专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07851297B2 Dual workfunction semiconductor device 有权
标题翻译：双功能半导体器件
公开(公告)号：US07851297B2
公开(公告)日：2010-12-14
申请号：US12145413
申请日：2008-06-24
申请人： Stefan Jakschik , Jorge Adrian Kittl , Marcus Johannes Henricus van Dal , Anne Lauwers , Masaaki Niwa
发明人： Stefan Jakschik , Jorge Adrian Kittl , Marcus Johannes Henricus van Dal , Anne Lauwers , Masaaki Niwa
IPC分类号： H01L21/8238
CPC分类号： H01L21/823835 , H01L21/823842 , H01L21/823871
摘要： A dual workfunction semiconductor device which comprises a first and second control electrode comprising a metal-semiconductor compound, e.g. a silicide or a germanide, and a dual workfunction semiconductor device thus obtained are disclosed. In one aspect, the method comprises forming a blocking region for preventing diffusion of metal from the metal-semiconductor compound of the first control electrode to the metal-semiconductor compound of the second control electrode, the blocking region being formed at a location where an interface between the first and second control electrodes is to be formed or is formed. By preventing metal to diffuse from the one to the other control electrode the constitution of the metal-semiconductor compounds of the first and second control electrodes may remain substantially unchanged during e.g. thermal steps in further processing of the device.
摘要翻译：一种双功能半导体器件，其包括第一和第二控制电极，所述第一和第二控制电极包括金属 - 半导体化合物，例如，硅化物或锗化物，以及由此获得的双功能半导体器件。一方面，该方法包括形成用于防止金属从第一控制电极的金属半导体化合物扩散到第二控制电极的金属半导体化合物的阻挡区域，该阻挡区域形成在界面在第一和第二控制电极之间形成或形成。通过防止金属从一个控制电极扩散到另一个控制电极，第一和第二控制电极的金属 - 半导体化合物的结构在例如电极中保持基本不变。进一步处理设备的热步骤。

2. 发明申请

US20090020821A1 DUAL WORKFUNCTION SEMICONDUCTOR DEVICE 有权
标题翻译：双功能半导体器件
公开(公告)号：US20090020821A1
公开(公告)日：2009-01-22
申请号：US12145413
申请日：2008-06-24
申请人： Stefan Jakschik , Jorge Adrian Kittl , Marcus Johannes Henricus van Dal , Anne Lauwers , Masaaki Niwa
发明人： Stefan Jakschik , Jorge Adrian Kittl , Marcus Johannes Henricus van Dal , Anne Lauwers , Masaaki Niwa
IPC分类号： H01L21/8238 , H01L27/092
CPC分类号： H01L21/823835 , H01L21/823842 , H01L21/823871
摘要： A dual workfunction semiconductor device which comprises a first and second control electrode comprising a metal-semiconductor compound, e.g. a silicide or a germanide, and a dual workfunction semiconductor device thus obtained are disclosed. In one aspect, the method comprises forming a blocking region for preventing diffusion of metal from the metal-semiconductor compound of the first control electrode to the metal-semiconductor compound of the second control electrode, the blocking region being formed at a location where an interface between the first and second control electrodes is to be formed or is formed. By preventing metal to diffuse from the one to the other control electrode the constitution of the metal-semiconductor compounds of the first and second control electrodes may remain substantially unchanged during e.g. thermal steps in further processing of the device.
摘要翻译：一种双功能半导体器件，其包括第一和第二控制电极，所述第一和第二控制电极包括金属 - 半导体化合物，例如，硅化物或锗化物，以及由此获得的双功能半导体器件。一方面，该方法包括形成用于防止金属从第一控制电极的金属半导体化合物扩散到第二控制电极的金属半导体化合物的阻挡区域，该阻挡区域形成在界面在第一和第二控制电极之间形成或形成。通过防止金属从一个控制电极扩散到另一个控制电极，第一和第二控制电极的金属 - 半导体化合物的结构在例如电极中保持基本不变。进一步处理设备的热步骤。

