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1. 发明授权

US07491635B2 Method for forming a fully silicided gate and devices obtained thereof 有权
标题翻译：用于形成全硅化物栅的方法及其获得的器件
公开(公告)号：US07491635B2
公开(公告)日：2009-02-17
申请号：US11484439
申请日：2006-07-11
申请人： Jorge Adrian Kittl , Anne Lauwers , Anabela Veloso , Anil Kottantharyil , Marcus Johannes Henricus Van Dal
发明人： Jorge Adrian Kittl , Anne Lauwers , Anabela Veloso , Anil Kottantharyil , Marcus Johannes Henricus Van Dal
IPC分类号： H01L21/3205
CPC分类号： H01L21/28097 , H01L29/4908 , H01L29/4975 , H01L29/66545 , H01L29/78
摘要： A method for manufacturing a MOSFET device with a fully silicided (FUSI) gate is described. This method may be used to prevent formation of shorts between the FUSI gate and a contact to a source and/or a drain region. In particular, the method discloses the formation of an expansion volume above a gate dielectric. The volume is designed to substantially contain the fully silicided gate.
摘要翻译：描述了一种用于制造具有完全硅化（FUSI）栅极的MOSFET器件的方法。该方法可以用于防止在FUSI栅极和与源极和/或漏极区域的接触之间形成短路。特别地，该方法公开了在栅极电介质上形成膨胀体积。体积被设计为基本上包含完全硅化的栅极。

2. 发明授权

US07851297B2 Dual workfunction semiconductor device 有权
标题翻译：双功能半导体器件
公开(公告)号：US07851297B2
公开(公告)日：2010-12-14
申请号：US12145413
申请日：2008-06-24
申请人： Stefan Jakschik , Jorge Adrian Kittl , Marcus Johannes Henricus van Dal , Anne Lauwers , Masaaki Niwa
发明人： Stefan Jakschik , Jorge Adrian Kittl , Marcus Johannes Henricus van Dal , Anne Lauwers , Masaaki Niwa
IPC分类号： H01L21/8238
CPC分类号： H01L21/823835 , H01L21/823842 , H01L21/823871
摘要： A dual workfunction semiconductor device which comprises a first and second control electrode comprising a metal-semiconductor compound, e.g. a silicide or a germanide, and a dual workfunction semiconductor device thus obtained are disclosed. In one aspect, the method comprises forming a blocking region for preventing diffusion of metal from the metal-semiconductor compound of the first control electrode to the metal-semiconductor compound of the second control electrode, the blocking region being formed at a location where an interface between the first and second control electrodes is to be formed or is formed. By preventing metal to diffuse from the one to the other control electrode the constitution of the metal-semiconductor compounds of the first and second control electrodes may remain substantially unchanged during e.g. thermal steps in further processing of the device.
摘要翻译：一种双功能半导体器件，其包括第一和第二控制电极，所述第一和第二控制电极包括金属 - 半导体化合物，例如，硅化物或锗化物，以及由此获得的双功能半导体器件。一方面，该方法包括形成用于防止金属从第一控制电极的金属半导体化合物扩散到第二控制电极的金属半导体化合物的阻挡区域，该阻挡区域形成在界面在第一和第二控制电极之间形成或形成。通过防止金属从一个控制电极扩散到另一个控制电极，第一和第二控制电极的金属 - 半导体化合物的结构在例如电极中保持基本不变。进一步处理设备的热步骤。

