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1. 发明申请

US20120312472A1 SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS 审中-公开
标题翻译：半导体器件制造设备
公开(公告)号：US20120312472A1
公开(公告)日：2012-12-13
申请号：US13591281
申请日：2012-08-22
申请人： Hidetami Yaegashi , Satoru Shimura
发明人： Hidetami Yaegashi , Satoru Shimura
IPC分类号： H01L21/308
CPC分类号： H01L21/0337 , H01L27/105 , H01L27/1052
摘要： A semiconductor device manufacturing apparatus includes: a first pattern forming unit for forming a first pattern by patterning a first mask material layer; a boundary layer forming unit for forming a boundary layer at sidewall portions and top portions of the first pattern; a second mask material layer forming unit for forming a second mask material layer so as to cover a surface of the boundary layer; a second mask material removing unit for removing a part of the second mask material layer to expose top portions of the boundary layer; a boundary layer etching unit for forming a second pattern by etching and removing the boundary layer and forming a void between the sidewall portions of the first pattern and the second mask material layer; and a trimming unit for reducing a width of the first pattern and a width of the second pattern to predetermined widths.
摘要翻译：半导体器件制造装置包括：第一图案形成单元，用于通过图案化第一掩模材料层来形成第一图案; 边界层形成单元，用于在第一图案的侧壁部分和顶部处形成边界层; 第二掩模材料层形成单元，用于形成第二掩模材料层以覆盖边界层的表面; 第二掩模材料去除单元，用于去除所述第二掩模材料层的一部分以暴露所述边界层的顶部; 边界层蚀刻单元，用于通过蚀刻和去除边界层并在第一图案的侧壁部分和第二掩模材料层之间形成空隙来形成第二图案; 以及修整单元，用于将第一图案的宽度和第二图案的宽度减小到预定宽度。

2. 发明申请

US20110220609A1 PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS 审中-公开
标题翻译：等离子体蚀刻方法和等离子体蚀刻装置
公开(公告)号：US20110220609A1
公开(公告)日：2011-09-15
申请号：US13044741
申请日：2011-03-10
申请人： Hidetami Yaegashi , Masanobu Honda , Akitaka Shimizu
发明人： Hidetami Yaegashi , Masanobu Honda , Akitaka Shimizu
IPC分类号： C23F1/08 , C23F1/00
CPC分类号： H01L21/3065 , H01J37/32091 , H01J37/32165 , H01J37/32568 , H01L21/31116 , H01L21/31122 , H01L21/32137 , H01L21/32139 , H01L21/67103 , H01L21/67109 , H01L21/6831
摘要： There are provided a plasma etching method and a plasma etching apparatus capable of independently controlling distributions of line widths and heights of lines in a surface of a wafer. The plasma etching method for performing a plasma etching on a substrate W by irradiating plasma containing charged particles and neutral particles to the substrate W includes controlling a distribution of reaction amounts between the substrate W and the neutral particles in a surface of the substrate W by adjusting a temperature distribution in the surface of the substrate W supported by a support 105, and controlling a distribution of irradiation amounts of the charged particles in the surface of the substrate W by adjusting a gap between the substrate W supported by the support 105 and an electrode 120 provided so as to face the support 105.
摘要翻译：提供了能够独立地控制晶片表面的线宽和线的分布的等离子体蚀刻方法和等离子体蚀刻装置。用于通过将含有带电粒子和中性粒子的等离子体等离子体等离子体蚀刻到基板W上的等离子体蚀刻方法包括通过调整基板W的表面中的基板W与中性粒子之间的反应量的分布，由支撑体105支撑的基板W的表面的温度分布，通过调整由支撑体105支撑的基板W与电极之间的间隙来控制基板W的表面的带电粒子的照射量的分布 120设置成面对支撑件105。

3. 发明申请

US20110027727A1 Substrate developing method, substrate processing method and developing solution supply nozzle 有权
标题翻译：基板显影方法，基板加工方法和显影液供应喷嘴
公开(公告)号：US20110027727A1
公开(公告)日：2011-02-03
申请号：US12923703
申请日：2010-10-05
申请人： Momoko Shizukuishi , Hidetami Yaegashi
发明人： Momoko Shizukuishi , Hidetami Yaegashi
IPC分类号： G03C5/00
CPC分类号： H01L21/67178 , G03F7/3021 , H01L21/6715 , H01L21/67184 , H01L21/67225
摘要： According to the present invention, an anti-reflective film formed under a resist film is removed in a photolithography process of a wafer without affecting the resist film. According to the present invention, in a photolithography process of a substrate, an anti-reflective film having solubility in the developing solution is formed and thereafter a resist film is formed. In development treatment after exposure processing, a developing solution is supplied to the substrate to develop the resist film. At an instant when the development of the resist film is finished, a second developing solution lower in concentration than the developing solution is supplied to the substrate. Only the anti-reflective film is dissolved and removed by the supply of the second developing solution.
摘要翻译：根据本发明，在晶片的光刻工艺中除去形成在抗蚀剂膜下面的抗反射膜，而不影响抗蚀剂膜。根据本发明，在基板的光刻工序中，形成在显影液中具有溶解性的抗反射膜，之后形成抗蚀剂膜。在曝光处理后的显影处理中，向基板供给显影液以显影抗蚀剂膜。在抗蚀膜的显影结束的瞬间，将比显影液浓度低的第二显影液供给到基板。仅通过供给第二显影液溶解除去抗反射膜。