3. 发明授权

US09199536B2 On-vehicle display device and on-vehicle display program 有权
标题翻译：车载显示设备和车载显示程序
公开(公告)号：US09199536B2
公开(公告)日：2015-12-01
申请号：US12675457
申请日：2008-08-28
申请人： Takahiko Murano , Kunihiko Toyofuku , Takeshi Tottori , Makoto Inomata , Masaaki Niwa , Naoyuki Aoki
发明人： Takahiko Murano , Kunihiko Toyofuku , Takeshi Tottori , Makoto Inomata , Masaaki Niwa , Naoyuki Aoki
IPC分类号： H04N7/18 , B60K35/00
CPC分类号： B60K35/00 , B60K2350/106 , B60K2350/906 , B60K2350/962 , B60R2300/106 , B60R2300/207 , B60R2300/302 , B60R2300/306 , B60R2300/8053 , Y02T10/84
摘要： An on-vehicle display device 1 displays a video around a vehicle and travel information of the vehicle on a single display unit 20. The on-vehicle display device 1 includes video display enable/disable input units 11, 12, 13, and 14 inputting display enable/disable of the video around the vehicle, display modification units 30 and 40 modifying the display size of each of a video display section and a travel information display section on the basis of the input video display enable/disable, and an input prediction unit 30 predicting input of display enable/disable of the video around the vehicle. Even when video display disable is input from a video display enable/disable input unit, if the input prediction unit 30 predicts input of video display enable, the display modification units 30 and 40 do not modify the display size of each of the video display section and the travel information display section.
摘要翻译：车载显示装置1在单个显示单元20上显示车辆周围的视频和车辆的行驶信息。车载显示装置1包括视频显示使能/禁止输入单元11,12,13和14的输入基于输入视频显示启用/禁用来显示使车辆周围的视频的显示启用/禁用，显示修改单元30和40，其修改视频显示部分和行驶信息显示部分中的每一个的显示大小，以及输入预测单元30预测车辆周围的视频的显示启用/禁用的输入。即使从视频显示使能/禁止输入单元输入视频显示禁止，如果输入预测单元30预测视频显示使能的输入，则显示修改单元30和40不会修改每个视频显示部分的显示大小和旅行信息显示部。

4. 发明申请

US20110215653A1 Energization control apparatus 有权
标题翻译：通电控制装置
公开(公告)号：US20110215653A1
公开(公告)日：2011-09-08
申请号：US12932411
申请日：2011-02-24
申请人： Teruyuki Anjima , Masaaki Niwa , Hiroaki Ikenaga , Takashi Mizutani
发明人： Teruyuki Anjima , Masaaki Niwa , Hiroaki Ikenaga , Takashi Mizutani
IPC分类号： H03K3/017
CPC分类号： B60Q1/00 , Y10T307/865
摘要： An energization control apparatus includes a control portion, a disconnection detecting portion, and a prohibiting portion. The control portion controls energization to a plurality of loads coupled in parallel. The disconnection detecting portion repeatedly or continuously determines whether a supply current to the plurality of loads is less than a threshold value when the control portion energizes the plurality of loads, and the disconnection detecting portion detects a disconnection of a part of the plurality of loads when the supply current is less than the threshold value. The prohibiting portion prohibits a disconnection detection by the disconnection detecting portion for a predetermined period since the control portion starts to energize the plurality of loads, and the prohibiting portion enables the disconnection detection by the disconnection detecting portion after the predetermined period elapses.
摘要翻译：通电控制装置包括控制部分，断开检测部分和禁止部分。控制部分控制对并联耦合的多个负载的通电。当控制部分激励多个负载时，断开检测部分重复或连续地确定对多个负载的供电电流是否小于阈值，并且断开检测部分检测到多个负载的一部分的断开当电源电流小于阈值。禁止部分由于控制部分开始激励多个负载而禁止断开检测部分断开检测一段预定时间段，并且禁止部分能够在经过预定时间之后通过断开检测部分进行断线检测。

5. 发明申请

US20100208072A1 ON-VEHICLE DISPLAY DEVICE AND ON-VEHICLE DISPLAY PROGRAM 有权
标题翻译：车载显示设备和车载显示程序
公开(公告)号：US20100208072A1
公开(公告)日：2010-08-19
申请号：US12675457
申请日：2008-08-28
申请人： Takahiko Murano , Kunihiko Toyofuku , Takeshi Tottori , Makoto Inomata , Masaaki Niwa , Naoyuki Aoki
发明人： Takahiko Murano , Kunihiko Toyofuku , Takeshi Tottori , Makoto Inomata , Masaaki Niwa , Naoyuki Aoki
IPC分类号： H04N7/18 , G09G5/00
CPC分类号： B60K35/00 , B60K2350/106 , B60K2350/906 , B60K2350/962 , B60R2300/106 , B60R2300/207 , B60R2300/302 , B60R2300/306 , B60R2300/8053 , Y02T10/84
摘要： An on-vehicle display device 1 displays a video around a vehicle and travel information of the vehicle on a single display unit 20. The on-vehicle display device 1 includes video display enable/disable input units 11, 12, 13, and 14 inputting display enable/disable of the video around the vehicle, display modification units 30 and 40 modifying the display size of each of a video display section and a travel information display section on the basis of the input video display enable/disable, and an input prediction unit 30 predicting input of display enable/disable of the video around the vehicle. Even when video display disable is input from a video display enable/disable input unit, if the input prediction unit 30 predicts input of video display enable, the display modification units 30 and 40 do not modify the display size of each of the video display section and the travel information display section.
摘要翻译：车载显示装置1在单个显示单元20上显示车辆周围的视频和车辆的行驶信息。车载显示装置1包括视频显示使能/禁止输入单元11,12,13和14的输入基于输入视频显示启用/禁用来显示使车辆周围的视频的显示启用/禁用，显示修改单元30和40，其修改视频显示部分和行驶信息显示部分中的每一个的显示大小，以及输入预测单元30预测车辆周围的视频的显示启用/禁用的输入。即使从视频显示使能/禁止输入单元输入视频显示禁止，如果输入预测单元30预测视频显示使能的输入，则显示修改单元30和40不会修改每个视频显示部分的显示大小和旅行信息显示部。

