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1. 发明申请

US20060003684A1 Grating and clean room system comprising the same 审中-公开
标题翻译：包括它的光栅和洁净室系统
公开(公告)号：US20060003684A1
公开(公告)日：2006-01-05
申请号：US11143589
申请日：2005-06-03
申请人： Jung-Sung Hwang , Chang-Min Cho , Jae-Hyun Yang , Sang-Mun Chon , Jae-Bong Kim
发明人： Jung-Sung Hwang , Chang-Min Cho , Jae-Hyun Yang , Sang-Mun Chon , Jae-Bong Kim
IPC分类号： F24F7/007
CPC分类号： F24F13/068 , F24F3/161
摘要： Grating forming the floor of a clean room minimizes turbulence and enhances the rate at which air is discharged therethrough. The grate includes a base plate having a plurality of through-holes. Each of the through-holes includes a receiving portion through which the air is received and an exhausting portion through which the air is exhausted. The cross-sectional area of the receiving decreases toward the exhausting portion, and the cross-sectional area of the exhausting portion decreases toward the receiving portion.
摘要翻译：形成洁净室的地板的光栅使湍流最小化，并提高空气通过其排出的速率。格栅包括具有多个通孔的基板。每个通孔包括容纳空气的容纳部分和空气排出的排气部分。接收部的截面积朝向排气部减小，排气部的截面积朝向接收部减小。

2. 发明授权

US07573568B2 Method and apparatus for detecting a photolithography processing error, and method and apparatus for monitoring a photolithography process 有权
标题翻译：用于检测光刻处理误差的方法和装置，以及用于监测光刻工艺的方法和装置
公开(公告)号：US07573568B2
公开(公告)日：2009-08-11
申请号：US10909238
申请日：2004-07-30
申请人： Yu-Sin Yang , Chung-Sam Jun , Sang-Mun Chon , Sun-Yong Choi
发明人： Yu-Sin Yang , Chung-Sam Jun , Sang-Mun Chon , Sun-Yong Choi
IPC分类号： G01N21/00
CPC分类号： G03F7/70608 , G03F7/70616
摘要： An apparatus for monitoring a photolithography process includes a measurer and a data processor. The measurer measures an optical characteristic of a substrate. The data processor determines defectiveness of the substrate based on the optical the measurer.
摘要翻译：用于监测光刻工艺的装置包括测量器和数据处理器。测量器测量衬底的光学特性。数据处理器基于光学测量器来确定衬底的缺陷。

3. 发明授权

US07258931B2 Semiconductor wafers having asymmetric edge profiles that facilitate high yield processing by inhibiting particulate contamination 有权
标题翻译：具有不对称边缘轮廓的半导体晶片，其通过抑制颗粒污染而促进高产量处理
公开(公告)号：US07258931B2
公开(公告)日：2007-08-21
申请号：US10601475
申请日：2003-06-23
申请人： Gi-Jung Kim , Woo-Serk Kim , Sang-Mun Chon , Tae-Yeol Heo
发明人： Gi-Jung Kim , Woo-Serk Kim , Sang-Mun Chon , Tae-Yeol Heo
IPC分类号： B32B9/00 , H01L29/06
CPC分类号： H01L21/02021 , Y10T428/12674
摘要： Semiconductor wafers utilize asymmetric edge profiles (EP) to facilitate higher yield semiconductor device processing. These edge profiles are configured to reduce the volume of thin film residues that may form on a top surface of a semiconductor wafer at locations adjacent a peripheral edge thereof. These edges profiles are also configured to inhibit redeposition of residue particulates on the top surfaces of the wafers during semiconductor processing steps. Such steps may include surface cleaning and rinsing steps that may include passing a cleaning or rinsing solution across a wafer or batch of wafers that are held by a cartridge and submerged in the solution.
摘要翻译：半导体晶片利用不对称边缘轮廓（EP）来促进更高产量的半导体器件处理。这些边缘轮廓被配置为减小可能在与其周边边缘相邻的位置处在半导体晶片的顶表面上形成的薄膜残余物的体积。这些边缘轮廓也被配置为在半导体处理步骤期间抑制残余颗粒在晶片的顶表面上的再沉积。这样的步骤可以包括表面清洁和冲洗步骤，其可以包括将清洁或冲洗溶液通过由盒保持并浸没在溶液中的晶片或一批晶片。

