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1. 发明授权

US07208066B2 Substrate processing apparatus and substrate processing method 失效
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US07208066B2
公开(公告)日：2007-04-24
申请号：US10649780
申请日：2003-08-28
申请人： Junichi Kitano , Yuji Matsuyama , Takahiro Kitano , Takayuki Katano , Hidefumi Matsui , Yo Suzuki , Masami Yamashita , Toru Aoyama , Hiroyuki Iwaki , Satoru Shimura , Masatoshi Deguchi , Kousuke Yoshihara , Naruaki Iida
发明人： Junichi Kitano , Yuji Matsuyama , Takahiro Kitano , Takayuki Katano , Hidefumi Matsui , Yo Suzuki , Masami Yamashita , Toru Aoyama , Hiroyuki Iwaki , Satoru Shimura , Masatoshi Deguchi , Kousuke Yoshihara , Naruaki Iida
IPC分类号： C23F1/00 , H01L21/306 , B05C11/00
CPC分类号： H01L21/67178 , G03F7/70991 , H01L21/67017 , H01L21/6715 , H01L21/67161 , H01L21/67184 , H01L21/67742 , H01L21/67778 , Y10T29/41
摘要： On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.
摘要翻译：在涂覆和显影处理系统中由分隔板，即盒式磁带站，加工站和界面部分划分的各个区域之上，提供用于向各个区域供应惰性气体的气体供应部分。在各个区域的底部设置用于各区域的排气的排气管。通过将不含杂质的惰性气体（例如氧气和细颗粒）从各个气体供应区域供应到各个区域中并且从排气管排出各个区域中的气氛，将各个区域中的气氛保持在清洁状态。

2. 发明申请

US20070127916A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 有权
标题翻译：基板处理装置和基板处理方法
公开(公告)号：US20070127916A1
公开(公告)日：2007-06-07
申请号：US11673257
申请日：2007-02-09
申请人： Junichi Kitano , Yuji Matsuyama , Takahiro Kitano , Takayuki Katano , Hidefumi Matsui , Yo Suzuki , Masami Yamashita , Toru Aoyama , Hiroyuki Iwaki , Satoru Shimura , Masatoshi Deguchi , Kousuke Yoshihara , Naruaki Iida
发明人： Junichi Kitano , Yuji Matsuyama , Takahiro Kitano , Takayuki Katano , Hidefumi Matsui , Yo Suzuki , Masami Yamashita , Toru Aoyama , Hiroyuki Iwaki , Satoru Shimura , Masatoshi Deguchi , Kousuke Yoshihara , Naruaki Iida
IPC分类号： G03D5/00
CPC分类号： H01L21/67178 , G03F7/70991 , H01L21/67017 , H01L21/6715 , H01L21/67161 , H01L21/67184 , H01L21/67742 , H01L21/67778 , Y10T29/41
摘要： On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.
摘要翻译：在涂覆和显影处理系统中由分隔板，即盒式磁带站，加工站和界面部分划分的各个区域之上，提供用于向各个区域供应惰性气体的气体供应部分。在各个区域的底部设置用于各区域的排气的排气管。通过将不含杂质的惰性气体（例如氧气和细颗粒）从各个气体供应区域供应到各个区域中并且从排气管排出各个区域中的气氛，将各个区域中的气氛保持在清洁状态。

3. 发明授权

US07401988B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US07401988B2
公开(公告)日：2008-07-22
申请号：US11673257
申请日：2007-02-09
申请人： Takayuki Katano , Hidefumi Matsui , Junichi Kitano , Yo Suzuki , Masami Yamashita , Toru Aoyama , Hiroyuki Iwaki , Satoru Shimura
发明人： Takayuki Katano , Hidefumi Matsui , Junichi Kitano , Yo Suzuki , Masami Yamashita , Toru Aoyama , Hiroyuki Iwaki , Satoru Shimura
IPC分类号： G03D5/00 , B05C11/00
CPC分类号： H01L21/67178 , G03F7/70991 , H01L21/67017 , H01L21/6715 , H01L21/67161 , H01L21/67184 , H01L21/67742 , H01L21/67778 , Y10T29/41
摘要： On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.
摘要翻译：在涂覆和显影处理系统中由分隔板，即盒式磁带站，加工站和界面部分划分的各个区域之上，提供用于向各个区域供应惰性气体的气体供应部分。在各个区域的底部设置用于各区域的排气的排气管。通过将不含杂质的惰性气体（例如氧气和细颗粒）从各个气体供应区域供应到各个区域中并且从排气管排出各个区域中的气氛，将各个区域中的气氛保持在清洁状态。

