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1. 发明申请

WO2004055580A1 MANUFACTURE OF SHAPED STRUCTURES IN LCD CELLS, AND MASKS THEREFOR 审中-公开
标题翻译：液晶电池中形状结构的制造及其掩膜
公开(公告)号：WO2004055580A1
公开(公告)日：2004-07-01
申请号：PCT/IB2003/005705
申请日：2003-11-28
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , L.G. PHILIPS LCD CO. LTD. , FRENCH, Ian, D. , PARK, Sung-Il
发明人： FRENCH, Ian, D. , PARK, Sung-Il
IPC分类号： G02F1/1335
CPC分类号： G03F7/0007 , G02F1/133553 , G03F1/50
摘要： A method of forming shaped structures in liquid crystal display cells, comprises applying a photosensitive layer (6) to a transistor plate (2), and forming the shaped structures on the photosensitive layer in a photolithographic process using a grey-tone photo mask (7, 21). This mask comprises at least one region of semi-transparent material (8, 16, 18), the degree of transparency of which is dependent on the optical band gap of the material.
摘要翻译：一种在液晶显示单元中形成成形结构的方法，包括将感光层（6）施加到晶体管板（2）上，并且在使用灰色光掩模（7）的光刻工艺中在感光层上形成成形结构，21）。该掩模包括半透明材料（8,16,18）的至少一个区域，其透明度取决于材料的光学带隙。

2. 发明申请

WO2003032070A1 COLOUR DISPLAY DEVICE 审中-公开
标题翻译：彩色显示设备
公开(公告)号：WO2003032070A1
公开(公告)日：2003-04-17
申请号：PCT/IB2002/003752
申请日：2002-09-12
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V.
发明人： SHANNON, John, M. , FRENCH, Ian, D. , SANDOE, Jeremy, N.
IPC分类号： G02F1/167
CPC分类号： G09G3/344 , G02F1/167 , G02F1/23 , G09G5/02 , G09G2300/0434 , G09G2300/08 , G09G2310/06 , G09G2310/061
摘要： A colour display device based on dielectrophoresis is described. The device includes a dielectrophoretic mixture comprising semi-insulating particles of each of the subtractive primary colours cyan (32), magenta (34) and yellow (36) in a semi-insulating liquid (24). The dielectrophoretic frequency characteristics of the particles are the same or similar for particles of the same colour but different between the three colours. In particular, the transition frequency (f 0 ) is different for each colour, or two colours may have the same transition frequency (f 0 ) if one has a reversed sense dielectrophoretic frequency characteristic. Also the speeds of the particles are the same for particles of the same colour but different between the three colours. The pixels are driven with alternating voltages of different frequencies (f 1 , f 2 , f 3 , f 4 ) and duration determined such that different proportions of the different colours of particles are moved, dependent upon their transition frequencies and speeds. A reflective, saturated full colour display device may thereby be provided.
摘要翻译：描述了基于介电电泳的彩色显示装置。该装置包括介电电泳混合物，其包含在半绝缘液体（24）中的每个减色原色青色（32），品红色（34）和黄色（36）的半绝缘颗粒。颗粒的介电电泳频率特性对于相同颜色但不同于三种颜色的颗粒是相同或相似的。特别地，对于每种颜色，转变频率（f0）不同，或者如果具有反向感应介电电泳频率特性，则两种颜色可以具有相同的转变频率（f0）。此外，颗粒的速度对于相同颜色但在三种颜色之间不同的颗粒是相同的。像素由不同频率（f1，f2，f3，f4）的交变电压驱动，并且确定持续时间，使得不同比例的不同颜色的粒子被移动，取决于它们的转变频率和速度。由此可以提供反射饱和的全色显示装置。

