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1. 发明授权

US5539179A Electrostatic chuck having a multilayer structure for attracting an object 失效
标题翻译：具有吸引物体的多层结构的静电吸盘
公开(公告)号：US5539179A
公开(公告)日：1996-07-23
申请号：US792592
申请日：1991-11-15
申请人： Toshihisa Nozawa , Junichi Arami , Shinji Kubota , Isahiro Hasegawa , Katsuya Okumura
发明人： Toshihisa Nozawa , Junichi Arami , Shinji Kubota , Isahiro Hasegawa , Katsuya Okumura
IPC分类号： B23Q3/15 , H01L21/683 , H02N13/00 , B23K10/00
CPC分类号： H02N13/00 , H01L21/6831 , H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck for electrostatically holding a wafer is provided in a vacuum chamber formed in a magnetron plasma etching apparatus. The electrostatic chuck has a base member, a first insulating layer provided on the base member and made of polyimide, a second insulation layer made of AlN, a conductive sheet provided between first and second insulation layers, and an adhesive layer made of a thermosetting resin and adhering the first insulating layer to the second insulating layer. The wafer is placed on the second insulating layer, and power is supplied from a high voltage power supply to the conductive sheet via a feeding sheet, thereby creating static electricity and hence a coulombic force for holding the wafer on the second insulating layer.
摘要翻译：用于静电保持晶片的静电卡盘设置在形成在磁控管等离子体蚀刻装置中的真空室中。所述静电卡盘具有基材，在所述基材上设置的由聚酰亚胺构成的第一绝缘层，由AlN构成的第二绝缘层，设置在第一绝缘层和第二绝缘层之间的导电片，以及由热固性树脂并且将第一绝缘层粘合到第二绝缘层。将晶片放置在第二绝缘层上，并且通过馈电片从高压电源向导电片提供电力，从而产生静电，因此产生用于将晶片保持在第二绝缘层上的库仑力。

2. 发明授权

US5255153A Electrostatic chuck and plasma apparatus equipped therewith 失效
标题翻译：配备有静电卡盘和等离子体装置
公开(公告)号：US5255153A
公开(公告)日：1993-10-19
申请号：US731478
申请日：1991-07-17
申请人： Toshihisa Nozawa , Junichi Arami , Isahiro Hasegawa , Katsuya Okumura
发明人： Toshihisa Nozawa , Junichi Arami , Isahiro Hasegawa , Katsuya Okumura
IPC分类号： H01L21/683 , H02N13/00
CPC分类号： H01L21/6833 , H01L21/6831 , H02N13/00
摘要： An electrostatic chuck having an electrostatic holding member arranged on an upper surface of the chuck main body for holding a semiconductor device during a plasma etching process. The electrostatic holding member includes a pair of insulating polyimide members and a conductive member interposed between the polyimide members. In operation, a voltage is applied to the first conductive member in order to generate static electricity to be applied to the electrostatic holding member for holding the semiconductor device.
摘要翻译：一种静电吸盘，其具有布置在卡盘主体的上表面上的静电保持构件，用于在等离子体蚀刻工艺期间保持半导体器件。静电保持构件包括一对绝缘聚酰亚胺构件和插入在聚酰亚胺构件之间的导电构件。在操作中，向第一导电构件施加电压，以产生施加到用于保持半导体器件的静电保持构件的静电。

3. 发明授权

US5221403A Support table for plate-like body and processing apparatus using the table 失效
标题翻译：使用表的板状体和加工装置的支撑台
公开(公告)号：US5221403A
公开(公告)日：1993-06-22
申请号：US732410
申请日：1991-07-18
申请人： Toshihisa Nozawa , Junichi Arami , Isahiro Hasegawa , Haruo Okano
发明人： Toshihisa Nozawa , Junichi Arami , Isahiro Hasegawa , Haruo Okano
IPC分类号： C23C14/50 , C23C14/54 , C23C16/458 , C23C16/509 , H01J37/34 , H01L21/00 , H01L21/683
CPC分类号： H01L21/67069 , C23C14/50 , C23C14/541 , C23C16/4586 , C23C16/509 , H01J37/3244 , H01J37/3408 , H01J37/3435 , H01L21/6838 , H01J2237/2001 , H01J2237/2007 , H01J2237/334
摘要： A wafer support table is provided in a vacuum chamber of a magnetron plasma etching apparatus. This support table includes a first member having a mechanism for adjusting the temperature of a wafer, a second member having an electrostatic chuck for supporting the wafer on its upper surface, and a gas supply mechanism for supplying a gas between the first and second members.

