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1. 发明授权

US09068153B2 Cleaning composition, cleaning process, and process for producing semiconductor device 有权
标题翻译：清洁组合物，清洁工艺和半导体器件的制造工艺
公开(公告)号：US09068153B2
公开(公告)日：2015-06-30
申请号：US12893964
申请日：2010-09-29
申请人： Tomonori Takahashi , Kazutaka Takahashi , Atsushi Mizutani , Hiroyuki Seki , Hideo Fushimi , Tomoo Kato
发明人： Tomonori Takahashi , Kazutaka Takahashi , Atsushi Mizutani , Hiroyuki Seki , Hideo Fushimi , Tomoo Kato
IPC分类号： C09K13/06 , C11D11/00 , C11D7/08 , C11D7/50
CPC分类号： G03F7/425 , C09K13/00 , C09K13/06 , C11D7/08 , C11D7/265 , C11D7/3209 , C11D7/3245 , C11D7/34 , C11D7/5013 , C11D11/0047 , G03F7/422 , G03F7/423 , H01L21/02052 , H01L21/02057 , H01L21/02063 , H01L21/02068 , H01L21/02071 , H01L21/31133 , H01L21/32134 , H01L21/32136 , H01L21/32138 , H01L21/32139
摘要： A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.
摘要翻译：提供了用于去除形成在半导体衬底上的等离子体蚀刻残渣和/或灰化残留物的清洁组合物，其包括（组分a）水，（组分b）羟胺和/或其盐，（组分c）碱性有机化合物，和（组分d）有机酸，并且具有7至9的pH。还提供了一种清洁方法和使用该清洁组合物的半导体器件的制造方法。

2. 发明授权

US08669217B2 Cleaning composition, cleaning process, and process for producing semiconductor device 有权
标题翻译：清洁组合物，清洁工艺和半导体器件的制造工艺
公开(公告)号：US08669217B2
公开(公告)日：2014-03-11
申请号：US13050666
申请日：2011-03-17
申请人： Atsushi Mizutani , Hideo Fushimi , Tomonori Takahashi , Kazutaka Takahashi
发明人： Atsushi Mizutani , Hideo Fushimi , Tomonori Takahashi , Kazutaka Takahashi
IPC分类号： C11D7/50 , C11D11/00
CPC分类号： H01L21/02076 , C11D7/261 , C11D7/265 , C11D7/3209 , C11D11/0047 , H01L21/02063 , H01L21/02071
摘要： A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition. There are also provided a process for producing a semiconductor device that includes a step of cleaning plasma etching residue formed above a semiconductor substrate using the cleaning method, and a cleaning composition for removing plasma etching residue formed above a semiconductor substrate that contains 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10.
摘要翻译：提供一种清洗方法，其包括制备含有57〜95重量％的（a成分）水，1〜40重量％的（成分b）含羟基和/或叔羟基的羟基化合物，（组分c）有机酸和（组分d）季铵化合物，该组合物的pH为5〜10，以及通过清洗组合物除去在半导体衬底上形成的等离子体蚀刻残渣的步骤。还提供了一种半导体器件的制造方法，该半导体器件包括使用该清洁方法清洗形成在半导体衬底上的等离子体蚀刻残渣的步骤，以及用于除去形成在半导体衬底上的等离子体蚀刻残渣的清洗组合物，（成分a）的水，1〜40重量％的（成分b）含羟基和/或叔羟基的羟基化合物，（成分c）有机酸和（成分d）季铵化合物，该组合物的pH为5〜10。

3. 发明申请

US20110237480A1 CLEANING COMPOSITION, CLEANING PROCESS, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE 有权
标题翻译：清洁组合物，清洁工艺和生产半导体器件的方法
公开(公告)号：US20110237480A1
公开(公告)日：2011-09-29
申请号：US13050666
申请日：2011-03-17
申请人： Atsushi MIZUTANI , Hideo Fushimi , Tomonori Takahashi , Kazutaka Takahashi
发明人： Atsushi MIZUTANI , Hideo Fushimi , Tomonori Takahashi , Kazutaka Takahashi
IPC分类号： C11D7/60
CPC分类号： H01L21/02076 , C11D7/261 , C11D7/265 , C11D7/3209 , C11D11/0047 , H01L21/02063 , H01L21/02071
摘要： A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition. There are also provided a process for producing a semiconductor device that includes a step of cleaning plasma etching residue formed above a semiconductor substrate using the cleaning method, and a cleaning composition for removing plasma etching residue formed above a semiconductor substrate that contains 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10.
摘要翻译：提供一种清洗方法，其包括制备含有57〜95重量％的（a成分）水，1〜40重量％的（成分b）含羟基和/或叔羟基的羟基化合物，（组分c）有机酸和（组分d）季铵化合物，该组合物的pH为5〜10，以及通过清洗组合物除去在半导体衬底上形成的等离子体蚀刻残渣的步骤。还提供了一种半导体器件的制造方法，该半导体器件包括使用该清洁方法清洗形成在半导体衬底上的等离子体蚀刻残渣的步骤，以及用于除去形成在半导体衬底上的等离子体蚀刻残渣的清洁组合物，该清洁组合物含有57〜95重量％（成分a）的水，1〜40重量％的（成分b）含羟基和/或叔羟基的羟基化合物，（成分c）有机酸和（成分d）季铵化合物，该组合物的pH为5〜10。

