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1. 发明授权

US6115116A Waveguide-type variable-sensitivity semiconductor photodetector 有权
标题翻译：波导型可变敏感半导体光电探测器
公开(公告)号：US6115116A
公开(公告)日：2000-09-05
申请号：US134344
申请日：1998-08-14
申请人： Junji Yoshida , Noriyuki Yokouchi , Takeharu Yamaguchi , Kazuaki Nishikata
发明人： Junji Yoshida , Noriyuki Yokouchi , Takeharu Yamaguchi , Kazuaki Nishikata
IPC分类号： H01L31/00 , H01L31/0232 , H01S5/00 , H01S5/026 , H01S5/323
CPC分类号： H01L31/0232
摘要： A waveguide-type variable-sensitivity semiconductor photodetector has a waveguide photodetector area and an optical attenuation area formed on an n-InP substrate. The optical attenuation area includes a GaInAs optical waveguide layer having a bandgap energy of 0.85 eV, a pair of upper and lower cladding layers each having a bandgap energy of 1.35 eV and an intermediate layer disposed at the heterojunction interface between the optical waveguide layer and the upper cladding layer and having a bandgap energy of 1.0 eV. A pile-up of halls at the heterojunction interface is prevented by the intermediate layer to improve the linearity of the output optical signal to the input optical signal.
摘要翻译：波导型可变灵敏度半导体光电检测器具有在n-InP衬底上形成的波导光电检测器区域和光学衰减区域。光衰减区域包括具有0.85eV的带隙能量的GaInAs光波导层，一对具有1.35eV的带隙能量的上下包层，以及设置在光波导层与光波导层之间的异质结界面处的中间层上覆层，具有1.0eV的带隙能。通过中间层防止异质结界面处的堆叠堆叠，以提高输出光信号对输入光信号的线性。

2. 发明授权

US5973339A Semiconductor photodetector having an optical attenuator 失效
标题翻译：具有光衰减器的半导体光电探测器
公开(公告)号：US5973339A
公开(公告)日：1999-10-26
申请号：US968163
申请日：1997-11-12
申请人： Noriyuki Yokouchi , Takeharu Yamaguchi , Junji Yoshida
发明人： Noriyuki Yokouchi , Takeharu Yamaguchi , Junji Yoshida
IPC分类号： H01L31/10 , H01L31/0232 , H01L29/205 , H01L31/0304 , G02F1/015
CPC分类号： H04B10/671
摘要： A waveguide type semiconductor photodetector device comprises a photosensitive section including a photo-absorption layer for converting a signal light into an electric signal, and an optical attenuation section including an optical attenuation layer made of a bulk crystal for attenuating incident light. Assuming that E.sub.g.ATT and E.sub.in are bandgap energy of the optical attenuation layer and optical energy of the incident light signal, respectively, E.sub.in +50 meV.ltoreq.E.sub.g,ATT .ltoreq.E.sub.in +100 meV holds. The optical absorption layer and the optical attenuation layer are made of GaInAs and GaInAsP, respectively, for adapting to incident light of a 1.55 mm wavelength.
摘要翻译：波导型半导体光电检测器装置包括：感光部分，包括用于将信号光转换成电信号的光吸收层;以及光衰减部分，包括由用于衰减入射光的本体晶体制成的光衰减层。假设Eg.ATT和Ein分别是光衰减层的能带能量和入射光信号的光能量，Ein + 50meV = Eg，ATT

3. 发明授权

US07564563B2 Laser gyro and electronic device using the same 有权
标题翻译：激光陀螺仪和电子设备使用相同
公开(公告)号：US07564563B2
公开(公告)日：2009-07-21
申请号：US11806486
申请日：2007-05-31
申请人： Noriyuki Yokouchi , Junji Yoshida , Takahisa Harayama , Takehiro Fukushima , Akihiko Kasukawa , Shuichi Tamura , Keizou Inagaki , Morito Matsuoka
发明人： Noriyuki Yokouchi , Junji Yoshida , Takahisa Harayama , Takehiro Fukushima , Akihiko Kasukawa , Shuichi Tamura , Keizou Inagaki , Morito Matsuoka
IPC分类号： G01C19/72
CPC分类号： G01C19/66
摘要： A laser gyro of the present invention includes laser light excitation means (a semiconductor laser device 100) that excites first and second laser lights propagating in the opposite directions to each other in a circular ring-shaped path (an optical path 40), coupling means (optical waveguides 41 and 42) for superimposing the first and the second laser lights, and a photodetector for observing an interference signal generated by the superimposed first and second laser lights.
摘要翻译：本发明的激光陀螺仪包括：激光激发装置（半导体激光装置100），其激励在圆形环状路径（光路40）中以相反的方向传播的第一和第二激光，耦合装置（光波导41和42），用于重叠第一和第二激光;以及光电检测器，用于观察由叠加的第一和第二激光产生的干涉信号。

