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1. 发明授权

US08431494B2 Film formation method and film formation apparatus 有权
标题翻译：成膜方法和成膜装置
公开(公告)号：US08431494B2
公开(公告)日：2013-04-30
申请号：US13164280
申请日：2011-06-20
申请人： Hiroki Murakami , Kazuhide Hasebe , Kazuya Yamamoto , Toshihiko Takahashi , Daisuke Suzuki
发明人： Hiroki Murakami , Kazuhide Hasebe , Kazuya Yamamoto , Toshihiko Takahashi , Daisuke Suzuki
IPC分类号： H01L21/469 , H01L21/316
CPC分类号： C23C16/401 , C23C16/45523
摘要： A film formation method of forming a silicon oxide film on a surface of an object to be processed in a process chamber includes absorbing a seed gas comprising a silane-based gas on the surface of the object to be processed by supplying the seed gas into the process chamber, forming a silicon film having an impurity by supplying a silicon-containing gas as a material gas, and an addition gas including the impurity into the process chamber, and oxidizing the silicon film to convert the silicon film into the silicon oxide film. Accordingly, the silicon oxide film having the high density and the high stress is formed on the surface of the object to be processed.
摘要翻译：在处理室中的待处理物体的表面上形成氧化硅膜的成膜方法包括通过将种子气体供给到待处理物体的表面上来吸收包含硅烷类气体的种子气体处理室，通过将作为原料气体的含硅气体和含有该杂质的添加气体供给到处理室中，形成具有杂质的硅膜，氧化硅膜，将硅膜转换成氧化硅膜。因此，在待处理物体的表面上形成具有高密度和高应力的氧化硅膜。

2. 发明申请

US20090124083A1 Film formation apparatus and method for using same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US20090124083A1
公开(公告)日：2009-05-14
申请号：US12285575
申请日：2008-10-08
申请人： Nobutake Nodera , Jun Sato , Kazuya Yamamoto , Kazuhide Hasebe
发明人： Nobutake Nodera , Jun Sato , Kazuya Yamamoto , Kazuhide Hasebe
IPC分类号： H01L21/306
CPC分类号： C23C16/345 , C23C16/0218 , C23C16/4405 , C23C16/452 , C23C16/45542 , H01J37/32082 , H01J37/3244 , H01J37/32522
摘要： A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate while supplying a film formation reactive gas from a first nozzle inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited inside the reaction chamber and the first nozzle, in a state where the reaction chamber does not accommodate the target substrate. The cleaning process includes, in order, an etching step of supplying a cleaning reactive gas for etching the by-product film into the reaction chamber, and activating the cleaning reactive gas, thereby etching the by-product film, and an exhaust step of stopping supply of the cleaning reactive gas and exhausting gas from inside the reaction chamber. The etching step is arranged to use conditions that cause the cleaning reactive gas supplied in the reaction chamber to flow into the first nozzle.
摘要翻译：在反应室内的第一喷嘴供给成膜反应性气体的同时，使用半导体工艺的成膜装置在目标基板上形成薄膜的方法包括进行清洗处理以除去内部沉积的副产物膜反应室和第一喷嘴，处于反应室不容纳目标基板的状态。清洗工序依次包括：将清洗反应性气体供给到反应室内的蚀刻工序，激活清洗反应性气体，蚀刻副产物膜，以及停止排出工序从反应室内供给清洗反应气体和排气。蚀刻步骤被设置为使得在反应室中供应的清洁反应气体流入第一喷嘴的条件。

3. 发明授权

US07993705B2 Film formation apparatus and method for using the same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US07993705B2
公开(公告)日：2011-08-09
申请号：US11819500
申请日：2007-06-27
申请人： Nobutake Nodera , Kazuhide Hasebe , Kazuya Yamamoto
发明人： Nobutake Nodera , Kazuhide Hasebe , Kazuya Yamamoto
IPC分类号： C23C16/56 , C23C16/00 , C23C16/54 , B08B7/00 , B08B7/04
CPC分类号： H01L21/67109 , C23C16/4404 , C23C16/4405 , Y10S438/905
摘要： A method for using a film formation apparatus includes performing film formation of a product film selected from the group consisting of a silicon nitride film and a silicon oxynitride film on a target substrate within a reaction chamber of the film formation apparatus; and unloading the target substrate from the reaction chamber. Thereafter, the method includes first heating an inner surface of the reaction chamber at a post process temperature while supplying a post process gas for nitridation into the reaction chamber, thereby performing nitridation of a by-product film deposited on the inner surface of the reaction chamber; then rapidly cooling the inner surface of the reaction chamber, thereby cracking the by-product film by a thermal stress; and then forcibly exhausting gas from inside the reaction chamber to carry the by-product film, thus peeled off from the inner surface.
摘要翻译：使用成膜装置的方法包括在成膜装置的反应室内的目标基板上进行选自由氮化硅膜和氮氧化硅膜组成的组中的产品膜的成膜; 并从反应室卸载目标衬底。此后，该方法包括在后处理温度下先加热反应室的内表面，同时向反应室供应用于氮化的后处理气体，从而对沉积在反应室内表面上的副产物膜进行氮化 ; 然后快速冷却反应室的内表面，从而通过热应力裂解副产物膜; 然后从反应室内强制排出气体以携带副产物膜，从而从内表面剥离。

