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1. 发明授权

US09068153B2 Cleaning composition, cleaning process, and process for producing semiconductor device 有权
标题翻译：清洁组合物，清洁工艺和半导体器件的制造工艺
公开(公告)号：US09068153B2
公开(公告)日：2015-06-30
申请号：US12893964
申请日：2010-09-29
申请人： Tomonori Takahashi , Kazutaka Takahashi , Atsushi Mizutani , Hiroyuki Seki , Hideo Fushimi , Tomoo Kato
发明人： Tomonori Takahashi , Kazutaka Takahashi , Atsushi Mizutani , Hiroyuki Seki , Hideo Fushimi , Tomoo Kato
IPC分类号： C09K13/06 , C11D11/00 , C11D7/08 , C11D7/50
CPC分类号： G03F7/425 , C09K13/00 , C09K13/06 , C11D7/08 , C11D7/265 , C11D7/3209 , C11D7/3245 , C11D7/34 , C11D7/5013 , C11D11/0047 , G03F7/422 , G03F7/423 , H01L21/02052 , H01L21/02057 , H01L21/02063 , H01L21/02068 , H01L21/02071 , H01L21/31133 , H01L21/32134 , H01L21/32136 , H01L21/32138 , H01L21/32139
摘要： A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.
摘要翻译：提供了用于去除形成在半导体衬底上的等离子体蚀刻残渣和/或灰化残留物的清洁组合物，其包括（组分a）水，（组分b）羟胺和/或其盐，（组分c）碱性有机化合物，和（组分d）有机酸，并且具有7至9的pH。还提供了一种清洁方法和使用该清洁组合物的半导体器件的制造方法。

2. 发明授权

US08669217B2 Cleaning composition, cleaning process, and process for producing semiconductor device 有权
标题翻译：清洁组合物，清洁工艺和半导体器件的制造工艺
公开(公告)号：US08669217B2
公开(公告)日：2014-03-11
申请号：US13050666
申请日：2011-03-17
申请人： Atsushi Mizutani , Hideo Fushimi , Tomonori Takahashi , Kazutaka Takahashi
发明人： Atsushi Mizutani , Hideo Fushimi , Tomonori Takahashi , Kazutaka Takahashi
IPC分类号： C11D7/50 , C11D11/00
CPC分类号： H01L21/02076 , C11D7/261 , C11D7/265 , C11D7/3209 , C11D11/0047 , H01L21/02063 , H01L21/02071
摘要： A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition. There are also provided a process for producing a semiconductor device that includes a step of cleaning plasma etching residue formed above a semiconductor substrate using the cleaning method, and a cleaning composition for removing plasma etching residue formed above a semiconductor substrate that contains 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10.
摘要翻译：提供一种清洗方法，其包括制备含有57〜95重量％的（a成分）水，1〜40重量％的（成分b）含羟基和/或叔羟基的羟基化合物，（组分c）有机酸和（组分d）季铵化合物，该组合物的pH为5〜10，以及通过清洗组合物除去在半导体衬底上形成的等离子体蚀刻残渣的步骤。还提供了一种半导体器件的制造方法，该半导体器件包括使用该清洁方法清洗形成在半导体衬底上的等离子体蚀刻残渣的步骤，以及用于除去形成在半导体衬底上的等离子体蚀刻残渣的清洗组合物，（成分a）的水，1〜40重量％的（成分b）含羟基和/或叔羟基的羟基化合物，（成分c）有机酸和（成分d）季铵化合物，该组合物的pH为5〜10。

3. 发明申请

US20110237480A1 CLEANING COMPOSITION, CLEANING PROCESS, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE 有权
标题翻译：清洁组合物，清洁工艺和生产半导体器件的方法
公开(公告)号：US20110237480A1
公开(公告)日：2011-09-29
申请号：US13050666
申请日：2011-03-17
申请人： Atsushi MIZUTANI , Hideo Fushimi , Tomonori Takahashi , Kazutaka Takahashi
发明人： Atsushi MIZUTANI , Hideo Fushimi , Tomonori Takahashi , Kazutaka Takahashi
IPC分类号： C11D7/60
CPC分类号： H01L21/02076 , C11D7/261 , C11D7/265 , C11D7/3209 , C11D11/0047 , H01L21/02063 , H01L21/02071
摘要： A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition. There are also provided a process for producing a semiconductor device that includes a step of cleaning plasma etching residue formed above a semiconductor substrate using the cleaning method, and a cleaning composition for removing plasma etching residue formed above a semiconductor substrate that contains 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10.
摘要翻译：提供一种清洗方法，其包括制备含有57〜95重量％的（a成分）水，1〜40重量％的（成分b）含羟基和/或叔羟基的羟基化合物，（组分c）有机酸和（组分d）季铵化合物，该组合物的pH为5〜10，以及通过清洗组合物除去在半导体衬底上形成的等离子体蚀刻残渣的步骤。还提供了一种半导体器件的制造方法，该半导体器件包括使用该清洁方法清洗形成在半导体衬底上的等离子体蚀刻残渣的步骤，以及用于除去形成在半导体衬底上的等离子体蚀刻残渣的清洁组合物，该清洁组合物含有57〜95重量％（成分a）的水，1〜40重量％的（成分b）含羟基和/或叔羟基的羟基化合物，（成分c）有机酸和（成分d）季铵化合物，该组合物的pH为5〜10。