4. 发明授权

US07888300B2 Cleaning liquid for semiconductor device and cleaning method 有权
标题翻译：半导体器件清洗液及清洗方法
公开(公告)号：US07888300B2
公开(公告)日：2011-02-15
申请号：US12585486
申请日：2009-09-16
申请人： Hiroyuki Seki , Katsuyuki Nukui , Tadashi Inaba , Hideo Fushimi
发明人： Hiroyuki Seki , Katsuyuki Nukui , Tadashi Inaba , Hideo Fushimi
IPC分类号： C11D3/16
CPC分类号： C11D11/0047 , C11D1/008 , C11D1/58 , C11D1/62 , C11D1/72 , C11D3/0042 , H01L21/02071
摘要： The invention provides a cleaning liquid for semiconductor devices which is capable of removing deposits on a surface of an object to be cleaned including a photoresist, an antireflective film, an etching residue and an ashing residue at a low temperature in a short period of time with reduced environmental burdens and without causing corrosion of an interlayer dielectric film, a metal, a metal nitride, and an alloy in the object to be cleaned. The cleaning liquid for semiconductor devices according to the invention contains a reducing agent and a surfactant and has a pH of 10 to 14.
摘要翻译：本发明提供了一种能够在短时间内在低温下除去包括光致抗蚀剂，抗反射膜，蚀刻残渣和灰化残留物在内的待清洁物体的表面上的沉积物的清洗液，降低环境负荷，并且不会在待清洁物体中引起层间电介质膜，金属，金属氮化物和合金的腐蚀。本发明的半导体装置用清洗液含有还原剂和表面活性剂，其pH为10〜14。

5. 发明申请

US20100160200A1 Cleaning liquid for semiconductor device and cleaning method 有权
标题翻译：半导体器件清洗液及清洗方法
公开(公告)号：US20100160200A1
公开(公告)日：2010-06-24
申请号：US12585486
申请日：2009-09-16
申请人： Hiroyuki Seki , Katsuyuki Nukui , Tadashi Inaba , Hideo Fushimi
发明人： Hiroyuki Seki , Katsuyuki Nukui , Tadashi Inaba , Hideo Fushimi
IPC分类号： C11D7/32
CPC分类号： C11D11/0047 , C11D1/008 , C11D1/58 , C11D1/62 , C11D1/72 , C11D3/0042 , H01L21/02071
摘要： The invention provides a cleaning liquid for semiconductor devices which is capable of removing deposits on a surface of an object to be cleaned including a photoresist, an antireflective film, an etching residue and an ashing residue at a low temperature in a short period of time with reduced environmental burdens and without causing corrosion of an interlayer dielectric film, a metal, a metal nitride, and an alloy in the object to be cleaned. The cleaning liquid for semiconductor devices according to the invention contains a reducing agent and a surfactant and has a pH of 10 to 14.
摘要翻译：本发明提供了一种能够在短时间内在低温下除去包括光致抗蚀剂，抗反射膜，蚀刻残渣和灰化残留物在内的待清洁物体的表面上的沉积物的清洗液，降低环境负荷，并且不会在待清洁物体中引起层间电介质膜，金属，金属氮化物和合金的腐蚀。本发明的半导体装置用清洗液含有还原剂和表面活性剂，其pH为10〜14。

