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1. 发明申请

US20110300483A1 Self-Segregating Multilayer Imaging Stack With Built-In Antireflective Properties 审中-公开
标题翻译：具有内置抗反射特性的自分离多层成像叠层
公开(公告)号：US20110300483A1
公开(公告)日：2011-12-08
申请号：US13190252
申请日：2011-07-25
申请人： Joy Cheng , Dario L. Goldfarb , David R. Medeiros , Daniel P. Sanders , Dirk Pfeiffer , Libor Vyklicky
发明人： Joy Cheng , Dario L. Goldfarb , David R. Medeiros , Daniel P. Sanders , Dirk Pfeiffer , Libor Vyklicky
IPC分类号： G03F7/004 , G03F7/075
CPC分类号： G03F7/091 , G03F7/0752 , Y10S430/136 , Y10S438/952 , Y10T428/24802
摘要： A coating process comprises forming a patterned material layer on a substrate using a self-segregating polymeric composition comprising a polymeric photoresistive material and an antireflective coating material contained in a single solution. When depositing this solution on a substrate and removing the solvent, the two materials self-segregate into two layers. This produces a coated substrate having a uniaxial bilayer coating oriented in a direction orthogonal to the substrate with a top photoresistive coating layer and a bottom antireflective coating layer. Pattern-wise exposing the coated substrate to imaging radiation and contacting the coated substrate with a developer, produces the patterned material layer. Any optional top coat material and a portion of the photoresist layer can be simultaneously removed from the coated substrate to form a patterned photoresist layer on the substrate.
摘要翻译：涂覆方法包括使用包含聚合物光致抗蚀剂材料和包含在单一溶液中的抗反射涂层材料的自分离聚合物组合物在基材上形成图案化材料层。当将该溶液沉积在基材上并除去溶剂时，两种材料自分离成两层。这产生了具有单轴双层涂层的涂覆基材，该单轴双层涂层在垂直于基板的方向上具有顶部光刻胶涂层和底部抗反射涂层。将经涂覆的基底图案地曝光成成像辐射并使涂覆的基底与显影剂接触，产生图案化的材料层。任何可选的表面涂层材料和光致抗蚀剂层的一部分可以同时从涂覆的基底上移除，以在基底上形成图案化的光致抗蚀剂层。

2. 发明申请

US20110294068A1 Self-Segregating Multilayer Imaging Stack With Built-In Antireflective Properties 审中-公开
公开(公告)号：US20110294068A1
公开(公告)日：2011-12-01
申请号：US13190226
申请日：2011-07-25
申请人： Joy Cheng , Dario L. Goldfarb , David R. Medeiros , Dirk Pfeiffer , Daniel P. Sanders , Libor Vyklicky
发明人： Joy Cheng , Dario L. Goldfarb , David R. Medeiros , Dirk Pfeiffer , Daniel P. Sanders , Libor Vyklicky
IPC分类号： G03F7/004
CPC分类号： G03F7/091 , G03F7/0752 , Y10S430/136 , Y10S438/952 , Y10T428/24802
摘要： A coating process comprises forming a patterned material layer on a substrate using a self-segregating polymeric composition comprising a polymeric photoresistive material and an antireflective coating material contained in a single solution. When depositing this solution on a substrate and removing the solvent, the two materials self-segregate into two layers. This produces a coated substrate having a uniaxial bilayer coating oriented in a direction orthogonal to the substrate with a top photoresistive coating layer and a bottom antireflective coating layer. Pattern-wise exposing the coated substrate to imaging radiation and contacting the coated substrate with a developer, produces the patterned material layer. Any optional top coat material and a portion of the photoresist layer can be simultaneously removed from the coated substrate to form a patterned photoresist layer on the substrate.