4. 发明授权

US08617417B2 Cleaning composition, method for producing semiconductor device, and cleaning method 有权
标题翻译：清洗组合物，半导体装置的制造方法以及清洗方法
公开(公告)号：US08617417B2
公开(公告)日：2013-12-31
申请号：US13107199
申请日：2011-05-13
申请人： Tadashi Inaba , Kazutaka Takahashi , Tomonori Takahashi , Atsushi Mizutani
发明人： Tadashi Inaba , Kazutaka Takahashi , Tomonori Takahashi , Atsushi Mizutani
IPC分类号： C09K13/00
CPC分类号： C11D11/0047 , C11D7/265 , C11D7/3209 , C11D7/3218 , C11D7/5004
摘要： Provided are a cleaning composition which is capable of inhibiting the metal of a semiconductor substrate from corrosion, and has an excellent removability of plasma etching residues and/or ashing residues on the semiconductor substrate, a method for producing a semiconductor device, and a cleaning method using the cleaning composition. The cleaning composition for removing plasma etching residues and/or ashing residues formed on a semiconductor substrate, and a preparation method and a cleaning method for a semiconductor device, using the cleaning composition, wherein the cleaning composition includes (Component a) water; (Component b) an amine compound; (Component c) hydroxylamine and/or a salt thereof; (Component d) a quaternary ammonium compound; (Component e) an organic acid; and (Component f) a water-soluble organic solvent; and has a pH of 6 to 9.
摘要翻译：本发明提供能够抑制半导体衬底的金属腐蚀并且具有优异的半导体衬底上的等离子体蚀刻残留物和/或灰化残留物的可除去性的清洁组合物，半导体器件的制造方法和清洁方法使用清洁组合物。用于除去形成在半导体衬底上的等离子体蚀刻残渣和/或灰化残留物的清洁组合物，以及使用该清洁组合物的半导体器件的制备方法和清洁方法，其中所述清洁组合物包含（组分a）水; （组分b）胺化合物; （组分c）羟胺和/或其盐; （组分d）季铵化合物; （组分e）有机酸; 和（组分f）水溶性有机溶剂; pH为6〜9。

5. 发明授权

US08647523B2 Etching composition 有权
标题翻译：蚀刻组成
公开(公告)号：US08647523B2
公开(公告)日：2014-02-11
申请号：US13415390
申请日：2012-03-08
申请人： Tomonori Takahashi , Tadashi Inaba , Atsushi Mizutani , Bing Du , William A. Wojtczak , Kazutaka Takahashi , Tetsuya Kamimura
发明人： Tomonori Takahashi , Tadashi Inaba , Atsushi Mizutani , Bing Du , William A. Wojtczak , Kazutaka Takahashi , Tetsuya Kamimura
IPC分类号： C03C15/00
CPC分类号： H01L21/32134 , C09K13/06 , C23F1/16 , C23F1/28 , C23F1/30 , C23F1/44 , H01L21/28518 , H01L21/76843
摘要： This disclosure relates to an etching composition containing at least one sulfonic acid, at least one compound containing a halide anion, the halide being chloride or bromide, at least one compound containing a nitrate or nitrosyl ion, and water. The at least one sulfonic acid can be from about 25% by weight to about 95% by weight of the composition. The halide anion can be chloride or bromide, and can be from about 0.01% by weight to about 0.5% by weight of the composition. The nitrate or nitrosyl ion can be from about 0.1% by weight to about 20% by weight of the composition. The water can be at least about 3% by weight of the composition.
摘要翻译：本公开涉及含有至少一种磺酸，至少一种含卤化物阴离子的化合物，卤化物为氯化物或溴化物，至少一种含有硝酸根或亚硝酰基离子的化合物和水的蚀刻组合物。所述至少一种磺酸可以为所述组合物的约25重量％至约95重量％。卤化物阴离子可以是氯化物或溴化物，并且可以是组合物的约0.01重量％至约0.5重量％。硝酸盐或亚硝酰离子可以为组合物的约0.1重量％至约20重量％。水可以是组合物的至少约3重量％。

