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    • 4. 发明申请
    • Apparatus for monitoring a density profile of impurities
    • 用于监测杂质密度分布的装置
    • US20070222999A1
    • 2007-09-27
    • US11710579
    • 2007-02-26
    • Yun-Jung LeeSun-Yong ChoiChung-Sam JunKwan-Woo Ryu
    • Yun-Jung LeeSun-Yong ChoiChung-Sam JunKwan-Woo Ryu
    • G01R31/26
    • G01N21/9501
    • A method of monitoring a density profile of impurities, the method including presetting a monitoring position of a thin layer coated on a substrate, the density profile of impurities being monitored from the monitoring position in a direction of thickness of the thin layer, moving an exposer for exposing a local area of the thin layer to the monitoring position, exposing the local area of the thin layer along the direction of thickness of the thin layer, forming a shape profile of the exposed local area of the thin layer, and monitoring the density profile of impurities by determining a density of impurities in accordance with the shape profile, and an apparatus therefor. The impurity density profile may be monitored without destroying a substrate on which a thin layer is coated, and an amount of impurities used for forming the thin layer may be monitored and controlled in real-time.
    • 一种监测杂质浓度分布的方法,该方法包括:预先设置涂覆在基材上的薄层的监测位置,从监测位置监测的杂质的浓度分布沿薄层厚度方向移动,移动曝光器 用于将薄层的局部区域暴露于监测位置,使薄层的局部区域沿着薄层的厚度方向暴露,形成薄层暴露局部区域的形状轮廓,并监测密度 通过根据形状轮廓确定杂质的密度来描述杂质,及其装置。 可以监测杂质浓度分布,而不会破坏其上涂覆有薄层的基底,并且可以实时监测和控制用于形成薄层的杂质的量。
    • 5. 发明授权
    • Method for monitoring a density profile of impurities
    • 监测杂质浓度分布的方法
    • US07186577B2
    • 2007-03-06
    • US10787772
    • 2004-02-27
    • Yun-Jung JeeSun-Yong ChoiChung-Sam JunKwan-Woo Ryu
    • Yun-Jung JeeSun-Yong ChoiChung-Sam JunKwan-Woo Ryu
    • H01L21/66
    • G01N21/9501
    • A method of monitoring a density profile of impurities, the method including presetting a monitoring position of a thin layer coated on a substrate, the density profile of impurities being monitored from the monitoring position in a direction of thickness of the thin layer, moving an exposer for exposing a local area of the thin layer to the monitoring position, exposing the local area of the thin layer along the direction of thickness of the thin layer, forming a shape profile of the exposed local area of the thin layer, and monitoring the density profile of impurities by determining a density of impurities in accordance with the shape profile, and an apparatus therefor. The impurity density profile may be monitored without destroying a substrate on which a thin layer is coated, and an amount of impurities used for forming the thin layer may be monitored and controlled in real-time.
    • 一种监测杂质浓度分布的方法,该方法包括:预先设置涂覆在基材上的薄层的监测位置,从监测位置监测的杂质的浓度分布沿薄层厚度方向移动,移动曝光器 用于将薄层的局部区域暴露于监测位置,使薄层的局部区域沿着薄层的厚度方向暴露,形成薄层暴露局部区域的形状轮廓,并监测密度 通过根据形状轮廓确定杂质的密度来描述杂质,及其装置。 可以监测杂质浓度分布,而不会破坏其上涂覆有薄层的基底,并且可以实时监测和控制用于形成薄层的杂质的量。