3. 发明授权

US08084193B2 Self-segregating multilayer imaging stack with built-in antireflective properties 有权
标题翻译：具有内置抗反射特性的自分离多层成像叠层
公开(公告)号：US08084193B2
公开(公告)日：2011-12-27
申请号：US12172233
申请日：2008-07-12
申请人： Joy Cheng , Dario L Goldfarb , David R Medeiros , Daniel P Sanders , Dirk Pfeifer , Libor Vylicky
发明人： Joy Cheng , Dario L Goldfarb , David R Medeiros , Daniel P Sanders , Dirk Pfeifer , Libor Vylicky
IPC分类号： G03F7/30 , G03F7/11
CPC分类号： G03F7/091 , G03F7/0752 , Y10S430/136 , Y10S438/952 , Y10T428/24802
摘要： A coating process comprises forming a patterned material layer on a substrate using a self-segregating polymeric composition comprising a polymeric photoresistive material and an antireflective coating material. The polymeric photoresistive material and the antireflective coating material that make up the self segregating composition are contained in a single solution. When depositing this solution on a substrate and removing the solvent, the two materials self-segregate into two layers. The substrate can comprise one of a ceramic, dielectric, metal, or semiconductor material and in some instances a material such as a BARC material that is not from the self segregating composition. The composition may also contain a radiation-sensitive acid generator and a base quencher. This produces a coated substrate having a uniaxial bilayer coating oriented in a direction orthogonal to the substrate with a top photoresistive coating layer and a bottom antireflective coating layer. The process may also include optionally coating a top coat material on the coated substrate. Pattern-wise exposing the coated substrate to imaging radiation and contacting the coated substrate with a developer, produces the patterned material layer wherein the optional top coat material and a portion of the photoresist layer are simultaneously removed from the coated substrate, thereby forming a patterned photoresist layer on the substrate. Alternatively, the optional top coat material, a portion of the photoresist layer and a portion of the bottom antireflective layers are simultaneously removed from the coated substrate by the developer, thereby forming a patterned photoresist layer on the substrate.
摘要翻译：涂覆方法包括使用包含聚合物光致抗蚀剂材料和抗反射涂层材料的自分离聚合物组合物在基材上形成图案化材料层。构成自分离组合物的聚合物光致抗蚀剂材料和抗反射涂层材料包含在单一溶液中。当将该溶液沉积在基材上并除去溶剂时，两种材料自分离成两层。衬底可以包括陶瓷，电介质，金属或半导体材料中的一种，并且在一些情况下可以是不是来自自分离组合物的诸如BARC材料的材料。组合物还可以含有辐射敏感性酸产生剂和碱猝灭剂。这产生了具有单轴双层涂层的涂覆基材，该单轴双层涂层在垂直于基板的方向上具有顶部光刻胶涂层和底部抗反射涂层。该方法还可以包括任选在涂覆的基材上涂覆顶涂层材料。将涂覆的基底图案地曝光成成像辐射并使涂覆的基底与显影剂接触，产生图案化材料层，其中可任选的外涂层材料和光刻胶层的一部分同时从涂覆的基底上移除，从而形成图案化的光致抗蚀剂层。或者，可选的顶涂层材料，光致抗蚀剂层的一部分和底部抗反射层的一部分由显影剂同时从涂覆的基底上移除，从而在基板上形成图案化的光致抗蚀剂层。

4. 发明申请

US20100009132A1 SELF-SEGREGATING MULTILAYER IMAGING STACK WITH BUILT-IN ANTIREFLECTIVE PROPERTIES 有权
标题翻译：自包含多层抗反射特性的多层成像叠层
公开(公告)号：US20100009132A1
公开(公告)日：2010-01-14
申请号：US12172233
申请日：2008-07-12
申请人： Joy Cheng , Dario L. Goldfarb , David R. Medeiros , Daniel P. Sanders , Dirk Pfeifer , Libor Vylicky
发明人： Joy Cheng , Dario L. Goldfarb , David R. Medeiros , Daniel P. Sanders , Dirk Pfeifer , Libor Vylicky
IPC分类号： G03F7/20 , G03F7/004 , B32B3/10
CPC分类号： G03F7/091 , G03F7/0752 , Y10S430/136 , Y10S438/952 , Y10T428/24802
摘要： A coating process comprises forming a patterned material layer on a substrate using a self-segregating polymeric composition comprising a polymeric photoresistive material and an antireflective coating material. The polymeric photoresistive material and the antireflective coating material that make up the self segregating composition are contained in a single solution. When depositing this solution on a substrate and removing the solvent, the two materials self-segregate into two layers. The substrate can comprise one of a ceramic, dielectric, metal, or semiconductor material and in some instances a material such as a BARC material that is not from the self segregating composition. The composition may also contain a radiation-sensitive acid generator and a base quencher. This produces a coated substrate having a uniaxial bilayer coating oriented in a direction orthogonal to the substrate with a top photoresistive coating layer and a bottom antireflective coating layer. The process may also include optionally coating a top coat material on the coated substrate. Pattern-wise exposing the coated substrate to imaging radiation and contacting the coated substrate with a developer, produces the patterned material layer wherein the optional top coat material and a portion of the photoresist layer are simultaneously removed from the coated substrate, thereby forming a patterned photoresist layer on the substrate. Alternatively, the optional top coat material, a portion of the photoresist layer and a portion of the bottom antireflective layers are simultaneously removed from the coated substrate by the developer, thereby forming a patterned photoresist layer on the substrate.
摘要翻译：涂覆方法包括使用包含聚合物光致抗蚀剂材料和抗反射涂层材料的自分离聚合物组合物在基材上形成图案化材料层。构成自分离组合物的聚合物光致抗蚀剂材料和抗反射涂层材料包含在单一溶液中。当将该溶液沉积在基材上并除去溶剂时，两种材料自分离成两层。衬底可以包括陶瓷，电介质，金属或半导体材料中的一种，并且在一些情况下可以是不是来自自分离组合物的诸如BARC材料的材料。组合物还可以含有辐射敏感性酸产生剂和碱猝灭剂。这产生了具有单轴双层涂层的涂覆基材，该单轴双层涂层在垂直于基板的方向上具有顶部光刻胶涂层和底部抗反射涂层。该方法还可以包括任选在涂覆的基材上涂覆顶涂层材料。将涂覆的基底图案地曝光成成像辐射并使涂覆的基底与显影剂接触，产生图案化材料层，其中可任选的外涂层材料和光刻胶层的一部分同时从涂覆的基底上移除，从而形成图案化的光致抗蚀剂层。或者，可选的顶涂层材料，光致抗蚀剂层的一部分和底部抗反射层的一部分由显影剂同时从涂覆的基底上移除，从而在基板上形成图案化的光致抗蚀剂层。

