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1. 发明授权

US07205623B2 Image sensor and method of manufacturing same 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US07205623B2
公开(公告)日：2007-04-17
申请号：US11229764
申请日：2005-09-20
申请人： Jong-Wook Hong , Jong-Cheol Shin
发明人： Jong-Wook Hong , Jong-Cheol Shin
IPC分类号： H01L31/0232
CPC分类号： H01L27/14685 , H01L27/14623 , H01L27/1463
摘要： An image sensor includes a photodiode formed in substrate, an insulating interlayer structure formed on the substrate, a metal structure formed in the insulating interlayer structure, a dummy pattern formed on the insulating interlayer structure, and a light-shielding layer pattern enclosing the dummy pattern. The dummy pattern is at least partially overlapped by the metal structure and the light-shielding layer pattern is at least partially overlapped by the photodiode.
摘要翻译：图像传感器包括形成在基板中的光电二极管，形成在基板上的绝缘层间结构，形成在绝缘层间结构中的金属结构，形成在绝缘层间结构上的虚设图案，以及包围虚设图案的遮光层图案。虚设图案至少部分地被金属结构重叠，并且遮光层图案至少部分地被光电二极管重叠。

2. 发明申请

US20060060899A1 Image sensor and method of manufacturing same 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US20060060899A1
公开(公告)日：2006-03-23
申请号：US11229764
申请日：2005-09-20
申请人： Jong-Wook Hong , Jong-Cheol Shin
发明人： Jong-Wook Hong , Jong-Cheol Shin
IPC分类号： H01L21/00 , H01L31/062
CPC分类号： H01L27/14685 , H01L27/14623 , H01L27/1463
摘要： An image sensor includes a photodiode formed in substrate, an insulating interlayer structure formed on the substrate, a metal structure formed in the insulating interlayer structure, a dummy pattern formed on the insulating interlayer structure, and a light-shielding layer pattern enclosing the dummy pattern. The dummy pattern is at least partially overlapped by the metal structure and the light-shielding layer pattern is at least partially overlapped by the photodiode.
摘要翻译：图像传感器包括形成在基板中的光电二极管，形成在基板上的绝缘层间结构，形成在绝缘层间结构中的金属结构，形成在绝缘层间结构上的虚设图案，以及包围虚设图案的遮光层图案。虚设图案至少部分地被金属结构重叠，并且遮光层图案至少部分地被光电二极管重叠。

3. 发明申请

US20070037405A1 Methods of forming metal-insulator-metal (MIM) capacitors with passivation layers on dielectric layers and devices so formed 失效
标题翻译：在绝缘层上形成具有钝化层的金属 - 绝缘体 - 金属（MIM）电容器和如此形成的器件的方法
公开(公告)号：US20070037405A1
公开(公告)日：2007-02-15
申请号：US11413282
申请日：2006-04-28
申请人： Jong-Chae Kim , Duk-Min Yi , Sang-Il Jung , Jong-Wook Hong
发明人： Jong-Chae Kim , Duk-Min Yi , Sang-Il Jung , Jong-Wook Hong
IPC分类号： H01L21/31
CPC分类号： H01L28/40 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming a dielectric layer of a MIM capacitor can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed.
摘要翻译：形成MIM电容器的电介质层的方法可以包括在MIM电容器的电介质层上形成钝化层，以将介电层与上覆的光刻胶图案直接接触。还公开了相关的电容器结构。

4. 发明申请

US20080081396A1 Method of fabricating image sensor having inner lens 有权
标题翻译：制造具有内透镜的图像传感器的方法
公开(公告)号：US20080081396A1
公开(公告)日：2008-04-03
申请号：US11882155
申请日：2007-07-31
申请人： Jong-Wook Hong , Tae-Seok Oh , Duk-Min Yi , Young-Mook Oh , Won-Je Park
发明人： Jong-Wook Hong , Tae-Seok Oh , Duk-Min Yi , Young-Mook Oh , Won-Je Park
IPC分类号： H01L21/00
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14625 , H01L27/14636 , H01L27/14645 , H01L27/14687
摘要： A method of fabricating an image sensor according to example embodiments may include forming a photodiode in a photoelectric conversion region of a substrate and forming an etch stop layer on the substrate. The etch stop layer may be patterned to form an inner lens on the photoelectric conversion region and an etch stop layer pattern on a transistor region of the substrate. A metal interconnection structure may be formed on the inner lens and the etch stop layer pattern. Accordingly, the number of additional processes for fabricating an image sensor may be reduced.
摘要翻译：根据示例性实施例的制造图像传感器的方法可以包括在衬底的光电转换区域中形成光电二极管，并在衬底上形成蚀刻停止层。蚀刻停止层可以被图案化以在光电转换区域上形成内透镜，并且在衬底的晶体管区域上形成蚀刻停止层图案。可以在内透镜和蚀刻停止层图案上形成金属互连结构。因此，可以减少用于制造图像传感器的附加处理的数量。