4. 发明申请

US20100245987A1 SEMICONDUCTOR OPTICAL AMPLIFIER 失效
标题翻译：半导体光放大器
公开(公告)号：US20100245987A1
公开(公告)日：2010-09-30
申请号：US12708043
申请日：2010-02-18
申请人： Hideaki Hasegawa , Masaki Funabashi , Noriyuki Yokouchi , Junji Yoshida
发明人： Hideaki Hasegawa , Masaki Funabashi , Noriyuki Yokouchi , Junji Yoshida
IPC分类号： H01S3/063 , H01S3/094
CPC分类号： H01S5/50 , H01S5/028 , H01S5/1032 , H01S5/3211 , H01S2304/04
摘要： It is desirable to provide a semiconductor optical amplifier from which it becomes able to obtain a higher output power. A semiconductor optical amplifier in comprises an active wave guiding layer which comprises a passive core region that is formed of a semiconductor, and active cladding regions that are located at both sides of the passive core region and each of that is comprised of an active layer which is formed of a semiconductor and which has an index of refraction to be lower than that of the passive core region, wherein a light is wave guided with being amplified in the active wave guiding layer. Moreover, it is desirable for the active wave guiding layer to be formed of a compound semiconductor, and to be formed by integrating the passive core region and the active cladding regions to be monolithic on to a substrate that is formed of a compound semiconductor by making use of a process of a butt joint growth.
摘要翻译：期望提供一种能够获得更高输出功率的半导体光放大器。一种半导体光放大器，包括有源波导层，该有源波导层包括由半导体形成的被动核心区域和位于被动核心区域两侧的有源包层区域，其中每一个包括有源层，由半导体形成，其折射率低于无源芯区域的折射率，其中光在有源波导层中被放大而被波导。此外，期望有源波导层由化合物半导体形成，并且通过将被动核区域和有源包层区域整体地组合到由化合物半导体形成的基板上而形成使用对接联合成长过程。

5. 发明授权

US08547631B2 Semiconductor optical amplifier 失效
标题翻译：半导体光放大器
公开(公告)号：US08547631B2
公开(公告)日：2013-10-01
申请号：US12708043
申请日：2010-02-18
申请人： Hideaki Hasegawa , Masaki Funabashi , Noriyuki Yokouchi , Junji Yoshida
发明人： Hideaki Hasegawa , Masaki Funabashi , Noriyuki Yokouchi , Junji Yoshida
IPC分类号： H01S5/50 , H01S5/20
CPC分类号： H01S5/50 , H01S5/028 , H01S5/1032 , H01S5/3211 , H01S2304/04
摘要： It is desirable to provide a semiconductor optical amplifier from which it becomes able to obtain a higher output power. A semiconductor optical amplifier in comprises an active wave guiding layer which comprises a passive core region that is formed of a semiconductor, and active cladding regions that are located at both sides of the passive core region and each of that is comprised of an active layer which is formed of a semiconductor and which has an index of refraction to be lower than that of the passive core region, wherein a light is wave guided with being amplified in the active wave guiding layer. Moreover, it is desirable for the active wave guiding layer to be formed of a compound semiconductor, and to be formed by integrating the passive core region and the active cladding regions to be monolithic on to a substrate that is formed of a compound semiconductor by making use of a process of a butt joint growth.
摘要翻译：期望提供一种能够获得更高输出功率的半导体光放大器。一种半导体光放大器，包括有源波导层，该有源波导层包括由半导体形成的被动核心区域和位于被动核心区域两侧的有源包层区域，其中每一个包括有源层，由半导体形成，其折射率低于无源芯区域的折射率，其中光在有源波导层中被放大而被波导。此外，期望有源波导层由化合物半导体形成，并且通过将被动核区域和有源包层区域整体地组合到由化合物半导体形成的基板上而形成使用对接联合成长过程。

