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1. 发明申请

US20160097513A1 BROADBAND LIGHT SOURCE AND OPTICAL INSPECTOR HAVING THE SAME 有权
标题翻译：宽光源光源和具有该光源的光学检测器
公开(公告)号：US20160097513A1
公开(公告)日：2016-04-07
申请号：US14872228
申请日：2015-10-01
申请人： Sung-Yoon RYU , Woo-Seok KO , Yu-Sin YANG , Sang-Kil LEE , Chung-Sam JUN , Seong-Jin YUN
发明人： Sung-Yoon RYU , Woo-Seok KO , Yu-Sin YANG , Sang-Kil LEE , Chung-Sam JUN , Seong-Jin YUN
IPC分类号： F21V7/04 , H01S3/00 , F21V7/08
CPC分类号： H01S3/0071 , G01N21/8806 , G01N21/956
摘要： A broadband light source includes a first electrodeless lamp to generate first broadband light from plasma, a first elliptical reflector having first and second focuses, the first elliptical reflector enclosing a rear portion of the first electrodeless lamp positioned at the first focus of the first elliptical reflector such that the first broadband light is reflected from the first elliptical reflector toward a light collector as a collective light, a symmetrically curved reflector having a third focus, the symmetrically curved reflector positioned such that the third focus is coincident with one of the first and second focuses, and a laser irradiator to provide a laser beam to the first electrodeless lamp.
摘要翻译：宽带光源包括第一无电极灯以产生来自等离子体的第一宽带光，具有第一和第二焦点的第一椭圆形反射器，第一椭圆形反射器包围位于第一椭圆形反射器的第一焦点处的第一无电极灯的后部使得第一宽带光从第一椭圆形反射器朝向聚光器反射，作为集体光，具有第三焦点的对称弯曲反射器，对称弯曲的反射器被定位成使得第三焦点与第一和第二光焦度中的一个重合焦点和激光照射器，以向第一无电极灯提供激光束。

2. 发明申请

US20160013109A1 OVERLAY MEASURING METHOD AND SYSTEM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME 有权
标题翻译：重叠测量方法和系统以及使用其制造半导体器件的方法
公开(公告)号：US20160013109A1
公开(公告)日：2016-01-14
申请号：US14796478
申请日：2015-07-10
申请人： Seong-Jin YUN , Woo-Seok KO , Yu-Sin YANG , Sang-Kil LEE , Chung-Sam JUN
发明人： Seong-Jin YUN , Woo-Seok KO , Yu-Sin YANG , Sang-Kil LEE , Chung-Sam JUN
IPC分类号： H01L21/66 , H01J37/26
CPC分类号： H01L22/20 , H01J37/222 , H01J2237/221 , H01J2237/2617 , H01J2237/2817
摘要： An overlay measuring method includes irradiating an electron beam onto a sample, including a multi-layered structure of overlapped upper and lower patterns formed thereon, to obtain an actual image of the upper and lower patterns. A first image representing the upper pattern and a second image representing the lower pattern are obtained from the actual image. A reference position for the upper and lower patterns is determined from a design image of the upper and lower patterns. A position deviation of the upper pattern with respect to the reference position in the first image and a position deviation of the lower pattern with respect to the reference position in the second image are calculated to determine an overlay between the upper pattern and the lower pattern.
摘要翻译：覆盖测量方法包括将电子束照射到样品上，包括形成在其上的重叠的上下图案的多层结构，以获得上下图案的实际图像。从实际图像中获得代表上部图案的第一图像和表示较低图案的第二图像。根据上下图案的设计图像确定上下图案的参考位置。计算上部图形相对于第一图像中的基准位置的位置偏差和下部图形相对于第二图像中的基准位置的位置偏差，以确定上部图案和下部图案之间的叠加。

