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1. 发明申请

US20090180509A1 Surface emitting semiconductor laser and method of manufacturing the same 审中-公开
标题翻译：表面发射半导体激光器及其制造方法
公开(公告)号：US20090180509A1
公开(公告)日：2009-07-16
申请号：US12318780
申请日：2009-01-08
申请人： Tomofumi Kise , Noriyuki Yokouchi
发明人： Tomofumi Kise , Noriyuki Yokouchi
IPC分类号： H01S5/18 , H01L21/02
CPC分类号： H01S5/18327 , H01S5/0208 , H01S5/0422 , H01S5/105 , H01S5/18308 , H01S5/18319 , H01S5/18341 , H01S5/18369 , H01S2301/166
摘要： A surface emitting semiconductor laser comprises a semiconductor substrate; a lamination structure including a lower multilayer film reflecting mirror, an active layer, and an upper multilayer film reflecting mirror formed on the semiconductor substrate; and an upper electrode and a lower electrode for supplying an electric power to the active layer. The upper multilayer film reflecting mirror has a refractive index having a two-dimensional periodic distribution within a lamination plane except a predetermined region in the lamination plane. A circular hole layer is formed above the active layer, and includes a plurality of circular holes arranged in a peripheral region surrounding the predetermined region in a two-dimensional periodic pattern, so that a multilayer film formed on the circular hole layer including an inside of the circular holes to constitute the upper multilayer film reflecting mirror forms the two-dimensional periodic distribution of the refractive index together with the circular hole layer.
摘要翻译：表面发射半导体激光器包括半导体衬底; 包括形成在半导体衬底上的下多层膜反射镜，有源层和上多层膜反射镜的层压结构; 以及用于向有源层提供电力的上电极和下电极。上层多层膜反射镜的折射率在层叠平面内的除了规定区域以外的层叠面内具有二维周期性分布。在活性层的上方形成有圆形的空穴层，并且在二维周期性图案中包含配置在围绕规定区域的周边区域的多个圆形孔，使得在圆形孔层上形成的多层膜包括：构成上部多层膜反射镜的圆形孔与圆形孔层一起形成折射率的二维周期性分布。

2. 发明授权

US07885312B2 Surface emitting semiconductor laser element 失效
标题翻译：表面发射半导体激光元件
公开(公告)号：US07885312B2
公开(公告)日：2011-02-08
申请号：US12219997
申请日：2008-07-31
申请人： Tomofumi Kise , Noriyuki Yokouchi
发明人： Tomofumi Kise , Noriyuki Yokouchi
IPC分类号： H01S3/08
CPC分类号： H01S5/18305 , B82Y20/00 , H01S5/0425 , H01S5/105 , H01S5/18319 , H01S5/18377 , H01S5/34306 , H01S2301/166 , H01S2302/00
摘要： A surface emitting laser is provided with an upper reflecting mirror having a photonic crystal structure with a point defect at the center, and emits a laser beam from the side of a lower reflecting mirror. An upper electrode is formed on the point defect at the center, and element resistance is reduced. A material transparent to a wavelength of the laser beam is used for a substrate. The emission efficiency is improved by reducing the element resistance of the photonic crystal surface emitting laser.
摘要翻译：表面发射激光器设置有具有在中心具有点缺陷的光子晶体结构的上反射镜，并且从下反射镜侧发射激光束。在中心的点缺陷处形成上电极，并且元件电阻降低。将对激光束的波长透明的材料用于基板。通过降低光子晶体表面发射激光器的元件电阻来提高发射效率。

3. 发明授权

US07525726B2 Photonic crystal semiconductor device and production method thereof 失效
标题翻译：光子晶体半导体器件及其制造方法
公开(公告)号：US07525726B2
公开(公告)日：2009-04-28
申请号：US11505428
申请日：2006-08-17
申请人： Tomofumi Kise , Tatsuya Kimoto , Noriyuki Yokouchi , Toshihiko Baba
发明人： Tomofumi Kise , Tatsuya Kimoto , Noriyuki Yokouchi , Toshihiko Baba
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , G02B6/1225 , G02F1/01708 , G02F1/025 , G02F2201/346 , G02F2202/32 , G02F2203/055 , H01S5/0265 , H01S5/105 , H01S5/12 , H01S5/18311 , H01S5/18319 , H01S5/18369 , H01S5/2027
摘要： To provide a photonic crystal semiconductor device which enables various kinds of optical devices having a photonic crystal structure which is readily formed using a semiconductor and a semiconductor manufacturing process, and a manufacturing method thereof. The object can be achieved by a photonic crystal structure, including a lower DBR layer 1, a core layer 2, an upper DBR layer 3, and a dielectric multilayer film 6 which are sequentially laminated from an n-InP substrate 11 side, a plurality of holes 9 formed in the direction of a film thickness in the core layer 2 and the upper DBR layer 3, and a line defect portion 10 with none of the plurality of holes formed therein and disposed between the plurality of holes 9, wherein the line defect portion 10 serves as an optical waveguide.
摘要翻译：本发明提供一种光子晶体半导体器件及其制造方法，该光子晶体半导体器件能够实现使用半导体和半导体制造工艺容易地形成的具有光子晶体结构的各种光学器件。该目的可以通过光子晶体结构实现，其包括从n-InP衬底11侧依次层叠的下DBR层1，芯层2，上DBR层3和电介质多层膜6，多个形成在芯层2和上DBR层3中的膜厚度方向上的孔9以及在其中形成有多个孔并且设置在多个孔9之间的线缺陷部10，其中线缺陷部分10用作光波导。