4. 发明授权

US06485203B2 Substrate processing method and substrate processing apparatus 失效
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US06485203B2
公开(公告)日：2002-11-26
申请号：US09737473
申请日：2000-12-18
申请人： Takayuki Katano , Hidefumi Matsui , Junichi Kitano , Yo Suzuki , Masami Yamashita , Toru Aoyama , Hiroyuki Iwaki , Satoru Shimura
发明人： Takayuki Katano , Hidefumi Matsui , Junichi Kitano , Yo Suzuki , Masami Yamashita , Toru Aoyama , Hiroyuki Iwaki , Satoru Shimura
IPC分类号： G03D500
CPC分类号： H01L21/67178 , B05C11/08 , H01L21/67248 , H01L21/67742 , H01L21/67748 , H01L21/67754
摘要： A developing unit, a coating unit and a plurality of cooling plates are arranged in a process station which performs a resist coating and so on and a wafer is transferred among them by a substrate transfer device. The temperature of an area to where the wafer is transferred is detected by a temperature/humidity detector and the temperature of the wafer which is cooled by the cooling plates is adjusted accordingly based on a detected value so that the temperature of the wafer when transferred to the coating unit becomes a coating temperature of a processing solution. Thereby, the wafer is transferred to the coating unit while maintaining its temperature with high accuracy to be coated with a resist solution, so that a formation of an uneven processing due to the temperature change can be prevented and a uniform processing can be performed.
摘要翻译：显影单元，涂布单元和多个冷却板布置在执行抗蚀剂涂层等的处理站中，并且通过基板传送装置在晶片之间转印晶片。通过温度/湿度检测器检测晶片转移到的区域的温度，并且基于检测值相应地调节由冷却板冷却的晶片的温度，使得晶片转移到涂布单元成为处理溶液的涂布温度。由此，将晶片转印到涂布单元，同时高精度地保持其温度以涂覆抗蚀剂溶液，从而可以防止由温度变化引起的不均匀处理的形成，并且可以进行均匀的处理。

5. 发明申请

US20120006362A1 SUBSTRATE CLEANING DEVICE AND SUBSTRATE CLEANING METHOD 审中-公开
标题翻译：基板清洁装置和基板清洁方法
公开(公告)号：US20120006362A1
公开(公告)日：2012-01-12
申请号：US13240830
申请日：2011-09-22
申请人： Taro Yamamoto , Hideharu Kyouda , Tetsu Kawasaki , Satoru Shimura
发明人： Taro Yamamoto , Hideharu Kyouda , Tetsu Kawasaki , Satoru Shimura
IPC分类号： B08B7/04 , B08B5/02 , B08B3/04
CPC分类号： H01L21/67051
摘要： A substrate cleaning device and a substrate cleaning method reduces liquid drops remaining on a substrate to prevent the irregular heating of the substrate by a heating process due to liquid drops or water marks remaining on the substrate. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto the surface of a substrate such that a region onto which the cleaning liquid is poured moves from a central part toward the circumference of the substrate. A gas is jetted radially outward at a region on the surface of the substrate behind a region onto which the cleaning liquid is poured with respect to the rotating direction of the substrate. The gas forces a liquid film of the cleaning liquid flowing on the surface of the substrate to flow in a circumferential direction and a radially outward direction.
摘要翻译：基板清洁装置和基板清洗方法减少了残留在基板上的液滴，以防止由于基板上残留液滴或水痕而导致的加热过程对基板的不规则加热。将清洗液通过清洗液注入喷嘴注入到基板的表面上，使清洗液注入的区域从基板的中心部朝向圆周方向移动。在衬底表面上的相对于衬底的旋转方向倾倒有清洁液体的区域之后的区域处，径向向外喷射气体。气体迫使在基板表面流动的清洗液体的液膜在圆周方向和径向向外的方向上流动。