6. 发明申请

US20080050683A1 Photothermographic material 审中-公开
标题翻译：光热成像材料
公开(公告)号：US20080050683A1
公开(公告)日：2008-02-28
申请号：US11892050
申请日：2007-08-20
申请人： Hideo Fushimi
发明人： Hideo Fushimi
IPC分类号： G03C1/00
CPC分类号： G03C1/49863 , G03C1/04 , G03C1/385 , G03C1/49809 , G03C1/49818 , G03C1/49827 , G03C2001/03594 , G03C2200/27
摘要： The present invention provides a photothermographic material having, on a support, an image forming layer including at least a photosensitive silver halide, a non-photosensitive organic silver salt, a reducing agent, and a binder, and at least one non-photosensitive layer, wherein a mean particle size of the non-photosensitive organic silver salt is 0.4 μm or less in terms of equivalent spherical diameter, the photothermographic material includes a fluorocarbon compound represented by the following formulae (FC-1), (FC-2), or (FC-3), and a thickness of the image forming layer is from 10 μm to 14 μm: (Rf)p—Y-(L-Z)q : Formula (FC-1) Rf—Z′-L-Rf : Formula (FC-2) Z-L-Rf′L-Z : Formula (FC-3) wherein Rf represents a fluoroalkyl group or fluoroalkenyl group having 3 to 17 fluorine atoms; Rf′ represents a divalent group thereof; L and Y represent a bond or a divalent linking group; Z represents an anionic group, a cationic group, a betaine group, or a nonionic polar group; and Z′ represents a divalent nonionic polar group.
摘要翻译：本发明提供了一种在载体上具有至少包含感光卤化银，非感光性有机银盐，还原剂和粘合剂的图像形成层和至少一种非感光层的光热敏成像材料，其中所述非感光性有机银盐的平均粒径以当量的球面直径为0.4μm以下，所述光热敏成像材料包括由下式（FC-1），（FC-2）或（FC-3），图像形成层的厚度为10μm〜14μm：<？in-line-formula description =“In-line Formulas”end =“lead”？>（Rf）式（FC-1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？在线公式描述=“在线公式”end =“lead”？Rf-Z'-L-Rf：公式（FC-2）<？in-line-formula description =“In-line Formulas” end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead” 式中，Rf表示氟代烷基或具有3〜17个氟原子的氟代链烯基（式中，R 3表示氟原子，原子 Rf'表示其二价基团; L和Y表示键或二价连接基团; Z表示阴离子基，阳离子基，甜菜碱基或非离子极性基; Z'表示二价非离子极性基团。

7. 发明申请

US20080057448A1 Photothermographic material and image forming method 审中-公开
标题翻译：光热成像材料和成像方法
公开(公告)号：US20080057448A1
公开(公告)日：2008-03-06
申请号：US11896145
申请日：2007-08-30
申请人： Hideo Fushimi
发明人： Hideo Fushimi
IPC分类号： G03C1/43 , G03C5/29
CPC分类号： G03C1/49863 , G03C1/04 , G03C1/385 , G03C1/49818 , G03C1/49827 , G03C1/49881 , G03C2001/03594 , G03C2200/52 , G03C2200/60
摘要： The present invention provides a photothermographic material having, on at least one side of a support, an image forming layer including at least a photosensitive silver halide, a non-photosensitive organic silver salt, a reducing agent for silver ions, and a binder, and at least one non-photosensitive layer, wherein: 1) a mean grain size of the photosensitive silver halide is from 10 nm to 40 nm in terms of equivalent circular diameter, and a number of coated grains thereof is from 550 grains/μm2 to 10000 grains/μm2; and 2) the photothermographic material includes a fluorocarbon compound represented by the following formula (FC-1), (FC-2), or (FC-3). A photothermographic material and an image forming method which exhibit improved coated surface state and high quality are provided. (Rf)p—Y-(L-Z)q: Formula (FC-1) Rf-L-Z′-L-Rf: Formula (FC-2) Z-L-Rf′-L-Z: Formula (FC-3)
摘要翻译：本发明提供一种光热敏成像材料，其在载体的至少一侧具有至少包含感光卤化银，非感光性有机银盐，银离子还原剂和粘合剂的图像形成层，以及至少一个非感光层，其中：1）感光卤化银的平均晶粒尺寸以等效圆直径为10nm至40nm，并且其涂覆颗粒数为550粒/μm > 2 至10000粒/ mum 2 和2）光热敏成像材料包括由下式（FC-1），（FC-2）或（FC-3）表示的碳氟化合物。提供了具有改进的涂布表面状态和高质量的光热敏成像材料和图像形成方法。（？）在线公式描述=“在线公式”end =“lead”？>（Rf） FC-1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> Rf- L-Z'-L-Rf：式（FC-2）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line 公式“end =”lead“？> ZL-Rf'-LZ：式（FC-3）<？in-line-formula description =”In-line Formulas“end =”tail“？>

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