4. 发明授权

US08697578B2 Film formation apparatus and method for using same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US08697578B2
公开(公告)日：2014-04-15
申请号：US12285575
申请日：2008-10-08
申请人： Nobutake Nodera , Jun Sato , Kazuya Yamamoto , Kazuhide Hasebe
发明人： Nobutake Nodera , Jun Sato , Kazuya Yamamoto , Kazuhide Hasebe
IPC分类号： H01L21/311
CPC分类号： C23C16/345 , C23C16/0218 , C23C16/4405 , C23C16/452 , C23C16/45542 , H01J37/32082 , H01J37/3244 , H01J37/32522
摘要： A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate while supplying a film formation reactive gas from a first nozzle inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited inside the reaction chamber and the first nozzle, in a state where the reaction chamber does not accommodate the target substrate. The cleaning process includes, in order, an etching step of supplying a cleaning reactive gas for etching the by-product film into the reaction chamber, and activating the cleaning reactive gas, thereby etching the by-product film, and an exhaust step of stopping supply of the cleaning reactive gas and exhausting gas from inside the reaction chamber. The etching step is arranged to use conditions that cause the cleaning reactive gas supplied in the reaction chamber to flow into the first nozzle.
摘要翻译：在反应室内的第一喷嘴供给成膜反应性气体的同时，使用半导体工艺的成膜装置在目标基板上形成薄膜的方法包括进行清洗处理以除去内部沉积的副产物膜反应室和第一喷嘴，处于反应室不容纳目标基板的状态。清洗工序依次包括：将清洗反应性气体供给到反应室内的蚀刻工序，激活清洗反应性气体，蚀刻副产物膜，以及停止排出工序从反应室内供给清洗反应气体和排气。蚀刻步骤被设置为使得在反应室中供应的清洁反应气体流入第一喷嘴的条件。

5. 发明申请

US20090114156A1 Film formation apparatus for semiconductor process 审中-公开
标题翻译：用于半导体工艺的成膜装置
公开(公告)号：US20090114156A1
公开(公告)日：2009-05-07
申请号：US12285512
申请日：2008-10-07
申请人： Nobutake Nodera , Jun Sato , Kazuya Yamamoto , Kazuhide Hasebe
发明人： Nobutake Nodera , Jun Sato , Kazuya Yamamoto , Kazuhide Hasebe
IPC分类号： C23C16/00
CPC分类号： C23C16/4405 , C23C16/345 , C23C16/45525 , H01L21/3185
摘要： A film formation apparatus for a semiconductor process includes a support member having a plurality of support levels configured to support target substrates inside a reaction chamber; a film formation gas supply system configured to supply a film formation gas into the reaction chamber and including a gas distribution nozzle; a cleaning gas supply system configured to supply a cleaning gas for etching a by-product film deposited inside the reaction chamber; and an exhaust system configured to exhaust gas from inside the reaction chamber. The cleaning gas supply system includes a gas nozzle disposed near a bottom of the reaction chamber and having a gas supply port at its top directed upward, and the gas supply port is located below the lowermost one of the support levels of the support member.
摘要翻译：一种用于半导体工艺的成膜装置包括：支撑构件，其具有多个支撑层，构造成支撑反应室内的目标基板; 成膜气体供给系统，其构造成将成膜气体供给到所述反应室中并且包括气体分配喷嘴; 清洁气体供给系统，被配置为提供用于蚀刻沉积在所述反应室内的副产物膜的清洁气体; 以及构造成从反应室内排出气体的排气系统。清洁气体供给系统包括设置在反应室底部附近的气体喷嘴，其顶部朝向上方具有气体供给口，气体供给口位于支撑构件的支撑水平面的最下方。

