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1. 发明申请

US20160293600A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20160293600A1
公开(公告)日：2016-10-06
申请号：US14995511
申请日：2016-01-14
申请人： Jung-Gun YOU , Hyung-Jong LEE , Chong-Kwang CHANG , Sung-Min KIM
发明人： Jung-Gun YOU , Hyung-Jong LEE , Chong-Kwang CHANG , Sung-Min KIM
IPC分类号： H01L27/088 , H01L27/02 , H01L23/535 , H01L29/06
CPC分类号： H01L27/0886 , H01L21/823431 , H01L21/823475 , H01L21/823814 , H01L21/823821 , H01L21/823871 , H01L23/485 , H01L27/0207 , H01L27/0924 , H01L29/0649 , H01L29/41791 , H01L29/7854
摘要： A semiconductor device, including a first fin type pattern and a second fin type pattern defined by a trench, the first fin type pattern and the second fin type pattern extending in a first direction, the first fin type pattern and the second fin type pattern being closest to each other; a field insulation layer filling a portion of the trench; and a contact contacting the field insulation layer, the first fin type pattern, and the second fin type pattern, the contact having a bottom surface in a shape of a wave.
摘要翻译：一种半导体器件，包括由沟槽限定的第一鳍式图案和第二鳍型图案，所述第一鳍型图案和所述第二鳍片图案沿第一方向延伸，所述第一鳍片型图案和所述第二鳍片图案为最接近; 填充所述沟槽的一部分的场绝缘层; 以及与场绝缘层，第一鳍式图案和第二鳍型图案接触的接触件，该接触件具有波形形状的底面。

2. 发明申请

US20070126949A1 DISPLAY DEVICE 审中-公开
标题翻译：显示设备
公开(公告)号：US20070126949A1
公开(公告)日：2007-06-07
申请号：US11565845
申请日：2006-12-01
申请人： Sung-Min KIM , Jeong-Seok OH , Jeung-Soo KIM
发明人： Sung-Min KIM , Jeong-Seok OH , Jeung-Soo KIM
IPC分类号： G02F1/1335
CPC分类号： G02F1/133615 , G02F1/133603 , G02F2001/133342 , G02F2001/133616 , H04M1/22
摘要： A display device includes a display panel, a first light unit, a second light unit, a first buffer member and a second buffer member. The display panel is disposed between the first and second light units, and displays an image. The first light unit is disposed on a first side of the display panel and supplies light to the display panel. The second light unit is disposed on a second side opposite to the first side of the display panel and supplies light to the display panel. The first buffer member is disposed between the display panel and the first light unit. The second buffer member is disposed between the display panel and the second light unit. Thus, a light guide plate included in each of the light units is substituted for a conventional window to reduce a thickness of the display device.
摘要翻译：显示装置包括显示面板，第一光单元，第二光单元，第一缓冲构件和第二缓冲构件。显示面板设置在第一和第二光单元之间，并且显示图像。第一光单元设置在显示面板的第一侧上，并将光提供给显示面板。第二光单元设置在与显示面板的第一侧相对的第二侧上，并将光提供给显示面板。第一缓冲构件设置在显示面板和第一光单元之间。第二缓冲构件设置在显示面板和第二光单元之间。因此，包括在每个光单元中的导光板代替常规窗口以减小显示装置的厚度。