4. 发明授权

US5290381A Plasma etching apparatus 失效
标题翻译：等离子刻蚀装置
公开(公告)号：US5290381A
公开(公告)日：1994-03-01
申请号：US799056
申请日：1991-11-27
申请人： Toshihisa Nozawa , Junichi Arami , Keiji Horioka , Isahiro Hasegawa
发明人： Toshihisa Nozawa , Junichi Arami , Keiji Horioka , Isahiro Hasegawa
IPC分类号： H01L21/302 , H01J37/32 , H01L21/00 , H01L21/3065 , H01L21/683
CPC分类号： H01L21/67069 , H01J37/32431 , H01L21/6838 , H01J2237/2001 , H01J2237/334
摘要： A plasma etching apparatus comprising a susceptor for holding a semiconductive wafer, a cooling jacket having a coolant of a large cooling capacity and capable of quickly cooling said susceptor to an intended low temperature, a process chamber enclosing the susceptor and the cooling jacket, a gas discharging mechanism for evacuating the process chamber, an insulating member interposed between the susceptor and the cooling jacket, a gas supply device for supplying gas to an O-ring holding groove arranged on the interface regions of the susceptor, the insulating member and the cooling section and a pressure control mechanism for controlling the pressure of the supplied gas.
摘要翻译：一种等离子体蚀刻装置，包括用于保持半导体晶片的基座，具有大冷却能力的冷却剂并能够快速地将所述基座冷却到预期低温的冷却套，封闭基座和冷却套的处理室，气体用于排出处理室的排出机构，插入在基座和冷却套之间的绝缘构件，用于将气体供给到设置在基座，绝缘构件和冷却区的界面区域上的O形环保持槽的气体供给装置以及用于控制供给气体的压力的压力控制机构。

5. 发明授权

US5250137A Plasma treating apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5250137A
公开(公告)日：1993-10-05
申请号：US731475
申请日：1991-07-17
申请人： Junichi Arami , Toshihisa Nozawa , Keiji Horioka , Katsuya Okumura
发明人： Junichi Arami , Toshihisa Nozawa , Keiji Horioka , Katsuya Okumura
IPC分类号： C23C14/40 , C23C14/50 , C23F4/00 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/683 , B05C5/00
CPC分类号： H01L21/67069 , H01L21/6831
摘要： A plasma treating apparatus includes an electrostatic chuck constructing an electrically conductive layer and insulating layers having the conductive layer sandwiched therebetween. A RF current supplied to a susceptor is prevented from flowing into the conductive layer of the chuck so as to suppress the RF current leakage from a cable connected to the conductive layer of the chuck for high voltage application. The plasma treating apparatus includes a chamber having a first electrode, a second electrode disposed within the chamber, a cylindrical high frequency power supply member inserted from the outside into the chamber such that the tip of the member is connected to the second electrode, high frequency power supply means for supplying a high frequency power through the power supply member to the second electrode so as to generate a plasma in the region between the first and second electrodes within the chamber, an electrostatic chuck arranged on the second electrode and constructed such that a conductive layer is formed within an insulating layer, a cable for applying a high voltage, the cable being inserted into the power supply member and having the tip connected to the conductive layer of the electrostatic chuck, and a power source connected to the cable.
摘要翻译：等离子体处理装置包括构成导电层的静电卡盘和夹在其间的导电层的绝缘层。防止提供给基座的RF电流流入卡盘的导电层，以便抑制与电缆连接的电缆的RF电流泄漏，以用于高电压施加。等离子体处理装置包括具有第一电极，设置在室内的第二电极的室，从外部插入室的圆柱形高频电源构件，使得构件的尖端连接到第二电极，高频电源装置，用于通过所述电源构件向所述第二电极提供高频电力，以在所述室内的所述第一和第二电极之间的区域中产生等离子体;静电吸盘，其布置在所述第二电极上，导电层形成在绝缘层内，用于施加高电压的电缆，所述电缆插入到电源构件中，并且尖端连接到静电卡盘的导电层，以及连接到电缆的电源。