3. 发明申请

WO2004006339A1 TFT ELECTRONIC DEVICES AND THEIR MANUFACTURE 审中-公开
标题翻译： TFT电子设备及其制造
公开(公告)号：WO2004006339A1
公开(公告)日：2004-01-15
申请号：PCT/IB2003/002883
申请日：2003-06-25
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , VAN DER ZAAG, Pieter, J. , YOUNG, Nigel, D. , FRENCH, Ian, D. , CHAPMAN, Jeffrey, A.
发明人： VAN DER ZAAG, Pieter, J. , YOUNG, Nigel, D. , FRENCH, Ian, D. , CHAPMAN, Jeffrey, A.
IPC分类号： H01L29/786
CPC分类号： H01L29/66765 , H01L29/78609 , H01L29/78678
摘要： An electronic device (70) comprises a thin film transistor (TFT) (9,59), the TFT including a channel (16) defined in a layer of polycrystalline semiconductor material (10,48). The polycrystalline semiconductor material is produced by crystallising amorphous semiconductor material (2) using metal atoms (6) to promote the crystallisation process. The polycrystalline semiconductor material (10) includes an average concentration of metal atoms in the range 1.3x1018 to 7.5x1018 atoms/cm3. This enables polycrystalline semiconductor TFTs to be formed with leakage properties acceptable for use in active matrix displays using a metal induced crystallisation process of duration significantly less that previously thought necessary. Furthermore, this process duration reduction facilitates the reliable fabrication of poly-Si TFTs having bottom gates formed of metal.
摘要翻译：电子器件（70）包括薄膜晶体管（TFT）（9,59），TFT包括限定在多晶半导体材料层（10,48）中的沟道（16）。通过使用金属原子（6）使非晶半导体材料（2）结晶以促进结晶过程来生产多晶半导体材料。多晶半导体材料（10）包括1.3×1018至7.5×1018原子/ cm3范围内的金属原子的平均浓度。这使得多晶半导体TFT可以形成为可用于有源矩阵显示器中的泄漏特性，其使用的金属诱导结晶过程的持续时间明显少于以前认为必要的时间。此外，该工艺持续时间缩短有助于可靠地制造具有由金属形成的底部栅极的多晶硅TFT。

4. 发明申请

WO2003040821A1 ACTIVE MATRIX PIXEL DEVICE 审中-公开
标题翻译：主动矩阵像素设备
公开(公告)号：WO2003040821A1
公开(公告)日：2003-05-15
申请号：PCT/IB2002/004542
申请日：2002-10-29
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V.
发明人： GREEN, Peter, W. , BATTERSBY, Stephen, J. , HUGHES, John, R. , FRENCH, Ian, D.
IPC分类号： G02F1/1362
CPC分类号： G02F1/1362 , G02F1/136227 , G02F1/13624
摘要： A method of constructing an active matrix pixel device uses a universal active matrix (UAM) comprising a matrix array of switching elements (20) whose spacing defines a base pitch and a pixel array comprising a matrix array of pixel electrodes (19) whose spacing defines a pixel pitch. The pixel pitch is greater than the base pitch. A large proportion of the construction process can be carried out before the customisation of the device. Using a common UAM enables a reduction in the time between the customer ordering the device and the completion time. The cost of meeting customer specific requirements for the fabrication of active matrix pixel devices is thus reduced.
摘要翻译：一种构造有源矩阵像素装置的方法使用包括开关元件20的矩阵阵列的通用有源矩阵UAM，开关元件20的间距限定了基本间距，以及包括像素电极19的矩阵阵列的像素阵列，其间隔限定了像素间距。像素间距大于基座间距。施工过程的很大一部分可以在设备定制之前进行。使用通用的UAM可以减少客户订购设备和完成时间之间的时间。因此，减少了用于制造有源矩阵像素装置的客户特定要求的成本。

