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    • 1. 发明申请
    • METHODS FOR ALIGNING POLYMER FILMS AND RELATED STRUCTURES
    • 聚合物膜和相关结构的方法
    • US20090214823A1
    • 2009-08-27
    • US12058006
    • 2008-03-28
    • Joy ChengDaniel P. SandersRatnam Sooriyakumaran
    • Joy ChengDaniel P. SandersRatnam Sooriyakumaran
    • B32B3/10B05D1/00B05D3/00B01J19/00B32B9/00B32B3/00
    • H01L21/0337B81B2207/056B81C1/00031Y10T428/24322Y10T428/24612Y10T428/24802
    • Methods and a structure. The method includes applying a solution including two or more immiscible polymers to a substructure including features having at least one sidewall and a bottom surface. The immiscible polymers include a first polymer and a second polymer. The at least one sidewall includes a material. A selective chemical affinity of the first polymer for the material is greater than a selective chemical affinity of the second polymer for the material. The first polymer is segregated from the second polymer. The first polymer selectively migrates to the at least one sidewall, resulting in the first polymer being disposed between the at least one sidewall and the second polymer. One or more immiscible polymers is selectively removed. At least one immiscible polymer remains, resulting in forming structures including the substructure and the immiscible polymer remaining. Two additional methods and a structure are also included.
    • 方法和结构。 该方法包括将包含两种或更多种不混溶聚合物的溶液施加到包括具有至少一个侧壁和底部表面的特征的子结构中。 不混溶的聚合物包括第一聚合物和第二聚合物。 所述至少一个侧壁包括材料。 第一聚合物对材料的选择性化学亲和力大于第二聚合物对材料的选择性化学亲和力。 第一聚合物与第二聚合物分离。 第一聚合物选择性地迁移到至少一个侧壁,导致第一聚合物设置在至少一个侧壁和第二聚合物之间。 选择性地除去一种或多种不混溶的聚合物。 残留至少一种不混溶的聚合物,导致形成结构,其中包括亚结构和残留的不混溶聚合物。 还包括两种额外的方法和结构。
    • 3. 发明授权
    • Aligning polymer films
    • 对准聚合物膜
    • US07906031B2
    • 2011-03-15
    • US12036091
    • 2008-02-22
    • Joy ChengDaniel P. SandersRatnam Sooriyakumaran
    • Joy ChengDaniel P. SandersRatnam Sooriyakumaran
    • C03C15/00
    • H01L21/0337B81B2207/056B81C1/00031Y10T428/24322Y10T428/24612Y10T428/24802
    • A Method. The method includes forming a substructure, on a substrate, including a feature having a sidewall of a first material and a bottom surface of a second material. Applying a solution including two immiscible polymers and third material to the substructure. The immiscible polymers include a first and second polymer. A selective chemical affinity of the first polymer for the material is greater than a selective chemical affinity of the second polymer for the material. The first polymer is segregated from the second polymer. The first polymer selectively migrates to the at least one sidewall, resulting in the first polymer being disposed between the at least one sidewall and the second polymer. The first polymer is selectively removed. The second polymer remains, resulting in forming structures including the substructure, the third material, and the second polymer. The substructure has a pattern. The pattern is transferred to the substrate.
    • 一个方法。 该方法包括在基底上形成子结构,其包括具有第一材料的侧壁和第二材料的底表面的特征。 将包括两种不混溶的聚合物和第三种材料的溶液应用于底层结构。 不混溶的聚合物包括第一和第二聚合物。 第一聚合物对材料的选择性化学亲和力大于第二聚合物对材料的选择性化学亲和力。 第一聚合物与第二聚合物分离。 第一聚合物选择性地迁移到至少一个侧壁,导致第一聚合物设置在至少一个侧壁和第二聚合物之间。 选择性地除去第一种聚合物。 残留第二聚合物,导致形成包括亚结构,第三材料和第二聚合物的结构。 子结构具有图案。 将图案转移到基底。
    • 6. 发明申请
    • Aligning polymer films
    • 对准聚合物膜
    • US20090212016A1
    • 2009-08-27
    • US12036091
    • 2008-02-22
    • Joy ChengDaniel P. SandersRatnam Sooriyakumaran
    • Joy ChengDaniel P. SandersRatnam Sooriyakumaran
    • B44C1/22
    • H01L21/0337B81B2207/056B81C1/00031Y10T428/24322Y10T428/24612Y10T428/24802
    • A Method. The method includes forming a substructure, on a substrate, including a feature having a sidewall of a first material and a bottom surface of a second material. Applying a solution including two immiscible polymers and third material to the substructure. The immiscible polymers include a first and second polymer. A selective chemical affinity of the first polymer for the material is greater than a selective chemical affinity of the second polymer for the material. The first polymer is segregated from the second polymer. The first polymer selectively migrates to the at least one sidewall, resulting in the first polymer being disposed between the at least one sidewall and the second polymer. The first polymer is selectively removed. The second polymer remains, resulting in forming structures including the substructure, the third material, and the second polymer. The substructure has a pattern. The pattern is transferred to the substrate.
