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1. 发明授权

US07040966B2 Carbonation of pH controlled KOH solution for improved polishing of oxide films on semiconductor wafers 失效
标题翻译：碳酸化pH控制的KOH溶液，以改善对半导体晶片上的氧化膜的抛光
公开(公告)号：US07040966B2
公开(公告)日：2006-05-09
申请号：US10825849
申请日：2004-04-16
申请人： Joseph F. Salfelder , Wayne Swart , Gopalakrishna B. Prabhu , Srinivas R. Mirmira , Laertis Economikos , Fen Fen Jamin , Donald J. Delehanty , Daniel Heenan , Joseph M. Danza
发明人： Joseph F. Salfelder , Wayne Swart , Gopalakrishna B. Prabhu , Srinivas R. Mirmira , Laertis Economikos , Fen Fen Jamin , Donald J. Delehanty , Daniel Heenan , Joseph M. Danza
IPC分类号： B24B1/00
CPC分类号： H01L21/31053
摘要： A method and polishing system for planarizing a substrate having one or more materials formed thereon. The method generally includes positioning the substrate in proximity with a polishing pad, dispensing a polishing fluid to the polishing pad, the polishing fluid being subjected to carbonation prior to being dispensed to the polishing pad, and polishing the substrate. The polishing system generally includes a polishing platen having a polishing pad disposed thereon and in proximity to the substrate, a controller configured to cause the polishing pad to contact the substrate, and a polishing fluid delivery system to deliver a polishing fluid to the polishing pad, the polishing fluid delivery system including a carbonation system.
摘要翻译：一种用于平坦化其上形成有一种或多种材料的基板的方法和抛光系统。该方法通常包括将衬底定位在抛光垫附近，将抛光流体分配到抛光垫，抛光流体在分配到抛光垫之前进行碳酸化，并抛光衬底。抛光系统通常包括具有设置在其上并且靠近基板的抛光垫的抛光台板，配置成使抛光垫与基板接触的控制器和抛光流体输送系统以将抛光流体输送到抛光垫，抛光液输送系统包括碳酸化系统。

2. 发明申请

US20050042877A1 Carbonation of pH controlled KOH solution for improved polishing of oxide films on semiconductor wafers 失效
标题翻译：碳酸化pH控制的KOH溶液，以改善对半导体晶片上的氧化膜的抛光
公开(公告)号：US20050042877A1
公开(公告)日：2005-02-24
申请号：US10825849
申请日：2004-04-16
申请人： Joseph Salfelder , Wayne Swart , Gopalakrishna Prabhu , Srinivas Mirmira , Laertis Economikos , Fen Jamin , Donald Delehanty , Daniel Heenan , Joseph Danza
发明人： Joseph Salfelder , Wayne Swart , Gopalakrishna Prabhu , Srinivas Mirmira , Laertis Economikos , Fen Jamin , Donald Delehanty , Daniel Heenan , Joseph Danza
IPC分类号： H01L21/3105 , H01L21/302 , H01L21/461
CPC分类号： H01L21/31053
摘要： A method and polishing system for planarizing a substrate having one or more materials formed thereon. The method generally includes positioning the substrate in proximity with a polishing pad, dispensing a polishing fluid to the polishing pad, the polishing fluid being subjected to carbonation prior to being dispensed to the polishing pad, and polishing the substrate. The polishing system generally includes a polishing platen having a polishing pad disposed thereon and in proximity to the substrate, a controller configured to cause the polishing pad to contact the substrate, and a polishing fluid delivery system to deliver a polishing fluid to the polishing pad, the polishing fluid delivery system including a carbonation system.
摘要翻译：一种用于平坦化其上形成有一种或多种材料的基板的方法和抛光系统。该方法通常包括将衬底定位在抛光垫附近，将抛光流体分配到抛光垫，抛光流体在分配到抛光垫之前进行碳酸化，并抛光衬底。抛光系统通常包括具有设置在其上并且靠近基板的抛光垫的抛光台板，配置成使抛光垫与基板接触的控制器和抛光流体输送系统以将抛光流体输送到抛光垫，抛光液输送系统包括碳酸化系统。

3. 发明授权

US06368969B1 Chemical-mechanical polishing methods 失效
标题翻译：化学机械抛光方法
公开(公告)号：US06368969B1
公开(公告)日：2002-04-09
申请号：US09607350
申请日：2000-06-30
申请人： Laertis Economikos , Fen Fen Jamin
发明人： Laertis Economikos , Fen Fen Jamin
IPC分类号： H01L21302
CPC分类号： H01L21/3212
摘要： The polishing uniformity of a material on a substrate is improved by using a polishing method where an applied pressure on the backside of the substrate is changed during the polishing process. The method is especially useful for polishing thin material layers requiring precise control of polishing across the substrate, e.g., for TaSiN layers used in the formation of gate stacks and stacked capacitors.
摘要翻译：通过使用在抛光处理中改变衬底背面施加的压力而改变衬底的材料的抛光均匀性得到改善。该方法对于抛光需要精确控制衬底上的抛光的薄材料层是特别有用的，例如用于形成栅叠层和叠层电容器的TaSiN层。

