专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08149891B2 Semiconductor device and optical module 有权
标题翻译：半导体器件和光模块
公开(公告)号：US08149891B2
公开(公告)日：2012-04-03
申请号：US12620267
申请日：2009-11-17
申请人： Masaki Funabashi
发明人： Masaki Funabashi
IPC分类号： H01S5/00
CPC分类号： H01S5/50 , G02B6/42 , G02B2006/12119 , G02B2006/12152 , H01S5/0202 , H01S5/10 , H01S5/101 , H01S5/1014 , H01S5/1085 , H01S5/227 , H01S5/4031 , H01S2301/176
摘要： A semiconductor laser element 10 according to the present invention comprises a waveguide 12 of a high mesa type. And then such the waveguide 12 comprises an oblique end face 17 as an emitting facet that is different from a cleaved end face 16. And hence it becomes possible to reduce a reflection factor at the end face by making of such the oblique end face 17, and it becomes possible to design a direction of an emitting beam 21, that is to be emitting from the oblique end face 17, to be independent of that for the cleaved end face 16 as well. Moreover, the emitting beam 21 is designed to be emitting as vertical to the cleaved end face 16. And then therefore in a case where an emitting beam from a semiconductor optical device is designed to be coupled with such as an optical fiber or another waveguide or the like, it is not necessary to device such as that the semiconductor laser element 10 is required to be arranged at a sub mount by being inclined to be oblique or the like.
摘要翻译：根据本发明的半导体激光元件10包括高台面型的波导管12。然后，这样的波导12包括作为与切割端面16不同的发光面的倾斜端面17.因此，可以通过制造这样的倾斜端面17来降低端面处的反射系数，并且可以将从倾斜端面17发射的发射光束21的方向设计成与切割端面16的方向无关。此外，发射光束21被设计成垂直于切割的端面16发射。因此，在来自半导体光学器件的发射光束被设计为与诸如光纤或另一个波导耦合的情况下，不需要将半导体激光元件10通过倾斜倾斜等设置在副安装台上的装置。

2. 发明授权

US07453100B2 DFB laser assembly and laser module 有权
标题翻译： DFB激光组件和激光模块
公开(公告)号：US07453100B2
公开(公告)日：2008-11-18
申请号：US10228136
申请日：2002-08-27
申请人： Masaki Funabashi , Ryosuke Yatsu , Akihiko Kasukawa
发明人： Masaki Funabashi , Ryosuke Yatsu , Akihiko Kasukawa
IPC分类号： H01L33/00
CPC分类号： H01S5/12 , H01S5/0224 , H01S5/02284 , H01S5/02415 , H01S5/068 , H01S5/2275
摘要： A DFB laser assembly including both a DFB laser device, with a buried heterostructure having a cavity length of 400 μm, a differential resistance of 4Ω, an emission wavelength of 1550 nm, and a thermal resistance of 50K/watt or less, and a heat sink mounting the DFB laser device in a junction-down structure so that the DFB laser device has a wavelength/current coefficient at 5 picometers/milli-ampere or less.
摘要翻译： DFB激光器组件包括DFB激光器件，具有400μm的腔长度的掩埋异质结构，40mega的差分电阻，1550nm的发射波长和50K /瓦或更低的热阻，以及热将DFB激光器件沉入安装在结合下降结构中，使得DFB激光器件的波长/电流系数为5皮米/毫安或更小。