5. 发明授权

US07875488B2 Method of fabricating image sensor having inner lens 有权
标题翻译：制造具有内透镜的图像传感器的方法
公开(公告)号：US07875488B2
公开(公告)日：2011-01-25
申请号：US11882155
申请日：2007-07-31
申请人： Jong-Wook Hong , Tae-Seok Oh , Duk-Min Yi , Young-Mook Oh , Won-Je Park
发明人： Jong-Wook Hong , Tae-Seok Oh , Duk-Min Yi , Young-Mook Oh , Won-Je Park
IPC分类号： H01L21/00 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14625 , H01L27/14636 , H01L27/14645 , H01L27/14687
摘要： A method of fabricating an image sensor according to example embodiments may include forming a photodiode in a photoelectric conversion region of a substrate and forming an etch stop layer on the substrate. The etch stop layer may be patterned to form an inner lens on the photoelectric conversion region and an etch stop layer pattern on a transistor region of the substrate. A metal interconnection structure may be formed on the inner lens and the etch stop layer pattern. Accordingly, the number of additional processes for fabricating an image sensor may be reduced.
摘要翻译：根据示例性实施例的制造图像传感器的方法可以包括在衬底的光电转换区域中形成光电二极管，并在衬底上形成蚀刻停止层。蚀刻停止层可以被图案化以在光电转换区域上形成内透镜，并且在衬底的晶体管区域上形成蚀刻停止层图案。可以在内透镜和蚀刻停止层图案上形成金属互连结构。因此，可以减少用于制造图像传感器的附加处理的数量。

6. 发明申请

US20070267658A1 Image sensor and methods of fabricating the same 审中-公开
标题翻译：图像传感器及其制造方法
公开(公告)号：US20070267658A1
公开(公告)日：2007-11-22
申请号：US11798391
申请日：2007-05-14
申请人： Jae-Ho Song , Jong-Chae Kim , Jong-Wook Hong , Keo-Sung Park
发明人： Jae-Ho Song , Jong-Chae Kim , Jong-Wook Hong , Keo-Sung Park
IPC分类号： H01L27/10
CPC分类号： H01L27/14643 , H01L27/14609 , H01L27/14632 , H01L27/14687 , H01L27/14689
摘要： An image sensor and methods of fabricating the same are provided. An example method may include forming at least one gate on a substrate, forming first, second and third layers on the at least one gate, first etching the third layer with a first etching process, the second layer configured to be resistant to the first etching process, the first etching process reducing at least a portion of the third layer and exposing at least a portion of the second layer and second etching at least the exposed portion of the second layer with a second etching process other than the first etching process, the first layer configured to be resistant to the second etching process.
摘要翻译：提供了图像传感器及其制造方法。示例性方法可以包括在衬底上形成至少一个栅极，在至少一个栅极上形成第一层，第二层和第三层，首先用第一蚀刻工艺蚀刻第三层，第二层被配置为耐第一蚀刻所述第一蚀刻工艺减少所述第三层的至少一部分并暴露所述第二层的至少一部分，并且用除了所述第一蚀刻工艺之外的第二蚀刻工艺至少蚀刻所述第二层的所述暴露部分，第一层被配置为抵抗第二蚀刻工艺。