4. 发明授权

US07214623B2 Planarization system and method using a carbonate containing fluid 失效
标题翻译：使用含碳酸盐的流体的平面化系统和方法
公开(公告)号：US07214623B2
公开(公告)日：2007-05-08
申请号：US10605610
申请日：2003-10-13
申请人： Donald J. Delehanty , James W. Hannah , Daniel M. Heenan , Fen F. Jamin , Laertis Economikos
发明人： Donald J. Delehanty , James W. Hannah , Daniel M. Heenan , Fen F. Jamin , Laertis Economikos
IPC分类号： H01L21/302
CPC分类号： C09G1/04 , B24B7/228 , H01L21/31053
摘要： Disclosed herein are a system and method of polishing a layer of a substrate. The disclosed method includes providing a polishing apparatus adapted to impart relative movement between a polishing pad and a substrate having a first layer to be polished; providing a liquid medium having a pH between 4 and 11 to an interface between the substrate and the polishing pad, the liquid medium including a pH controlling substance including at least one of an acid and a base, a carbonate and a stabilizer additive comprising at least one selected from the group consisting of amino acids and polyacrylic acid; and moving at least one of the substrate and the polishing pad relative to the other to polish the layer of the substrate.
摘要翻译：本文公开了一种抛光衬底层的系统和方法。所公开的方法包括提供适于在抛光垫和具有要抛光的第一层的基底之间施加相对运动的抛光装置; 提供pH在4和11之间的液体介质到基底和抛光垫之间的界面，液体介质包括pH控制物质，其包括酸和碱中的至少一种，碳酸盐和稳定剂添加剂，至少包括一个选自氨基酸和聚丙烯酸; 并且相对于另一个移动衬底和抛光垫中的至少一个以抛光衬底的层。

5. 发明申请

US20050079709A1 PLANARIZATION SYSTEM AND METHOD USING A CARBONATE CONTAINING FLUID 失效
标题翻译：使用含有碳酸盐的流化床系统和方法
公开(公告)号：US20050079709A1
公开(公告)日：2005-04-14
申请号：US10605610
申请日：2003-10-13
申请人： Donald Delehanty , James Hannah , Daniel Heenan , Fen Jamin , Laertis Economikos
发明人： Donald Delehanty , James Hannah , Daniel Heenan , Fen Jamin , Laertis Economikos
IPC分类号： B24B7/22 , B24B37/04 , C09G1/04 , H01L21/302 , H01L21/3105 , H01L21/461
CPC分类号： C09G1/04 , B24B7/228 , H01L21/31053
摘要： Disclosed herein are a system and method of polishing a layer of a substrate. The disclosed method includes providing a polishing apparatus adapted to impart relative movement between a polishing pad and a substrate having a first layer to be polished; providing a liquid medium having a pH between 4 and 11 to an interface between the substrate and the polishing pad, the liquid medium including a pH controlling substance including at least one of an acid and a base, a carbonate and a stabilizer additive comprising at least one selected from the group consisting of amino acids and polyacrylic acid; and moving at least one of the substrate and the polishing pad relative to the other to polish the layer of the substrate.
摘要翻译：本文公开了一种抛光衬底层的系统和方法。所公开的方法包括提供适于在抛光垫和具有要抛光的第一层的基底之间施加相对运动的抛光装置; 提供pH在4和11之间的液体介质到基底和抛光垫之间的界面，液体介质包括pH控制物质，其包括酸和碱中的至少一种，碳酸盐和稳定剂添加剂，至少包括一个选自氨基酸和聚丙烯酸; 并且相对于另一个移动衬底和抛光垫中的至少一个以抛光衬底的层。

