating the step of depositing and the step of etching.
摘要翻译：所公开的膜沉积方法包括加载多个基板的步骤，每个基板在支架的形式的反应室中包括包括凹部的图案; 通过向所述反应室供给含硅气体和含氧气体，在所述多个基板上沉积氧化硅膜; 在通过向反应室供给含氟气体和氨气的沉积步骤中蚀刻沉积在多个基板上的氧化硅膜; 并且交替地重复沉积步骤和蚀刻步骤。

2. 发明授权

US09005459B2 Film deposition method and film deposition apparatus 有权
标题翻译：膜沉积法和成膜装置
公开(公告)号：US09005459B2
公开(公告)日：2015-04-14
申请号：US13420723
申请日：2012-03-15
申请人： Akinobu Kakimoto , Satoshi Takagi , Toshiyuki Ikeuchi , Katsuhiko Komori , Kazuhide Hasebe
发明人： Akinobu Kakimoto , Satoshi Takagi , Toshiyuki Ikeuchi , Katsuhiko Komori , Kazuhide Hasebe
IPC分类号： B44C1/22 , B05C11/00 , H01L21/02 , C23C16/04 , C23C16/455 , H01J37/32 , H01L21/311 , H01L21/67
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/45546 , H01J37/32091 , H01J37/3244 , H01J37/32779 , H01L21/02337 , H01L21/31116 , H01L21/67109
摘要： A disclosed film deposition method includes steps of loading plural substrates each of which includes a pattern including a concave part in a reaction chamber in the form of shelves; depositing a silicon oxide film on the plural substrates by supplying a silicon-containing gas and an oxygen-containing gas to the reaction chamber; etching the silicon oxide film deposited on the plural substrates in the step of depositing by supplying a fluorine-containing gas and an ammonia gas to the reaction chamber; and alternately repeating the step of depositing and the step of etching.
摘要翻译：所公开的膜沉积方法包括加载多个基板的步骤，每个基板在支架的形式的反应室中包括包括凹部的图案; 通过向所述反应室供给含硅气体和含氧气体，在所述多个基板上沉积氧化硅膜; 在通过向反应室供给含氟气体和氨气的沉积步骤中蚀刻沉积在多个基板上的氧化硅膜; 并且交替地重复沉积步骤和蚀刻步骤。

3. 发明申请

US20130005142A1 METHOD AND APPARATUS FOR FORMING SILICON FILM 有权
标题翻译：用于形成硅膜的方法和装置
公开(公告)号：US20130005142A1
公开(公告)日：2013-01-03
申请号：US13537622
申请日：2012-06-29
申请人： Akinobu Kakimoto , Satoshi Takagi , Kazuhide Hasebe
发明人： Akinobu Kakimoto , Satoshi Takagi , Kazuhide Hasebe
IPC分类号： H01L21/283
CPC分类号： C23C16/24 , C23C16/045 , C23C16/45523 , H01L21/28556 , H01L21/32055 , H01L21/76876 , H01L21/76877
摘要： Provided is a method and apparatus for forming a silicon film, which are capable of suppressing generation of a void or seam. The method includes performing a first film-forming process, performing an etching process, performing a doping process, and performing a second film-forming process. In the first film-forming process, a non-doped silicon film that is not doped with an impurity is formed so as to embed a groove of an object. In the etching process, the non-doped silicon film formed via the first film-forming process is etched. In the doping process, the non-doped silicon film etched via the etching process is doped with an impurity. In the second film-forming process, an impurity-doped silicon film is formed so as to embed the silicon film doped via the doping process.
摘要翻译：提供一种能够抑制空隙或接缝的产生的用于形成硅膜的方法和装置。该方法包括进行第一成膜处理，进行蚀刻处理，进行掺杂工序，以及进行第二成膜工序。在第一成膜工艺中，形成未掺杂有杂质的非掺杂硅膜，从而嵌入物体的凹槽。在蚀刻工艺中，蚀刻经由第一成膜工艺形成的非掺杂硅膜。在掺杂工艺中，通过蚀刻工艺蚀刻的非掺杂硅膜掺杂有杂质。在第二成膜工艺中，形成杂质掺杂硅膜，以便嵌入通过掺杂工艺掺杂的硅膜。