4. 发明申请

US20080145799A1 Substrate developing method, substrate processing method and developing solution supply nozzle 有权
标题翻译：基板显影方法，基板加工方法和显影液供应喷嘴
公开(公告)号：US20080145799A1
公开(公告)日：2008-06-19
申请号：US12068897
申请日：2008-02-13
申请人： Momoko Shizukuishi , Hidetami Yaegashi
发明人： Momoko Shizukuishi , Hidetami Yaegashi
IPC分类号： G03F7/30
CPC分类号： H01L21/67178 , G03F7/3021 , H01L21/6715 , H01L21/67184 , H01L21/67225
摘要： According to the present invention, an anti-reflective film formed under a resist film is removed in a photolithography process of a wafer without affecting the resist film. According to the present invention, in a photolithography process of a substrate, an anti-reflective film having solubility in the developing solution is formed and thereafter a resist film is formed. In development treatment after exposure processing, a developing solution is supplied to the substrate to develop the resist film. At an instant when the development of the resist film is finished, a second developing solution lower in concentration than the developing solution is supplied to the substrate. Only the anti-reflective film is dissolved and removed by the supply of the second developing solution.
摘要翻译：根据本发明，在晶片的光刻工艺中除去形成在抗蚀剂膜下面的抗反射膜，而不影响抗蚀剂膜。根据本发明，在基板的光刻工序中，形成在显影液中具有溶解性的抗反射膜，之后形成抗蚀剂膜。在曝光处理后的显影处理中，向基板供给显影液以显影抗蚀剂膜。在抗蚀膜的显影结束的瞬间，将比显影液浓度低的第二显影液供给到基板。仅通过供给第二显影液溶解除去抗反射膜。

5. 发明授权

US6017663A Method of processing resist utilizing alkaline component monitoring 失效
标题翻译：利用碱性成分监测处理抗蚀剂的方法
公开(公告)号：US6017663A
公开(公告)日：2000-01-25
申请号：US277735
申请日：1999-03-29
申请人： Hidetami Yaegashi , Yasunori Kawakami , Jae Hoon Park , Keiko Kanzawa , Takayuki Katano , Takayuki Toshima , Yuji Kakazu
发明人： Hidetami Yaegashi , Yasunori Kawakami , Jae Hoon Park , Keiko Kanzawa , Takayuki Katano , Takayuki Toshima , Yuji Kakazu
IPC分类号： G03F7/30 , G03F7/16 , G03F7/20 , G03F7/26 , H01L21/00 , H01L21/027 , G03F9/00
CPC分类号： H01L21/67173 , G03F7/16 , G03F7/26 , G03F7/7075 , G03F7/70866 , H01L21/67017 , H01L21/67178 , Y10S414/135
摘要： A method of forming a resist on a substrate and processing the resist in a resist processing system having a processing region and a non-processing region which are air-conditioned, the method comprising the steps of, transferring the substrate into the non-processing region, coating the resist on the substrate, exposing the coated resist, developing the exposed resist, subjecting the coated resist at least once, to heat treatment in a period from the transferring step to the developing step, detecting at least once, the concentration of an alkaline component which causes defective resolution of the resist in a processing atmosphere in a period from the transferring step to the developing step, setting a threshold value for the concentration of the alkaline component in the processing atmosphere which causes the defective resolution of the resist, and controlling and changing at least one processing atmosphere in the steps in accordance with a detected concentration of the alkaline component and the threshold value.
摘要翻译：一种在基板上形成抗蚀剂并在具有空调的处理区域和非处理区域的抗蚀剂处理系统中处理抗蚀剂的方法，该方法包括以下步骤：将基板转移到非处理区域将抗蚀剂涂覆在基材上，使涂覆的抗蚀剂曝光，显影曝光的抗蚀剂，使涂覆的抗蚀剂至少一次，在从转印步骤到显影步骤的时间段内进行热处理，至少检测一次，在从转印步骤到显影步骤的期间，处理气氛中的抗蚀剂分辨率降低的碱性成分，在导致抗蚀剂分辨率不良的处理气氛中设定碱成分浓度的阈值，以及根据检测到的碱性com的浓度控制和改变步骤中的至少一种处理气氛 ponent和阈值。