6. 发明申请

US20080003362A1 Film formation apparatus and method for using the same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US20080003362A1
公开(公告)日：2008-01-03
申请号：US11819500
申请日：2007-06-27
申请人： Nobutake Nodera , Kazuhide Hasebe , Kazuya Yamamoto
发明人： Nobutake Nodera , Kazuhide Hasebe , Kazuya Yamamoto
IPC分类号： C23C16/00 , B05C11/00
CPC分类号： H01L21/67109 , C23C16/4404 , C23C16/4405 , Y10S438/905
摘要： A method for using a film formation apparatus includes performing film formation of a product film selected from the group consisting of a silicon nitride film and a silicon oxynitride film on a target substrate within a reaction chamber of the film formation apparatus; and unloading the target substrate from the reaction chamber. Thereafter, the method includes first heating an inner surface of the reaction chamber at a post process temperature while supplying a post process gas for nitridation into the reaction chamber, thereby performing nitridation of a by-product film deposited on the inner surface of the reaction chamber; then rapidly cooling the inner surface of the reaction chamber, thereby cracking the by-product film by a thermal stress; and then forcibly exhausting gas from inside the reaction chamber to carry the by-product film, thus peeled off from the inner surface.
摘要翻译：使用成膜装置的方法包括在成膜装置的反应室内的目标基板上进行选自由氮化硅膜和氮氧化硅膜组成的组中的产品膜的成膜; 并从反应室卸载目标衬底。此后，该方法包括在后处理温度下先加热反应室的内表面，同时向反应室供应用于氮化的后处理气体，从而对沉积在反应室内表面上的副产物膜进行氮化 ; 然后快速冷却反应室的内表面，从而通过热应力裂解副产物膜; 然后从反应室内强制排出气体以携带副产物膜，从而从内表面剥离。

7. 发明授权

US09007605B2 Image formation apparatus 有权
标题翻译：图像形成装置
公开(公告)号：US09007605B2
公开(公告)日：2015-04-14
申请号：US13473804
申请日：2012-05-17
申请人： Kazuya Yamamoto
发明人： Kazuya Yamamoto
IPC分类号： G06F3/12 , H04N1/00 , G06F15/00
CPC分类号： H04N1/00952 , H04N1/00236 , H04N1/00896 , H04N2201/0094
摘要： An image formation apparatus includes an image reading control unit and a print control unit. The print control unit includes: a first communication control unit connected to the image reading control unit; and a power supply control unit configured to control power supply to the image reading control unit. The image reading control unit includes: a second communication control unit connected to the first communication control unit. When completing a process to transition to a power save mode in accordance with an instruction from the print control unit, the image reading control unit cuts off the communications through the second communication control unit. After sending the image reading control unit the instruction to transition to the power save mode, the print control unit detects the cutoff of the communications and then cuts off the power supply to the image reading control unit through the power supply control unit.
摘要翻译：图像形成装置包括图像读取控制单元和打印控制单元。打印控制单元包括：连接到图像读取控制单元的第一通信控制单元; 以及电源控制单元，被配置为控制对所述图像读取控制单元的电力供应。图像读取控制单元包括：连接到第一通信控制单元的第二通信控制单元。当完成根据来自打印控制单元的指令转换到省电模式的处理时，图像读取控制单元通过第二通信控制单元切断通信。在将图像读取控制单元发送到转换到省电模式的指令之后，打印控制单元检测通信的截止，然后通过电源控制单元切断对图像读取控制单元的电源。

8. 发明授权

US08945791B2 Oxygen side electrode for a fuel cell 有权
标题翻译：燃料电池用氧侧电极
公开(公告)号：US08945791B2
公开(公告)日：2015-02-03
申请号：US13636606
申请日：2011-03-23
申请人： Koichiro Asazawa , Koji Yamada , Hirohisa Tanaka , Kazuya Yamamoto , Tim Olson , Svitlana Pylypenko , Plamen Atanassov
发明人： Koichiro Asazawa , Koji Yamada , Hirohisa Tanaka , Kazuya Yamamoto , Tim Olson , Svitlana Pylypenko , Plamen Atanassov
IPC分类号： H01M8/10 , H01M4/90 , H01M4/88 , H01M4/86
CPC分类号： H01M4/8605 , H01M4/8828 , H01M4/9008 , H01M4/9083 , H01M8/1011 , H01M2004/8689 , H01M2250/20 , Y02E60/523 , Y02T90/32
摘要： In a fuel cell including an electrolyte layer allowing an anion component to migrate, and a fuel-side electrode and an oxygen-side electrode arranged to face each other while sandwiching the electrolyte layer, the oxygen-side electrode contains a first catalyst containing a first transition metal and polypyrrole, and a second catalyst containing a second transition metal and a porphyrin ring-containing compound so that the mixing ratio of the first catalyst relative to 100 parts by mass of the total amount of the first catalyst and the second catalyst is more than 10 parts by mass, and below 90 parts by mass.
摘要翻译：在包含允许阴离子成分迁移的电解质层的燃料电池中，并且在夹着电解质层的同时配置为彼此面对的燃料侧电极和氧气侧电极，所述氧气侧电极含有含有第一催化剂的第一催化剂，过渡金属和聚吡咯，以及含有第二过渡金属和含卟啉环的化合物的第二催化剂，使得第一催化剂与第一催化剂和第二催化剂的总量相对于100质量份的混合比更多 10质量份以下，90质量份以下。