4. 发明申请

US20080298420A1 Surface emitting semiconductor laser element 失效
标题翻译：表面发射半导体激光元件
公开(公告)号：US20080298420A1
公开(公告)日：2008-12-04
申请号：US12219997
申请日：2008-07-31
申请人： Tomofumi Kise , Noriyuki Yokouchi
发明人： Tomofumi Kise , Noriyuki Yokouchi
IPC分类号： H01S5/18
CPC分类号： H01S5/18305 , B82Y20/00 , H01S5/0425 , H01S5/105 , H01S5/18319 , H01S5/18377 , H01S5/34306 , H01S2301/166 , H01S2302/00
摘要： A surface emitting laser is provided with an upper reflecting mirror having a photonic crystal structure with a point defect at the center, and emits a laser beam from the side of a lower reflecting mirror. An upper electrode is formed on the point defect at the center, and element resistance is reduced. A material transparent to a wavelength of the laser beam is used for a substrate. The emission efficiency is improved by reducing the element resistance of the photonic crystal surface emitting laser.
摘要翻译：表面发射激光器设置有具有在中心具有点缺陷的光子晶体结构的上反射镜，并且从下反射镜侧发射激光束。在中心的点缺陷处形成上电极，并且元件电阻降低。将对激光束的波长透明的材料用于基板。通过降低光子晶体表面发射激光器的元件电阻来提高发射效率。

5. 发明申请

US20070013991A1 Photonic crystal semiconductor device and production method thereof 失效
标题翻译：光子晶体半导体器件及其制造方法
公开(公告)号：US20070013991A1
公开(公告)日：2007-01-18
申请号：US11505428
申请日：2006-08-17
申请人： Tomofumi Kise , Tatsuya Kimoto , Noriyuki Yokouchi , Toshihiko Baba
发明人： Tomofumi Kise , Tatsuya Kimoto , Noriyuki Yokouchi , Toshihiko Baba
IPC分类号： G02B26/00 , G02F1/03 , G02F1/00 , G02F1/07
CPC分类号： B82Y20/00 , G02B6/1225 , G02F1/01708 , G02F1/025 , G02F2201/346 , G02F2202/32 , G02F2203/055 , H01S5/0265 , H01S5/105 , H01S5/12 , H01S5/18311 , H01S5/18319 , H01S5/18369 , H01S5/2027
摘要： To provide a photonic crystal semiconductor device which enables various kinds of optical devices having a photonic crystal structure which is readily formed using a semiconductor and a semiconductor manufacturing process, and a manufacturing method thereof. The object can be achieved by a photonic crystal structure, including a lower DBR layer 1, a core layer 2, an upper DBR layer 3, and a dielectric multilayer film 6 which are sequentially laminated from an n-InP substrate 11 side, a plurality of holes 9 formed in the direction of a film thickness in the core layer 2 and the upper DBR layer 3, and a line defect portion 10 with none of the plurality of holes formed therein and disposed between the plurality of holes 9, wherein the line defect portion 10 serves as an optical waveguide.
摘要翻译：本发明提供一种光子晶体半导体器件及其制造方法，该光子晶体半导体器件能够实现使用半导体和半导体制造工艺容易地形成的具有光子晶体结构的各种光学器件。该目的可以通过光子晶体结构实现，其包括从n-InP衬底11侧依次层叠的下DBR层1，芯层2，上DBR层3和电介质多层膜6，多个形成在芯层2和上DBR层3中的膜厚度方向上的孔9以及在其中形成有多个孔并且设置在多个孔9之间的线缺陷部10，其中线缺陷部分10用作光波导。

6. 发明授权

US07003013B2 Distributed feedback semiconductor laser device 有权
标题翻译：分布式反馈半导体激光器件
公开(公告)号：US07003013B2
公开(公告)日：2006-02-21
申请号：US10310939
申请日：2002-12-06
申请人： Tomofumi Kise , Masaki Funabashi
发明人： Tomofumi Kise , Masaki Funabashi
IPC分类号： H01S3/08
CPC分类号： B82Y20/00 , H01S5/12 , H01S5/2277 , H01S5/305 , H01S5/34306
摘要： A DFB semiconductor laser device including an n-type semiconductor substrate and a layer structure, overlying the semiconductor substrate, including an active layer, a compound semiconductor layer constituting a diffraction grating and overlying the active layer, and an embedding layer embedding the diffraction grating, wherein said at least one of the compound semiconductor layer and the embedding layer has a carrier density of 7×1017 to 2×1018 cm−3.
摘要翻译：一种包括n型半导体衬底和层状结构的DFB半导体激光器件，包括有源层，构成衍射光栅并覆盖有源层的化合物半导体层和嵌入衍射光栅的嵌入层，其中所述化合物半导体层和所述嵌入层中的至少一个具有7×10 17至2×10 18 cm -3的载流子密度。