3. 发明授权

US06947463B2 Semiconductor laser device for use in a laser module 有权
标题翻译：用于激光模块的半导体激光器件
公开(公告)号：US06947463B2
公开(公告)日：2005-09-20
申请号：US09832885
申请日：2001-04-12
申请人： Naoki Tsukiji , Junji Yoshida , Masaki Funabashi
发明人： Naoki Tsukiji , Junji Yoshida , Masaki Funabashi
IPC分类号： H01S3/094 , H01S3/30 , H01S5/024 , H01S5/12 , H01S5/227 , H01S5/10
CPC分类号： H01S5/227 , H01S3/094003 , H01S3/302 , H01S5/02415 , H01S5/02438 , H01S5/0287 , H01S5/1212 , H01S5/1215 , H01S5/1225
摘要： A semiconductor laser device, module, and method for providing light suitable for providing an excitation light source for a Raman amplifier. The semiconductor laser device includes an active layer configured to radiate light, a spacer layer in contact with the active layer and a diffraction grating formed within the spacer layer, and configured to emit a light beam having a plurality of longitudinal modes within a predetermined spectral width of an oscillation wavelength spectrum of the semiconductor device. A plurality of longitudinal modes within a predetermined spectral width of an oscillation wavelength spectrum is provided by changing a wavelength interval between the longitudinal modes and/or widening the predetermined spectral width of the oscillation wavelength spectrum. The wavelength interval is set by the length of a resonator cavity within the semiconductor laser device, while the predetermined spectral width of the oscillation wavelength spectrum is set by either shortening the diffraction grating or varying a pitch of the grating elements within the diffraction grating.
摘要翻译：一种用于提供适合于为拉曼放大器提供激发光源的光的半导体激光器件，模块和方法。半导体激光器件包括被配置为辐射光的有源层，与有源层接触的间隔层和形成在间隔层内的衍射光栅，并且被配置为发射具有预定光谱宽度内的多个纵向模的光束的半导体器件的振荡波长谱。通过改变纵向模式之间的波长间隔和/或加宽振荡波长光谱的预定光谱宽度来提供振荡波长谱的预定光谱宽度内的多个纵向模式。波长间隔由半导体激光器件内的谐振器腔的长度设定，而通过缩短衍射光栅或改变衍射光栅内的光栅元件的间距来设定振荡波长光谱的预定光谱宽度。

4. 发明授权

US06782022B2 Semiconductor laser device having improved output power characteristics 有权
标题翻译：具有改善的输出功率特性的半导体激光器件
公开(公告)号：US06782022B2
公开(公告)日：2004-08-24
申请号：US10189481
申请日：2002-07-08
申请人： Masaki Funabashi , Ryosuke Yatsu , Akihiko Kasukawa
发明人： Masaki Funabashi , Ryosuke Yatsu , Akihiko Kasukawa
IPC分类号： H01S500
CPC分类号： H01S5/12
摘要： A semiconductor laser includes a resonant cavity with a cavity length, an active layer structure provided within the resonant cavity and configured to radiate light in an optical gain distribution having a peak wavelength, an embedding layer provided within the resonant cavity and having a refractive index, and a diffraction grating embedded within the embedding layer and having a bandgap wavelength and a refractive index, the diffraction grating configured to select an emission wavelength of the resonant cavity independently of the peak wavelength in the optical gain distribution of the active layer structure. The embedding layer and diffraction grating are configured to provide operational characteristics satisfying the relationship 0
摘要翻译：半导体激光器包括具有空腔长度的谐振腔，设置在谐振腔内的有源层结构，并且被配置为辐射具有峰值波长的光学增益分布中的光，设置在谐振腔内并具有折射率的嵌入层，以及嵌入在所述嵌入层内并具有带隙波长和折射率的衍射光栅，所述衍射光栅被配置为在所述有源层结构的光学增益分布中独立于所述峰值波长选择所述谐振腔的发射波长。嵌入层和衍射光栅被配置为提供满足关系0