3. 发明授权

US08050488B2 Method of analyzing a wafer sample 失效
标题翻译：分析晶圆样品的方法
公开(公告)号：US08050488B2
公开(公告)日：2011-11-01
申请号：US12041127
申请日：2008-03-03
申请人： Jong-An Kim , Yu-Sin Yang , Chung-Sam Jun , Moon-Shik Kang , Ji-Hye Kim
发明人： Jong-An Kim , Yu-Sin Yang , Chung-Sam Jun , Moon-Shik Kang , Ji-Hye Kim
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G01N21/95607 , G06T2207/10061 , G06T2207/30148
摘要： In a method of analyzing a wafer sample, a first defect of a photoresist pattern on the wafer sample having shot regions exposed with related exposure conditions is detected. A first portion of the pattern includes the shot regions exposed with an exposure condition corresponding to a reference exposure condition and a tolerance error range of the reference exposure condition. The first defect repeatedly existing in at least two of the shot regions in a second portion of the pattern is set up as a second defect of the pattern. A first reference image displaying the second defect is obtained. The first defect of the shot regions in the first portion corresponding to the second defect is set up as a third defect corresponding to weak points of the pattern. The exposure conditions of the shot region having no weak points are set up as an exposure margin of an exposure process.
摘要翻译：在分析晶片样品的方法中，检测具有用相关曝光条件曝光的拍摄区域的晶片样品上的光致抗蚀剂图案的第一缺陷。图案的第一部分包括用与参考曝光条件相对应的曝光条件和参考曝光条件的公差误差范围曝光的拍摄区域。在图案的第二部分中的至少两个拍摄区域中重复存在的第一缺陷被设置为图案的第二缺陷。获得显示第二缺陷的第一参考图像。对应于第二缺陷的第一部分中的拍摄区域的第一缺陷被设置为对应于图案的弱点的第三缺陷。没有弱点的照射区域的曝光条件被设置为曝光处理的曝光余量。

4. 发明授权

US08034641B2 Method for inspection of defects on a substrate 有权
标题翻译：检查基板上的缺陷的方法
公开(公告)号：US08034641B2
公开(公告)日：2011-10-11
申请号：US12911190
申请日：2010-10-25
申请人： Woo-seok Ko , Chung-sam Jun , Hyung-su Son , Yu-sin Yang
发明人： Woo-seok Ko , Chung-sam Jun , Hyung-su Son , Yu-sin Yang
IPC分类号： H01L21/66
CPC分类号： G01Q60/30 , H01L22/12 , H01L22/14
摘要： A method for inspection of defects on a substrate includes positioning a probe of a scanning probe microscopy (SPM) over and spaced apart from a substrate, includes scanning the substrate by changing a relative position of the probe with respect to the substrate on a plane spaced apart from and parallel to the substrate, and includes measuring a value of an induced current generated via the probe in at least two different regions of the substrate. The value of the induced current is variable according to at least a shape and a material of the substrate. The method further includes determining whether a defect exists by comparing the values of the induced currents measured in the at least two different regions of the substrate.
摘要翻译：一种用于检查衬底上的缺陷的方法，包括将扫描探针显微镜（SPM）的探针定位在衬底之上并与衬底间隔开的步骤，包括通过在相隔的平面上改变探针相对于衬底的相对位置来扫描衬底除了并且平行于衬底，并且包括测量在衬底的至少两个不同区域中经由探针产生的感应电流的值。感应电流的值根据至少衬底的形状和材料是可变的。该方法还包括通过比较在衬底的至少两个不同区域中测量的感应电流的值来确定是否存在缺陷。