6. 发明授权

US08283253B2 Pattern forming method, semiconductor device manufacturing method and semiconductor device manufacturing apparatus 有权
标题翻译：图案形成方法，半导体器件制造方法和半导体器件制造装置
公开(公告)号：US08283253B2
公开(公告)日：2012-10-09
申请号：US12370868
申请日：2009-02-13
申请人： Hidetami Yaegashi , Satoru Shimura , Takashi Hayakawa
发明人： Hidetami Yaegashi , Satoru Shimura , Takashi Hayakawa
IPC分类号： H01L21/311
CPC分类号： H01L21/0337 , H01L21/0273 , H01L21/0338 , H01L27/105 , H01L27/1052
摘要： A pattern forming method for forming a pattern serving as a mask, includes a process for forming a first pattern 105, a process for trimming a width of the first pattern 105, a process for forming a boundary layer 106 on a surface of the first pattern 105, a process for forming a second mask material layer 107 on a surface of the boundary layer 106, a process for removing a part of the second mask material layer 107 to expose top portions of the boundary layer 106, and a process for exposing the first pattern 105 and forming a second pattern having the second mask material layer 107 at a top portion thereof by etching the boundary layer 106.
摘要翻译：用于形成用作掩模的图案的图案形成方法包括形成第一图案105的工艺，用于修整第一图案105的宽度的处理，在第一图案的表面上形成边界层106的工艺 105，在边界层106的表面上形成第二掩模材料层107的工艺，用于去除第二掩模材料层107的一部分以暴露边界层106的顶部的工艺，以及用于暴露边界层106的工艺第一图案105，并且通过蚀刻边界层106在其顶部形成具有第二掩模材料层107的第二图案。

7. 发明申请

US20090209109A1 PATTERN FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS 有权
标题翻译：图案形成方法，半导体器件制造方法和半导体器件制造装置
公开(公告)号：US20090209109A1
公开(公告)日：2009-08-20
申请号：US12370768
申请日：2009-02-13
申请人： Hidetami Yaegashi , Satoru Shimura
发明人： Hidetami Yaegashi , Satoru Shimura
IPC分类号： G03F7/20 , H01L21/302
CPC分类号： H01L21/0337 , H01L27/105 , H01L27/1052
摘要： Provided is a pattern forming method for forming a pattern serving as a mask, which includes: a process for forming a first pattern 105 made of a photoresist; a process for forming a boundary layer 106 at sidewall portions and top portions of the first pattern 105; a process for forming a second mask material layer 107 to cover a surface of the boundary layer 106; a process for removing a part of the second mask material layer 107 to expose top portions of the boundary layer 106; a process for forming a second pattern made of the second mask material layer 107 by etching and removing the boundary layer 106; and a trimming process for reducing a width of the first pattern 105 and a width of the second pattern to predetermined widths.
摘要翻译：提供一种用于形成用作掩模的图案的图案形成方法，其包括：用于形成由光致抗蚀剂制成的第一图案105的工艺; 用于在第一图案105的侧壁部分和顶部形成边界层106的工艺; 形成覆盖边界层106的表面的第二掩模材料层107的工序; 用于去除第二掩模材料层107的一部分以暴露边界层106的顶部的工艺; 用于通过蚀刻和去除边界层106形成由第二掩模材料层107制成的第二图案的工艺; 以及用于将第一图案105的宽度和第二图案的宽度减小到预定宽度的修剪处理。

8. 发明申请

US20070184379A1 Peeling-off method and reworking method of resist film 审中-公开
标题翻译：抗剥离膜剥离方法及修复方法
公开(公告)号：US20070184379A1
公开(公告)日：2007-08-09
申请号：US10591345
申请日：2005-03-01
申请人： Shigeo Ashigaki , Yoshihiro Kato , Yoshihiro Hirota , Yusuke Muraki , Tetsu Kawasaki , Satoru Shimura
发明人： Shigeo Ashigaki , Yoshihiro Kato , Yoshihiro Hirota , Yusuke Muraki , Tetsu Kawasaki , Satoru Shimura
IPC分类号： G03C1/00
CPC分类号： G03F7/42 , H01L21/31133 , H01L21/31144 , H01L21/67051
摘要： A processing method of a substrate includes: a step of forming an Si—C based film and a resist film in turn on an objective film to be etched that has been formed on a substrate; a first etching step of etching the Si—C based film making use of the resist film as a mask; and a second etching step of etching the objective film to be etched making use of the resist film and the Si—C based film as a mask. The processing method further includes a peeling-off step of peeling-off the resist film at a desired timing. The peeling-off step includes a preparing step of preparing an organic solvent as a release agent, and an applying step of applying the organic solvent to the resist film.
摘要翻译：基板的处理方法包括：依次形成Si-C基膜和抗蚀剂膜的步骤，所述Si-C基膜和抗蚀剂膜依次形成在基板上形成的待蚀刻目标膜上; 蚀刻使用抗蚀剂膜作为掩模的Si-C基膜的第一蚀刻步骤; 以及使用抗蚀剂膜和Si-C基膜作为掩模蚀刻待蚀刻的目标膜的第二蚀刻步骤。该处理方法还包括在期望的时刻剥离抗蚀剂膜的剥离步骤。剥离步骤包括制备作为脱模剂的有机溶剂的制备步骤和将有机溶剂施加到抗蚀剂膜的施加步骤。

