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    • 2. 发明授权
    • Gas distribution system
    • 燃气分配系统
    • US5451290A
    • 1995-09-19
    • US17360
    • 1993-02-11
    • Joseph F. Salfelder
    • Joseph F. Salfelder
    • C23F4/00H01J37/32H01L21/302H01L21/3065H01L21/311H01L21/00
    • H01J37/3244H01L21/31116
    • Improved apparatus and a method for reducing polymerparticle contamination of semiconductor wafers being processed in a system for plasma-etching silicon dioxide. A quartz gas distribution plate contains a number of gas inlet holes having cross-sectional areas sufficiently small to prevent plasma from being present in the gas inlet holes to inhibit formation of polymer material and flaking of contamination particles therefrom. The gas inlet holes are formed on the surface of the quartz gas distribution plate directly over a wafer being processed. Alternatively, the gas inlet holes are formed in the quartz plate to radially extend to the peripheral edge of the quartz plate so that contamination particles, if any, fall outside the bounds of a wafer beneath the quartz plate. The method disclosed includes the step of feeding CHF.sub.3 gas through the gas inlet holes having cross-sectional areas sufficiently small to prevent formation of polymer within the holes and subsequent flaking and contamination of a wafer being processed.
    • 改进的设备和减少在用于等离子体蚀刻二氧化硅的系统中处理的半导体晶片的聚合物颗粒污染的方法。 石英气体分配板包含多个气体入口孔,其截面面积足够小,以防止气体入口孔中存在等离子体,从而抑制聚合物材料的形成和污染颗粒的剥落。 气体入口孔直接在被处理的晶片上形成在石英气体分配板的表面上。 或者,气体入口孔形成在石英板中以径向延伸到石英板的周边边缘,使得污染颗粒(如果有的话)落在石英板下面的晶片的界限之外。 所公开的方法包括通过气体入口孔进入CHF 3气体的步骤,该气体入口孔的截面面积足够小,以防止在孔内形成聚合物,并随后剥落和污染被处理的晶片。
    • 3. 发明授权
    • Erosion resistant electrostatic chuck with improved cooling system
    • 耐腐蚀静电吸盘具有改进的冷却系统
    • US5631803A
    • 1997-05-20
    • US369237
    • 1995-01-06
    • John F. CameronJoseph F. SalfelderChandra Deshpandey
    • John F. CameronJoseph F. SalfelderChandra Deshpandey
    • B23Q3/15H01L21/02H01L21/311H01L21/3213H01L21/683H02N13/00
    • H01L21/02071H01L21/31138H01L21/6831
    • An electrostatic chuck (20) for holding a substrate (40) in a process chamber (50) comprises a base (25) supporting a resilient insulator (30). The insulator (30) comprises (i) an electrode (35) embedded therein; (ii) a top surface (34) with a peripheral edge (32); and (iii) cooling grooves (45) for holding coolant in the top surface (34), the tips (125) of the cooling grooves (45) and the peripheral edge (32) of the insulator (30) defining an edge gap (130) having a width w. The width w of the edge gap (130) is sized sufficiently small that the coolant in the grooves (45) cools the perimeter (120) of the substrate (40) held on the chuck (20). The insulator (30) is sufficiently thick that when a substrate (40) is electrostatically held on the chuck (20) and coolant is held in the cooling grooves (45), the insulator (30) in the edge gap (130) resiliently conforms to the substrate (40) so that substantially no coolant leaks out from the tips (125) of the cooling grooves (45). Preferably, the coolant grooves (45) do not cut into the electrode (35).
    • 用于将基板(40)保持在处理室(50)中的静电卡盘(20)包括支撑弹性绝缘体(30)的基座(25)。 绝缘体(30)包括(i)嵌入其中的电极(35) (ii)具有周边边缘(32)的顶表面(34); 和(iii)用于在顶表面(34)中保持冷却剂的冷却槽(45),冷却槽(45)的顶端(125)和绝缘体(30)的周边边缘(32)限定边缘间隙 130)具有宽度w。 边缘间隙(130)的宽度w的尺寸足够小,使得凹槽(45)中的冷却剂冷却保持在卡盘(20)上的基底(40)的周边(120)。 绝缘体(30)足够厚,当基板(40)被静电保持在卡盘(20)上并且冷却剂被保持在冷却槽(45)中时,边缘间隙(130)中的绝缘体(30)弹性地符合 到基板(40),使得基本上没有冷却剂从冷却槽(45)的末端(125)泄漏出来。 优选地,冷却剂槽(45)不切入电极(35)。