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1. 发明授权

US6115116A Waveguide-type variable-sensitivity semiconductor photodetector 有权
标题翻译：波导型可变敏感半导体光电探测器
公开(公告)号：US6115116A
公开(公告)日：2000-09-05
申请号：US134344
申请日：1998-08-14
申请人： Junji Yoshida , Noriyuki Yokouchi , Takeharu Yamaguchi , Kazuaki Nishikata
发明人： Junji Yoshida , Noriyuki Yokouchi , Takeharu Yamaguchi , Kazuaki Nishikata
IPC分类号： H01L31/00 , H01L31/0232 , H01S5/00 , H01S5/026 , H01S5/323
CPC分类号： H01L31/0232
摘要： A waveguide-type variable-sensitivity semiconductor photodetector has a waveguide photodetector area and an optical attenuation area formed on an n-InP substrate. The optical attenuation area includes a GaInAs optical waveguide layer having a bandgap energy of 0.85 eV, a pair of upper and lower cladding layers each having a bandgap energy of 1.35 eV and an intermediate layer disposed at the heterojunction interface between the optical waveguide layer and the upper cladding layer and having a bandgap energy of 1.0 eV. A pile-up of halls at the heterojunction interface is prevented by the intermediate layer to improve the linearity of the output optical signal to the input optical signal.
摘要翻译：波导型可变灵敏度半导体光电检测器具有在n-InP衬底上形成的波导光电检测器区域和光学衰减区域。光衰减区域包括具有0.85eV的带隙能量的GaInAs光波导层，一对具有1.35eV的带隙能量的上下包层，以及设置在光波导层与光波导层之间的异质结界面处的中间层上覆层，具有1.0eV的带隙能。通过中间层防止异质结界面处的堆叠堆叠，以提高输出光信号对输入光信号的线性。

2. 发明授权

US07974327B2 Surface emitting laser element array 有权
标题翻译：表面发射激光元件阵列
公开(公告)号：US07974327B2
公开(公告)日：2011-07-05
申请号：US12224719
申请日：2006-09-01
申请人： Maiko Ariga , Takeo Kageyama , Norihiro Iwai , Kazuaki Nishikata
发明人： Maiko Ariga , Takeo Kageyama , Norihiro Iwai , Kazuaki Nishikata
IPC分类号： H01S5/183 , H01S5/42
CPC分类号： H01S5/423 , H01L2224/48091 , H01L2224/49175 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/06226 , H01S5/18313 , H01S5/18341 , H01S2301/176 , H01S2301/18 , H01L2924/00014
摘要： A surface emitting laser element array comprises a plurality of surface emitting laser elements (15) on a same substrate (1) each comprising a mesa post formed of a laminated structure including an active layer (4) for reducing a crosstalk between the surface emitting laser elements constituting the surface emitting laser element array, and for improving a high speed response, wherein each of the surface emitting laser elements (15) comprises a first electrode (9), a second electrode (10) and a third electrode (11) that have a polarity different from that of the first electrode (9); the first electrode (9) is arranged on the mesa post; the second electrode (10) is arranged on one surface of the substrate (1) same as that of the first electrode (9); the third electrode (11) is arranged on the other surface of the substrate (1) opposite to that of the first electrode and the second electrode (9, 10) and is provided as a common electrode of the surface emitting laser elements (15); and an electric current is applied to the active layer (4) using the first electrode (9) and the second electrode (10).
摘要翻译：表面发射激光元件阵列包括在同一衬底（1）上的多个表面发射激光器元件（15），每个表面发射激光器元件（15）包括由包括有源层（4）形成的层叠结构形成的台面柱，用于减少表面发射激光器构成表面发射激光元件阵列的元件，并且用于改善高速响应，其中每个表面发射激光器元件（15）包括第一电极（9），第二电极（10）和第三电极（11），其中具有与第一电极（9）不同的极性; 第一电极（9）布置在台面柱上; 第二电极（10）布置在与第一电极（9）相同的基板（1）的一个表面上; 第三电极（11）布置在与第一电极和第二电极（9,10）相反的基板（1）的另一个表面上，并且被设置为表面发射激光元件（15）的公共电极， ; 并且使用第一电极（9）和第二电极（10）向有源层（4）施加电流。