5. 发明授权

US09233840B2 Method for improving self-assembled polymer features 有权
标题翻译：改进自组装聚合物特征的方法
公开(公告)号：US09233840B2
公开(公告)日：2016-01-12
申请号：US12913835
申请日：2010-10-28
申请人： Joy Cheng , Hayato Namai , Daniel P. Sanders
发明人： Joy Cheng , Hayato Namai , Daniel P. Sanders
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , B81C1/00 , H01L21/033 , H01L21/027
CPC分类号： B81C1/00031 , B81C2201/0149 , H01L21/0271 , H01L21/0337 , H01L21/0338
摘要： A method for processing a structure. The structure is formed and includes a substrate, a substructure having a sidewall and disposed on the substrate, a first polymer structure disposed on the substrate, and a second polymer structure disposed on the substrate such that the first polymer structure is disposed between the sidewall and the second polymer structure. An aspect ratio of the first polymer structure, the second polymer structure, or both is reduced in a reducing step. One polymer structure (i.e., the first polymer structure or the second polymer structure) is selectively removed from the structure such that a remaining polymer structure (i.e., the second polymer structure or the first polymer structure) remains disposed on the external surface of the substrate after the one polymer structure has been selectively removed, wherein the aspect ratio of the remaining polymer structure was reduced in the reducing step.
摘要翻译：一种处理结构的方法。该结构被形成并且包括衬底，具有侧壁并设置在衬底上的子结构，设置在衬底上的第一聚合物结构和设置在衬底上的第二聚合物结构，使得第一聚合物结构设置在侧壁和第二聚合物结构。在还原步骤中，第一聚合物结构，第二聚合物结构或两者的纵横比减小。从结构中选择性地除去一种聚合物结构（即，第一聚合物结构或第二聚合物结构），使得剩余的聚合物结构（即，第二聚合物结构或第一聚合物结构）保留在基材的外表面上在选择性去除一种聚合物结构之后，在还原步骤中其余聚合物结构的纵横比降低。