6. 发明授权

US07554156B2 Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same 失效
标题翻译：具有使用高介电常数栅极绝缘膜的场效应晶体管的半导体器件及其制造方法
公开(公告)号：US07554156B2
公开(公告)日：2009-06-30
申请号：US11254727
申请日：2005-10-21
申请人： Yoshinao Harada , Shigenori Hayashi , Masaaki Niwa
发明人： Yoshinao Harada , Shigenori Hayashi , Masaaki Niwa
IPC分类号： H01L27/088
CPC分类号： H01L21/28229 , H01L21/28185 , H01L21/823807 , H01L21/823814 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： In a method for manufacturing a semiconductor device having an N-channel field effect transistor, the N-channel field effect transistor is formed by a process including the steps of forming a high dielectric constant gate insulating film on a substrate, forming a gate electrode on the high dielectric constant gate insulating film, forming an extension region by introducing N-type impurities into the substrate by using at least the gate electrode as a mask, and forming a pocket region by introducing P-type impurities under the extension region in the substrate by using at least the gate electrode as a mask. An amount of arsenic (As) that is introduced as the N-type impurities is in a range that is equal to or lower than a prescribed value that is determined based on a thickness of the high dielectric constant gate insulating film.
摘要翻译：在制造具有N沟道场效应晶体管的半导体器件的方法中，N沟道场效应晶体管通过以下步骤形成，该方法包括以下步骤：在衬底上形成高介电常数栅极绝缘膜，形成栅电极高介电常数栅极绝缘膜，通过至少使用栅电极作为掩模，将N型杂质引入基板，形成延伸区域，并通过在基板的延伸区域内引入P型杂质形成袋区域至少使用栅电极作为掩模。作为N型杂质而引入的砷（As）的量在等于或低于基于高介电常数栅极绝缘膜的厚度确定的规定值的范围内。

7. 发明授权

US5480492A Method for removing organic or inorganic contaminant from silicon substrate surface 失效
标题翻译：从硅衬底表面去除有机或无机污染物的方法
公开(公告)号：US5480492A
公开(公告)日：1996-01-02
申请号：US136197
申请日：1993-10-15
申请人： Masaharu Udagawa , Juro Yasui , Masaaki Niwa , Yoshihiko Hirai , Kenji Okada , Kiyoshi Morimoto , Koichiro Yuki
发明人： Masaharu Udagawa , Juro Yasui , Masaaki Niwa , Yoshihiko Hirai , Kenji Okada , Kiyoshi Morimoto , Koichiro Yuki
IPC分类号： H01L21/302 , H01L21/304 , H01L21/306 , C23G5/00 , B44C1/22
CPC分类号： H01L21/02046
摘要： For removing an unnecessary substance on a silicon substrate surface, a temperature of the unnecessary substance on the silicon substrate surface is not less than 750.degree. C. when the unnecessary substance is exposed to a gas including ozone.
摘要翻译：为了除去硅衬底表面上的不需要的物质，当不需要的物质暴露于包括臭氧的气体时，硅衬底表面上的不必要物质的温度不低于750℃。