5. 发明授权

US06661828B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US06661828B2
公开(公告)日：2003-12-09
申请号：US09793881
申请日：2001-02-28
申请人： Masaki Funabashi , Ryosuke Yatsu , Akihiko Kasukawa
发明人： Masaki Funabashi , Ryosuke Yatsu , Akihiko Kasukawa
IPC分类号： H01S308
CPC分类号： H01S5/12 , H01S5/2275
摘要： A DFB Laser of buried hetero type with a lasing wavelength of 1550 nm, having on an InP substrate a laminated structure of an InP buffer layer, an active layer, a 200-nm-thickness InP spacer layer, a 240-nm-period diffraction grating made of a 20-nm-thickness GaInAsP layer, and an InP first cladding layer in which diffraction grating is buried. The peak wavelength &lgr;max of the optical gain distribution of the active layer is approximately 1530 nm. The bandgap wavelength of the diffraction grating is approximately 1510 nm. The laminated structure is etched into mesa stripes, on both sides of which are formed p/n-separated current blocking regions. Since the diffraction grating is formed of GaInAsP having &lgr;g of approximately 1510 nm, little absorption occurs at wavelengths around the lasing wavelength 1550 nm. The absorption is coefficient with respect to the peak wavelength of the optical gain distribution of the active layer is greater than the absorption coefficient with respect to the lasing wavelength.
摘要翻译：具有1550nm的激光波长的埋入异型的DFB激光器，在InP衬底上具有InP缓冲层，有源层，200nm厚的InP间隔层，240nm周期衍射由20nm厚度的GaInAsP层制成的光栅以及掩埋衍射光栅的InP第一包层。有源层的光学增益分布的峰值波长lambdamax约为1530nm。衍射光栅的带隙波长约为1510nm。层压结构被蚀刻成台面条纹，其两侧形成p / n分离的电流阻挡区域。由于衍射光栅由具有大约1510nm的兰德的GaInAsP形成，所以在激光波长1550nm附近的波长处几乎不发生吸收。吸收是相对于有源层的光学增益分布的峰值波长的系数大于相对于激光波长的吸收系数。

6. 发明授权

US06493369B2 Gain-coupling distributed feedback type semiconductor laser device 失效
标题翻译：增益耦合分布式反馈型半导体激光器件
公开(公告)号：US06493369B2
公开(公告)日：2002-12-10
申请号：US09865444
申请日：2001-05-29
申请人： Masaki Funabashi , Akihiko Kasukawa
发明人： Masaki Funabashi , Akihiko Kasukawa
IPC分类号： H01S500
CPC分类号： H01S5/1228 , H01S5/0287
摘要： A gain-coupling distributed feedback type semiconductor laser device realizing a high light output power without causing an increase in the threshold current or a reduction in the emission efficiency, specifically a gain-coupling distributed feedback type semiconductor laser device comprised of a diffraction grating at least at part of the inside of a cavity and having a gain or loss periodically changing, a reflectance of one end surface (front facet) of the cavity being not more than 3% and the reflectance of the other end surface (rear facet) being larger than the reflectance of that one end surface and not more than 60%, such a gain-coupling distributed feedback type semiconductor laser device wherein the length of said cavity is at least 400 &mgr;m, and in particular such a gain-coupling distributed feedback type semiconductor laser device of an absorbing diffraction grating type.
摘要翻译：一种增益耦合分布式反馈型半导体激光器件，其实现高的光输出功率，而不会引起阈值电流的增加或发射效率的降低，具体地说，一种增益耦合分布反馈型半导体激光器件，其包括衍射光栅至少在空腔的内部的一部分并且具有周期性变化的增益或损耗的情况下，空腔的一个端面（前端面）的反射率不大于3％，另一端面（后方面）的反射率较大比所述一个端面的反射率和不大于60％的增益耦合分布反馈型半导体激光器件，其中所述腔的长度至少为400μm，特别是这样的增益耦合分布反馈型半导体吸收衍射光栅类型的激光装置。