3. 发明申请

US20090073048A1 Broadband internal antenna combined with monopole antenna and loop antenna 有权
标题翻译：宽带内部天线结合单极天线和环形天线
公开(公告)号：US20090073048A1
公开(公告)日：2009-03-19
申请号：US12073626
申请日：2008-03-07
申请人： Sung-Min KIM
发明人： Sung-Min KIM
IPC分类号： H01Q9/04
CPC分类号： H01Q7/00 , H01Q1/243 , H01Q9/30 , H01Q9/40 , H01Q9/42
摘要： Provided is a broadband internal antenna including a ground plate and an antenna unit. The antenna unit can include a feed point; a first radiator, formed with a bar shape having the feed point as one end part and the other end part from which an uncurved ‘C’ shape is extended; a ground point, connected to the ground plate; a second radiator, having one end part on which the ground point is mounted and the other end part that is connected to an area from which the uncurved ‘C’ shape of the first radiator starts to be formed in an open loop form; a first protrusion part, protruded from the uncurved ‘C’ shape of the first radiator to be formed in a closed loop form; and a second protrusion part, formed inside the open loop shape of the first radiator in an inverse L’ form.
摘要翻译：提供了包括接地板和天线单元的宽带内部天线。天线单元可以包括馈电点; 第一散热器，其形成为具有作为一端部的供给点的杆状，另一端部从未被弯曲的“C”形延伸; 接地点，连接到接地板; 第二散热器，具有安装接地点的一个端部，并且连接到以开环形式开始形成第一辐射体的未弯曲的'C'形状的区域的另一端部; 第一突起部，从第一散热器的未弯曲的C形突出，形成为闭环形式; 以及第二突起部，以相反的L'形状形成在第一辐射体的开环形状内部。

4. 发明申请

US20080145989A1 SEMICONDUCTOR DEVICE HAVING PARTIALLY INSULATED FIELD EFFECT TRANSISTOR (PiFET) AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：具有部分绝缘场效应晶体管（PiFET）的半导体器件及其制造方法
公开(公告)号：US20080145989A1
公开(公告)日：2008-06-19
申请号：US12040636
申请日：2008-02-29
申请人： Chang-Woo OH , Dong-Gun PARK , Jeong-Dong CHOE , Min-Sang KIM , Sung-Min KIM
发明人： Chang-Woo OH , Dong-Gun PARK , Jeong-Dong CHOE , Min-Sang KIM , Sung-Min KIM
IPC分类号： H01L29/06
CPC分类号： H01L21/823481 , H01L21/76283 , H01L29/1079 , H01L29/78
摘要： Embodiments of the invention include a partially insulated field effect transistor and a method of fabricating the same. According to some embodiments, a semiconductor substrate is formed by sequentially stacking a bottom semiconductor layer, a sacrificial layer, and a top semiconductor layer. The sacrificial layer may be removed to form a buried gap region between the bottom semiconductor layer and the top semiconductor layer. Then, a transistor may be formed on the semiconductor substrate. The sacrificial layer may be a crystalline semiconductor formed by an epitaxial growth technology.
摘要翻译：本发明的实施例包括部分绝缘的场效应晶体管及其制造方法。根据一些实施例，通过顺序堆叠底部半导体层，牺牲层和顶部半导体层来形成半导体衬底。可以去除牺牲层以在底部半导体层和顶部半导体层之间形成掩埋间隙区域。然后，可以在半导体衬底上形成晶体管。牺牲层可以是通过外延生长技术形成的晶体半导体。

5. 发明申请

US20080036001A1 SEMICONDUCTOR DEVICES HAVING FIELD EFFECT TRANSISTORS 有权
标题翻译：具有场效应晶体管的半导体器件
公开(公告)号：US20080036001A1
公开(公告)日：2008-02-14
申请号：US11832589
申请日：2007-08-01
申请人： Eun-Jung YUN , Hye-Jin CHO , Dong-Won KIM , Sung-Min KIM
发明人： Eun-Jung YUN , Hye-Jin CHO , Dong-Won KIM , Sung-Min KIM
IPC分类号： H01L27/01 , H01L21/336
CPC分类号： H01L29/785 , H01L21/823437 , H01L29/42384 , H01L29/42392 , H01L29/66545 , H01L29/66795
摘要： A semiconductor device having a field effect transistor and a method of fabricating the same. In-situ doped epitaxial patterns are respectively formed at both sidewalls of a protruded channel pattern from a substrate by performing an in-situ doped epitaxial growth process. The in-situ doped epitaxial pattern has a conformal impurity concentration throughout. Accordingly, source/drain regions with a conformal impurity concentration are connected throughout a channel width of a channel region including both sidewalls of a protruded channel pattern. As a result, it is possible to maximize a driving current of the filed effect transistor, and an on-off characteristic can be highly stabilized.
摘要翻译：一种具有场效应晶体管的半导体器件及其制造方法。通过进行原位掺杂的外延生长工艺，从衬底分别在突出沟道图案的两个侧壁处形成原位掺杂的外延图案。原位掺杂的外延图案贯穿整个杂质浓度。因此，具有共形杂质浓度的源极/漏极区域贯穿包括突出沟道图案的两个侧壁的沟道区域的沟道宽度。结果，可以使场效应晶体管的驱动电流最大化，并且开 - 关特性可以高度稳定。