3. 发明授权

US5991473A Waveguide type semiconductor photodetector 失效
标题翻译：波导型半导体光电探测器
公开(公告)号：US5991473A
公开(公告)日：1999-11-23
申请号：US890119
申请日：1997-07-09
申请人： Kazuaki Nishikata , Michinori Irikawa
发明人： Kazuaki Nishikata , Michinori Irikawa
IPC分类号： G02B6/12 , H01L31/0232 , G02B6/10
CPC分类号： H01L31/0232 , G02B2006/12123 , G02B2006/12126
摘要： A waveguide type semiconductor photodetector comprises a n-InP substrate, and a laminate including a first and second optical confinement layers and an undoped optical absorption layer interposed therebetween. The optical absorption layer has a thickness between 0.2 and 0.5 .mu.m, and a bandgap wavelength smaller than the bandgap wavelength of the first and second optical confinement layers. The photodetector has a large mode field diameter and a small coupling loss between the same and a glass fiber.
摘要翻译：波导型半导体光电检测器包括n-InP衬底和包括第一和第二光限制层和介于其间的未掺杂光吸收层的层压体。光吸收层的厚度为0.2〜0.5μm，带隙波长小于第一和第二光限制层的带隙波长。光电检测器具有大的模场直径和相同的玻璃纤维之间的小的耦合损耗。

4. 发明授权

US5920079A Semiconductive light-emitting device having strained MQW with AlGaInAs barriers 失效
标题翻译：具有应变的具有AlGaInAs屏障的MQW的半导体发光器件
公开(公告)号：US5920079A
公开(公告)日：1999-07-06
申请号：US572101
申请日：1995-12-14
申请人： Hitoshi Shimizu , Kazuaki Nishikata , Toru Fukushima , Michinori Irikawa
发明人： Hitoshi Shimizu , Kazuaki Nishikata , Toru Fukushima , Michinori Irikawa
IPC分类号： H01L33/06 , H01L33/14 , H01L33/30 , H01S5/00 , H01S5/34 , H01S5/343 , H01L29/06 , H01L31/0328 , H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01S5/34 , H01S5/34313 , H01S5/3403 , H01S5/3406 , H01S5/3407 , H01S5/34306
摘要： The present invention provides a semiconductive light-emitting device involving a light-emitting layer of the multilayer strained quantum well structure that has a plurality of quantum well layers and a plurality of barrier layers, where each of said quantum well layers is constituted of a semiconductive crystal subjected to intraplanar compressive strain; each of the barrier layers is constituted of semiconductor crystal of AlInAs, AlGaInAs or AlGaInAsP. For high differential gain, each quantum well layer is 6nm thick or less, and the summed quantum well layers measure 13 to 1000 nm in thickness. Likewise, the invented scheme produces a light-emitting device involving a light-emitting layer of the multilayer strain compensation quantum well structure that has a plurality of quantum well layers and a plurality of barrier layers, where each of said quantum well layers is constituted of a semiconductive crystal subjected to intraplanar compressive strain; each of the barrier layers is constituted of semiconductor crystal of AlInAs, AlGaInAs or AlGaInAsP. For high differential gain, each quantum well layer is 6nm thick or less, and the summed quantum well layers measure 13 to 1000 nm in thickness.
摘要翻译：本发明提供一种半导体发光装置，其包括具有多个量子阱层和多个阻挡层的多层应变量子阱结构的发光层，其中每个所述量子阱层由半导体晶体受到内面压缩应变; 每个阻挡层由AlInAs，AlGaInAs或AlGaInAsP的半导体晶体构成。对于高差分增益，每个量子阱层的厚度为6nm或以下，相加的量子阱层厚度为13〜1000nm。同样地，本发明的方案产生了包括多层应变补偿量子阱结构的发光层的发光器件，其具有多个量子阱层和多个势垒层，其中每个所述量子阱层由受到内面压缩应变的半导体晶体; 每个阻挡层由AlInAs，AlGaInAs或AlGaInAsP的半导体晶体构成。对于高差分增益，每个量子阱层的厚度为6nm或以下，相加的量子阱层厚度为13〜1000nm。