3. 发明申请

US20090020821A1 DUAL WORKFUNCTION SEMICONDUCTOR DEVICE 有权
标题翻译：双功能半导体器件
公开(公告)号：US20090020821A1
公开(公告)日：2009-01-22
申请号：US12145413
申请日：2008-06-24
申请人： Stefan Jakschik , Jorge Adrian Kittl , Marcus Johannes Henricus van Dal , Anne Lauwers , Masaaki Niwa
发明人： Stefan Jakschik , Jorge Adrian Kittl , Marcus Johannes Henricus van Dal , Anne Lauwers , Masaaki Niwa
IPC分类号： H01L21/8238 , H01L27/092
CPC分类号： H01L21/823835 , H01L21/823842 , H01L21/823871
摘要： A dual workfunction semiconductor device which comprises a first and second control electrode comprising a metal-semiconductor compound, e.g. a silicide or a germanide, and a dual workfunction semiconductor device thus obtained are disclosed. In one aspect, the method comprises forming a blocking region for preventing diffusion of metal from the metal-semiconductor compound of the first control electrode to the metal-semiconductor compound of the second control electrode, the blocking region being formed at a location where an interface between the first and second control electrodes is to be formed or is formed. By preventing metal to diffuse from the one to the other control electrode the constitution of the metal-semiconductor compounds of the first and second control electrodes may remain substantially unchanged during e.g. thermal steps in further processing of the device.
摘要翻译：一种双功能半导体器件，其包括第一和第二控制电极，所述第一和第二控制电极包括金属 - 半导体化合物，例如，硅化物或锗化物，以及由此获得的双功能半导体器件。一方面，该方法包括形成用于防止金属从第一控制电极的金属半导体化合物扩散到第二控制电极的金属半导体化合物的阻挡区域，该阻挡区域形成在界面在第一和第二控制电极之间形成或形成。通过防止金属从一个控制电极扩散到另一个控制电极，第一和第二控制电极的金属 - 半导体化合物的结构在例如电极中保持基本不变。进一步处理设备的热步骤。

4. 发明申请

US20080136030A1 Semiconductor device comprising a doped metal comprising main electrode 审中-公开
标题翻译：半导体器件包括包含主电极的掺杂金属
公开(公告)号：US20080136030A1
公开(公告)日：2008-06-12
申请号：US11977027
申请日：2007-10-23
申请人： Shou-Zen Chang , Jorge Adrian Kittl , HongYu Yu , Anne Lauwers , Anabela Veloso
发明人： Shou-Zen Chang , Jorge Adrian Kittl , HongYu Yu , Anne Lauwers , Anabela Veloso
IPC分类号： H01L23/48 , H01L21/425
CPC分类号： H01L21/28097 , H01L21/265 , H01L21/26506 , H01L21/2807 , H01L21/32155 , H01L21/823835 , H01L21/823842 , H01L29/4975 , H01L29/517 , H01L29/518 , H01L29/665 , H01L29/66545 , H01L29/785 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is provided comprising a main electrode (4) and a dielectric (3) in contact with the main electrode (4), the main electrode (4) comprising a material having a work function and a work function modulating element (6) for modulating the work function of the material of the main electrode (4) towards a predetermined value. The main electrode (4) furthermore comprises a diffusion preventing dopant element (5) for preventing diffusion of the work function modulating element (6) towards and/or into the dielectric (3). Methods for forming such a semiconductor device are also described.
摘要翻译：提供一种半导体器件，包括与主电极（4）接触的主电极（4）和电介质（3），主电极（4）包括具有功函数的材料和功函数调制元件（6）用于将主电极（4）的材料的功函数调节到预定值。主电极（4）还包括用于防止功函数调制元件（6）向电介质（3）和/或电介质（3）扩散的防扩散掺杂剂元件（5）。还描述了形成这种半导体器件的方法。

5. 发明授权

US07759748B2 Semiconductor device with reduced diffusion of workfunction modulating element 有权
标题翻译：减少功函调制元件扩散的半导体器件
公开(公告)号：US07759748B2
公开(公告)日：2010-07-20
申请号：US11977079
申请日：2007-10-23
申请人： HongYu Yu , Shou-Zen Chang , Jorge Adrian Kittl , Anne Lauwers , Anabela Veloso
发明人： HongYu Yu , Shou-Zen Chang , Jorge Adrian Kittl , Anne Lauwers , Anabela Veloso
IPC分类号： H01L29/58
CPC分类号： H01L21/28052 , H01L21/28194 , H01L21/31155 , H01L21/32155 , H01L29/4975 , H01L29/513 , H01L29/517 , H01L29/665 , H01L29/785
摘要： A semiconductor device is disclosed that comprises a fully silicided electrode formed of an alloy of a semiconductor material and a metal, a workfunction modulating element for modulating a workfunction of the alloy, and a dielectric in contact with the fully silicided electrode. At least a part of the dielectric which is in direct contact with the fully silicided electrode comprises a stopping material for substantially preventing the workfunction modulating element from implantation into and/or diffusing towards the dielectric. A method for forming such a semiconductor device is also disclosed.
摘要翻译：公开了一种半导体器件，其包括由半导体材料和金属的合金形成的完全硅化电极，用于调节合金的功函数的功函数调制元件和与完全硅化物电极接触的电介质。与完全硅化电极直接接触的电介质的至少一部分包括用于基本上防止功函数调制元件注入和/或扩散到电介质的止动材料。还公开了一种用于形成这种半导体器件的方法。