6. 发明申请

US20120231632A1 Novel Etching Composition 有权
标题翻译：新型蚀刻成分
公开(公告)号：US20120231632A1
公开(公告)日：2012-09-13
申请号：US13415390
申请日：2012-03-08
申请人： Tomonori Takahashi , Tadashi Inaba , Atsushi Mizutani , Bing Du , William A. Wojtczak , Kazutaka Takahashi , Tetsuya Kamimura
发明人： Tomonori Takahashi , Tadashi Inaba , Atsushi Mizutani , Bing Du , William A. Wojtczak , Kazutaka Takahashi , Tetsuya Kamimura
IPC分类号： H01L21/306 , C09K13/06 , C09K13/00
CPC分类号： H01L21/32134 , C09K13/06 , C23F1/16 , C23F1/28 , C23F1/30 , C23F1/44 , H01L21/28518 , H01L21/76843
摘要： This disclosure relates to an etching composition containing at least one sulfonic acid, at least one compound containing a halide anion, the halide being chloride or bromide, at least one compound containing a nitrate or nitrosyl ion, and water. The at least one sulfonic acid can be from about 25% by weight to about 95% by weight of the composition. The halide anion can be chloride or bromide, and can be from about 0.01% by weight to about 0.5% by weight of the composition. The nitrate or nitrosyl ion can be from about 0.1% by weight to about 20% by weight of the composition. The water can be at least about 3% by weight of the composition.
摘要翻译：本公开涉及含有至少一种磺酸，至少一种含卤化物阴离子的化合物，卤化物为氯化物或溴化物，至少一种含有硝酸根或亚硝酰基离子的化合物和水的蚀刻组合物。所述至少一种磺酸可以为所述组合物的约25重量％至约95重量％。卤化物阴离子可以是氯化物或溴化物，并且可以是组合物的约0.01重量％至约0.5重量％。硝酸盐或亚硝酰离子可以为组合物的约0.1重量％至约20重量％。水可以是组合物的至少约3重量％。

7. 外观设计

USD902661S1 Bowl 有权
公开(公告)号：USD902661S1
公开(公告)日：2020-11-24
申请号：US29697488
申请日：2019-07-09
申请人： Tomonori Takahashi
设计人： Tomonori Takahashi
摘要： FIG. 1 is a perspective view of the bowl;
FIG. 2 is a front view of the bowl;
FIG. 3 shows a rear view of the bowl;
FIG. 4 shows a first side view of the bowl;
FIG. 5 shows a second side view of the bowl;
FIG. 6 shows a top view of the bowl; and,
FIG. 7 shows a bottom view of the bowl.
The portions of the bowl shown in broken lines form no part of the claimed design.

8. 发明授权

US06646177B2 Method for separation of p-xylene 失效
标题翻译：对二甲苯分离方法
公开(公告)号：US06646177B2
公开(公告)日：2003-11-11
申请号：US09929385
申请日：2001-08-14
申请人： Tomonori Takahashi , Hitoshi Sakai , Naoyuki Ogawa
发明人： Tomonori Takahashi , Hitoshi Sakai , Naoyuki Ogawa
IPC分类号： C07C7144
CPC分类号： C07C7/144 , C07C15/08
摘要： A method for separating p-xylene by separating and recovering only p-xylene from a p-xylene-containing raw material mixture under high-temperature and high-pressure conditions using a zeolite membrane as a separating membrane is provided. The p-xylene partial pressure at the raw material side of the separating membrane is kept at a sufficiently high pressure and the p-xylene partial pressure at the recovery side of the separating membrane is controlled at a pressure which is not higher than the inflection point of p-xylene adsorption curve. This method for separating p-xylene using a zeolite membrane as a separating membrane can secure a sufficient p-xylene permeation amount and has industrial applicability.
摘要翻译：提供了一种通过使用沸石膜作为分离膜在高温和高压条件下从含对二甲苯的原料混合物中仅分离和回收对二甲苯来分离对二甲苯的方法。将分离膜的原料侧的对二甲苯分压保持在足够高的压力下，将分离膜的回收侧的对二甲苯分压控制在不高于拐点的压力的对二甲苯吸附曲线。使用沸石膜作为分离膜分离对二甲苯的方法可以确保足够的对二甲苯渗透量并具有工业实用性。