8. 发明授权

US5422306A Method of forming semiconductor hetero interfaces 失效
标题翻译：形成半导体异质界面的方法
公开(公告)号：US5422306A
公开(公告)日：1995-06-06
申请号：US990702
申请日：1992-12-15
申请人： Masaaki Niwa , Masaharu Udagawa , Yoshihiko Hirai , Juurou Yasui
发明人： Masaaki Niwa , Masaharu Udagawa , Yoshihiko Hirai , Juurou Yasui
IPC分类号： H01L27/04 , H01L21/02 , H01L21/30 , H01L21/302 , H01L21/306 , H01L21/336 , H01L21/822 , H01L29/04 , H01L29/06 , H01L29/12 , H01L29/78 , H01L21/20
CPC分类号： H01L29/125 , B82Y10/00 , H01L21/30 , H01L21/306 , H01L21/3247 , H01L28/40 , H01L29/045 , Y10S148/014 , Y10S148/118 , Y10S438/974
摘要： A method is disclosed of forming semiconductor hetero interfaces that will contribute to the performance improvement of devices having semiconductor hetero interfaces such as MOS transistors, quantum devices, capacitors and the like. The method comprises the steps of making the surface of a semiconductor substrate clean and flat in terms of atomic level by heating said semiconductor substrate in vacuum to a temperature at which reconstruction of the surface atoms of said semiconductor substrate takes place, then forming a structural buffer layer such as a native oxide layer and the like on said semiconductor substrate surface after the temperature of said semiconductor substrate was lowered to room temperature and finally subjecting the semiconductor substrate with said structural buffer layer formed on its surface to a thermal treatment performed in certain specified temperature and atmosphere. Accordingly, the semiconductor substrate surface becomes smooth in terms of atomic level and an ultra smooth semiconductor interface is formed.
摘要翻译：公开了一种形成半导体异质界面的方法，这将有助于具有诸如MOS晶体管，量子器件，电容器等的半导体异质界面的器件的性能改进。该方法包括以下步骤：通过在真空中将所述半导体衬底加热到发生所述半导体衬底的表面原子的重建的温度，使原子水平的表面清洁和平坦，然后形成结构缓冲液在所述半导体衬底的温度降低到室温之后，在所述半导体衬底表面上的诸如自然氧化物层等的层，最后对形成在其表面上的所述结构缓冲层进行半导体衬底的热处理，温度和气氛。因此，半导体衬底表面在原子水平方面变得平滑，并且形成超平滑的半导体界面。

9. 发明授权

US5347140A Resonant electron transfer device 失效
标题翻译：共振电子转移装置
公开(公告)号：US5347140A
公开(公告)日：1994-09-13
申请号：US935988
申请日：1992-08-27
申请人： Yoshihiko Hirai , Kiyoshi Morimoto , Yasuaki Terui , Atsuo Wada , Kenji Okada , Juro Yasui , Masaaki Niwa
发明人： Yoshihiko Hirai , Kiyoshi Morimoto , Yasuaki Terui , Atsuo Wada , Kenji Okada , Juro Yasui , Masaaki Niwa
IPC分类号： H01L29/768 , H01L29/88
CPC分类号： B82Y30/00 , B82Y10/00 , H01L29/768
摘要： A resonant electron transfer device includes a plurality of units each of which has of at least one one-dimensional quantum wire having a quantum well elongated in a direction, a zero-dimensional quantum dot having a base quantization level higher than that of the one-dimensional quantum wire an electrode for controlling respective internal levels of the quantum wire and dot wherein the quantum wire and dot forming one unit is connected via a potential barrier capable of exhibiting a tunnel effect therebetween.
摘要翻译：共振电子转移装置包括多个单元，每个单元具有至少一个一维量子线，该量子线具有在一个方向上很长的量子阱，零量子点的基本量化级别高于单向量子线，尺寸量子线，用于控制量子线和点的各个内部电平的电极，其中量子线和形成一个单元的点通过能够在其间呈现隧道效应的势垒连接。

10. 发明授权

US08400099B2 Meter system with indicator for vehicle 有权
标题翻译：带车辆指示器的仪表系统
公开(公告)号：US08400099B2
公开(公告)日：2013-03-19
申请号：US12925698
申请日：2010-10-27
申请人： Hideyuki Nakane , Masaaki Niwa , Takashi Mizutani , Hironori Watarai , Teruyuki Anjima
发明人： Hideyuki Nakane , Masaaki Niwa , Takashi Mizutani , Hironori Watarai , Teruyuki Anjima
IPC分类号： H02P8/00
CPC分类号： B60K37/02 , B60K2350/302 , B60K2350/408 , G01P1/08 , G01R7/06
摘要： A meter system includes: an indicator including a pointer, a step motor, a stopper mechanism and a driving controller; and a flasher function unit including a flasher switch, a flasher and a flasher controller. The driving controller has: a stopper position detection operation executing element for executing a pointer moving away operation when a stopper position detection operation executing condition is satisfied and for executing a voltage detection type zero point stopper position detection operation when the executing condition is satisfied, and the flasher switch does not turn on and off, and a zero point return enforcement type zero point stopper position detection operation when the executing condition is satisfied, and the flasher switch turns on and off; a zero point setting element; and an applying element for applying the driving signal having the zero point.
摘要翻译：仪表系统包括：指示器，包括指针，步进电机，止动机构和驱动控制器; 以及包括闪光器开关，闪光器和闪光器控制器的闪光器功能单元。驱动控制器具有：当满足停止位置检测操作执行条件时执行指针移动操作的停止位置检测操作执行元件，并且当满足执行条件时执行电压检测型零点停止位置检测操作;以及闪光灯开关不接通和断开，并且当执行条件满足时，零点返回强制型零点停止位置检测操作，并且闪光器开关导通和关断; 零点设置元素; 以及用于施加具有零点的驱动信号的施加元件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式