7. 发明申请

US20110243494A1 SEMICONDUCTOR OPTICAL AMPLIFIER MODULE 有权
标题翻译：半导体光放大器模块
公开(公告)号：US20110243494A1
公开(公告)日：2011-10-06
申请号：US13019538
申请日：2011-02-02
申请人： Hideaki HASEGAWA , Masaki Funabashi
发明人： Hideaki HASEGAWA , Masaki Funabashi
IPC分类号： G02B6/12
CPC分类号： G02B6/122 , B82Y20/00 , G02B6/136 , G02B6/30 , G02B6/3648 , H01S5/02252 , H01S5/02284 , H01S5/026 , H01S5/0262 , H01S5/101 , H01S5/1014 , H01S5/2222 , H01S5/2275 , H01S5/34306 , H01S5/50
摘要： Included are a semiconductor device unit in which a semiconductor optical amplifier and a first semiconductor photo detector being configured to monitor a part of an input light input to the semiconductor optical amplifier or a part of an output light output from the semiconductor optical amplifier are integrated on a mutually same substrate, and a passive waveguide unit connected to the semiconductor device unit and in which a first passive waveguide being configured to cause the input light to be input to the semiconductor optical amplifier or to cause the output light to be output from the semiconductor optical amplifier and a second passive waveguide branching from the first passive waveguide and being configured to cause a part of the input light or a part of the output light to be input to the first semiconductor photo detector are provided on a mutually same substrate.
摘要翻译：包括半导体器件单元，其中半导体光放大器和第一半导体光电检测器被配置为监测输入到半导体光放大器的输入光的一部分或者从半导体光放大器输出的输出光的一部分被集成在相互相同的衬底，以及连接到半导体器件单元的无源波导单元，其中第一无源波导被配置为使输入光输入到半导体光放大器或使输出光从半导体输出光放大器和从第一无源波导分支并被配置为使输入光的一部分或输出光的一部分输入到第一半导体光电检测器的第二无源波导被提供在相同的基板上。

8. 发明授权

US07180930B2 DFB semiconductor laser device having ununiform arrangement of a diffraction grating 有权
$DFB semiconductor laser device having ununiform arrangement of a diffraction grating$
标题翻译： DFB半导体激光器件具有不均匀排列的衍射光栅
公开(公告)号：US07180930B2
公开(公告)日：2007-02-20
申请号：US10465655
申请日：2003-06-20
申请人： Keishi Takaki , Tomofumi Kise , Masaki Funabashi
发明人： Keishi Takaki , Tomofumi Kise , Masaki Funabashi
IPC分类号： H01S3/08
CPC分类号： H01S5/12 , H01S5/028 , H01S5/0654 , H01S5/1203 , H01S5/1215 , H01S5/1218 , H01S5/1221 , H01S5/1225
摘要： A DFB semiconductor laser device includes a diffraction grating extending parallel to a laser cavity. The diffraction grating has ununiform structure wherein some of the corrugation patterns of diffraction grating are omitted periodically, the diffraction grating has different duty ratio between the area near the front facet of the laser cavity and the area near the rear facet, or the length of the diffraction grating is smaller than the cavity length and the width of the diffraction grating reduces in the vicinity of the rear end of the diffraction grating down to zero at the rear end.
摘要翻译： DFB半导体激光器件包括平行于激光腔延伸的衍射光栅。衍射光栅具有不均匀的结构，其中衍射光栅的一些波纹图案周期性地被省略，衍射光栅在激光腔前面附近的区域和后面附近的区域之间具有不同的占空比，衍射光栅小于空腔长度，衍射光栅的宽度在衍射光栅的后端附近在后端减小到零。