4. 发明授权

US08586448B2 Method and apparatus for forming silicon film 有权
标题翻译：用于形成硅膜的方法和装置
公开(公告)号：US08586448B2
公开(公告)日：2013-11-19
申请号：US13537622
申请日：2012-06-29
申请人： Akinobu Kakimoto , Satoshi Takagi , Kazuhide Hasebe
发明人： Akinobu Kakimoto , Satoshi Takagi , Kazuhide Hasebe
IPC分类号： H01L21/76
CPC分类号： C23C16/24 , C23C16/045 , C23C16/45523 , H01L21/28556 , H01L21/32055 , H01L21/76876 , H01L21/76877
摘要： Provided is a method and apparatus for forming a silicon film, which are capable of suppressing generation of a void or seam. The method includes performing a first film-forming process, performing an etching process, performing a doping process, and performing a second film-forming process. In the first film-forming process, a non-doped silicon film that is not doped with an impurity is formed so as to embed a groove of an object. In the etching process, the non-doped silicon film formed via the first film-forming process is etched. In the doping process, the non-doped silicon film etched via the etching process is doped with an impurity. In the second film-forming process, an impurity-doped silicon film is formed so as to embed the silicon film doped via the doping process.
摘要翻译：提供一种能够抑制空隙或接缝的产生的用于形成硅膜的方法和装置。该方法包括进行第一成膜处理，进行蚀刻处理，进行掺杂工序，以及进行第二成膜工序。在第一成膜工艺中，形成未掺杂有杂质的非掺杂硅膜，从而嵌入物体的凹槽。在蚀刻工艺中，蚀刻经由第一成膜工艺形成的非掺杂硅膜。在掺杂工艺中，通过蚀刻工艺蚀刻的非掺杂硅膜掺杂有杂质。在第二成膜工艺中，形成杂质掺杂硅膜，以便嵌入通过掺杂工艺掺杂的硅膜。

5. 发明授权

US08802547B2 Method and apparatus for forming amorphous silicon film 有权
标题翻译：用于形成非晶硅膜的方法和装置
公开(公告)号：US08802547B2
公开(公告)日：2014-08-12
申请号：US13552719
申请日：2012-07-19
申请人： Akinobu Kakimoto , Satoshi Takagi , Kazumasa Igarashi
发明人： Akinobu Kakimoto , Satoshi Takagi , Kazumasa Igarashi
IPC分类号： H01L21/00 , H01L21/02
CPC分类号： H01L21/02664 , H01L21/0245 , H01L21/02532 , H01L21/02592 , H01L21/0262
摘要： A method of forming an amorphous silicon film includes: forming a seed layer on a surface of a base by heating the base and supplying an amino silane-based gas to the heated base, forming the amorphous silicon film with thickness for layer growth on the seed layer by heating the base and supplying a silane-based gas containing no amino group to the seed layer on the surface of the heated base, and decreasing a film thickness of the amorphous silicon film by etching the amorphous silicon film formed with thickness for layer growth.
摘要翻译：形成非晶硅膜的方法包括：通过加热基底并向加热的基底供应氨基硅烷基气体，在基底的表面上形成种子层，形成具有种子厚度的非晶硅膜通过加热基底并将不含氨基的硅烷系气体供给到加热基材的表面上的种子层，并且通过蚀刻形成有层生长厚度的非晶硅膜来降低非晶硅膜的膜厚度。