4. 发明授权

US07250379B2 Method of forming metal oxide using an atomic layer deposition process 有权
标题翻译：使用原子层沉积工艺形成金属氧化物的方法
公开(公告)号：US07250379B2
公开(公告)日：2007-07-31
申请号：US11144574
申请日：2005-06-03
申请人： Jung-Ho Lee , Jung-Sik Choi , Jun-Hyun Cho , Sang-Mun Chon
发明人： Jung-Ho Lee , Jung-Sik Choi , Jun-Hyun Cho , Sang-Mun Chon
IPC分类号： H01L21/31
CPC分类号： H01L21/0228 , C23C16/40 , C23C16/45553 , H01L21/02164 , H01L21/02181 , H01L21/02186 , H01L21/02274 , H01L21/3141 , H01L21/31604 , H01L21/31608 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645
摘要： In a method of forming a metal oxide, an organic metal compound represented by the following chemical formula is introduced into a chamber to chemisorb the organic metal compound onto a substrate, M[L1]x[L2]y where M represents a metal, L1 and L2 respectively represents a first and second ligands. In addition, x and y are independently integers and a value of (x+y) is 3 to 5. An oxygen-containing compound is introduced into the chamber to form the metal oxide. The metal oxide is formed by reacting an oxygen of the oxygen-containing compound with the metal, and separating the ligand from the metal. Thus, the metal oxide having a superior step coverage and a high dielectric constant may be formed using the organic metal compound by an atomic layer deposition process.
摘要翻译：在形成金属氧化物的方法中，将由以下化学式表示的有机金属化合物引入室中以将有机金属化合物化学吸附到基材上，<？在线配方描述=“在线配方”末端 =“lead”？> M [L1] x [L2] y <？in-line-formula description =“In-line Formulas”end =“tail”？>其中M表示金属，L1和L2分别表示第一和第二配体。此外，x和y独立地为整数，（x + y）的值为3〜5。将含氧化合物引入室中以形成金属氧化物。通过使含氧化合物的氧与金属反应并将配体与金属分离而形成金属氧化物。因此，可以通过原子层沉积工艺使用有机金属化合物形成具有优异的台阶覆盖率和高介电常数的金属氧化物。

5. 发明申请

US20050191768A1 Apparatus and method for measuring substrates 审中-公开
标题翻译：用于测量基板的装置和方法
公开(公告)号：US20050191768A1
公开(公告)日：2005-09-01
申请号：US11054752
申请日：2005-02-09
申请人： Young-Jee Yoon , Chung-Sam Jun , Chul-Gi Song , Sang-Mun Chon
发明人： Young-Jee Yoon , Chung-Sam Jun , Chul-Gi Song , Sang-Mun Chon
IPC分类号： G01N27/416 , G01R31/26 , H01L21/4763 , H01L21/66 , H01L21/768
CPC分类号： H01L22/14 , H01L21/76802 , H01L2924/0002 , H01L2924/00
摘要： A substrate measuring apparatus includes a reference value storage unit, an electron irradiator, a current measuring device, and a property value calculating device. The reference value storage unit stores data on the relationship between current flow in a sample substrate with a contact hole of known characteristics that is irradiated by an electron beam. The current measuring device measures current flow in a test substrate. The property value calculating device calculates the property value of the contact hole formed in a material layer of the test substrate using the current flow in the test substrate and the data stored in the reference value storage unit. The property values of the contact hole may be a surface area of underlying substrate exposed by a contact hole or an amount of residual material remaining in the contact hole.
摘要翻译：基板测量装置包括参考值存储单元，电子辐射器，电流测量装置和属性值计算装置。参考值存储单元存储关于样品基板中的电流与具有由电子束照射的已知特性的接触孔之间的关系的数据。当前的测量装置测量测试基板中的电流。属性值计算装置使用测试基板中的电流和存储在参考值存储单元中的数据来计算形成在测试基板的材料层中的接触孔的属性值。接触孔的特性值可以是由接触孔暴露的下层基板的表面积或残留在接触孔中的残留材料的量。