6. 发明授权

US08143166B2 Polishing method with inert gas injection 有权
标题翻译：惰性气体注入抛光方法
公开(公告)号：US08143166B2
公开(公告)日：2012-03-27
申请号：US12046151
申请日：2008-03-11
申请人： Feng Zhao , Wu Ping Liu , John Sudijono , Laertis Economikos , Lawrence A. Clevenger
发明人： Feng Zhao , Wu Ping Liu , John Sudijono , Laertis Economikos , Lawrence A. Clevenger
IPC分类号： H01L21/461
CPC分类号： H01L21/31053 , H01L21/3212
摘要： A polishing process in a semiconductor device fabrication process employs a polishing composition in which a gaseous phase is created within the polishing composition. During a polishing process, the gaseous phase dynamically responds to changes in the surface profile of the material undergoing removal by chemical and abrasive action during polishing. The inert gas bubble density dynamically increases in proximity to surface region of the substrate being polished that are prone to dishing and erosion. The increased inert gas bubble density operates to reduce the polish removal rate relative to other regions of the substrate. The dynamic action of the gaseous phase within the polishing composition functions to selectively reduce the localized polish removal rate such that a uniformly smooth and flat polished surface is obtained that is independent of the influence of pattern density during the polishing process.
摘要翻译：在半导体器件制造工艺中的抛光工艺使用其中在抛光组合物内产生气相的抛光组合物。在抛光过程中，气相通过抛光期间的化学和磨蚀作用动态地响应经历去除的材料的表面轮廓的变化。惰性气泡密度在被抛光的基底的表面区域附近动态增加，这些表面区域易于发生凹陷和侵蚀。增加的惰性气泡密度用于降低相对于基底的其它区域的抛光去除速率。抛光组合物中气相的动态作用用于选择性地降低局部抛光去除速率，使得获得与抛光过程中图案密度的影响无关的均匀光滑和平坦的抛光表面。

7. 发明申请

US20090233444A1 POLISHING METHOD WITH INERT GAS INJECTION 有权
标题翻译：具有惰性气体注入的抛光方法
公开(公告)号：US20090233444A1
公开(公告)日：2009-09-17
申请号：US12046151
申请日：2008-03-11
申请人： Feng Zhao , Wu Ping Liu , John Sudijono , Laertis Economikos , Lawrence A. Clevenger
发明人： Feng Zhao , Wu Ping Liu , John Sudijono , Laertis Economikos , Lawrence A. Clevenger
IPC分类号： H01L21/306 , C09K13/00
CPC分类号： H01L21/31053 , H01L21/3212
摘要： A polishing process in a semiconductor device fabrication process employs a polishing composition in which a gaseous phase is created within the polishing composition. During a polishing process, the gaseous phase dynamically responds to changes in the surface profile of the material undergoing removal by chemical and abrasive action during polishing. The inert gas bubble density dynamically increases in proximity to surface region of the substrate being polished that are prone to dishing and erosion. The increased inert gas bubble density operates to reduce the polish removal rate relative to other regions of the substrate. The dynamic action of the gaseous phase within the polishing composition functions to selectively reduce the localized polish removal rate such that a uniformly smooth and flat polished surface is obtained that is independent of the influence of pattern density during the polishing process.
摘要翻译：在半导体器件制造工艺中的抛光工艺使用其中在抛光组合物内产生气相的抛光组合物。在抛光过程中，气相通过抛光期间的化学和磨蚀作用动态地响应经历去除的材料的表面轮廓的变化。惰性气泡密度在被抛光的基底的表面区域附近动态增加，这些表面区域易于发生凹陷和侵蚀。增加的惰性气泡密度用于降低相对于基底的其它区域的抛光去除速率。抛光组合物中气相的动态作用用于选择性地降低局部抛光去除速率，使得获得与抛光过程中图案密度的影响无关的均匀光滑和平坦的抛光表面。

8. 发明申请

US20080051008A1 APPARATUS AND METHOD FOR CHEMICAL MECHANICAL POLISHING WITH IMPROVED UNIFORMITY 审中-公开
标题翻译：具有改进均匀性的化学机械抛光的装置和方法
公开(公告)号：US20080051008A1
公开(公告)日：2008-02-28
申请号：US11466133
申请日：2006-08-22
申请人： Laertis Economikos , Deok-Kee Kim , Byeongju Park
发明人： Laertis Economikos , Deok-Kee Kim , Byeongju Park
IPC分类号： B24B49/00 , B24B7/30 , B24B29/00
CPC分类号： B24B37/042 , B24B1/005
摘要： A chemical mechanical polishing (CMP) apparatus includes a workpiece carrier configured for retaining a workpiece thereupon, a polishing platen configured for retaining a polishing pad thereupon, and an electromagnetic coil surrounding a periphery of the workpiece carrier. The electromagnetic coil is configured to provide a magnetic field of alternating polarity to cause the rotation of ferromagnetic slurry particles disposed on the workpiece to facilitate polishing of the workpiece.
摘要翻译：化学机械抛光（CMP）装置包括构造成用于保持其上的工件的工件载体，被配置为用于将抛光垫保持在其上的抛光台和围绕工件载体的周边的电磁线圈。电磁线圈被配置成提供具有交替极性的磁场，以引起设置在工件上的铁磁性浆料颗粒的旋转，以便于抛光工件。