6. 发明申请

US20160336234A1 SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME 有权
标题翻译：半导体器件及其形成方法
公开(公告)号：US20160336234A1
公开(公告)日：2016-11-17
申请号：US15061200
申请日：2016-03-04
申请人： Sung-Min KIM , Sunhom Steve PAAK , Heon-Jong SHIN , Dong-Ho CHA
发明人： Sung-Min KIM , Sunhom Steve PAAK , Heon-Jong SHIN , Dong-Ho CHA
IPC分类号： H01L21/8234 , H01L21/02
CPC分类号： H01L21/823431 , H01L21/823481
摘要： Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.
摘要翻译：提供了形成半导体器件的半导体器件和方法。所述方法可以包括形成翅片，在翅片的侧面上形成第一器件隔离层，形成延伸穿过第一器件隔离层的第二器件隔离层，形成穿过翅片的第一和第二栅极并形成第三器件隔离层在第一和第二个门之间。第一器件隔离层可以包括第一材料和第一深度处的最下表面。第二装置隔离层可以包括第二材料和在比第一深度大的第二深度的最下表面。第三装置隔离层可以延伸到翅片中，可以包括在比第一深度小的第三深度处的最下表面和不同于第一和第二材料的第三材料。

7. 发明申请

US20100046844A1 METHOD FOR PROVIDING REAL-TIME SERVICE OF HUGE AND HIGH QUALITY DIGITAL IMAGE ON INTERNET 有权
标题翻译：提供互联网上高质量数字图像实时服务的方法
公开(公告)号：US20100046844A1
公开(公告)日：2010-02-25
申请号：US12613818
申请日：2009-11-06
申请人： Sung-Min KIM
发明人： Sung-Min KIM
IPC分类号： G06K9/54
CPC分类号： G06Q30/0277 , G06F17/3028 , G06F17/30902 , G06Q30/02 , G06T3/40 , G06T5/20 , G06T9/00 , G06T2207/20021 , H04N19/119 , H04N19/176 , H04N19/85
摘要： A method for providing real time service of huge and high quality digital image on internet is disclosed, wherein data relevant to a general life such as a general photo, an advertising leaflet, and a pamphlet and professional image data exhibited in an art gallery, exhibition grounds, a pavilion are made into huge and high quality digital image or scanned and photographed to be digital, thereby processing real time service as an interactive browsing form. In the present invention, data are directly made, edited, constructed, and uploaded on internet, thereby providing various additional information with image through hyperlink and processing high quality digital image service on network without speed delay for huge image.
摘要翻译：公开了一种在互联网上提供巨大和高质量数字图像的实时服务的方法，其中涉及一般生活的数据，例如一般照片，广告传单和小册子以及在艺术画廊展出的专业图像数据理由，一个亭子被制成巨大和高质量的数字图像或扫描和拍照为数字，从而作为交互式浏览形式处理实时服务。在本发明中，在因特网上直接制作，编辑，构造和上传数据，从而通过超链接提供各种附加信息，并且在网络上处理高质量的数字图像服务，而无需对巨大图像的速度延迟。