5. 发明申请

WO2005106960A1 CO-PLANAR THIN FILM TRANSISTOR HAVING ADDITIONAL SOURCE/DRAIN INSULATION LAYER 审中-公开
标题翻译：具有附加源/漏绝缘层的CO-PLANAR薄膜晶体管
公开(公告)号：WO2005106960A1
公开(公告)日：2005-11-10
申请号：PCT/IB2005/051358
申请日：2005-04-26
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , WHIGHT, Kenneth, R. , FRENCH, Ian, D.
发明人： WHIGHT, Kenneth, R. , FRENCH, Ian, D.
IPC分类号： H01L29/786
CPC分类号： H01L29/78618 , H01L29/66606
摘要： A co-planar thin film transistor, TFT (22), and a method of fabricating the same, in which an additional insulating layer is provided on the source contact (30) and the drain contact (32) and defined such that a first region (34) of the additional insulating layer occupies substantially the same area as the source contact (30) and a second region (36) of the additional insulating layer occupies substantially the same area as the drain contact (32). This tends to provide a reduction in the gate (62) to source capacitance, and the gate (62) to drain capacitance. In some geometries this can be achieved without any additional masks or defining steps.
摘要翻译：一种共平面薄膜晶体管TFT（22）及其制造方法，其中在源极触点（30）和漏极触点（32）上设置附加绝缘层，并且被定义为使得第一区域所述附加绝缘层的所述第一区域（34）占据与所述源极接触件（30）大致相同的面积，并且所述附加绝缘层的第二区域（36）占据与所述漏极接触件（32）基本相同的面积。这倾向于提供栅极（62）到源极电容的减小，以及栅极（62）降低漏极电容。在一些几何形状中，这可以在没有任何附加掩模或限定步骤的情况下实现。

6. 发明申请

WO2004109640A1 ACTIVE MATRIX PIXEL DRIVE CIRCUIT FOR OLED DISPLAY 审中-公开
标题翻译：有源矩阵像素驱动电路用于OLED显示
公开(公告)号：WO2004109640A1
公开(公告)日：2004-12-16
申请号：PCT/IB2004/001863
申请日：2004-05-28
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , FISH, David, A. , DEANE, Steven, C. , HECTOR, Jason, R. , FRENCH, Ian, D.
发明人： FISH, David, A. , DEANE, Steven, C. , HECTOR, Jason, R. , FRENCH, Ian, D.
IPC分类号： G09G3/32
CPC分类号： G09G3/3233 , G09G2300/0819 , G09G2300/0852 , G09G2300/0876 , G09G2310/0251 , G09G2320/029 , G09G2320/043 , H01L27/3265
摘要： A display device has a plurality of pixels, each pixel having a current-driven display element (2) coupled between a first conductive layer (28) and a second conductive layer (27), the second conductive layer (27) being coupled to a current supply (26) via a switchable device (12) having a thin film component (122) on a first area of a substrate (120). Each pixel further has a first capacitive device having a first capacitor plate (132) on a second area of the substrate (120), the first capacitor plate (120) being conductively coupled to the thin film component, a second capacitor plate (133) and a first insulating layer (130) between the first capacitor plate (132) and the second capacitor plate (133). Stacked on top of the first capacitive device is a second capacitive device sharing the second capacitor plate (133) with the first capacitive device, the second capacitive device further comprising a third capacitor plate comprising at least a part of the second conductive layer (27), and a second insulating layer (140) between the second capacitor plate and the third capacitor plate. This arrangement benefits from larger capacitances for the first capacitive device and the second capacitive device, making them more robust against the influences of parasitic capacitances.
摘要翻译：显示装置具有多个像素，每个像素具有耦合在第一导电层（28）和第二导电层（27）之间的电流驱动显示元件（2），所述第二导电层（27）耦合到通过在基板（120）的第一区域上具有薄膜部件（122）的可切换装置（12）提供电流供应（26）。每个像素还具有第一电容器件，其具有在衬底（120）的第二区域上的第一电容器板（132），第一电容器板（120）导电耦合到薄膜部件，第二电容器板（133）以及在第一电容器板（132）和第二电容器板（133）之间的第一绝缘层（130）。堆叠在第一电容性器件的顶部的是第二电容器件，其与第一电容器件共享第二电容器板（133），第二电容器件还包括第三电容器板，该第三电容器板包括第二导电层（27）的至少一部分，，以及在第二电容器板和第三电容器板之间的第二绝缘层（140）。这种安排受益于第一电容性器件和第二电容器件的较大电容，使得它们相对于寄生电容的影响更坚固。