7. 发明申请

US20070105360A1 Method of Forming Bump, Method of Forming Image Sensor Using the Method, Semiconductor Chip and the Sensor so Formed 审中-公开
标题翻译：形成凸块的方法，使用该方法形成图像传感器的方法，半导体芯片和如此形成的传感器
公开(公告)号：US20070105360A1
公开(公告)日：2007-05-10
申请号：US11557753
申请日：2006-11-08
申请人： Jong-Wook Hong
发明人： Jong-Wook Hong
IPC分类号： H01L21/44 , H01L23/48
CPC分类号： H01L24/02 , H01L24/11 , H01L24/13 , H01L27/14618 , H01L27/14683 , H01L2224/0401 , H01L2224/1147 , H01L2224/13099 , H01L2224/13144 , H01L2224/13147 , H01L2924/0001 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01058 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/05042 , H01L2924/12043 , H01L2924/30105 , H01L2924/30107 , H01L2924/00014 , H01L2924/00
摘要： A method of forming a bump, a method of forming an image sensor using the method, a semiconductor chip and the sensor so formed. According to a method of forming the bump, a conductive pad is used as a seed layer to form the bump by a plating process. Since the conductive pad is used as a seed layer, it is not necessary to form an additional aluminum pad or seed layer and the manufacturing process is simplified. The conductive pad and the bump are formed of the same materials simplifying the manufacturing a process.
摘要翻译：形成凸块的方法，使用该方法形成图像传感器的方法，半导体芯片和如此形成的传感器。根据形成凸块的方法，使用导电焊盘作为种子层，通过电镀工艺形成凸块。由于导电焊盘用作种子层，因此不需要形成附加的铝焊盘或种子层，并且简化了制造工艺。导电焊盘和凸块由相同的材料形成，简化了制造工艺。

8. 发明申请

US20060199295A1 Image sensor and methods of forming the same 审中-公开
标题翻译：图像传感器及其形成方法
公开(公告)号：US20060199295A1
公开(公告)日：2006-09-07
申请号：US11369474
申请日：2006-03-07
申请人： Jong-Wook Hong , June-Taeg Lee
发明人： Jong-Wook Hong , June-Taeg Lee
IPC分类号： H01L21/00
CPC分类号： H01L27/14687 , H01L27/14632 , H01L27/14636
摘要： A method of forming an image sensor is provided. The method includes forming a protection insulating layer, a lower mold insulating layer and an upper mold insulating layer over a semiconductor substrate in which a plurality of photodiodes are spaced apart from one another. The method further includes forming a dummy pattern contact with the lower mold insulating layer in the upper mold insulating layer, forming a preliminary cavity exposing the lower mold insulating layer contact with the dummy pattern by selectively removing the dummy pattern, and forming a cavity exposing the protection insulating layer over the photodiode by anisotropically etching the exposed lower mold insulating layer.
摘要翻译：提供了一种形成图像传感器的方法。该方法包括在多个光电二极管彼此间隔开的半导体衬底上形成保护绝缘层，下模绝缘层和上模绝缘层。该方法还包括在上模绝缘层中形成与下模绝缘层的虚拟图案接触，通过选择性地去除虚设图案形成暴露下模绝缘层与虚设图案的预备腔，并形成暴露于通过各向异性蚀刻暴露的下模绝缘层在光电二极管上方的保护绝缘层。

9. 发明授权

US08017490B2 Methods of forming metal-insulator-metal (MIM) capacitors with passivation layers on dielectric layers 失效
标题翻译：在介电层上形成具有钝化层的金属 - 绝缘体 - 金属（MIM）电容器的方法
公开(公告)号：US08017490B2
公开(公告)日：2011-09-13
申请号：US12784104
申请日：2010-05-20
申请人： Jong-Chae Kim , Duk-Min Yi , Sang-Il Jung , Jong-Wook Hong
发明人： Jong-Chae Kim , Duk-Min Yi , Sang-Il Jung , Jong-Wook Hong
IPC分类号： H01L21/20
CPC分类号： H01L28/40 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming a dielectric layer of a MIM capacitor can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed.
摘要翻译：形成MIM电容器的电介质层的方法可以包括在MIM电容器的电介质层上形成钝化层，以将介电层与上覆的光刻胶图案直接接触。还公开了相关的电容器结构。

10. 发明申请

US20100224588A1 METHODS OF FORMING METAL-INSULATOR-METAL (MIM) CAPACITORS WITH PASSIVATION LAYERS ON DIELECTRIC LAYERS 失效
标题翻译：在绝缘层上形成钝化层金属绝缘体金属（MIM）电容器的方法
公开(公告)号：US20100224588A1
公开(公告)日：2010-09-09
申请号：US12784104
申请日：2010-05-20
申请人： Jong-Chae Kim , Duk-Min Yi , Sang-Il Jung , Jong-Wook Hong
发明人： Jong-Chae Kim , Duk-Min Yi , Sang-Il Jung , Jong-Wook Hong
IPC分类号： H01B13/00
CPC分类号： H01L28/40 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming a dielectric layer of a MIM capacitor can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed.
摘要翻译：形成MIM电容器的电介质层的方法可以包括在MIM电容器的电介质层上形成钝化层，以将介电层与上覆的光刻胶图案直接接触。还公开了相关的电容器结构。

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