    • 一个方法。 该方法包括在基底上形成子结构,其包括具有第一材料的侧壁和第二材料的底表面的特征。 将包括两种不混溶的聚合物和第三种材料的溶液应用于底层结构。 不混溶的聚合物包括第一和第二聚合物。 第一聚合物对材料的选择性化学亲和力大于第二聚合物对材料的选择性化学亲和力。 第一聚合物与第二聚合物分离。 第一聚合物选择性地迁移到至少一个侧壁,导致第一聚合物设置在至少一个侧壁和第二聚合物之间。 选择性地除去第一种聚合物。 残留第二聚合物,导致形成包括亚结构,第三材料和第二聚合物的结构。 子结构具有图案。 将图案转移到基底。
    • 7. 发明授权
    • Methods for aligning polymer films and related structures
    • 聚合物膜和相关结构的对准方法
    • US08486489B2
    • 2013-07-16
    • US12058006
    • 2008-03-28
    • Joy ChengDaniel P. SandersRatnam Sooriyakumaran
    • Joy ChengDaniel P. SandersRatnam Sooriyakumaran
    • B05D3/00
    • H01L21/0337B81B2207/056B81C1/00031Y10T428/24322Y10T428/24612Y10T428/24802
    • Methods and a structure. The method includes applying a solution including two or more immiscible polymers to a substructure including features having at least one sidewall and a bottom surface. The immiscible polymers include a first polymer and a second polymer. The at least one sidewall includes a material. A selective chemical affinity of the first polymer for the material is greater than a selective chemical affinity of the second polymer for the material. The first polymer is segregated from the second polymer. The first polymer selectively migrates to the at least one sidewall, resulting in the first polymer being disposed between the at least one sidewall and the second polymer. One or more immiscible polymers is selectively removed. At least one immiscible polymer remains, resulting in forming structures including the substructure and the immiscible polymer remaining. Two additional methods and a structure are also included.
    • 方法和结构。 该方法包括将包含两种或更多种不混溶聚合物的溶液施加到包括具有至少一个侧壁和底部表面的特征的子结构中。 不混溶的聚合物包括第一聚合物和第二聚合物。 所述至少一个侧壁包括材料。 第一聚合物对材料的选择性化学亲和力大于第二聚合物对材料的选择性化学亲和力。 第一聚合物与第二聚合物分离。 第一聚合物选择性地迁移到至少一个侧壁,导致第一聚合物设置在至少一个侧壁和第二聚合物之间。 选择性地除去一种或多种不混溶的聚合物。 残留至少一种不混溶的聚合物,导致形成结构,其中包括亚结构和残留的不混溶聚合物。 还包括两种额外的方法和结构。
    • 8. 发明申请
    • METHODS OF FORMING TOPOGRAPHICAL FEATURES USING SEGREGATING POLYMER MIXTURES
    • 使用分散聚合物混合物形成地形特征的方法
    • US20120135146A1
    • 2012-05-31
    • US12957008
    • 2010-11-30
    • Joy ChengHayato NamaiCharles T. RettnerDaniel P. SandersRatnam Sooriyakumaran
    • Joy ChengHayato NamaiCharles T. RettnerDaniel P. SandersRatnam Sooriyakumaran
    • B05D3/12
    • B81C1/00031B81C2201/0149H01L21/0337H01L21/0338
    • Methods are disclosed for forming topographical features. In one method, a pre-patterned structure is provided which comprises i) a support member having a surface and ii) an element for topographically guiding segregation of a polymer mixture including a first polymer and a second polymer, the element comprising a feature having a sidewall adjoined to the surface. The polymer mixture is disposed on the pre-patterned structure, wherein the disposed polymer mixture has contact with the sidewall and the surface. The first polymer and the second polymer are segregated in a plane parallel to the surface, thereby forming a segregated structure comprising a first polymer domain and a second polymer domain. The first polymer domain and/or the second polymer domain are lithographically patterned, thereby forming topographical features comprising at least one of i) a first feature comprising a lithographically patterned first polymer domain and ii) a second feature comprising a lithographically patterned second polymer domain.
    • 公开了形成形貌特征的方法。 在一种方法中,提供预先图案化的结构,其包括i)具有表面的支撑构件和ii)用于拓扑地引导包括第一聚合物和第二聚合物的聚合物混合物的偏析的元件,所述元件包括具有 侧壁与表面相邻。 聚合物混合物设置在预图案化结构上,其中所设置的聚合物混合物与侧壁和表面接触。 第一聚合物和第二聚合物在平行于表面的平面中分离,从而形成包含第一聚合物结构域和第二聚合物结构域的分离结构。 第一聚合物结构域和/或第二聚合物结构域被光刻图案化,从而形成包括以下至少一个的拓扑特征:i)包含光刻图案化的第一聚合物结构域的第一特征和ii)包含光刻图案化的第二聚合物结构域的第二特征。