5. 发明授权

US5608230A Strained superlattice semiconductor photodetector having a side contact structure 失效
标题翻译：具有侧接触结构的应变超晶格半导体光电探测器
公开(公告)号：US5608230A
公开(公告)日：1997-03-04
申请号：US290918
申请日：1994-11-18
申请人： Yoshiyuki Hirayama , Kazuaki Nishikata , Michinori Irikawa
发明人： Yoshiyuki Hirayama , Kazuaki Nishikata , Michinori Irikawa
IPC分类号： H01L31/0352 , H01L31/108 , H01L29/06 , H01L31/0328 , H01L31/0336
CPC分类号： B82Y20/00 , H01L31/035236 , H01L31/108 , H01L31/1085
摘要： There is provided an MSM type semiconductor photodetector having a strained superlattice structure that shows a high responsiveness and, at the same time, a reduced dark current. Such a strained superlattice semiconductor photodetector comprising semiconductor layers including a photodetective layer having an intra-planar compressive strain type strained superlattice layer formed on a semiconductor substrate by epitaxial growth is characterized in that the epitaxially grown layers are partly removed from the side walls of the semiconductor layers to produce cut-out sections (grooves 8a, 8b) and arranging electrodes in said cut-out sections respectively. Consequently, the fast responsiveness of the semiconductor photodetector is remarkably improved and the dark current of the device is greatly reduced.
摘要翻译： PCT No.PCT / JP93 / 01848 Sec。 371日期：1994年11月18日 102（e）1994年11月18日日期PCT 1993年12月21日PCT公布。公开号WO94 / 15367 日期1994年7月7日提供了具有应变超晶格结构的MSM型半导体光电检测器，其显示出高响应性，同时具有降低的暗电流。这种包含半导体层的超晶格半导体光电探测器包括通过外延生长在半导体衬底上形成的具有面内压应变型应变超晶格层的光电探测层，其特征在于外延生长层从半导体的侧壁部分去除层以产生切口部分（凹槽8a，8b）并且分别在所述切口部分中布置电极。因此，半导体光电检测器的快速响应性显着提高，并且器件的暗电流大大降低。

6. 发明授权

US07061954B2 Semiconductor optical waveguide structure 失效
标题翻译：半导体光波导结构
公开(公告)号：US07061954B2
公开(公告)日：2006-06-13
申请号：US09888930
申请日：2001-06-25
申请人： Norihiro Iwai , Kazuaki Nishikata , Akihiko Kasukawa
发明人： Norihiro Iwai , Kazuaki Nishikata , Akihiko Kasukawa
IPC分类号： H01S5/026
CPC分类号： G02B6/1228 , G02B6/131 , G02B6/305 , G02B2006/12195
摘要： A method for manufacturing a semiconductor optical waveguide comprises the steps of forming a core layer having an Al content which monotonically increases from the central part thereof to the film surface, and selectively oxidizing the core layer to obtain a peripheral, oxidized region and a central, non-oxidized region acting as a waveguide. The waveguide is tapered to have a circular mode field at the distal end thereof for efficiently coupling with an optical fiber.
摘要翻译：一种制造半导体光波导的方法包括以下步骤：形成具有从中心部分到膜表面单调增加的Al含量的芯层，并且选择性地氧化芯层以获得周边，氧化区域和中心，作为波导的非氧化区域。波导在其远端处具有圆形模场，以有效地与光纤耦合。