9. 发明申请

US20070044823A1 Substrate cleaning device and substrate cleaning method 有权
标题翻译：基板清洗装置和基板清洗方法
公开(公告)号：US20070044823A1
公开(公告)日：2007-03-01
申请号：US11509737
申请日：2006-08-25
申请人： Taro Yamamoto , Hideharu Kyouda , Tetsu Kawasaki , Satoru Shimura
发明人： Taro Yamamoto , Hideharu Kyouda , Tetsu Kawasaki , Satoru Shimura
IPC分类号： B08B3/02
CPC分类号： H01L21/67051
摘要： A substrate cleaning device and a substrate cleaning method reduces liquid drops remaining on a substrate to prevent the irregular heating of the substrate by a heating process due to liquid drops or water marks remaining on the substrate. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto the surface of a substrate such that a region onto which the cleaning liquid is poured moves from a central part toward the circumference of the substrate. A gas is jetted radially outward at a region on the surface of the substrate behind a region onto which the cleaning liquid is poured with respect to the rotating direction of the substrate. The gas forces a liquid film of the cleaning liquid flowing on the surface of the substrate to flow in a circumferential direction and a radially outward direction. The cleaning liquid poured out onto the surface of the substrate through the cleaning liquid pouring nozzle is restrained from flowing by a liquid damming member held at a height equal to or lower than that of the nozzle exit of the cleaning liquid pouring nozzle to collect a mass of the cleaning liquid. A high centrifugal force acts on the mass of the cleaning liquid to force the mass of the cleaning liquid to flow outward even if the substrate is rotated at a low rotating speed.
摘要翻译：基板清洁装置和基板清洗方法减少了残留在基板上的液滴，以防止由于基板上残留液滴或水痕而导致的加热过程对基板的不规则加热。将清洗液通过清洗液注入喷嘴注入到基板的表面上，使清洗液注入的区域从基板的中心部朝向圆周方向移动。在衬底表面上的相对于衬底的旋转方向倾倒有清洁液体的区域之后的区域处，径向向外喷射气体。气体迫使在基板表面流动的清洗液体的液膜在圆周方向和径向向外的方向上流动。清洗液通过清洗液倒出嘴倾倒在基材表面上被限制在保持在与清洗液注入嘴的喷嘴出口相同或更小的高度的液体阻塞构件的流动中，从而收集质量的清洗液。即使基板以低转速旋转，高离心力作用在清洁液体上，以迫使清洁液体的质量向外流出。

10. 发明申请

US20060068337A1 Substrate processing method 审中-公开
标题翻译：基板加工方法
公开(公告)号：US20060068337A1
公开(公告)日：2006-03-30
申请号：US11218637
申请日：2005-09-06
申请人： Keiji Tanouchi , Satoru Shimura
发明人： Keiji Tanouchi , Satoru Shimura
IPC分类号： G03C5/26
CPC分类号： G03F7/3021 , G03F7/32 , G03F7/40
摘要： In the present invention, a substrate processing method, in which a developing treatment is performed after exposure processing of a pattern, includes a shaping step of shaping the shape of a resist pattern such that a side wall portion of the resist pattern after the developing treatment swells out to a groove side and a swell-out portion swelling out to the groove side and concavely curving with respect to the groove side is formed at a corner portion of a bottom of the resist pattern. According to the present invention, the side wall portion is made to swell out to improve the striation of the resist pattern, resulting in a preferable shape of a pattern after etching treatment.
摘要翻译：在本发明中，在图案的曝光处理之后进行显影处理的基板处理方法包括使抗蚀剂图案的形状成形，使得在显影处理后的抗蚀剂图案的侧壁部分膨胀到凹槽侧，并且在抗蚀剂图案的底部的角部处形成有膨胀到凹槽侧的膨胀部分并且相对于凹槽侧凹陷弯曲。根据本发明，使侧壁部分膨胀以改善抗蚀剂图案的条纹，导致蚀刻处理后的图案的优选形状。

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