9. 发明授权

US06794242B1 Extendible process for improved top oxide layer for DRAM array and the gate interconnects while providing self-aligned gate contacts 有权
标题翻译：用于DRAM阵列和栅极互连的改进的顶部氧化物层，同时提供自对准栅极触点的可扩展工艺
公开(公告)号：US06794242B1
公开(公告)日：2004-09-21
申请号：US09675435
申请日：2000-09-29
申请人： Thomas W. Dyer , Andreas Knorr , Laertis Economikos , Scott Halle , Rajeev Malik , Norbert Arnod
发明人： Thomas W. Dyer , Andreas Knorr , Laertis Economikos , Scott Halle , Rajeev Malik , Norbert Arnod
IPC分类号： H01L218242
CPC分类号： H01L27/10864 , H01L27/10891
摘要： A Top Oxide Method is used to form an oxide layer over an array of vertical transistors as in a trench dynamic random access memory (DRAM) array with vertically stacked access metal oxide semiconductor field effect transistors (MOSFETs). The Top Oxide is formed by first forming the vertical devices with the pad nitride remaining in place. Once the devices have been formed and the gate polysilicon has been planarized down to the surface of the pad nitride, the pad nitride is stripped away leaving the tops of the gate polysilicon plugs extending above the active silicon surface. This pattern of polysilicon plugs defines the pattern over which the Top Oxide is deposited. The deposited Top Oxide fills the regions between and on top of the polysilicon plugs. The Top Oxide is than planarized back to the tops of the polysilicon plugs so contacts can be made between the passing interconnects and the gates of the vertical devices. The Top Oxide layer serves to separate the passing interconnects from the active silicon thereby reducing capacitive coupling between the two levels and providing a robust etch-stop layer for the reactive ion etch (RIE) patterning of the subsequent interconnect level.
摘要翻译：如在具有垂直堆叠的存取金属氧化物半导体场效应晶体管（MOSFET）的沟槽动态随机存取存储器（DRAM）阵列中，顶部氧化物方法用于在垂直晶体管阵列上形成氧化物层。顶部氧化物通过首先形成垂直装置而形成，其中衬垫氮化物保持就位。一旦器件已经形成并且栅极多晶硅已经被平坦化到衬底氮化物的表面之下，衬垫氮化物被剥离掉，留下栅极多晶硅插塞的顶部延伸到活性硅表面之上。这种多晶硅插塞的图形定义了顶部氧化物沉积的图案。沉积的顶部氧化物填充多晶硅插塞之间和之上的区域。顶部氧化物被平坦化回到多晶硅插塞的顶部，因此可以在通过的互连件和垂直装置的栅极之间形成接触。顶部氧化物层用于将通过的互连与有源硅分离，从而减少两个电平之间的电容耦合，并提供用于后续互连电平的反应离子蚀刻（RIE）图案化的鲁棒蚀刻停止层。

10. 发明授权

US06656817B2 Method of filling isolation trenches in a substrate 失效
标题翻译：在衬底中填充隔离沟槽的方法
公开(公告)号：US06656817B2
公开(公告)日：2003-12-02
申请号：US10136097
申请日：2002-04-30
申请人： Ramachandra Divakaruni , Laertis Economikos , Byeong Y. Kim
发明人： Ramachandra Divakaruni , Laertis Economikos , Byeong Y. Kim
IPC分类号： H01L2176
CPC分类号： H01L21/76224 , H01L21/76229 , H01L21/763
摘要： Disclosed herein is a method of filling isolation trenches in a substrate. The method includes anisotropically etching trenches in a surface of a substrate and partially filling the trenches with a deposited oxide. As a consequence of the deposition, the oxide accumulates in mounds on the surface between trenches. The trenches are then filled with a supporting material of a highly flowable material such as anti-reflective coating (ARC), low-K dielectric, or a spin-on-polymer, or alternatively, a supporting material of polysilicon. A flattening process is then applied to lower the mound topography. The supporting material is then removed and the filling of the trenches with oxide is then continued. When polysilicon is used as the supporting material, the mounds are removed by wet etching prior to removing the polysilicon.
摘要翻译：本文公开了一种在衬底中填充隔离沟槽的方法。该方法包括在衬底的表面中各向异性蚀刻沟槽，并用沉积的氧化物部分地填充沟槽。作为沉积的结果，氧化物堆积在沟槽之间的表面上的土堆中。然后用诸如抗反射涂层（ARC），低K电介质或旋涂聚合物的高度可流动的材料的支撑材料或者多晶硅的支撑材料填充沟槽。然后应用扁平化过程以降低墩形地形。然后移除支撑材料，然后继续用氧化物填充沟槽。当使用多晶硅作为支撑材料时，在去除多晶硅之前通过湿法蚀刻去除土堆。

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