7. 发明授权

US06281523B1 Semiconductor optical waveguide 失效
标题翻译：半导体光波导
公开(公告)号：US06281523B1
公开(公告)日：2001-08-28
申请号：US08961851
申请日：1997-10-31
申请人： Norihiro Iwai , Kazuaki Nishikata , Akihiko Kasukawa
发明人： Norihiro Iwai , Kazuaki Nishikata , Akihiko Kasukawa
IPC分类号： H01L2701
CPC分类号： G02B6/1228 , G02B6/131 , G02B6/305 , G02B2006/12195
摘要： A method for manufacturing a semiconductor optical waveguide comprises the steps of forming a core layer having an Al content which monotonically increases from the central part thereof to the film surface, and selectively oxidizing the core layer to obtain a peripheral, oxidized region and a central, non-oxidized region acting as a waveguide. The waveguide is tapered to have a circular mode field at the distal end thereof for efficiently coupling with an optical fiber.
摘要翻译：一种制造半导体光波导的方法包括以下步骤：形成具有从中心部分到膜表面单调增加的Al含量的芯层，并且选择性地氧化芯层以获得周边，氧化区域和中心，作为波导的非氧化区域。波导在其远端处具有圆形模场，以有效地与光纤耦合。

8. 发明授权

US5926585A Waveguide type light receiving element 失效
标题翻译：波导型光接收元件
公开(公告)号：US5926585A
公开(公告)日：1999-07-20
申请号：US849189
申请日：1997-07-18
申请人： Michinori Irikawa , Kazuaki Nishikata , Takehiko Nomura
发明人： Michinori Irikawa , Kazuaki Nishikata , Takehiko Nomura
IPC分类号： H01L31/10 , G02F1/017 , H01L31/0232 , H01L31/109 , G02B6/12
CPC分类号： H01L31/109 , B82Y20/00 , H01L31/0232 , G02F1/01708 , G02F2001/01766
摘要： A waveguide type light receiving element (10) comprises a photodetector section (14), a photo-attenuator section (18), and an electrical isolation section (20) having a light transmission property which electrically isolates the photodetector section from the photo-attenuator section for allowing light transmission. The photodetector section comprises n-type light guide layer (28) and i-type light absorption layer (30) formed on a substrate (22), and a pair of n- and p-type light confinement layers (26 and 32) which sandwich the light guide layer and the light absorption layer therebetween, thereby forming a double hetero junction structure. The photo-attenuator section has a layer structure similar to the photodetector section except for a strained MQW layer disposed instead of the light absorption layer and has an absorption controlling electrode (16) and an electrode (40) disposed on the top and bottom, respectively, of the substrate. The light absorption layer and the waveguide of the photodetector section and the photo-attenuator section form a ridge structure to have a light confinement structure in a horizontal direction as well as a light confinement structure in a vertical direction. By applying a reverse bias voltage between the electrodes of the photo-attenuator section, the amount of absorption of the incident light by the photo-attenuator section can be controlled, thereby controlling the intensity of light propagated to the photodetector section.
摘要翻译： PCT No.PCT / JP96 / 02425 Sec。 371日期1997年7月18日 102（e）1997年7月18日PCT PCT 1996年8月29日PCT公布。公开号WO97 / 08757 日期1997年3月6日一种波导型光接收元件（10）包括光电检测器部分（14），光衰减器部分（18）和具有光透射特性的电隔离部分（20），其将光电检测器部分来自用于允许光透射的光衰减器部分。光电检测器部分包括形成在基板（22）上的n型光导层（28）和i型光吸收层（30），以及一对n型和p型光限制层（26和32），其中将导光层和光吸收层夹在其间，由此形成双异质结结构。光衰减器部分具有类似于光检测器部分的层结构，除了代替光吸收层设置的应变MQW层，并且分别具有设置在顶部和底部的吸收控制电极（16）和电极（40）的底物。光检测器部分和光衰减器部分的光吸收层和波导形成了在垂直方向上具有在水平方向上的光限制结构和光限制结构的脊结构。通过在光衰减器部分的电极之间施加反向偏置电压，可以控制光衰减器部分的入射光的吸收量，从而控制传播到光电检测器部分的光的强度。