6. 发明授权

US5271788A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5271788A
公开(公告)日：1993-12-21
申请号：US917361
申请日：1992-07-23
申请人： Makoto Hasegawa , Takaya Matsushita , Keiji Horioka , Isahiro Hasegawa , Toshihisa Nozawa , Yoshio Ishikawa , Masahito Hiratsuka , Satoshi Kaneko
发明人： Makoto Hasegawa , Takaya Matsushita , Keiji Horioka , Isahiro Hasegawa , Toshihisa Nozawa , Yoshio Ishikawa , Masahito Hiratsuka , Satoshi Kaneko
IPC分类号： H01J37/32 , C23F1/02
CPC分类号： H01J37/32082 , H01J37/3255 , H01J37/32623 , H01J37/32642 , H01J37/3266
摘要： A magnetron plasma etching apparatus comprises a suscepter serving as an electrode on which a silicon wafer is mounted. A carbon ring having an outer diameter larger than the diameter of the wafer and an electrical resistance lower than that of the wafer, is arranged around the suscepter. The carbon ring is electrically connected to the suscepter. The carbon ring improves uniformity of etching of the wafer.

7. 发明授权

US5223113A Apparatus for forming reduced pressure and for processing object 失效
标题翻译：用于形成降低压力和加工对象的装置
公开(公告)号：US5223113A
公开(公告)日：1993-06-29
申请号：US732240
申请日：1991-07-18
申请人： Satoshi Kaneko , Taichi Fugita , Toshihisa Nozawa , Yoichi Ueda , Yukimasa Yoshida , Isahiro Hasegawa , Haruo Okano
发明人： Satoshi Kaneko , Taichi Fugita , Toshihisa Nozawa , Yoichi Ueda , Yukimasa Yoshida , Isahiro Hasegawa , Haruo Okano
IPC分类号： H01L21/00 , H01L21/677
CPC分类号： H01L21/67126 , H01L21/67103 , H01L21/67742
摘要： A semiconductor wafers processing apparatus comprises a susceptor for mounting and fixing a wafer thereon, a cooling jacket for cooling the susceptor, a process chamber whose wall encloses the susceptor and the cooling jacket, an O-ring for shielding from process atmosphere in the process chamber a clearance formed between an inner cylinder of the process chamber wall and the outer circumferences of the susceptor and the cooling jacket, and an exhaust pump for exhausting gas in the clearance. It further comprises load lock chambers for carrying the wafer into and out of the process chamber, and heat insulating members interposed between those faces of the process chamber and each of the load lock chambers which are opposed to each other. The process chamber wall can be heat-insulated from the susceptor and the cooling jacket by the exhausted clearance and the process chamber can be heat-insulated from each of the load lock chambers by the heat insulating members.

8. 发明授权

US06261428B1 Magnetron plasma process apparatus 失效
标题翻译：磁控管等离子体处理装置
公开(公告)号：US06261428B1
公开(公告)日：2001-07-17
申请号：US08183787
申请日：1994-01-21
申请人： Toshihisa Nozawa , Keiji Horioka , Isahiro Hasegawa
发明人： Toshihisa Nozawa , Keiji Horioka , Isahiro Hasegawa
IPC分类号： C23C1434
CPC分类号： H01J37/3408 , H01J37/3455
摘要： A magnetron plasma process apparatus comprises a process chamber, an upper electrode and a lower electrode, both located within the process chamber and extending parallel to each other, a gas-supplying system for supplying a process gas into the space between the electrodes, a high-frequency power supply for generating an electric field, to thereby to form plasma from the process gas, and magnetic field generating section for generating a magnetic field which extends through the space between the electrodes. The magnetic field generating section has a pair of permanent magnets located outside the process chamber, sandwiching the space between the electrodes. The magnetic field generated by this section extends through said space, from one of the magnets to the other thereof and substantially parallel to the electrodes, and serves to achieve magnetron plasma process on an object placed on the lower electrode.
摘要翻译：磁控管等离子体处理装置包括处理室，上电极和下电极，两者都位于处理室内并且彼此平行延伸;气体供应系统，用于将处理气体供应到电极之间的空间中，高用于产生电场，从而从处理气体形成等离子体的频率电源以及用于产生延伸穿过电极之间的空间的磁场的磁场产生部。磁场产生部分具有位于处理室外的一对永磁体，夹在电极之间的空间。由该部分产生的磁场延伸穿过所述空间，从一个磁体到另一个磁体并且基本上平行于电极，并且用于在放置在下电极上的物体上实现磁控管等离子体处理。

