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1. 发明申请

WO2005124828A2 ACTIVE MATRIX ELECTRONIC ARRAY DEVICE 审中-公开
标题翻译：主动矩阵电子阵列装置
公开(公告)号：WO2005124828A2
公开(公告)日：2005-12-29
申请号：PCT/IB2005/051870
申请日：2005-06-08
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , GREEN, Peter, W.
发明人： GREEN, Peter, W.
IPC分类号： H01L21/00
CPC分类号： H01L27/1296 , H01L27/1281 , H01L27/1285 , H01L29/66757 , H01L29/78606 , H01L29/78675
摘要： An active matrix device has an array (54) of device elements each comprising at least one thin film transistor (34). A thin film conductive heater element arrangement (10) is provided over a substrate of the device, and the semiconductor islands of the thin film transistors are provided over the heater element arrangement (10). The heating arrangement can remain in place in the device, thereby avoiding the need to remove the layers of the heater element arrangement during processing.
摘要翻译：有源矩阵器件具有每个包括至少一个薄膜晶体管（34）的器件元件阵列（54）。薄膜导电加热器元件布置（10）设置在器件的衬底上，并且薄膜晶体管的半导体岛设置在加热器元件布置（10）的上方。加热装置可以保持在装置中的适当位置，从而避免在加工过程中需要去除加热器元件装置的层。

2. 发明申请

WO2003040821A1 ACTIVE MATRIX PIXEL DEVICE 审中-公开
标题翻译：主动矩阵像素设备
公开(公告)号：WO2003040821A1
公开(公告)日：2003-05-15
申请号：PCT/IB2002/004542
申请日：2002-10-29
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V.
发明人： GREEN, Peter, W. , BATTERSBY, Stephen, J. , HUGHES, John, R. , FRENCH, Ian, D.
IPC分类号： G02F1/1362
CPC分类号： G02F1/1362 , G02F1/136227 , G02F1/13624
摘要： A method of constructing an active matrix pixel device uses a universal active matrix (UAM) comprising a matrix array of switching elements (20) whose spacing defines a base pitch and a pixel array comprising a matrix array of pixel electrodes (19) whose spacing defines a pixel pitch. The pixel pitch is greater than the base pitch. A large proportion of the construction process can be carried out before the customisation of the device. Using a common UAM enables a reduction in the time between the customer ordering the device and the completion time. The cost of meeting customer specific requirements for the fabrication of active matrix pixel devices is thus reduced.
摘要翻译：一种构造有源矩阵像素装置的方法使用包括开关元件20的矩阵阵列的通用有源矩阵UAM，开关元件20的间距限定了基本间距，以及包括像素电极19的矩阵阵列的像素阵列，其间隔限定了像素间距。像素间距大于基座间距。施工过程的很大一部分可以在设备定制之前进行。使用通用的UAM可以减少客户订购设备和完成时间之间的时间。因此，减少了用于制造有源矩阵像素装置的客户特定要求的成本。

3. 发明申请

WO2004019400A1 THIN FILM TRANSISTOR 审中-公开
标题翻译：薄膜晶体管
公开(公告)号：WO2004019400A1
公开(公告)日：2004-03-04
申请号：PCT/IB2003/003477
申请日：2003-08-06
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , GREEN, Peter, W.
发明人： GREEN, Peter, W.
IPC分类号： H01L21/336
CPC分类号： H01L29/66765 , H01L29/41733 , H01L29/42384 , H01L29/78618 , H01L29/78642 , H01L29/78696
摘要： A method of fabricating a TFT comprises: etching a base layer structure (9) on a substrate (1) so as to form a gate (4) with inclined side edges (4a, 4b) that extend towards an apex region (12) with a tip (13) of a radius of a few nanometers, depositing an amorphous silicon channel layer (6) over the inclined side edges and the apex region, depositing a metal layer (8) over the channel layer so as to cover the apex region and the side edges, applying a layer of masking material (14) over the conductive material and selectively etching it so that the metal layer (8) in the apex region protrudes through and upstands from the masking material, and selectively etching the metal (8) that protrudes through the masking material (14) in the apex region such as to provide separate, self aligned source and drain regions (8a, 8b) overlying the inclined edges with a short channel (L) between them.
摘要翻译：一种制造TFT的方法包括：蚀刻衬底（1）上的基底层结构（9），以便形成具有向顶点区域（12）延伸的倾斜侧边缘（4a，4b）的栅极（4）半径为几纳米的尖端（13），在所述倾斜侧边缘和所述顶点区域上沉积非晶硅沟道层（6），在所述沟道层上沉积金属层（8）以覆盖所述顶点区域和侧边缘，在导电材料上施加一层掩模材料（14）并选择性地蚀刻它，使得顶点区域中的金属层（8）从掩模材料突出并仰卧起来，并且选择性地蚀刻金属（8 ），其突出穿过顶点区域中的掩模材料（14），以便在它们之间具有在其上具有短通道（L）的分开的自对准的源极和漏极区域（8a，8b）。