9. 发明授权

US5789765A Photo diode providing high-linearity signal current in response to light receiving signal 失效
标题翻译：光电二极管响应于光接收信号提供高线性度的信号电流
公开(公告)号：US5789765A
公开(公告)日：1998-08-04
申请号：US763217
申请日：1996-12-10
申请人： Kazuaki Nishikata , Michinori Irikawa
发明人： Kazuaki Nishikata , Michinori Irikawa
IPC分类号： H01L31/105 , H01L27/15 , H01L31/12 , H01L31/153 , H01L33/00
CPC分类号： H01L31/105
摘要： A photo diode in which an optical absorption layer and a p-type semiconductor layer neighboring on each other are designed to be at almost the same valence band level (their offset not exceeding 0.05 eV). Preferably the optical absorption layer is a GaInAsP layer with an absorption edge wavelength of 1.65 to 1.55 .mu.m, and the p-type semiconductor layer and lattice-matching with the preceding semiconductor layer are each an AlGaInAs layer with an absorption edge wavelength of 1.55 to 1.30 .mu.m remaining shorter than that of the optical absorption layer.
摘要翻译：其中相邻的光吸收层和p型半导体层被设计成几乎相同的价带电平（它们的偏移不超过0.05eV）的光电二极管。优选地，光吸收层是吸收边缘波长为1.65〜1.55μm的GaInAsP层，p型半导体层和与前一半导体层的晶格匹配为AlGaInAs层，其吸收边缘波长为1.55〜比光吸收层短1.30微米。

10. 发明申请

US20100195689A1 SURFACE EMITTING LASER ELEMENT ARRAY 有权
标题翻译：表面发射激光元件阵列
公开(公告)号：US20100195689A1
公开(公告)日：2010-08-05
申请号：US12224719
申请日：2006-09-01
申请人： Maiko Ariga , Takeo Kageyama , Norihiro Iwai , Kazuaki Nishikata
发明人： Maiko Ariga , Takeo Kageyama , Norihiro Iwai , Kazuaki Nishikata
IPC分类号： H01S5/42 , H01S5/323 , H01S5/187
CPC分类号： H01S5/423 , H01L2224/48091 , H01L2224/49175 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/06226 , H01S5/18313 , H01S5/18341 , H01S2301/176 , H01S2301/18 , H01L2924/00014
摘要： A surface emitting laser element array comprises a plurality of surface emitting laser elements (15) on a same substrate (1) each comprising a mesa post formed of a laminated structure including an active layer (4) for reducing a crosstalk between the surface emitting laser elements constituting the surface emitting laser element array, and for improving a high speed response, wherein each of the surface emitting laser elements (15) comprises a first electrode (9), a second electrode (10) and a third electrode (11) that have a polarity different from that of the first electrode (9); the first electrode (9) is arranged on the mesa post; the second electrode (10) is arranged on one surface of the substrate (1) same as that of the first electrode (9); the third electrode (11) is arranged on the other surface of the substrate (1) opposite to that of the first electrode and the second electrode (9, 10) and is provided as a common electrode of the surface emitting laser elements (15); and an electric current is applied to the active layer (4) using the first electrode (9) and the second electrode (10).
摘要翻译：表面发射激光元件阵列包括在同一衬底（1）上的多个表面发射激光器元件（15），每个表面发射激光器元件（15）包括由包括有源层（4）形成的层叠结构形成的台面柱，用于减少表面发射激光器构成表面发射激光元件阵列的元件，并且用于改善高速响应，其中每个表面发射激光器元件（15）包括第一电极（9），第二电极（10）和第三电极（11），其中具有与第一电极（9）不同的极性; 第一电极（9）布置在台面柱上; 第二电极（10）布置在与第一电极（9）相同的基板（1）的一个表面上; 第三电极（11）布置在与第一电极和第二电极（9,10）相反的基板（1）的另一个表面上，并且被设置为表面发射激光元件（15）的公共电极， ; 并且使用第一电极（9）和第二电极（10）向有源层（4）施加电流。

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