5. 发明申请

US20100156446A1 METHOD OF INSPECTING A SUBSTRATE 审中-公开
标题翻译：检查基板的方法
公开(公告)号：US20100156446A1
公开(公告)日：2010-06-24
申请号：US12641918
申请日：2009-12-18
申请人： Chun-Yong KIM , Mi-Ra Park , Yun-Jung Jee , Chung-Sam Jun
发明人： Chun-Yong KIM , Mi-Ra Park , Yun-Jung Jee , Chung-Sam Jun
IPC分类号： G01R31/02 , G01R31/26
CPC分类号： H01L22/20 , H01L22/14
摘要： A method of inspecting a substrate includes measuring a first current flowing between a first region and a second region of the substrate using a first probe. A second current flowing between the first region and the second region of the substrate may be measured using a second probe including a material different from that of the first probe. By comparing the first and second currents, it can be determined whether there is a change in a physical composition of the substrate and a change in a physical configuration of the substrate between the first region and the second region. Thus, when the current change is induced by the change in a physical configuration of the substrate, a determination error that the contaminants on the semiconductor substrate may exist based on the current change may be prevented.
摘要翻译：检查衬底的方法包括使用第一探针来测量在衬底的第一区域和第二区域之间流动的第一电流。可以使用包括不同于第一探针的材料的第二探针来测量在衬底的第一区域和第二区域之间流动的第二电流。通过比较第一和第二电流，可以确定衬底的物理组成是否存在变化以及衬底在第一区域和第二区域之间的物理结构的变化。因此，当通过基板的物理结构的变化引起电流变化时，可以防止基于电流变化存在半导体衬底上的污染物的确定误差。

6. 发明申请

US20090238445A1 Method of detecting a defect on an object 有权
标题翻译：检测物体上的缺陷的方法
公开(公告)号：US20090238445A1
公开(公告)日：2009-09-24
申请号：US12383017
申请日：2009-03-19
申请人： Yu-Sin Yang , Kyung-Suk Song , Ji-Hae Kim , Chung-Sam Jun
发明人： Yu-Sin Yang , Kyung-Suk Song , Ji-Hae Kim , Chung-Sam Jun
IPC分类号： G06K9/00
CPC分类号： G06T7/0004 , G06T2207/30148
摘要： In a method of detecting a defect on an object, a preliminary reference image can be obtained from a plurality of comparison regions defined on the object. The preliminary reference image is divided into reference zones by a similar brightness. Each of the reference zones is provided with substantially the same gray level, respectively, to obtain a reference image. Whether a defect exists in an inspection region in the comparison regions is determined using the reference image. Thus, defects in the inspection regions having different brightnesses can be detected using the properly obtained reference image.
摘要翻译：在检测物体上的缺陷的方法中，可以从对象上定义的多个比较区域中获得初步参考图像。初步参考图像以相似的亮度分为参考区域。每个参考区分别具有基本上相同的灰度级，以获得参考图像。使用参考图像确定在比较区域中的检查区域中是否存在缺陷。因此，可以使用适当地获得的参考图像来检测具有不同亮度的检查区域中的缺陷。

7. 发明授权

US07573568B2 Method and apparatus for detecting a photolithography processing error, and method and apparatus for monitoring a photolithography process 有权
标题翻译：用于检测光刻处理误差的方法和装置，以及用于监测光刻工艺的方法和装置
公开(公告)号：US07573568B2
公开(公告)日：2009-08-11
申请号：US10909238
申请日：2004-07-30
申请人： Yu-Sin Yang , Chung-Sam Jun , Sang-Mun Chon , Sun-Yong Choi
发明人： Yu-Sin Yang , Chung-Sam Jun , Sang-Mun Chon , Sun-Yong Choi
IPC分类号： G01N21/00
CPC分类号： G03F7/70608 , G03F7/70616
摘要： An apparatus for monitoring a photolithography process includes a measurer and a data processor. The measurer measures an optical characteristic of a substrate. The data processor determines defectiveness of the substrate based on the optical the measurer.
摘要翻译：用于监测光刻工艺的装置包括测量器和数据处理器。测量器测量衬底的光学特性。数据处理器基于光学测量器来确定衬底的缺陷。