6. 发明申请

US20050136693A1 Thermal processing unit and thermal processing method 审中-公开
标题翻译：热处理单元和热处理方法
公开(公告)号：US20050136693A1
公开(公告)日：2005-06-23
申请号：US10942103
申请日：2004-09-16
申请人： Kazuhide Hasebe , Yutaka Takahashi , Kota Umezawa , Satoshi Takagi , Mitsuhiro Okada , Takashi Chiba , Jun Ogawa
发明人： Kazuhide Hasebe , Yutaka Takahashi , Kota Umezawa , Satoshi Takagi , Mitsuhiro Okada , Takashi Chiba , Jun Ogawa
IPC分类号： C23C16/34 , C23C16/455 , H01L21/205 , H01L21/314 , H01L21/318 , H01L21/324 , H01L21/336 , H01L21/31 , H01L21/469
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/45531 , C23C16/45546 , H01L21/022 , H01L21/02271 , H01L21/3141 , H01L21/3185
摘要： The present invention is a thermal processing method of conducting a thermal process to an object to be processed, a base film having been formed on a surface of the object to be processed, the base film consisting of a SiO2 film or a SiON film. The method includes: an arranging step of arranging the object to be processed in a processing container; and a laminating step of supplying a source gas and an ammonia gas alternatively and repeatedly, so as to form a silicon nitride film on the base film repeatedly, the source gas being selected from a group consisting of dichlorosilane, hexachlorodisilane and tetrachlorosilane.
摘要翻译：本发明是对待处理物体进行热处理的热处理方法，在被处理物的表面上形成的基膜，由SiO 2 2 电影或SiON电影。该方法包括：将处理对象物置于处理容器内的布置步骤; 以及层叠步骤，交替重复地供给源气体和氨气，以在所述基膜上重复形成氮化硅膜，所述源气体选自二氯硅烷，六氯二硅烷和四氯硅烷。

7. 发明授权

US08296801B2 Asset management system and asset management method 失效
标题翻译：资产管理制度和资产管理办法
公开(公告)号：US08296801B2
公开(公告)日：2012-10-23
申请号：US10009152
申请日：2001-04-10
申请人： Satoshi Takagi , Noboru Yanagita , Keiko Abe
发明人： Satoshi Takagi , Noboru Yanagita , Keiko Abe
IPC分类号： H04N5/445
CPC分类号： H04H60/04 , G11B27/031 , G11B27/032 , G11B27/034 , G11B27/11 , G11B2220/2562 , G11B2220/2587 , G11B2220/41 , G11B2220/90
摘要： A program preparation and distribution system, in which metadata indicating variable information is generated from project to project, from medium to medium, from scene to scene or from frame to frame, to realize an asset management by controlling an archive system depending on the metadata. A database is constructed in which the archive system manages metadata in a concentrated fashion along with the essence such as video and audio data. By a distributed program editing system, the metadata inputted at the planning processing and at the casting processing is registered in the database managed in a concentrated fashion by an archival manager, at the same time as a tag specifying the registered metadata is issued. This tag is co-packed with the video and audio information obtained on acquisition by an acquisition system. In a production system, the timing to flow the staff roll is specified during the off-line processing in the production system.
摘要翻译：一种程序准备和分发系统，其中从项目到项目，从中间到中等，从现场到帧或从帧到帧生成从变量信息到元数据的元数据，通过根据元数据控制归档系统实现资产管理。构建数据库，其中归档系统以集中的方式管理元数据以及诸如视频和音频数据的本质。通过分布式程序编辑系统，在规划处理和投射处理中输入的元数据被归档管理器集中管理的数据库中，同时发布指定注册的元数据的标签。该标签与采集系统采集获得的视频和音频信息相结合。在生产系统中，在生产系统的脱机处理过程中指定流动员工卷的时间。

8. 发明申请

US20050227459A1 Film formation method and apparatus for semiconductor process 失效
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US20050227459A1
公开(公告)日：2005-10-13
申请号：US11091414
申请日：2005-03-29
申请人： Yutaka Takahashi , Satoshi Takagi , Masahiko Tomita
发明人： Yutaka Takahashi , Satoshi Takagi , Masahiko Tomita
IPC分类号： C23C16/24 , C23C16/455 , C23C16/56 , H01L21/20 , H01L21/205 , H01L21/28 , H01L21/285 , H01L21/324 , H01L29/423 , H01L29/49 , H01L29/78
CPC分类号： C23C16/24 , C23C16/45557 , C23C16/56 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02667 , H01L21/28035 , H01L21/324 , H01L29/78
摘要： A film formation method for a semiconductor process is arranged to form an amorphous silicon film on a target substrate by CVD in a process field within a reaction container, while supplying a first process gas containing silicon into the process field, and setting the process field at a first temperature of 550° C. or more and at a first pressure. The method is arranged to subsequently poly-crystallize the amorphous silicon film by a heat process in the process field to form a poly-silicon film, while supplying a second process gas different from the first process gas into the process field, and setting the process field at a second temperature higher than the first temperature and at a second pressure.
摘要翻译：半导体工艺的成膜方法被布置成在反应容器内的工艺场中通过CVD在目标衬底上形成非晶硅膜，同时在工艺领域中提供含有硅的第一工艺气体，并将工艺场设定在第一温度为550℃以上且处于第一压力。该方法被布置成随后在工艺领域中通过热处理多晶结晶非晶硅膜以形成多晶硅膜，同时将不同于第一工艺气体的第二工艺气体供应到工艺领域中，并且将工艺在比第一温度高的第二温度和第二压力下进行。