6. 发明授权

US5518542A Double-sided substrate cleaning apparatus 失效
标题翻译：双面基板清洗装置
公开(公告)号：US5518542A
公开(公告)日：1996-05-21
申请号：US336213
申请日：1994-11-04
申请人： Hiroyuki Matsukawa , Akira Yonemizu , Michiaki Matsushita , Akihiro Fujimoto , Takashi Takekuma , Hidetami Yaegashi , Takahide Fukuda
发明人： Hiroyuki Matsukawa , Akira Yonemizu , Michiaki Matsushita , Akihiro Fujimoto , Takashi Takekuma , Hidetami Yaegashi , Takahide Fukuda
IPC分类号： H01L21/304 , B08B1/04 , B08B3/04 , B08B3/12 , H01L21/00 , H01L21/311 , H01L21/677 , B05C1/00
CPC分类号： H01L21/67173 , B08B1/007 , B08B1/04 , B08B3/04 , B08B3/12 , H01L21/31116 , H01L21/67028 , H01L21/67046 , H01L21/67051 , H01L21/6715 , H01L21/67178 , B08B2203/0288 , Y10S134/902 , Y10S414/136 , Y10S414/141
摘要： There is provided a double-sided substrate cleaning apparatus including a carrier station for loading/unloading a carrier in which objects to be processed are stored, a convey mechanism for conveying an object taken out from the carrier station, at least one cleaning mechanism, arranged along a convey path on which the convey mechanism conveys the object, for cleaning the object, and an object reversing mechanism, arranged along the convey path, for reversing the object.
摘要翻译：提供了一种双面基板清洁装置，包括用于装载/卸载其中存储有待处理物体的载体的承载站，用于传送从承载站取出的物体的传送机构，至少一个清洁机构，布置沿着传送机构传送物体的传送路径，用于清洁物体，以及沿着传送路径布置的用于反转物体的物体反转机构。

7. 发明申请

US20120220132A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：US20120220132A1
公开(公告)日：2012-08-30
申请号：US13403604
申请日：2012-02-23
申请人： Kenichi OYAMA , Shohei YAMAUCHI , Hidetami YAEGASHI
发明人： Kenichi OYAMA , Shohei YAMAUCHI , Hidetami YAEGASHI
IPC分类号： H01L21/32
CPC分类号： H01L21/32139 , H01L21/02164 , H01L21/0228 , H01L21/0337 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/32137
摘要： A semiconductor device manufacturing method includes: forming a core layer, an anti-reflection film and a photoresist layer on a layer to be etched of a substrate; trimming first line patterns of the photoresist layer; forming a first film on the first line patterns; removing the first film such that the first film is left in sidewall portions of the first line patterns of the photoresist layer; removing the photoresist layer; producing the core layer into second line patterns by etching the anti-reflection film and the core layer; forming a second film on the core layer produced into the second line patterns; removing the second film such that the second film is left in sidewall portions of the second line patterns of the core layer; and producing the layer to be etched into third line patterns by etching the layer to be etched.
摘要翻译：半导体器件制造方法包括：在要蚀刻的衬底的层上形成芯层，抗反射膜和光致抗蚀剂层; 修整光致抗蚀剂层的第一线图案; 在第一线图案上形成第一片; 去除第一膜，使得第一膜留在光致抗蚀剂层的第一线图案的侧壁部分中; 去除光致抗蚀剂层; 通过蚀刻防反射膜和芯层将芯层制成第二线图案; 在芯层上形成第二膜，形成第二线图案; 去除第二膜，使得第二膜留在芯层的第二线图案的侧壁部分中; 并通过蚀刻待蚀刻的层来产生要蚀刻的第三线图案。