8. 发明授权

US07426031B2 Method and apparatus for inspecting target defects on a wafer 有权
标题翻译：用于检查晶片上的目标缺陷的方法和装置
公开(公告)号：US07426031B2
公开(公告)日：2008-09-16
申请号：US11461726
申请日：2006-08-01
申请人： Moon-Kyung Kim , Chung-Sam Jun , Yu-Sin Yang
发明人： Moon-Kyung Kim , Chung-Sam Jun , Yu-Sin Yang
IPC分类号： G01B9/08 , G01N21/00
CPC分类号： G01N21/9501
摘要： A defect inspecting apparatus includes a first support unit supporting a standard sample having standard defects, a second support unit supporting a wafer having target defects, a light source irradiating an incident light to the standard sample or the wafer, a light receiving part collecting reflection light reflected from the standard sample and the wafer, a detection part detecting the standard defects and the target defects by using the reflection light, a comparing part comparing information obtained using the reflection light reflected from the standard sample with a predetermined standard information of the standard defects to confirm a reliability of a step for detecting the target defects and a determination portion determining whether the step is allowed to be performed or not.
摘要翻译：缺陷检查装置包括支撑具有标准缺陷的标准样品的第一支撑单元，支撑具有目标缺陷的晶片的第二支撑单元，向标准样品或晶片照射入射光的光源，收集反射光的光接收部从标准样品和晶片反射的检测部分，通过使用反射光检测标准缺陷和目标缺陷的检测部分，将使用从标准样品反射的反射光获得的信息与标准缺陷的预定标准信息进行比较的比较部分以确认用于检测目标缺陷的步骤的可靠性，并且确定部分确定是否允许执行该步骤。

9. 发明授权

US07405817B2 Method and apparatus for classifying defects of an object 有权
标题翻译：用于分类物体缺陷的方法和装置
公开(公告)号：US07405817B2
公开(公告)日：2008-07-29
申请号：US10786137
申请日：2004-02-26
申请人： Pil-Sik Hyun , Sun-Yong Choi , Sang-Kil Lee , Chung-Sam Jun , Sang-Min Kim
发明人： Pil-Sik Hyun , Sun-Yong Choi , Sang-Kil Lee , Chung-Sam Jun , Sang-Min Kim
IPC分类号： G01N21/00 , G01J4/00
CPC分类号： G01N21/956 , G01N21/9501
摘要： A method for classifying defects of an object includes irradiating lights having different polarizations onto the object to create an inspection spot on the object, collecting scattered lights generated by the irradiated lights scattering from the inspection spot, and classifying defects of the object by type of defect by analyzing the scattered lights. An apparatus for classifying defects of an object includes light creating means emitting lights having different polarizations to create an inspection spot on the object, and a detecting member for collecting scattered lights that are created from the lights scattering from the inspection spot, wherein the scattered lights are analyzed and classified in accordance with defects positioned on the inspection spot of the object.
摘要翻译：用于对物体的缺陷进行分类的方法包括将具有不同极化的光照射到物体上以在物体上产生检查点，收集由检查点散射的照射光产生的散射光，并根据缺陷类型对物体的缺陷进行分类通过分析散射光。用于对物体的缺陷进行分类的装置包括发光装置，其发射具有不同偏振度的光以在物体上产生检查点;以及检测部件，用于收集从检查点散射的光产生的散射光，其中散射光根据位于物体检查点的缺陷进行分析和分类。

10. 发明授权

US07394279B2 Method of measuring a surface voltage of an insulating layer 失效
标题翻译：测量绝缘层的表面电压的方法
公开(公告)号：US07394279B2
公开(公告)日：2008-07-01
申请号：US11461312
申请日：2006-07-31
申请人： Mi-Sung Lee , Yu-Sin Yang , Chung-Sam Jun , Byung-Sug Lee
发明人： Mi-Sung Lee , Yu-Sin Yang , Chung-Sam Jun , Byung-Sug Lee
IPC分类号： G01R31/26 , G01R19/00 , G01R31/08
CPC分类号： G01R31/2648 , G01R29/12 , G01R31/2656
摘要： In a method of measuring a surface voltage of an insulating layer, the number of times that surface voltages are measured in a depletion region increases so that precise data about the depletion region may be obtained. The number of times that the surface voltages are measured in an accumulation region and an inversion region decreases so that the data about the depletion region may be rapidly obtained.
摘要翻译：在测量绝缘层的表面电压的方法中，在耗尽区中测量表面电压的次数增加，从而可以获得关于耗尽区的精确数据。在积累区域和反转区域中测量表面电压的次数减少，从而可以快速获得关于耗尽区域的数据。

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