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    • 1. 发明授权
    • Single-ended read and differential write scheme
    • 单端读和差分写入方案
    • US07813163B2
    • 2010-10-12
    • US12190680
    • 2008-08-13
    • Juergen PilleOtto WagnerSebastian EhrenreichRolf Sautter
    • Juergen PilleOtto WagnerSebastian EhrenreichRolf Sautter
    • G11C11/00
    • G11C11/413
    • A method to read and write at least one static memory cell is provided, said cell comprising a cross-coupled inverter pair and two pass-devices wherein said method is characterized in that during read only one of the two pass-devices is selected, while for write both pass-devices are selected. Furthermore, a circuit to read and write at least one static memory cell is described, said cell comprising a cross-coupled inverter pair and two pass-devices. Said circuit is characterized in that for each pass-device of the cell an individual wordline is connected with a gate of the particular pass-device, wherein both wordlines are selected for write and a single wordline is selected for read.
    • 提供了读取和写入至少一个静态存储单元的方法,所述单元包括交叉耦合的反相器对和两个通过器件,其中所述方法的特征在于,在只读选择两个通过器件中的一个的同时, 对于写入,选择了传递设备。 此外,描述了读取和写入至少一个静态存储器单元的电路,所述单元包括交叉耦合的反相器对和两个通过器件。 所述电路的特征在于,对于单元的每个通过器件,单个字线与特定通过器件的栅极连接,其中两个字线被选择用于写入,并且单个字线被选择用于读取。
    • 2. 发明申请
    • Single-ended read and differential write scheme
    • 单端读和差分写入方案
    • US20090059688A1
    • 2009-03-05
    • US12190680
    • 2008-08-13
    • Juergen PilleOtto WagnerSebastian EhrenreichRolf Sautter
    • Juergen PilleOtto WagnerSebastian EhrenreichRolf Sautter
    • G11C7/00G11C8/08
    • G11C11/413
    • A method to read and write at least one static memory cell is provided, said cell comprising a cross-coupled inverter pair and two pass-devices wherein said method is characterized in that during read only one of the two pass-devices is selected, while for write both pass-devices are selected. Furthermore, a circuit to read and write at least one static memory cell is described, said cell comprising a cross-coupled inverter pair and two pass-devices. Said circuit is characterized in that for each pass-device of the cell an individual wordline is connected with a gate of the particular pass-device, wherein both wordlines are selected for write and a single wordline is selected for read.
    • 提供了读取和写入至少一个静态存储单元的方法,所述单元包括交叉耦合的反相器对和两个通过器件,其中所述方法的特征在于,在只读选择两个通过器件中的一个的同时, 对于写入,选择了传递设备。 此外,描述了读取和写入至少一个静态存储器单元的电路,所述单元包括交叉耦合的反相器对和两个通过器件。 所述电路的特征在于,对于单元的每个通过器件,单个字线与特定通过器件的栅极连接,其中两个字线被选择用于写入,并且单个字线被选择用于读取。