7. 发明授权

US08396336B2 Optical phase modulator and optical phase modulating device 有权
标题翻译：光相位调制器和光相位调制装置
公开(公告)号：US08396336B2
公开(公告)日：2013-03-12
申请号：US12836539
申请日：2010-07-14
申请人： Tomofumi Kise , Masaki Funabshi
发明人： Tomofumi Kise , Masaki Funabshi
IPC分类号： G02F1/01 , G02F1/035
CPC分类号： G02F1/2257 , G02F1/0121 , G02F1/2255 , G02F2001/212
摘要： An optical phase modulator includes a main Mach-Zehnder interferometer having first and second main optical waveguide path arms, whose initial phase difference in the used wavelength is π, a first sub Mach-Zehnder interferometer having first and second sub optical waveguide path arms that are formed in the first main optical waveguide path arm, whose initial phase difference in the used wavelength is 0, and a second sub Mach-Zehnder interferometer having third and fourth sub optical waveguide path arms that are formed in the second main optical waveguide path arm, and whose initial phase difference in the used wavelength is 0. Of each of the main optical waveguide path arms and the sub optical waveguide path arms, at least the portions where high-frequency electrodes are formed are constructed using semiconductor waveguide paths, and reduce the effects of frequency chirping caused by an orthogonal component due to light absorption in the semiconductor.
摘要翻译：光学相位调制器包括主马赫 - 策德尔干涉仪，其具有第一和第二主光波导路径臂，其初始相位差在使用波长为＆pgr;第一子马赫 - 曾德尔干涉仪具有第一和第二子光波导路径臂，形成在第一主光波导路径臂中，其使用波长的初始相位差为0，以及具有形成在第二主光波导路径臂中的第三和第四子光路径臂的第二子马赫 - 曾德干涉仪并且其使用波长的初始相位差为0.在主光波导路径臂和副光波导路径臂中，至少使用半导体波导路径构成高频电极的部分，并且减少由半导体中的光吸收引起的正交分量引起的频率啁啾的影响。

8. 发明授权

US07180930B2 DFB semiconductor laser device having ununiform arrangement of a diffraction grating 有权
$DFB semiconductor laser device having ununiform arrangement of a diffraction grating$
标题翻译： DFB半导体激光器件具有不均匀排列的衍射光栅
公开(公告)号：US07180930B2
公开(公告)日：2007-02-20
申请号：US10465655
申请日：2003-06-20
申请人： Keishi Takaki , Tomofumi Kise , Masaki Funabashi
发明人： Keishi Takaki , Tomofumi Kise , Masaki Funabashi
IPC分类号： H01S3/08
CPC分类号： H01S5/12 , H01S5/028 , H01S5/0654 , H01S5/1203 , H01S5/1215 , H01S5/1218 , H01S5/1221 , H01S5/1225
摘要： A DFB semiconductor laser device includes a diffraction grating extending parallel to a laser cavity. The diffraction grating has ununiform structure wherein some of the corrugation patterns of diffraction grating are omitted periodically, the diffraction grating has different duty ratio between the area near the front facet of the laser cavity and the area near the rear facet, or the length of the diffraction grating is smaller than the cavity length and the width of the diffraction grating reduces in the vicinity of the rear end of the diffraction grating down to zero at the rear end.
摘要翻译： DFB半导体激光器件包括平行于激光腔延伸的衍射光栅。衍射光栅具有不均匀的结构，其中衍射光栅的一些波纹图案周期性地被省略，衍射光栅在激光腔前面附近的区域和后面附近的区域之间具有不同的占空比，衍射光栅小于空腔长度，衍射光栅的宽度在衍射光栅的后端附近在后端减小到零。

9. 发明授权

US06743648B2 Method for fabricating a set of distributed feedback semiconductor lasers 有权
标题翻译：用于制造一组分布式反馈半导体激光器的方法
公开(公告)号：US06743648B2
公开(公告)日：2004-06-01
申请号：US10167706
申请日：2002-06-13
申请人： Tomofumi Kise , Masaki Funabashi
发明人： Tomofumi Kise , Masaki Funabashi
IPC分类号： H01L2100
CPC分类号： H01S5/227 , H01S5/0201 , H01S5/12 , H01S5/1231 , H01S5/2275
摘要： A method for forming a set of DFB lasers includes the steps of forming active layers having different peak gain wavelengths, measuring the peak gain wavelengths of the active layers, and forming diffraction gratings having periods based on the measured peak gain wavelengths, the periods allowing the detuning amount of the DFB laser device to fall within a design value.
摘要翻译：形成一组DFB激光器的方法包括以下步骤：形成具有不同峰值增益波长的有源层，测量有源层的峰值增益波长，以及形成具有基于测量的峰值增益波长的周期的衍射光栅，允许 DFB激光装置的失谐量落在设计值内。

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