6. 发明申请

US20070291273A1 Laser gyro and electronic device using the same 有权
标题翻译：激光陀螺仪和电子设备使用相同
公开(公告)号：US20070291273A1
公开(公告)日：2007-12-20
申请号：US11806486
申请日：2007-05-31
申请人： Noriyuki Yokouchi , Junji Yoshida , Takahisa Harayama , Takehiro Fukushima , Akihiko Kasukawa , Shuichi Tamura , Keizou Inagaki , Morito Matsuoka
发明人： Noriyuki Yokouchi , Junji Yoshida , Takahisa Harayama , Takehiro Fukushima , Akihiko Kasukawa , Shuichi Tamura , Keizou Inagaki , Morito Matsuoka
IPC分类号： G01C19/66
CPC分类号： G01C19/66
摘要： A laser gyro of the present invention includes laser light excitation means (a semiconductor laser device 100) that excites first and second laser lights propagating in the opposite directions to each other in a circular ring-shaped path (an optical path 40), coupling means (optical waveguides 41 and 42) for superimposing the first and the second laser lights, and a photodetector for observing an interference signal generated by the superimposed first and second laser lights.
摘要翻译：本发明的激光陀螺仪包括：激光激发装置（半导体激光装置100），其激励在圆形环状路径（光路40）中以相反的方向传播的第一和第二激光，耦合装置（光波导41和42），用于重叠第一和第二激光;以及光电检测器，用于观察由叠加的第一和第二激光产生的干涉信号。

7. 发明授权

US07885312B2 Surface emitting semiconductor laser element 失效
标题翻译：表面发射半导体激光元件
公开(公告)号：US07885312B2
公开(公告)日：2011-02-08
申请号：US12219997
申请日：2008-07-31
申请人： Tomofumi Kise , Noriyuki Yokouchi
发明人： Tomofumi Kise , Noriyuki Yokouchi
IPC分类号： H01S3/08
CPC分类号： H01S5/18305 , B82Y20/00 , H01S5/0425 , H01S5/105 , H01S5/18319 , H01S5/18377 , H01S5/34306 , H01S2301/166 , H01S2302/00
摘要： A surface emitting laser is provided with an upper reflecting mirror having a photonic crystal structure with a point defect at the center, and emits a laser beam from the side of a lower reflecting mirror. An upper electrode is formed on the point defect at the center, and element resistance is reduced. A material transparent to a wavelength of the laser beam is used for a substrate. The emission efficiency is improved by reducing the element resistance of the photonic crystal surface emitting laser.
摘要翻译：表面发射激光器设置有具有在中心具有点缺陷的光子晶体结构的上反射镜，并且从下反射镜侧发射激光束。在中心的点缺陷处形成上电极，并且元件电阻降低。将对激光束的波长透明的材料用于基板。通过降低光子晶体表面发射激光器的元件电阻来提高发射效率。

8. 发明申请

US20100111468A1 OPTICAL INTEGRATED CIRCUIT AND OPTICAL INTEGRATED CIRCUIT MODULE 审中-公开
标题翻译：光集成电路和光集成电路模块
公开(公告)号：US20100111468A1
公开(公告)日：2010-05-06
申请号：US12482233
申请日：2009-06-10
申请人： Masaki FUNABASHI , Junichi Hasegawa , Takeshi Akutsu , Kazutaka Nara , Noriyuki Yokouchi
发明人： Masaki FUNABASHI , Junichi Hasegawa , Takeshi Akutsu , Kazutaka Nara , Noriyuki Yokouchi
IPC分类号： G02B6/122
CPC分类号： G02B6/12004 , G02B6/12021
摘要： An optical integrated circuit includes a planar lightwave circuit, and a semiconductor element, which are fixed at one contact surface. A semiconductor optical amplifier (SOA) and a turnaround waveguide having a turnaround portion are formed on a semiconductor substrate. The turnaround waveguide is turned around on the second substrate and is connected to an output port of the SOA. An input port and an output port of the turnaround waveguide are optically coupled at the contact surface with an input port and an output port of the optical waveguides respectively.
摘要翻译：光学集成电路包括固定在一个接触表面的平面光波电路和半导体元件。在半导体衬底上形成半导体光放大器（SOA）和具有折回部分的周转波导。转向波导在第二基板上转动并连接到SOA的输出端口。转向波导的输入端口和输出端口在接触表面处分别与光波导的输入端口和输出端口耦合。