6. 发明授权

US06927077B2 Method and apparatus for measuring contamination of a semiconductor substrate 失效
标题翻译：用于测量半导体衬底的污染物的方法和装置
公开(公告)号：US06927077B2
公开(公告)日：2005-08-09
申请号：US10704753
申请日：2003-11-12
申请人： Tae-Min Eom , Yu-Sin Yang , Kwan-Woo Ryu , Park-Song Kim , Sang-Mun Chon , Sun-Yong Choi , Chung-Sam Jun
发明人： Tae-Min Eom , Yu-Sin Yang , Kwan-Woo Ryu , Park-Song Kim , Sang-Mun Chon , Sun-Yong Choi , Chung-Sam Jun
IPC分类号： H01L21/66 , G01R31/303 , G01R31/311 , H01L21/00 , G01N21/00 , G01R31/302
CPC分类号： G01R31/303 , G01R31/311
摘要： An apparatus for measuring contamination of a semiconductor substrate includes a chuck for loading a substrate, a position detection means for recognizing a front surface of the loaded substrate to obtain position data of a portion of the substrate to be measured, a first driving part for moving the chuck in accordance with the position data to measure a rear portion of the substrate, and a surface measurement means disposed under the chuck for selectively measuring metal contamination of the substrate at the rear portion of the substrate. In operation, the substrate is loaded onto a chuck, position data of a portion of the substrate to be measured is obtained by recognizing patterns formed on the substrate, the substrate is then moved in accordance with the position data to measure a rear portion of the substrate, and metal contamination is selectively measured at the rear portion of the substrate.
摘要翻译：一种用于测量半导体衬底的污染的装置，包括用于装载衬底的卡盘，位置检测装置，用于识别所加载的衬底的前表面，以获得要测量的衬底的一部分的位置数据，用于移动的第一驱动部件所述卡盘根据位置数据来测量所述基板的后部;以及表面测量装置，设置在所述卡盘下方，用于选择性地测量所述基板的后部处的所述基板的金属污染。在操作中，将基板装载到卡盘上，通过识别形成在基板上的图案来获得要测量的基板的一部分的位置数据，然后根据位置数据移动基板，以测量基板的后部衬底和金属污染物在衬底的后部被选择性地测量。

7. 发明授权

US06816029B2 RF matching unit 有权
标题翻译：射频匹配单元
公开(公告)号：US06816029B2
公开(公告)日：2004-11-09
申请号：US09935582
申请日：2001-08-24
申请人： Dae-Kyu Choi , Young-Min Min , Sang-Mun Chon , Yun-Sik Yang , Jin-Man Kim
发明人： Dae-Kyu Choi , Young-Min Min , Sang-Mun Chon , Yun-Sik Yang , Jin-Man Kim
IPC分类号： H03H738
CPC分类号： H01J37/32082 , H01F2021/125 , H01J37/32183
摘要： An apparatus for matching the impedance of an RF generator to the impedance of an RF load, for use in manufacturing semiconductor devices by using a plasma. The apparatus includes a variable inductor coupled to a variable capacitor and an invariable capacitor, the variable inductor having two inductors coupled electrically with each other in series and disposed adjacent to each other. At least one of the two inductors is disposed movably to make the magnetic flux of the one inductor interfere with the magnetic flux of the other inductor, thereby to control the inductance of the variable inductor. In the case of a plasma enhanced semiconductor wafer processing system, the apparatus can reduce the time necessary to achieve an RF match between the RF generator and the RF load, thereby increasing the life of the apparatus.
摘要翻译：一种用于将RF发生器的阻抗与RF负载的阻抗相匹配的装置，用于通过使用等离子体制造半导体器件。该装置包括耦合到可变电容器和不变电容器的可变电感器，该可变电感器具有串联并彼此相邻布置的彼此电耦合的两个电感器。两个电感器中的至少一个被可移动地设置，以使一个电感器的磁通量与另一个电感器的磁通量相互干扰，从而控制可变电感器的电感。在等离子体增强半导体晶片处理系统的情况下，该装置可以减少在RF发生器和RF负载之间实现RF匹配所需的时间，从而延长设备的使用寿命。

8. 发明授权

US07433032B2 Method and apparatus for inspecting defects in multiple regions with different parameters 有权
标题翻译：用于检查具有不同参数的多个区域中的缺陷的方法和装置
公开(公告)号：US07433032B2
公开(公告)日：2008-10-07
申请号：US11253028
申请日：2005-10-17
申请人： Joung-Soo Kim , Sang-Mun Chon , Chung-Sam Jun , Yu-Sin Yang
发明人： Joung-Soo Kim , Sang-Mun Chon , Chung-Sam Jun , Yu-Sin Yang
IPC分类号： G01B15/00 , G01N21/00
CPC分类号： G01N21/95607 , G01N21/21 , G01N21/47
摘要： In a method of inspecting defects, a first actual region of an actual object is inspected based on a first characteristic parameter as an inspection condition. A point where an inspection region of the actual object is changed into a second actual region from the first actual region is determined. The second actual region is then inspected based on a second characteristic parameter as the inspection condition. The first and second parameters may include contrast of a light that is reflected from a reference object, intensity of the light, brightness of the light, a size of a minute structure on the reference object, etc. The characteristic parameters of each reference region on the reference object are set. Thus, the defects may be accurately classified so that a time and a cost for reviewing the defects may be markedly reduced.
摘要翻译：在检查缺陷的方法中，基于作为检查条件的第一特征参数来检查实际物体的第一实际区域。确定实际物体的检查区域从第一实际区域变为第二实际区域的点。然后基于作为检查条件的第二特征参数检查第二实际区域。第一和第二参数可以包括从参考对象反射的光的对比度，光的强度，光的亮度，参考对象上的微小结构的大小等。每个参考区域的特征参数在参考对象被设置。因此，可以将缺陷精确地分类，从而可以显着降低检查缺陷的时间和成本。