4. 发明申请

WO2002077702A1 DISPLAY SUBSTRATE WITH AN INTEGRATED ACOUSTIC TRANSDUCER 审中-公开
标题翻译：具有集成式声学传感器的显示基板
公开(公告)号：WO2002077702A1
公开(公告)日：2002-10-03
申请号：PCT/IB2002/000642
申请日：2002-03-04
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V.
发明人： MURDEN, Vega , GREEN, Peter, W.
IPC分类号： G02F1/1333
CPC分类号： H04R19/005 , G02F1/1333 , G02F1/133308 , H04R17/02 , H04R19/016 , H04R31/00
摘要： A display substrate (1) comprising a plate, for example a glass plate (2), on which display elements, e.g. pixels (4-8) comprising pixel electrodes (72) and thin-film-transistors (69), and an acoustic transducer (10), e.g. a microphone, speaker or buzzer, formed from thin film layers over a cavity (28), are formed. The cavity (28) may be provided by powderblasting through the depth of the glass plate (2). The display substrate (1) with integrated acoustic transducer (10) may be incorporated in a display device, e.g. a liquid crystal display device (11). Also described is a discrete acoustic transducer, comprising a plate of an insulating material (102), a cavity (120) in the plate (102), a plurality of layers that have been deposited on the plate, and a moveable member (122) formed from the deposited layers and positioned over the cavity (120).
摘要翻译：显示基板（1），其包括板，例如玻璃板（2），显示元件包括像素电极（72）和薄膜晶体管（69）的像素（4-8）和声变换器（10）形成由空腔（28）上的薄膜层形成的麦克风，扬声器或蜂鸣器。空腔（28）可以通过玻璃板（2）的深度的粉末喷射来提供。具有集成的声换能器（10）的显示基板（1）可以结合在显示装置中。液晶显示装置（11）。还描述了一种离散的声换能器，包括绝缘材料（102）的板，板（102）中的空腔（120），已经沉积在板上的多个层和可移动构件（122）由沉积的层形成并定位在空腔（120）上方。

5. 发明公开

EP1129490A1 THYRISTORS AND THEIR MANUFACTURE 有权
标题翻译：可控硅及其制造方法
公开(公告)号：EP1129490A1
公开(公告)日：2001-09-05
申请号：EP00953146.8
申请日：2000-08-02
申请人： Koninklijke Philips Electronics N.V.
发明人： GREEN, Peter, W.
IPC分类号： H01L29/74 , H01L29/06
CPC分类号： H01L29/0619 , H01L29/74 , H01L29/747
摘要： The forward and reverse blocking voltage capability of a thyristor in accordance with the invention is substantially independent of the active thyristor area (Aa), thereby facilitating its design and its manufacture. This is achieved by means of a concentric arrangement of a deep inner lower-doped perimeter zone (42) of the forward base region (2) with a deep outer perimeter zone (43) of the same conductivity type, doping profile and depth (A4xj=Axj). The outer perimeter zone (43) brings the reverse blocking p-n junction (34) to the front surface (11) at a lateral distance (D3) around the forward blocking p-n junction (32). The outer perimeter zone (43) extends in depth to a lower perimeter zone (44) of the underlying region (4) that forms the reverse blocking junction with the high-resistivity base region (3) of opposite conductivity type. All these perimeter zones (42-44) together provide the thyristor with a deep peripheral termination which surrounds the active thyristor area (Aa). By making the inner and outer perimeter zones (42, 43) much deeper than the surrounded forward base region (2), the forward and reverse blocking voltage capability of the thyristor is determined substantially independently of the doping of the forward base region (2) and layout geometry of the N-P-N-P or N-P-N-P-N region structure in the active thyristor area (Aa). This doping and layout geometry can be chosen to give different magnitudes of transistor gain and different thyristor switching characteristics, all within the same peripheral termination. Current conduction in the lower-doped perimeter zone (42) is less than in the highly-doped, highly-conductive base perimeter of prior-art planar thyristors and may even be pinched off from the active area (Aa), so easing the layout design of emitter-base shorts (1a) in the active area (Aa).