9. 发明授权

US06829277B2 Distributed feedback semiconductor laser device and laser module 有权
标题翻译：分布式反馈半导体激光器件和激光器模块
公开(公告)号：US06829277B2
公开(公告)日：2004-12-07
申请号：US10195104
申请日：2002-07-15
申请人： Ryosuke Yatsu , Masaki Funabashi , Akihiko Kasukawa
发明人： Ryosuke Yatsu , Masaki Funabashi , Akihiko Kasukawa
IPC分类号： H01S500
CPC分类号： H01S5/1228 , H01S5/0287
摘要： Disclosed is a distributed feedback semiconductor laser device having a resonator for oscillating a laser beam and a laser module which is provided with the semiconductor laser device. The semiconductor laser device comprises a diffraction grating, formed inside the resonator, for periodically changing only an extinction coefficient k or both a real refractive index n and the extinction coefficient k in a complex refractive index N expressed by N=n−ik where i is an imaginary unit. The resonator has a first facet having a first reflectance and a second facet opposite to the first facet and having a second reflectance. The first reflectance is smaller than the second reflectance and equal to or larger than 10%, preferably equal to or smaller than 20%.
摘要翻译：公开了一种具有用于振荡激光束的谐振器的分布式反馈半导体激光器件和设置有半导体激光器件的激光器模块。半导体激光器件包括形成在谐振器内部的衍射光栅，用于周期性地仅改变由N = n-ik表示的复折射率N中的实际折射率n和实际折射率n以及消光系数k，其中i是一个虚构的单位。谐振器具有具有第一反射率的第一刻面和与第一小面相反并且具有第二反射率的第二小面。第一反射率小于第二反射率，等于或大于10％，优选等于或小于20％。

10. 发明授权

US06765935B2 Semiconductor laser module, manufacturing method thereof and optical amplifier 有权
标题翻译：半导体激光器模块及其制造方法和光放大器
公开(公告)号：US06765935B2
公开(公告)日：2004-07-20
申请号：US10015654
申请日：2001-12-17
申请人： Toshio Kimura , Masashi Nakae , Takeo Shimizu , Naoki Tsukiji , Junji Yoshida , Masaki Funabashi , Takeshi Aikiyo , Toshiro Yamamoto , Tomoaki Toratani , Hiroshi Matsuura , Mieko Konishi
发明人： Toshio Kimura , Masashi Nakae , Takeo Shimizu , Naoki Tsukiji , Junji Yoshida , Masaki Funabashi , Takeshi Aikiyo , Toshiro Yamamoto , Tomoaki Toratani , Hiroshi Matsuura , Mieko Konishi
IPC分类号： A01S313
CPC分类号： H01S5/02248 , G02B6/4206 , G02B6/4218 , H01S3/094003 , H01S3/094073 , H01S3/094096 , H01S3/09415 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/1203 , H01S5/1212 , H01S5/1215 , H01S5/146 , H01S5/4012 , H01S5/4062 , H01S5/4068 , H01S5/4087
摘要： A semiconductor laser module includes a single semiconductor laser device having a first light emitting stripe and at least one other light emitting stripe which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface. It also includes a first lens positioned so that the first laser beam and the at least one other laser beam emitted from the semiconductor laser device are incident thereon, the first lens configured to separate the first laser beam and the at least one other laser beam. A beam synthesizing member is included and has a first input part on which the first laser beam is incident, at least one other input part on which the at least one other laser beam is incident, and an output part from which the first laser beam emerging from the first input part and the at least one other laser beam emerging from the at least one other input part are multiplexed and emitted as a multiplexed laser beam. An optical fiber is positioned to receive the multiplexed laser beam therein.
摘要翻译：半导体激光器模块包括具有第一发光条纹和至少一个其它发光条纹的单个半导体激光器装置，其被对准以分别发射第一激光束和至少一个其它激光束通过一个边缘表面。它还包括第一透镜，其定位成使得第一激光束和从半导体激光器件发射的至少一个其它激光束入射到其上，第一透镜被配置为分离第一激光束和至少一个其它激光束。包括光束合成部件，并且具有第一激光束入射的第一输入部，入射有至少一个其他激光束的至少一个其他输入部，以及第一激光束从其出射的输出部从所述第一输入部分和从所述至少一个其他输入部分出射的所述至少一个其它激光束被多路复用并作为多路复用激光束发射。光纤被定位成在其中接收复用的激光束。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式