9. 发明授权

US08870176B2 Sheet processing apparatus with pressing unit 有权
标题翻译：带加压单元的片材处理设备
公开(公告)号：US08870176B2
公开(公告)日：2014-10-28
申请号：US13371717
申请日：2012-02-13
申请人： Kazuya Yamamoto
发明人： Kazuya Yamamoto
IPC分类号： B65H37/04 , G03G15/00 , B42C1/12 , B42B4/00
CPC分类号： B42C1/12 , B42B4/00 , B42C1/125 , B42C13/006 , B42C19/02 , B65H37/04 , B65H2301/4223 , B65H2405/22 , B65H2408/1222 , B65H2801/27 , G03G15/6544
摘要： A sheet processing apparatus includes: a stacking unit that stacks conveyed sheets; an aligning unit that aligns the sheets stacked on the stacking unit in a sheet conveying direction; a binding unit that moves along an end portion of a bundle of the sheets on a binding portion side and performs a binding process for the bundle of the sheets that have been aligned by the aligning unit; a pressing unit that presses the bundle of the sheets at the end portion thereof on the binding portion side; and an interlocking unit that moves the pressing unit in association with a motion of the binding unit.
摘要翻译：片材处理设备包括：堆叠所输送的片材的堆叠单元; 对准单元，其在片材输送方向上对齐堆叠单元上的片材; 捆绑单元，其沿着捆绑部分侧的纸张束的端部移动，并且对已经对准的对齐单元的纸张束执行装订处理; 按压单元，其在所述装订部分侧的端部处挤压所述片材束; 以及联锁单元，其与所述装订单元的运动相关联地移动所述按压单元。

10. 发明授权

US08558549B2 Detector circuit and semiconductor device using same 有权
标题翻译：检测电路和使用其的半导体器件
公开(公告)号：US08558549B2
公开(公告)日：2013-10-15
申请号：US12941134
申请日：2010-11-08
申请人： Kazuya Yamamoto , Tomoyuki Asada , Miyo Miyashita
发明人： Kazuya Yamamoto , Tomoyuki Asada , Miyo Miyashita
IPC分类号： G01R31/00 , G01R25/02
CPC分类号： G01R31/2822 , G01R23/20 , H03F3/24 , H04B1/0475 , H04B17/103
摘要： A detector circuit for detecting degradation in the distortion characteristics of a power amplifier based on signals from both ends of a coupled line of a directional coupler. The detector circuit includes a phase shifter/attenuator for phase shifting and attenuating a signal from a coupled terminal of the coupled line, a differential amplifier for outputting difference between an output signal from the phase shifter/attenuator and a signal from the isolated terminal of the coupled line, a wave detector circuit for converting the difference into a DC signal, and a comparing circuit for determining whether the voltage level of the DC signal exceeds a predetermined level. When degradation in the distortion characteristics of the power amplifier arises, the phase shifter/attenuator phase shifts the signal from the coupled terminal and outputs a signal 180° out of phase with the signal from the isolated terminal.
摘要翻译：一种用于根据来自定向耦合器的耦合线的两端的信号来检测功率放大器的失真特性的劣化的检测器电路。检测器电路包括用于相移和衰减来自耦合线的耦合端的信号的移相器/衰减器，用于输出来自移相器/衰减器的输出信号与来自该移相器/衰减器的隔离端的信号的差分放大器耦合线，用于将差值转换为DC信号的波检测器电路，以及用于确定DC信号的电压电平是否超过预定电平的比较电路。当功率放大器的失真特性出现降低时，移相器/衰减器将来自耦合端子的信号相移，并输出与隔离端子信号180°异相的信号。

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