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    • 1. 发明授权
    • Toner for electrostatic image development
    • 调色剂用于静电图像显影
    • US08685606B2
    • 2014-04-01
    • US13446427
    • 2012-04-13
    • Junya OnishiShiro HiranoSatoshi UchinoNoboru UedaShinya Obara
    • Junya OnishiShiro HiranoSatoshi UchinoNoboru UedaShinya Obara
    • G03G9/00
    • G03G9/09328G03G9/09364G03G9/09392
    • Disclosed is a toner for electrostatic image development that satisfies both low-temperature fixing ability and excellent high-temperature storage stability, achieves excellent charge property and shatter resistance, and consequently can form a high-quality image even by a high-performance machine such as a high-speed machine.The toner is composed of toner particles obtained by forming a shell layer containing a styrene-acryl-modified polyester resin on the surface of each of core particles comprising a binder resin containing at least a styrene-acrylic resin. The styrene-acryl-modified polyester resin is obtained bonding a styrene-acrylic polymer segment to a terminal of a polyester segment, and the content of the styrene-acrylic polymer segment in the styrene-acryl-modified polyester resin is 5% by mass or more and 30% by mass or less.
    • 公开了一种静电图像显影用调色剂,其既满足低温定影性也具有优异的高温保存稳定性,可以获得优异的充电性和抗碎裂性,并且因此即使通过高性能机器也能形成高质量的图像,例如 一台高速机。 该调色剂由在包含至少含有苯乙烯 - 丙烯酸树脂的粘合剂树脂的每个核心颗粒的表面上形成含有苯乙烯 - 丙烯酸改性聚酯树脂的壳层而获得的调色剂颗粒组成。 得到苯乙烯 - 丙烯酸改性聚酯树脂,将苯乙烯 - 丙烯酸聚合物链段连接到聚酯链段的末端,苯乙烯 - 丙烯酸改性聚酯树脂中苯乙烯 - 丙烯酸聚合物链段的含量为5质量% 多于30质量%以下。
    • 10. 发明授权
    • Non-volatile semiconductor device
    • 非易失性半导体器件
    • US08530877B2
    • 2013-09-10
    • US13182696
    • 2011-07-14
    • Junya OnishiShinobu YamazakiKazuya IshiharaYushi InoueYukio TamaiNobuyoshi Awaya
    • Junya OnishiShinobu YamazakiKazuya IshiharaYushi InoueYukio TamaiNobuyoshi Awaya
    • H01L47/00
    • H01L45/04H01L27/2436H01L45/1233H01L45/146
    • A variable resistance element that can stably perform a switching operation with a property variation being reduced by suppressing a sharp current that accompanies completion of forming process, and a non-volatile semiconductor memory device including the variable resistance element are realized. The non-volatile semiconductor memory device uses the variable resistance element for storing information in which a resistance changing layer is interposed between a first electrode and a second electrode, and a buffer layer is inserted between the first electrode and the resistance changing layer where a switching interface is formed. The buffer layer and the resistance changing layer include n-type metal oxides, and materials of the buffer layer and the resistance changing layer are selected such that energy at a bottom of a conduction band of the n-type metal oxide configuring the buffer layer is lower than that of the n-type metal oxide configuring the resistance changing layer.
    • 通过抑制伴随着成形处理的完成的尖锐电流,可以稳定地进行具有特性变化的开关动作的可变电阻元件,以及包括该可变电阻元件的非易失性半导体存储器件。 非易失性半导体存储器件使用可变电阻元件来存储在第一电极和第二电极之间插入电阻变化层的信息,并且缓冲层插入在第一电极和电阻变化层之间,其中开关 界面形成。 缓冲层和电阻变化层包括n型金属氧化物,并且选择缓冲层和电阻变化层的材料,使得构成缓冲层的n型金属氧化物的导带的底部的能量为 低于构成电阻变化层的n型金属氧化物。