6. 发明授权

EP1444544B1 ACTIVE MATRIX PIXEL DEVICE 有权
标题翻译：有源矩阵像素装置
公开(公告)号：EP1444544B1
公开(公告)日：2008-01-23
申请号：EP02779807.3
申请日：2002-10-29
申请人： Koninklijke Philips Electronics N.V.
发明人： GREEN, Peter, W. , BATTERSBY, Stephen, J. , HUGHES, John, R. , FRENCH, Ian, D.
IPC分类号： G02F1/1362
CPC分类号： G02F1/1362 , G02F1/136227 , G02F1/13624
摘要： A method of constructing an active matrix pixel device uses a universal active matrix (UAM) comprising a matrix array of switching elements (20) whose spacing defines a base pitch and a pixel array comprising a matrix array of pixel electrodes (19) whose spacing defines a pixel pitch. The pixel pitch is greater than the base pitch. A large proportion of the construction process can be carried out before the customisation of the device. Using a common UAM enables a reduction in the time between the customer ordering the device and the completion time. The cost of meeting customer specific requirements for the fabrication of active matrix pixel devices is thus reduced.

7. 发明公开

EP1373973A1 DISPLAY SUBSTRATE WITH AN INTEGRATED ACOUSTIC TRANSDUCER 审中-公开
标题翻译：具有集成声转换显示基板
公开(公告)号：EP1373973A1
公开(公告)日：2004-01-02
申请号：EP02702610.3
申请日：2002-03-04
申请人： Koninklijke Philips Electronics N.V.
发明人： MURDEN, Vega , GREEN, Peter, W.
IPC分类号： G02F1/1333 , G02F1/13 , H04M1/02 , H04R1/28 , H04R17/02
CPC分类号： H04R19/005 , G02F1/1333 , G02F1/133308 , H04R17/02 , H04R19/016 , H04R31/00
摘要： A display substrate (1) comprising a plate, for example a glass plate (2), on which display elements, e.g. pixels (4-8) comprising pixel electrodes (72) and thin-film-transistors (69), and an acoustic transducer (10), e.g. a microphone, speaker or buzzer, formed from thin film layers over a cavity (28), are formed. The cavity (28) may be provided by powderblasting through the depth of the glass plate (2). The display substrate (1) with integrated acoustic transducer (10) may be incorporated in a display device, e.g. a liquid crystal display device (11). Also described is a discrete acoustic transducer, comprising a plate of an insulating material (102), a cavity (120) in the plate (102), a plurality of layers that have been deposited on the plate, and a moveable member (122) formed from the deposited layers and positioned over the cavity (120).

8. 发明公开

EP1444544A1 ACTIVE MATRIX PIXEL DEVICE 有权
标题翻译：有源矩阵像素装置
公开(公告)号：EP1444544A1
公开(公告)日：2004-08-11
申请号：EP02779807.3
申请日：2002-10-29
申请人： Koninklijke Philips Electronics N.V.
发明人： GREEN, Peter, W. , BATTERSBY, Stephen, J. , HUGHES, John, R. , FRENCH, Ian, D.
IPC分类号： G02F1/1362
CPC分类号： G02F1/1362 , G02F1/136227 , G02F1/13624
摘要： A method of constructing an active matrix pixel device uses a universal active matrix (UAM) comprising a matrix array of switching elements (20) whose spacing defines a base pitch and a pixel array comprising a matrix array of pixel electrodes (19) whose spacing defines a pixel pitch. The pixel pitch is greater than the base pitch. A large proportion of the construction process can be carried out before the customisation of the device. Using a common UAM enables a reduction in the time between the customer ordering the device and the completion time. The cost of meeting customer specific requirements for the fabrication of active matrix pixel devices is thus reduced.

9. 发明公开

EP1346410A1 FLEXIBLE ELECTRONIC DEVICE 审中-公开
标题翻译：柔性电子器件
公开(公告)号：EP1346410A1
公开(公告)日：2003-09-24
申请号：EP01998999.5
申请日：2001-11-23
申请人： Koninklijke Philips Electronics N.V.
发明人： GREEN, Peter, W.
IPC分类号： H01L23/12 , H01L21/48 , H01L27/12 , H01L27/04 , H01L21/822 , H01L21/84
CPC分类号： H05K1/0278 , H01L23/5381 , H01L27/00 , H01L29/0657 , H01L2924/0002 , H01L2924/12044 , H05K1/0306 , H05K3/0064 , H05K3/4092 , H05K2201/0191 , H05K2201/0394 , H05K2201/09036 , H05K2203/302 , H01L2924/00
摘要： An electronic device (38) for mounting on a curved or flexible support (42) and a method for fabrication of the same. The electronic device comprises a flexible substrate (18) and a layer (2) of rigid material over the substrate having electronic components on its upper surface. Weakened regions (6) of the rigid layer (2) define contiguous portions of the rigid layer, and flexible connectors (16) extend between components on different portions. The rigid layer (2) can be fractured along the weakened regions (6) to afford flexibility.

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