6. 发明申请

US20070015334A1 Method for forming a fully silicided gate and devices obtained thereof 有权
标题翻译：用于形成全硅化物栅的方法及其获得的器件
公开(公告)号：US20070015334A1
公开(公告)日：2007-01-18
申请号：US11484439
申请日：2006-07-11
申请人： Jorge Kittl , Anne Lauwers , Anabela Veloso , Anil Kottantharyil , Marcus Van Dal
发明人： Jorge Kittl , Anne Lauwers , Anabela Veloso , Anil Kottantharyil , Marcus Van Dal
IPC分类号： H01L21/336
CPC分类号： H01L21/28097 , H01L29/4908 , H01L29/4975 , H01L29/66545 , H01L29/78
摘要： A method for manufacturing a MOSFET device with a fully silicided (FUSI) gate is described. This method may be used to prevent formation of shorts between the FUSI gate and a contact to a source and/or a drain region. In particular, the method discloses the formation of an expansion volume above a gate dielectric. The volume is designed to substantially contain the fully silicided gate.
摘要翻译：描述了一种用于制造具有完全硅化（FUSI）栅极的MOSFET器件的方法。该方法可以用于防止在FUSI栅极和与源极和/或漏极区域的接触之间形成短路。特别地，该方法公开了在栅极电介质上形成膨胀体积。体积被设计为基本上包含完全硅化的栅极。

7. 发明申请

US20060263961A1 Method for Forming Dual Fully Silicided Gates and Devices with Dual Fully Silicided Gates 审中-公开
标题翻译：用于形成双层全硅酸盐浇口的双层完全硅酸盐浇口和设备的方法
公开(公告)号：US20060263961A1
公开(公告)日：2006-11-23
申请号：US11382986
申请日：2006-05-12
申请人： Jorge Kittl , Anne Lauwers , Anabela Veloso , Anil Kottantharayil , Marcus van Dal
发明人： Jorge Kittl , Anne Lauwers , Anabela Veloso , Anil Kottantharayil , Marcus van Dal
IPC分类号： H01L21/8238
CPC分类号： H01L21/823842 , H01L29/785
摘要： A method for manufacturing CMOS devices with fully silicided (FUSI) gates is described. A metallic gate electrode of an NMOS transistor and a metallic gate electrode of a pMOS transistor have a different work function. The work function of each transistor type is determined by selecting a thickness of a corresponding semiconductor gate electrode and a thermal budget of a first thermal step such that, during silicidation, different silicide phases are obtained on the nMOS and the pMOS transistors. The work function of each type of transistor can be adjusted by selectively doping the semiconductor material prior to the formation of the silicide.
摘要翻译：描述了一种用于制造具有完全硅化（FUSI）栅极的CMOS器件的方法。 NMOS晶体管的金属栅电极和pMOS晶体管的金属栅电极具有不同的功函数。通过选择对应的半导体栅电极的厚度和第一热步骤的热预算来确定每个晶体管类型的功函数，使得在硅化期间，在nMOS和pMOS晶体管上获得不同的硅化物相。可以通过在形成硅化物之前选择性地掺杂半导体材料来调节每种类型的晶体管的功函数。

8. 发明申请

US20080191286A1 Methods for manufacturing a CMOS device with dual dielectric layers 审中-公开
标题翻译：制造具有双电介质层的CMOS器件的方法
公开(公告)号：US20080191286A1
公开(公告)日：2008-08-14
申请号：US11972601
申请日：2008-01-10
申请人： Shou-Zen Chang , Hong Yu Yu , Anabela Veloso , Rita Vos , Stefan Kubicek , Serge Biesemans , Raghunath Singanamalla , Anne Lauwers , Bart Onsia
发明人： Shou-Zen Chang , Hong Yu Yu , Anabela Veloso , Rita Vos , Stefan Kubicek , Serge Biesemans , Raghunath Singanamalla , Anne Lauwers , Bart Onsia
IPC分类号： H01L27/00 , H01L21/8238
CPC分类号： H01L21/823857 , H01L21/82345 , H01L21/823462 , H01L21/823842 , H01L29/785
摘要： The present disclosure provides a dual workfunction semiconductor device and a method for manufacturing a dual workfunction semiconductor device. The method comprises providing a device on a first region and a device on a second region of a substrate. According to embodiments described herein, the method includes providing a dielectric layer onto the first and second region of the substrate, the dielectric layer on the first region being integrally deposited with the dielectric layer on the second region, and providing a gate electrode on top of the dielectric layer on both the first and second regions, the gate electrode on the first region being integrally deposited with the gate electrode on the second region. The method further includes changing the workfunction of the device on the first region by providing a capping layer onto the first region between the dielectric layer and the gate electrode, and changing the workfunction of the device on the second region by including species at the interface between the dielectric layer and the electrode.
摘要翻译：本公开提供了一种双功能半导体器件和用于制造双功能半导体器件的方法。该方法包括在第一区域上提供器件和在衬底的第二区域上提供器件。根据本文所述的实施例，该方法包括在基板的第一和第二区域上提供介电层，第一区域上的电介质层与第二区域上的电介质层整体沉积，并且在所述第一区域和所述第二区域上的所述电介质层，所述第一区域上的所述栅电极与所述第二区域上的所述栅极电极整体地沉积。该方法还包括通过在介电层和栅电极之间的第一区域上设置覆盖层来改变第一区域上的器件的功函数，以及通过在第二区域上的界面处包括物质来改变第二区域上的器件的功函数介电层和电极。