9. 发明授权

US5980989A Gas separator and method for preparing it 失效
标题翻译：气体分离器及其制备方法
公开(公告)号：US5980989A
公开(公告)日：1999-11-09
申请号：US602845
申请日：1996-02-26
申请人： Tomonori Takahashi , Shinichi Kosaka
发明人： Tomonori Takahashi , Shinichi Kosaka
IPC分类号： B01D69/14 , B01D71/02 , C01B3/50 , C01B3/56 , B01D67/00 , B01D69/00
CPC分类号： B01D67/0069 , B01D67/0088 , B01D69/141 , B01D71/022 , C01B3/503 , C01B3/505 , B01D2323/46 , B01D2325/04 , B01D2325/22 , C01B2203/0405 , C01B2203/0475
摘要： A gas separator is here disclosed in which a metal for separating a gas is filled into pores opened on the surface of a porous substrate to close them. The thus constituted gas separator can prevent a material gas from leaking into a purified gas. A method for preparing the gas separator is also disclosed which comprises an activation step of immersing the porous substrate having a pair of surfaces in a solution containing an activated metal, while a pressure difference is set between the pair of surfaces, and a chemical plating step of filling the metal for separating the gas into the pores opened on the surface of the porous substrate to close these pores by chemical plating.
摘要翻译： PCT No.PCT / JP94 / 01046 Sec。 371日期1996年2月26日 102（e）日期1996年2月26日PCT提交1994年6月28日PCT公布。出版物WO96 / 00608 日本1996年1月11日这里公开了一种气体分离器，其中用于分离气体的金属被填充到在多孔基材的表面上开口的孔中以封闭它们。这样构成的气体分离器可以防止原料气体泄漏到净化气体中。还公开了一种制备气体分离器的方法，其包括将具有一对表面的多孔基材浸渍在含有活化金属的溶液中的活化步骤，同时在一对表面之间设置压力差，以及化学镀层步骤填充用于将气体分离成在多孔基材的表面上开口的孔中的金属，以通过化学镀来封闭这些孔。

10. 发明授权

US5897970A System for production of high-purity hydrogen, process for production of high-purity hydrogen, and fuel cell system 失效
标题翻译：高纯氢生产系统，高纯氢生产工艺及燃料电池系统
公开(公告)号：US5897970A
公开(公告)日：1999-04-27
申请号：US961502
申请日：1997-10-30
申请人： Manabu Isomura , Takao Soma , Tomonori Takahashi
发明人： Manabu Isomura , Takao Soma , Tomonori Takahashi
IPC分类号： B01D53/22 , B01J19/24 , C01B3/32 , C01B3/34 , C01B3/38 , C01B3/50 , H01M8/00 , H01M8/06 , H01M16/00
CPC分类号： H01M8/0631 , B01J19/2475 , C01B3/32 , C01B3/323 , C01B3/34 , C01B3/38 , C01B3/382 , C01B3/386 , C01B3/501 , H01M8/0612 , B01J2219/0011 , B01J2219/00117 , B01J2219/00159 , C01B2203/0244 , C01B2203/041 , C01B2203/0465 , C01B2203/047 , C01B2203/066 , C01B2203/0811 , C01B2203/0822 , C01B2203/0827 , C01B2203/0844 , C01B2203/0866 , C01B2203/1064 , C01B2203/1076 , C01B2203/1223 , C01B2203/1288 , C01B2203/142 , C01B2203/1604 , C01B2203/82 , Y02P20/126 , Y02P20/128
摘要： There is a system for producing high-purity hydrogen by reforming a hydrocarbon and/or an oxygen atom-containing hydrocarbon to form a reformed gas containing hydrogen and separating the hydrogen from said gas. The system includes a hydrocarbon source, a water source, an oxygen source, a vaporization chamber connecting with the hydrocarbon source, the water source and the oxygen source, and a reforming chamber provided with a catalyst for steam reforming and partial oxidation and a hydrogen-separating membrane. The reforming chamber is thermally connected with the vaporization chamber. A process for producing high-purity hydrogen includes heating a reforming chamber provided with a hydrogen-separating membrane, feeding, into the reforming chamber, hydrocarbon, steam and oxygen or air to give rise to steam reforming and partial oxidation therein to produce a reaction gas, and passing the reaction gas through the hydrogen-separating membrane to recover high-purity hydrogen. The heat possessed by the portion of the reaction gas not permeable into the hydrogen-separating membrane and the heat generated by the partial oxidation are utilized for the heating and reforming of the hydrocarbon, water and oxygen or air.
摘要翻译：存在通过重整烃和/或含氧原子的烃来形成含氢的重整气体并从所述气体中分离出氢气的方法来生产高纯度氢气。该系统包括烃源，水源，氧源，与烃源连接的蒸发室，水源和氧源，以及设置有用于蒸汽重整和部分氧化的催化剂的重整室，分离膜。重整室与蒸发室热连接。一种生产高纯度氢的方法包括加热设置有氢分离膜的重整室，向重整室供给碳氢化合物，蒸气和氧气或空气，引起蒸汽重整和部分氧化，产生反应气体，并使反应气体通过氢分离膜以回收高纯度氢。反应气体不能透过氢分离膜的部分所产生的热量以及由部分氧化产生的热量用于烃，水和氧气或空气的加热和重整。

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