8. 发明申请

US20080062520A1 METHOD AND APPARATUS FOR FABRICATING PROTECTION MEMBER FOR DISPLAY APPARATUS, METHOD FOR FABRICATING DISPLAY APPARATUS INCLUDING THE SAME AND DISPLAY APPARATUS INCLUDING THE SAME 审中-公开
标题翻译：用于制造显示装置的保护构件的方法和装置，用于制造包括其的显示装置的方法和包括其的显示装置
公开(公告)号：US20080062520A1
公开(公告)日：2008-03-13
申请号：US11747557
申请日：2007-05-11
申请人： Byoung-Hun LEE , Ho-Min KANG , Hee-Young PARK , Seung-Jun LEE , Jeong-Ho HWANG , Sung-Min KIM , Sung-Taek CHOI , Ho-Jeong KANG , Jong-Sig HYUN
发明人： Byoung-Hun LEE , Ho-Min KANG , Hee-Young PARK , Seung-Jun LEE , Jeong-Ho HWANG , Sung-Min KIM , Sung-Taek CHOI , Ho-Jeong KANG , Jong-Sig HYUN
IPC分类号： G02B27/28
CPC分类号： G02F1/1333 , G02F2201/50 , Y10T29/53539
摘要： A method for fabricating a protection member for a display apparatus includes; vertically standing a protection panel with respect to a ground surface, disposing a protection cushion to stand vertically with respect to the ground surface and to face the protection panel, and attaching the protection cushion to the protection panel while the protection panel and the protection cushion remain vertically standing with respect to the ground surface.
摘要翻译：一种用于制造用于显示装置的保护构件的方法，包括：相对于地面垂直站立保护面板，将保护垫相对于地面垂直放置并面对保护面板，并将保护垫附接到保护面板，同时保护面板和保护垫保持不动相对于地表垂直站立。

9. 发明申请

US20070159575A1 PANEL ASSEMBLY AND DISPLAY DEVICE PROVIDED WITH THE SAME 有权
标题翻译：面板组装和显示设备提供
公开(公告)号：US20070159575A1
公开(公告)日：2007-07-12
申请号：US11538365
申请日：2006-10-03
申请人： Sung-Min KIM , Kyu-Seok Kim , Ho-Jung Lee
发明人： Sung-Min KIM , Kyu-Seok Kim , Ho-Jung Lee
IPC分类号： G02F1/1347
CPC分类号： G02F1/1333 , G02F2001/133342
摘要： The present invention relates to a display device having a panel assembly that includes first and second display panels arranged to face each other. The second display panel is smaller than the first display panel. The first display panel and the second display panel are divided into a front display area and a rear display area to display images on both sides of the panel assembly.
摘要翻译：本发明涉及一种具有面板组件的显示装置，该面板组件包括彼此面对的布置的第一和第二显示面板。第二显示面板小于第一显示面板。第一显示面板和第二显示面板被划分为前显示区域和后显示区域，以在面板组件的两侧上显示图像。

10. 发明申请

US20120154243A1 WIDEBAND SINGLE RESONANCE ANTENNA 有权
标题翻译：宽带单谐振天线
公开(公告)号：US20120154243A1
公开(公告)日：2012-06-21
申请号：US13325118
申请日：2011-12-14
申请人： Sung-Min KIM
发明人： Sung-Min KIM
IPC分类号： H01Q9/04 , H01Q1/50 , H01Q5/00
CPC分类号： H01Q1/243 , H01Q1/38 , H01Q5/378 , H01Q9/42
摘要： Wideband single resonance antenna. An antenna may include a first conductor unit and a second conductor unit. The first conductor unit may be configured to have one end electrically coupled to a power. The second conductor unit may be configured to have one end electrically coupled to a ground, to surround at least one side of the first conductor unit, and to be electrically separated from the first conductor unit.
摘要翻译：宽带单共振天线。天线可以包括第一导体单元和第二导体单元。第一导体单元可以被配置为具有电耦合到电力的一端。第二导体单元可以被配置为具有电耦合到地的一端，以围绕第一导体单元的至少一侧，并且与第一导体单元电隔离。

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