9. 发明申请

US20070292628A1 Method of Forming Metal Oxide Using an Atomic Layer Deposition Process 有权
标题翻译：使用原子层沉积法形成金属氧化物的方法
公开(公告)号：US20070292628A1
公开(公告)日：2007-12-20
申请号：US11770140
申请日：2007-06-28
申请人： Jung-Ho Lee , Jung-Sik Chol , Jun-Hyun Cho , Sang-Mun Chon
发明人： Jung-Ho Lee , Jung-Sik Chol , Jun-Hyun Cho , Sang-Mun Chon
IPC分类号： H01L21/30
CPC分类号： H01L21/0228 , C23C16/40 , C23C16/45553 , H01L21/02164 , H01L21/02181 , H01L21/02186 , H01L21/02274 , H01L21/3141 , H01L21/31604 , H01L21/31608 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645
摘要： In a method of forming a metal oxide, an organic metal compound represented by the following chemical formula is introduced into a chamber to chemisorb the organic metal compound onto a substrate, M[L1]x[L2]y where M represents a metal, L1 and L2 respectively represents a first and second ligands. In addition, x and y are independently integers and a value of (x+y) is 3 to 5. An oxygen-containing compound is introduced into the chamber to form the metal oxide. The metal oxide is formed by reacting an oxygen of the oxygen-containing compound with the metal, and separating the ligand from the metal. Thus, the metal oxide having a superior step coverage and a high dielectric constant may be formed using the organic metal compound by an atomic layer deposition process.
摘要翻译：在形成金属氧化物的方法中，将由以下化学式表示的有机金属化合物引入室中以将有机金属化合物化学吸附到基材上，<？在线配方描述=“在线配方”末端 =“lead”？> M [L1] x [L2] y <？in-line-formula description =“In-line Formulas”end =“tail”？>其中M表示金属，L 1和L 2分别表示第一和第二配体。此外，x和y独立地为整数，（x + y）的值为3〜5。将含氧化合物引入室中以形成金属氧化物。通过使含氧化合物的氧与金属反应并将配体与金属分离而形成金属氧化物。因此，可以通过原子层沉积工艺使用有机金属化合物形成具有优异的台阶覆盖率和高介电常数的金属氧化物。

10. 发明授权

US07271890B2 Method and apparatus for inspecting defects 失效
标题翻译：检查缺陷的方法和装置
公开(公告)号：US07271890B2
公开(公告)日：2007-09-18
申请号：US10903852
申请日：2004-07-30
申请人： Joung-Soo Kim , Yu-Sin Yang , Moon-Kyung Kim , Sang-Mun Chon , Sun-Yong Choi , Chung-Sam Jun
发明人： Joung-Soo Kim , Yu-Sin Yang , Moon-Kyung Kim , Sang-Mun Chon , Sun-Yong Choi , Chung-Sam Jun
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/55
摘要： In a method for inspecting a defect in accordance with one aspect of the present invention, an object is divided into a plurality of regions. Reflectivity of each of the plurality of regions is obtained. Amplification ratio for each region is determined using the reflectivity. A light is irradiated onto the regions. A light reflected from a first region is amplified by a first amplification ratio that is determined for the first region. Moving the irradiated light from the first region to a second region is detected. A light reflected from the second region is amplified by a second amplification ratio that is determined for the second region. The amplified lights from the first region and the second region are analyzed to determine an existence of a defect on the object.
摘要翻译：在根据本发明的一个方面的用于检查缺陷的方法中，对象被分成多个区域。获得多个区域中的每一个的反射率。使用反射率确定每个区域的放大率。光照射到这些区域上。从第一区域反射的光被第一区域确定的第一放大率放大。检测到将照射的光从第一区域移动到第二区域。从第二区域反射的光被第二区域确定的第二放大率放大。分析来自第一区域和第二区域的放大的光以确定物体上存在缺陷。

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