9. 发明授权

US5234527A Liquid level detecting device and a processing apparatus 失效
标题翻译：液面检测装置和处理装置
公开(公告)号：US5234527A
公开(公告)日：1993-08-10
申请号：US731473
申请日：1991-07-17
申请人： Toshihisa Nozawa , Junichi Arami , Yukimasa Yoshida , Keiji Horioka
发明人： Toshihisa Nozawa , Junichi Arami , Yukimasa Yoshida , Keiji Horioka
IPC分类号： C23C14/54 , B01J3/00 , C23C16/46 , C23F4/00 , G01F23/22 , G01F23/24 , H01L21/302 , H01L21/3065
CPC分类号： B01J3/002 , G01F23/22 , H01J2237/2001
摘要： A liquid level detecting device used in a vacuum processing apparatus, the device comprising a liquid container section, an inlet pipe for liquid supply connected to the liquid container section, and outlet pipe for discharging the liquid when the liquid in the liquid container section overflows a predetermined liquid level, a temperature measurement terminal provided in the liquid container section, for detecting the temperature of the liquid in the container section, means for heating or cooling the temperature measurement terminal, and a liquid level detecting section for detecting the surface level of the liquid on the basis of the difference between two temperatures of the liquid measured when the heating or cooling means is in contact with the liquid and when not in contact.
摘要翻译：一种用于真空处理装置的液位检测装置，该装置包括液体容器部分，与液体容器部分连接的液体供给入口管，以及当液体容器部分中的液体溢出时排出液体的出口管预定液位，设置在液体容器部分中的用于检测容器部分中的液体的温度的温度测量端子，用于加热或冷却温度测量端子的装置，以及液位检测部分，用于检测基于当加热或冷却装置与液体接触时和当不接触时测量的液体的两个温度之间的差异的液体。

10. 发明授权

US09117764B2 Etching method, substrate processing method, pattern forming method, method for manufacturing semiconductor element, and semiconductor element 有权
标题翻译：蚀刻方法，基板处理方法，图案形成方法，半导体元件的制造方法以及半导体元件
公开(公告)号：US09117764B2
公开(公告)日：2015-08-25
申请号：US13819038
申请日：2011-07-29
申请人： Takaaki Matsuoka , Toshihisa Nozawa , Toshiyasu Hori
发明人： Takaaki Matsuoka , Toshihisa Nozawa , Toshiyasu Hori
IPC分类号： H01L21/302 , H01L21/308 , H01J37/32 , H01L21/02 , H01L21/027 , H01L21/311 , G03F7/004 , G03F7/075 , G03F7/09 , G03F7/20
CPC分类号： H01L21/3081 , G03F7/0046 , G03F7/0752 , G03F7/094 , G03F7/2041 , H01J37/32192 , H01L21/0212 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/0276 , H01L21/3086 , H01L21/31111 , H01L21/31122
摘要： A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist layer (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remained fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost.
摘要翻译：在作为被处理基板的硅基板上形成氟碳层（步骤A）。在这样形成的碳氟化合物层上形成抗蚀剂层（步骤B）。然后，通过使抗蚀剂层通过光致抗蚀剂层曝光（步骤C）将抗蚀剂层图案化为预定的形状。使用图案化为预定形状的抗蚀剂层作为掩模来蚀刻氟碳层（步骤D）。接下来，除去作为掩模的抗蚀剂层（步骤E）。之后，使用残留的氟碳层作为掩模蚀刻硅衬底（步骤F）。由于碳氟化合物层本身作为抗反射膜和危害掩模起作用，所以可以提高处理的可靠性，同时降低成本。

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