8. 发明授权

US07846648B2 Substrate developing method, substrate processing method and developing solution supply nozzle 有权
标题翻译：基板显影方法，基板加工方法和显影液供应喷嘴
公开(公告)号：US07846648B2
公开(公告)日：2010-12-07
申请号：US12068897
申请日：2008-02-13
申请人： Momoko Shizukuishi , Hidetami Yaegashi
发明人： Momoko Shizukuishi , Hidetami Yaegashi
IPC分类号： G03F7/32
CPC分类号： H01L21/67178 , G03F7/3021 , H01L21/6715 , H01L21/67184 , H01L21/67225
摘要： According to the present invention, an anti-reflective film formed under a resist film is removed in a photolithography process of a wafer without affecting the resist film. According to the present invention, in a photolithography process of a substrate, an anti-reflective film having solubility in the developing solution is formed and thereafter a resist film is formed. In development treatment after exposure processing, a developing solution is supplied to the substrate to develop the resist film. At an instant when the development of the resist film is finished, a second developing solution lower in concentration than the developing solution is supplied to the substrate. Only the anti-reflective film is dissolved and removed by the supply of the second developing solution.
摘要翻译：根据本发明，在晶片的光刻工艺中除去形成在抗蚀剂膜下面的抗反射膜，而不影响抗蚀剂膜。根据本发明，在基板的光刻工序中，形成在显影液中具有溶解性的抗反射膜，之后形成抗蚀剂膜。在曝光处理后的显影处理中，向基板供给显影液以显影抗蚀剂膜。在抗蚀膜的显影结束的瞬间，将比显影液浓度低的第二显影液供给到基板。仅通过供给第二显影液溶解除去抗反射膜。

9. 发明授权

US07367710B2 Developing solution supply nozzle with stirrer 有权
标题翻译：开发溶液供应喷嘴与搅拌器
公开(公告)号：US07367710B2
公开(公告)日：2008-05-06
申请号：US11010347
申请日：2004-12-14
申请人： Momoko Shizukuishi , Hidetami Yaegashi
发明人： Momoko Shizukuishi , Hidetami Yaegashi
IPC分类号： B01F15/02
CPC分类号： H01L21/67178 , G03F7/3021 , H01L21/6715 , H01L21/67184 , H01L21/67225
摘要： According to the present invention, an anti-reflective film formed under a resist film is removed in a photolithography process of a wafer without affecting the resist film. According to the present invention, in a photolithography process of a substrate, an anti-reflective film having solubility in the developing solution is formed and thereafter a resist film is formed. In development treatment after exposure processing, a developing solution is supplied to the substrate to develop the resist film. At an instant when the development of the resist film is finished, a second developing solution lower in concentration than the developing solution is supplied to the substrate. Only the anti-reflective film is dissolved and removed by the supply of the second developing solution. The developing solution is supplied to the substrate by a supply nozzle having a stirrer.
摘要翻译：根据本发明，在晶片的光刻工艺中除去形成在抗蚀剂膜下面的抗反射膜，而不影响抗蚀剂膜。根据本发明，在基板的光刻工序中，形成在显影液中具有溶解性的抗反射膜，之后形成抗蚀剂膜。在曝光处理后的显影处理中，向基板供给显影液以显影抗蚀剂膜。在抗蚀膜的显影结束的瞬间，将比显影液浓度低的第二显影液供给到基板。仅通过供给第二显影液溶解除去抗反射膜。通过具有搅拌器的供给喷嘴将显影液供给到基板。

10. 发明申请

US20070148972A1 Method of repairing seed layer for damascene interconnects 审中-公开
标题翻译：修复大马士革互连种子层的方法
公开(公告)号：US20070148972A1
公开(公告)日：2007-06-28
申请号：US11643959
申请日：2006-12-22
申请人： Kenichi Hara , Mitsuaki Iwashita , Hidetami Yaegashi
发明人： Kenichi Hara , Mitsuaki Iwashita , Hidetami Yaegashi
IPC分类号： H01L21/44
CPC分类号： H01L21/76868 , H01L21/288 , H01L21/76873
摘要： Disclosed is a method of repairing, before embedding a recess with copper, defects of a seed layer formed by sputtering, when forming damascene interconnects. After a copper (silver is also available) nanoparticle-containing sol, e.g., a copper ink is applied onto a substrate, an etch back process for removing the excessive copper ink is performed by supplying an organic solvent onto the substrate. Thereafter, a disperse medium in the copper ink is evaporated by a baking process; and then a dispersant in the copper ink is removed and the nanoparticles are combined with each other to provide a continuous copper film by an annealing process. The etch back process prevents development of defects in a repaired seed layer.
摘要翻译：公开了一种在形成镶嵌互连件之前，在嵌入具有铜的凹槽之前，通过溅射形成的晶种层的缺陷来修复的方法。在铜（也可以使用银）之后，将含有纳米颗粒的溶胶，例如铜油墨施加到基底上，通过向基底上提供有机溶剂来进行用于去除过量铜油墨的回蚀工艺。此后，通过烘烤工艺蒸发铜油墨中的分散介质; 然后除去铜油墨中的分散剂，并将纳米颗粒彼此组合以通过退火工艺提供连续的铜膜。回蚀过程防止修复的种子层中的缺陷的发展。

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