7. 发明申请

WO2002063386A2 METHOD OF IMPROVING THE CONDUCTIVITY OF TRANSPARENT CONDUCTOR LINES 审中-公开
标题翻译：改善透明导线的电导率的方法
公开(公告)号：WO2002063386A2
公开(公告)日：2002-08-15
申请号：PCT/IB2002/000216
申请日：2002-01-25
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V.
发明人： FRENCH, Ian, D. , VAN DER ZAAG, Pieter, J. , DE KUBBER, Daan, L.
IPC分类号： G02F1/1345
CPC分类号： G02F1/136286 , G02F2001/13629 , G02F2001/136295
摘要： A method of improving the electrical conductivity of transparent conducting lines (32) carried on a substrate (46), particularly address lines on the active plate for a pixellated device such as an active matrix liquid crystal display or the like fabricated using a low mask count process, involves forming the lines on the substrate from a deposited layer of transparent conducting material (53), e.g. ITO, and provided on their upper surface with a covering layer (72') extending from at least one end (75) and partially covering the surface, and then performing an electroplating operation to plate the lines (80) with a plating potential being applied at that end. The covering layer (72') assists in achieving a more uniform plated layer (80) along the length of the line. The covering layer preferably comprises photoresist defined by selective patterning and partial etching of a deposited photoresist layer (54) used for patterning the transparent layer (53). In a pixellated device, pixel electrodes (38) are also defined from the transparent layer.
摘要翻译：一种提高承载在基板（46）上的透明导电线（32）的导电性的方法，特别是使用低掩模计数制造的诸如有源矩阵液晶显示器等像素化器件的有源板上的地址线包括在透明导电材料（53）的沉积层上在衬底上形成线，例如， ITO，并且在其上表面上设置有从至少一个端部（75）延伸并部分地覆盖该表面的覆盖层（72'），然后进行电镀操作以使施加电镀电位的线（80）在那个时候覆盖层（72'）有助于沿着线的长度实现更均匀的镀层（80）。覆盖层优选地包括通过选择性图案化和部分蚀刻用于图案化透明层（53）的沉积的光致抗蚀剂层（54）限定的光致抗蚀剂。在像素化器件中，像素电极（38）也从透明层定义。

8. 发明申请

WO2007020576A1 ACTIVE MATRIX DISPLAY DEVICES 审中-公开
标题翻译：主动矩阵显示设备
公开(公告)号：WO2007020576A1
公开(公告)日：2007-02-22
申请号：PCT/IB2006/052769
申请日：2006-08-10
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , DEANE, Steven, C. , FRENCH, Ian, D. , KNAPP, Alan, G. , COLLINS, Paul , FISH, David, A.
发明人： DEANE, Steven, C. , FRENCH, Ian, D. , KNAPP, Alan, G. , COLLINS, Paul , FISH, David, A.
IPC分类号： G09G3/34 , G09G3/38
CPC分类号： G09G3/344 , G09G3/20 , G09G3/38 , G09G2300/0809 , G09G2300/0819 , G09G2300/0842 , G09G2300/088 , G09G2310/0251 , G09G2310/061 , G09G2320/0252 , G09G2320/029 , G09G2330/021 , G09G2360/148
摘要： A display device comprises an array of rows and columns of pixels disposed over a common substrate. Each pixel comprises a display pixel element having a stable drive state in which the optical characteristics remain substantially constant and a drive circuit for controlling the voltage applied to the display pixel element. An optical sensor arrangement of each pixel (PR1, R2) detects an optical signal dependent on the setting of the display pixel element, and the drive circuit comprises an optical feedback control system which is arranged to drive the display pixel element to the stable display state in response to an applied input pixel voltage and an output of the optical sensor arrangement, the optical characteristics being varied before the drive of the display pixel element reaches the stable state and being held substantially constant once the stable state has been reached. This approach removes the need to apply complicated voltage control schemes to the display element. Instead, a desired brightness is loaded into the pixel (as a voltage level), and optical feedback within the pixel is used to achieve the desired brightness level.
摘要翻译：显示装置包括布置在公共基板上的行和列列阵列。每个像素包括具有稳定驱动状态的显示像素元件，其中光学特性保持基本上恒定，以及用于控制施加到显示像素元件的电压的驱动电路。每个像素（PR1，R2）的光学传感器装置根据显示像素元件的设置检测光学信号，并且驱动电路包括光学反馈控制系统，其被布置为将显示像素元件驱动到稳定的显示状态响应于所施加的输入像素电压和光学传感器装置的输出，光学特性在显示像素元件的驱动达到稳定状态之前变化，并且一旦达到稳定状态就保持基本上不变。该方法消除了对显示元件应用复杂的电压控制方案的需要。相反，将期望的亮度加载到像素中（作为电压电平），并且使用像素内的光学反馈来实现期望的亮度水平。