9. 发明授权

US5666375A Semiconductor quantum well laser having a low threshold current density 失效
标题翻译：具有低阈值电流密度的半导体量子阱激光器
公开(公告)号：US5666375A
公开(公告)日：1997-09-09
申请号：US555472
申请日：1995-11-08
申请人： Noriyuki Yokouchi , Nobumitsu Yamanaka , Akihiko Kasukawa
发明人： Noriyuki Yokouchi , Nobumitsu Yamanaka , Akihiko Kasukawa
IPC分类号： H01C3/18 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/3434 , H01S5/3409 , H01S5/34306
摘要： The present invention gives rise to a 1.3 .mu.m tensile-strained quantum well laser having a quantum well active layer which can be structurally specified as In.sub.1-x Ga.sub.x As.sub.y P.sub.1-y with X between 0.42 and 0.55 and Y between 0.8 and 0.75. The InGaAsP active layer needs to have a tensile stress between 1.0 and 1.5% and can be fabricated without any substantial phase-separation between InP and GaAs. The 1.3 .mu.m tensile-strained quantum well laser is equipped with a remarkably meager threshold current density of less than 0.2 kA/cm.sup.2. The preferable tensile strain ranges between from 1.2 to 1.4% or thereabout.
摘要翻译：本发明产生了具有量子阱活性层的1.3μm拉伸应变量子阱激光器，该量子阱活性层可以在结构上被定义为In1-xGaxAsyP1-y，X在0.42和0.55之间，Y在0.8和0.75之间。 InGaAsP有源层需要具有1.0至1.5％的拉伸应力，并且可以在InP和GaAs之间没有任何实质相分离的情况下制造。 1.3μm拉伸应变量子阱激光器的阈值电流密度极小，小于0.2kA / cm2。优选的拉伸应变范围在1.2至1.4％之间或其附近。

10. 发明授权

US07525726B2 Photonic crystal semiconductor device and production method thereof 失效
标题翻译：光子晶体半导体器件及其制造方法
公开(公告)号：US07525726B2
公开(公告)日：2009-04-28
申请号：US11505428
申请日：2006-08-17
申请人： Tomofumi Kise , Tatsuya Kimoto , Noriyuki Yokouchi , Toshihiko Baba
发明人： Tomofumi Kise , Tatsuya Kimoto , Noriyuki Yokouchi , Toshihiko Baba
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , G02B6/1225 , G02F1/01708 , G02F1/025 , G02F2201/346 , G02F2202/32 , G02F2203/055 , H01S5/0265 , H01S5/105 , H01S5/12 , H01S5/18311 , H01S5/18319 , H01S5/18369 , H01S5/2027
摘要： To provide a photonic crystal semiconductor device which enables various kinds of optical devices having a photonic crystal structure which is readily formed using a semiconductor and a semiconductor manufacturing process, and a manufacturing method thereof. The object can be achieved by a photonic crystal structure, including a lower DBR layer 1, a core layer 2, an upper DBR layer 3, and a dielectric multilayer film 6 which are sequentially laminated from an n-InP substrate 11 side, a plurality of holes 9 formed in the direction of a film thickness in the core layer 2 and the upper DBR layer 3, and a line defect portion 10 with none of the plurality of holes formed therein and disposed between the plurality of holes 9, wherein the line defect portion 10 serves as an optical waveguide.
摘要翻译：本发明提供一种光子晶体半导体器件及其制造方法，该光子晶体半导体器件能够实现使用半导体和半导体制造工艺容易地形成的具有光子晶体结构的各种光学器件。该目的可以通过光子晶体结构实现，其包括从n-InP衬底11侧依次层叠的下DBR层1，芯层2，上DBR层3和电介质多层膜6，多个形成在芯层2和上DBR层3中的膜厚度方向上的孔9以及在其中形成有多个孔并且设置在多个孔9之间的线缺陷部10，其中线缺陷部分10用作光波导。

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