6. 发明授权

US07989026B2 Method of use of epoxy-containing cycloaliphatic acrylic polymers as orientation control layers for block copolymer thin films 有权
标题翻译：使用含环氧基的脂环族丙烯酸聚合物作为嵌段共聚物薄膜的取向控制层的方法
公开(公告)号：US07989026B2
公开(公告)日：2011-08-02
申请号：US12013444
申请日：2008-01-12
申请人： Joy Cheng , Ho-Cheol Kim , Charles T. Rettner , Daniel P. Sanders , Ratnam Sooriyakumaran , Linda Sundberg
发明人： Joy Cheng , Ho-Cheol Kim , Charles T. Rettner , Daniel P. Sanders , Ratnam Sooriyakumaran , Linda Sundberg
IPC分类号： B05D5/00
CPC分类号： B05D5/00 , B05D7/14 , B05D7/52 , C08L53/00 , C09D125/14 , C09D153/00
摘要： Disclosed herein is a method of controlling the orientation of microphase-separated domains in a block copolymer film, comprising forming an orientation control layer comprising an epoxy-containing cycloaliphatic acrylic polymer on a surface of a substrate, irradiating and/or heating the substrate to crosslink the orientation control layer, and forming a block copolymer assembly layer comprising block copolymers which form microphase-separated domains, on a surface of the orientation control layer opposite the substrate. The orientation control layer can be selectively cross-linked to expose regions of the substrate, or the orientation control layer can be patterned without removing the layer, to provide selective patterning on the orientation control layer. In further embodiments, bilayer and trilayer imaging schemes are disclosed.
摘要翻译：本文公开了一种控制嵌段共聚物膜中微相分离的区域的取向的方法，包括在基材的表面上形成包含含环氧基的脂环族丙烯酸聚合物的取向控制层，照射和/或加热该基材以交联取向控制层，并且在与衬底相对的取向控制层的表面上形成包含形成微相分离结构域的嵌段共聚物的嵌段共聚物组合层。取向控制层可以选择性地交联以暴露衬底的区域，或者可以将取向控制层图案化而不去除该层，以在取向控制层上提供选择性图案化。在另外的实施方案中，公开了双层和三层成像方案。

7. 发明申请

US20090212016A1 Aligning polymer films 有权
标题翻译：对准聚合物膜
公开(公告)号：US20090212016A1
公开(公告)日：2009-08-27
申请号：US12036091
申请日：2008-02-22
申请人： Joy Cheng , Daniel P. Sanders , Ratnam Sooriyakumaran
发明人： Joy Cheng , Daniel P. Sanders , Ratnam Sooriyakumaran
IPC分类号： B44C1/22
CPC分类号： H01L21/0337 , B81B2207/056 , B81C1/00031 , Y10T428/24322 , Y10T428/24612 , Y10T428/24802
摘要： A Method. The method includes forming a substructure, on a substrate, including a feature having a sidewall of a first material and a bottom surface of a second material. Applying a solution including two immiscible polymers and third material to the substructure. The immiscible polymers include a first and second polymer. A selective chemical affinity of the first polymer for the material is greater than a selective chemical affinity of the second polymer for the material. The first polymer is segregated from the second polymer. The first polymer selectively migrates to the at least one sidewall, resulting in the first polymer being disposed between the at least one sidewall and the second polymer. The first polymer is selectively removed. The second polymer remains, resulting in forming structures including the substructure, the third material, and the second polymer. The substructure has a pattern. The pattern is transferred to the substrate.
摘要翻译：一个方法。该方法包括在基底上形成子结构，其包括具有第一材料的侧壁和第二材料的底表面的特征。将包括两种不混溶的聚合物和第三种材料的溶液应用于底层结构。不混溶的聚合物包括第一和第二聚合物。第一聚合物对材料的选择性化学亲和力大于第二聚合物对材料的选择性化学亲和力。第一聚合物与第二聚合物分离。第一聚合物选择性地迁移到至少一个侧壁，导致第一聚合物设置在至少一个侧壁和第二聚合物之间。选择性地除去第一种聚合物。残留第二聚合物，导致形成包括亚结构，第三材料和第二聚合物的结构。子结构具有图案。将图案转移到基底。

8. 发明申请

US20090182093A1 Method of Controlling Orientation of Domains in Block Copolymer Films 失效
公开(公告)号：US20090182093A1
公开(公告)日：2009-07-16
申请号：US12013138
申请日：2008-01-11
申请人： Joy Cheng , Ho-Cheol Kim , Daniel P. Sanders , Linda Sundberg
发明人： Joy Cheng , Ho-Cheol Kim , Daniel P. Sanders , Linda Sundberg
IPC分类号： C08L53/00
CPC分类号： C08L63/00 , B05D5/02 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C08F283/10 , C08L53/00 , C09D125/14 , G03F7/0002 , G03F7/038 , Y10S264/901 , Y10S428/91 , Y10T428/24942
摘要： A method of orienting microphase-separated domains is disclosed, comprising applying a composition comprising an orientation control component, and a block copolymer assembly component comprising a block copolymer having at least two microphase-separated domains in which the orientation control component is substantially immiscible with the block copolymer assembly component upon forming a film; and forming a compositionally vertically segregated film on the surface of the substrate from the composition. The orientation control component and block copolymer segregate during film forming to form the compositionally vertically-segregated film on the surface of a substrate, where the orientation control component is enriched adjacent to the surface of the compositionally segregated film adjacent to the surface of the substrate, and the block copolymer assembly is enriched at an air-surface interface.

