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    • 8. 发明授权
    • Semiconductor device with FinFET and method of fabricating the same
    • 具有FinFET的半导体器件及其制造方法
    • US07972914B2
    • 2011-07-05
    • US12477348
    • 2009-06-03
    • Sung-min KimMin-sang KimEun-jung Yun
    • Sung-min KimMin-sang KimEun-jung Yun
    • H01L21/338H01L21/336H01L21/3205
    • H01L29/785H01L29/42384H01L29/66795
    • A FinFET semiconductor device has an active region formed of a semiconductor substrate and projecting from a surface of the substrate. A fin having a first projection and a second projection composed of the active region are arranged in parallel and at each side of a central trench formed in a central portion of the active region. Upper surfaces and side surfaces of the first projection and the second projection comprise a channel region. A channel ion implantation layer is provided at a bottom of the central trench and at a lower portion of the fin. A gate oxide layer is provided on the fin. A gate electrode is provided on the gate oxide layer. A source region and a drain region are provided in the active region at sides of the gate electrode. A method of forming such a device is also provided.
    • FinFET半导体器件具有由半导体衬底形成并从衬底的表面突出的有源区。 具有第一突起和由有源区组成的第二突起的翅片平行布置在形成在有源区的中心部分的中心沟槽的每一侧。 第一突起和第二突起的上表面和侧表面包括通道区域。 通道离子注入层设置在中央沟槽的底部和鳍片的下部。 在鳍片上设置栅极氧化层。 栅电极设置在栅氧化层上。 源极区域和漏极区域设置在栅电极侧的有源区域中。 还提供了一种形成这种装置的方法。