9. 发明申请

WO2005050754A1 ACTIVE MATRIX DISPLAYS AND OTHER ELECTRONIC DEVICES HAVING PLASTIC SUBSTRATES 审中-公开
标题翻译：有源矩阵显示器和其他具有塑料基板的电子器件
公开(公告)号：WO2005050754A1
公开(公告)日：2005-06-02
申请号：PCT/IB2004/052458
申请日：2004-11-17
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , FRENCH, Ian, D. , MCCULLOCH, David, J.
发明人： FRENCH, Ian, D. , MCCULLOCH, David, J.
IPC分类号： G02F1/1333 , H01L27/15 , H01L27/32 , H01L51/52 , H01L51/56
CPC分类号： H01L27/1266 , G02F1/133305 , G02F1/167 , G02F2001/13415 , H01L21/6835 , H01L27/1214 , H01L27/3244 , H01L29/78603 , H01L51/524 , H01L51/56 , H01L2221/6835 , H01L2227/326 , H01L2251/5338
摘要： A method of manufacturing an active matrix display device involves manufacturing a first substrate arrangement comprising a rigid glass substrate and an overlying plastic substrate. Pixel circuits are formed over the plastic substrate. The rigid glass substrate (12) is only removed from the plastic substrate after the mounting of the active and passive plates of the display into display modules (10). This method enables substantially conventional substrate handling, processing and cell making to be employed, for example in standard AMLCD factories, with only minimal extra equipment needed. A more general manufacturing method is also disclosed for fabricating TFTs on a spin-on plastic layer.
摘要翻译：一种制造有源矩阵显示装置的方法涉及制造包括刚性玻璃基板和覆盖的塑料基板的第一基板布置。像素电路形成在塑料基板上。在将显示器的有源板和无源板安装到显示模块（10）中之后，刚性玻璃基板（12）仅从塑料基板上移除。该方法使得例如在标准AMLCD工厂中使用基本上常规的基板处理，处理和电池制造，仅需要最少的额外设备。还公开了用于在旋涂塑料层上制造TFT的更一般的制造方法。

10. 发明申请

WO2004030074A1 METHOD OF MANUFACTURING AN ELECTRONIC DEVICE COMPRISING A THIN FILM TRANSISTOR 审中-公开
标题翻译：制造包含薄膜晶体管的电子器件的方法
公开(公告)号：WO2004030074A1
公开(公告)日：2004-04-08
申请号：PCT/IB2003/003986
申请日：2003-09-12
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , YOUNG, Nigel, D. , YOON, Soo,Y. , FRENCH, Ian, D. , McCULLOCH, David, J.
发明人： YOUNG, Nigel, D. , YOON, Soo,Y. , FRENCH, Ian, D. , McCULLOCH, David, J.
IPC分类号： H01L21/336
CPC分类号： H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678
摘要： A method of manufacturing an electronic device comprising a thin film transistor (42), comprises forming a hydrogen-containing layer (22) over a semiconductor layer (10;20), irradiating the hydrogen-containing layer so as to hydrogenate the semiconductor layer, and then forming electrodes (24;26,28) over the semiconductor layer. A short diffusion length and direct path is provided for the hydrogen thus allowing rapid hydrogenation of the semiconductor layer using relatively few, high-fluence laser pulses. The supporting substrate (12) is not heated significantly making the method particularly useful for TFTs on polymer substrates. Crystallisation and hydrogenation of the semiconductor layer can be executed in the same irradiation step.
摘要翻译：一种制造包括薄膜晶体管（42）的电子器件的方法，包括在半导体层（10; 20）上形成含氢层（22），照射含氢层以氢化半导体层，然后在所述半导体层上形成电极（24; 26,28）。为氢提供了一个短的扩散长度和直接路径，从而允许使用相对较少的高通量激光脉冲来快速氢化半导体层。支撑衬底（12）不被显着加热，使得该方法对聚合物衬底上的TFT特别有用。可以在相同的照射步骤中执行半导体层的结晶和氢化。

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