9. 发明申请

US20090179002A1 METHOD OF FORMING POLYMER FEATURES BY DIRECTED SELF-ASSEMBLY OF BLOCK COPOLYMERS 有权
标题翻译：通过方向自组装块状共聚物形成聚合物特征的方法
公开(公告)号：US20090179002A1
公开(公告)日：2009-07-16
申请号：US12061693
申请日：2008-04-03
申请人： Joy Cheng , William D. Hinsberg , Ho-Cheol Kim , Charles T. Rettner , Daniel P. Sanders
发明人： Joy Cheng , William D. Hinsberg , Ho-Cheol Kim , Charles T. Rettner , Daniel P. Sanders
IPC分类号： B05D5/00 , C23F1/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Disclosed are methods of forming polymer structures comprising: applying a solution of a block copolymer assembly comprising at least one block copolymer to a neutral substrate having a chemical pattern thereon, the chemical pattern comprising alternating pinning and neutral regions that are chemically distinct and have a first spatial frequency given by the number of paired sets of pinning and neutral regions along a given direction on the substrate; and forming domains of the block copolymer that form by lateral segregation of the blocks in accordance with the underlying chemical pattern, wherein at least one domain of the block copolymer assembly has an affinity for the pinning regions, wherein a structure extending across the chemical pattern is produced, the structure having a uniform second spatial frequency given by the number of repeating sets of domains along the given direction that is at least twice that of the first spatial frequency.
摘要翻译：公开了形成聚合物结构的方法，包括：将包含至少一种嵌段共聚物的嵌段共聚物组合物溶液施加到其上具有化学图案的中性衬底上，所述化学图案包括化学上不同的交替的钉扎和中性区域，并且具有第一空间频率由衬底上沿着给定方向的成套组钉扎和中性区域的数量给出; 以及通过根据下面的化学图案横向分离块而形成嵌段共聚物的结构域，其中嵌段共聚物组合物的至少一个结构域对于钉扎区域具有亲和力，其中横跨化学图案延伸的结构是所述结构具有由给定方向上的至少是第一空间频率的两倍的畴的重复集合的数量给出的统一的第二空间频率。

10. 发明授权

US08114306B2 Method of forming sub-lithographic features using directed self-assembly of polymers 有权
标题翻译：使用聚合物的定向自组装形成亚光刻特征的方法
公开(公告)号：US08114306B2
公开(公告)日：2012-02-14
申请号：US12470760
申请日：2009-05-22
申请人： Joy Cheng , Kafai Lai , Wai-Kin Li , Young-Hye Na , Charles Rettner , Daniel P. Sanders , Da Yang
发明人： Joy Cheng , Kafai Lai , Wai-Kin Li , Young-Hye Na , Charles Rettner , Daniel P. Sanders , Da Yang
IPC分类号： H01L21/31 , H01L21/469 , B32B3/00 , B05D3/00
CPC分类号： H01L21/76816 , B81B2203/0353 , B81B2207/07 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , G03F7/40 , H01L21/0337 , H01L21/31144 , Y10S438/947
摘要： Methods involving the self-assembly of block copolymers are described herein, in which by beginning with openings (in one or more substrates) that have a targeted CD (critical dimension), holes are formed, in either regular arrays or arbitrary arrangements. Significantly, the percentage variation in the average diameter of the formed holes is less than the percentage variation of the average diameter of the initial openings. The formed holes (or vias) can be transferred into the underlying substrate(s), and these holes may then be backfilled with material, such as a metallic conductor. Preferred aspects of the invention enable the creation of vias with tighter pitch and better CD uniformity, even at sub-22 nm technology nodes.
摘要翻译：本文描述了涉及嵌段共聚物的自组装的方法，其中从具有目标CD（临界尺寸）的开口（在一个或多个衬底中）开始，以规则阵列或任意布置形成孔。显着地，形成的孔的平均直径的百分比变化小于初始开口的平均直径的变化百分比。形成的孔（或通孔）可以被转移到下面的基底中，然后这些孔可以用诸如金属导体的材料回填。本发明的优选方面能够创建具有更紧的间距和更好的CD均匀性的通孔，即使在22nm以下的技术节点。

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