9. 发明授权

US4746999A Eject mechanism for cassette player 失效
标题翻译：盒式播放机的弹出机制
公开(公告)号：US4746999A
公开(公告)日：1988-05-24
申请号：US843065
申请日：1986-03-24
申请人： Toshihiro Ikahata , Satoshi Takagi , Hideki Hayashi , Masahiro Uno
发明人： Toshihiro Ikahata , Satoshi Takagi , Hideki Hayashi , Masahiro Uno
IPC分类号： G11B15/093 , G11B15/00 , G11B21/02
CPC分类号： G11B15/093
摘要： An eject mechanism for ejecting automatically the tape cassette in a tape player, in which one of two switching gears disposed on both the sides of a gear plate and engaging with a forward/backward rotating gear is selectively engaged with an intermittent gear by said forward/backward rotating gear and said intermittent gear drives the driven mechanism for the eject operation, said intermittent gear being so constructed that it is locked only in the forward rotational direction.
摘要翻译：一种弹出机构，用于自动弹出磁带播放机中的磁带盒，其中设置在齿轮板的两侧并与前/后旋转齿轮啮合的两个切换齿轮中的一个选择性地与所述前进/后退旋转齿轮的间歇齿轮啮合，向后旋转的齿轮和所述间歇齿轮驱动从动机构进行弹出操作，所述间歇齿轮被构造成仅在正向旋转方向上被锁定。

10. 发明授权

US4538753A Tape recorder 失效
标题翻译：磁带录音机
公开(公告)号：US4538753A
公开(公告)日：1985-09-03
申请号：US398257
申请日：1982-07-14
申请人： Hideki Hayashi , Satoshi Takagi , Yukio Ito , Sadayoshi Endo
发明人： Hideki Hayashi , Satoshi Takagi , Yukio Ito , Sadayoshi Endo
IPC分类号： G11B15/44 , G11B15/10 , G11B15/32 , G11B19/02
CPC分类号： G11B15/442
摘要： A fast-forwarding and rewinding levers operating mechanism in a tape recorder comprisig an FF (fast forward) lever element having formed therein a hook-shaped guide recess, a REW (rewinding) lever element superposed on the FF lever element and which has formed therein a hook-shaped recess so positioned in a direction opposite to said guide recess in the FF lever element as to intersect the latter guide recess, an oscillating member located under said FF and REW lever elements and having an oscillating portion provided at the intersection between said two guide recesses, and a transmission means to oscillate said oscillating member for a rotary medium to engage a reel base, said oscillating portion of the oscillating member being oscillated, by pressing said FF or REW lever element, to put said transmission means into action, thus revolving said reel base for FF or REW operation.
摘要翻译：一种录像机中的快进和倒带杆操作机构，其特征在于，具有形成有钩形导向凹槽的FF（快进）杠杆元件，叠置在FF杠杆元件上并形成在其中的REW（重绕）杠杆元件钩状凹部，其位于与所述FF杠杆元件中的与所述引导凹槽相反的方向上，以与所述引导凹槽相交;摆动构件，位于所述FF和REW杠杆元件下方，并具有摆动部分，所述摆动部分设置在所述两个引导凹槽，以及传动装置，用于使用于旋转介质的所述摆动构件摆动以接合卷轴底座，所述摆动构件的所述摆动部分通过按压所述FF或REW杆元件而摆动，以使所述传动装置起作用，从而使所述卷轴基座旋转以进行FF或REW操作。

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