9. 发明申请

US20080105933A1 Method for forming a semiconductor device and semiconductor device thus obtained 有权
标题翻译：用于形成如此获得的半导体器件和半导体器件的方法
公开(公告)号：US20080105933A1
公开(公告)日：2008-05-08
申请号：US11977079
申请日：2007-10-23
申请人： HongYu Yu , Shou-Zen Chang , Jorge Kittl , Anne Lauwers , Anabela Veloso
发明人： HongYu Yu , Shou-Zen Chang , Jorge Kittl , Anne Lauwers , Anabela Veloso
IPC分类号： H01L29/78 , H01L21/28
CPC分类号： H01L21/28052 , H01L21/28194 , H01L21/31155 , H01L21/32155 , H01L29/4975 , H01L29/513 , H01L29/517 , H01L29/665 , H01L29/785
摘要： A semiconductor device is disclosed that comprises a fully silicided electrode formed of an alloy of a semiconductor material and a metal, a workfunction modulating element for modulating a workfunction of the alloy, and a dielectric in contact with the fully silicided electrode. At least a part of the dielectric which is in direct contact with the fully silicided electrode comprises a stopping material for substantially preventing the workfunction modulating element from implantation into and/or diffusing towards the dielectric. A method for forming such a semiconductor device is also disclosed.
摘要翻译：公开了一种半导体器件，其包括由半导体材料和金属的合金形成的完全硅化电极，用于调节合金的功函数的功函数调制元件和与完全硅化物电极接触的电介质。与完全硅化电极直接接触的电介质的至少一部分包括用于基本上防止功函数调制元件注入和/或扩散到电介质的止动材料。还公开了一种用于形成这种半导体器件的方法。

10. 发明申请

US20080057685A1 METHOD FOR FORMING DOPED METAL-SEMICONDUCTOR COMPOUND REGIONS 审中-公开
标题翻译：形成金属半导体化合物区域的方法
公开(公告)号：US20080057685A1
公开(公告)日：2008-03-06
申请号：US11830735
申请日：2007-07-30
申请人： Bartlomiej Pawlak , Anne Lauwers
发明人： Bartlomiej Pawlak , Anne Lauwers
IPC分类号： H01L21/425
CPC分类号： H01L21/26506 , H01L21/26513 , H01L21/28518 , H01L21/324 , H01L29/6659 , H01L29/7833 , H01L29/7845 , H01L29/7848
摘要： A method for forming doped metal-semiconductor compound regions in a substrate is disclosed. In one aspect, a method for forming silicide regions in a substrate comprises partially regrowing an upper amorphous region on top of a crystalline part of the substrate, after having doped the upper amorphous region, to form a regrown region, thereby leaving a remaining upper amorphous region in between the regrown region and the major surface of the substrate. The remaining upper amorphous region is used for forming the metal-semiconductor compound.
摘要翻译：公开了一种在衬底中形成掺杂的金属 - 半导体化合物区域的方法。在一个方面，用于在衬底中形成硅化物区域的方法包括在掺杂上部无定形区域之后，在衬底的晶体部分的顶部上部分地再生上部非晶区域，以形成再生长区域，从而留下剩余的上部无定形区域重新生长区域和基底的主表面之间的区域。剩余的上部非晶区域用于形成金属 - 半导体化合物。

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