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1. 发明申请

US20080191250A1 Transistor Having Coupling-Preventing Electrode Layer, Fabricating Method Thereof, and Image Sensor Having the Same 失效
标题翻译：具有耦合防止电极层的晶体管，其制造方法和具有相同的图像传感器
公开(公告)号：US20080191250A1
公开(公告)日：2008-08-14
申请号：US11962401
申请日：2007-12-21
申请人： Kang-Bok Lee , Jong-Cheol Shin
发明人： Kang-Bok Lee , Jong-Cheol Shin
IPC分类号： H01L27/146 , H01L29/78 , H01L21/336
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14643 , H01L29/78
摘要： A transistor having an electrode layer that can reduce or prevent a coupling effect, a fabricating method thereof, and an image sensor having the same are provided. The transistor includes a semiconductor substrate and a well of a first conductivity type formed on the semiconductor substrate. A heavily-doped first impurity region of a first conductivity type surrounds an active region defined in the well. Heavily-doped second and third impurity regions of a second conductivity type are spaced apart from each other in the active region an define a channel region interposed therebetween. A gate is formed over the channel region to cross the active region. The gate overlaps at least a portion of the first impurity region and receives a first voltage. An electrode layer is formed between the semiconductor substrate and the gate, such that the electrode layer overlaps a portion of the first impurity region contacting the channel region and receives a second voltage. An insulation layer is formed between the semiconductor substrate and the electrode layer, the semiconductor substrate and the gate, and the electrode layer and the gate. The insulation layer surrounds the electrode layer.
摘要翻译：提供具有可以减少或防止耦合效应的电极层的晶体管，其制造方法和具有该电极层的图像传感器。晶体管包括形成在半导体衬底上的半导体衬底和第一导电类型的阱。第一导电类型的重掺杂的第一杂质区围绕阱中限定的有源区。第二导电类型的重掺杂的第二和第三杂质区域在有源区域中彼此间隔开，限定插入其间的沟道区域。栅极形成在沟道区域上以穿过有源区。栅极与第一杂质区域的至少一部分重叠并接收第一电压。在半导体衬底和栅极之间形成电极层，使得电极层与接触沟道区的第一杂质区的一部分重叠并接收第二电压。在半导体衬底和电极层，半导体衬底和栅极以及电极层和栅极之间形成绝缘层。绝缘层包围电极层。

2. 发明授权

US5334867A Image sensor device with insulation film 失效
标题翻译：具有绝缘膜的图像传感器装置
公开(公告)号：US5334867A
公开(公告)日：1994-08-02
申请号：US59330
申请日：1993-05-11
申请人： Jong-cheol Shin , Heung-kwun Oh
发明人： Jong-cheol Shin , Heung-kwun Oh
IPC分类号： H01L21/28 , H01L21/339 , H01L27/148 , H01L29/51 , H01L27/14
CPC分类号： H01L29/513 , H01L21/28202 , H01L27/148 , H01L29/518 , H01L29/66954 , Y10S148/114 , Y10S257/90
摘要： A charge-coupled device (CCD) is provides having improved charge transfer efficiency. This CCD is a portion of an image sensor and manufactured by first laminating a first oxidation film and a first nitride film one after the other on a semiconductor substrate and then forming a plurality of first gate electrodes on the first nitride film at predetermined intervals apart. A second oxidation film is formed only on an upper surface and along side walls of each of the first gate electrodes. The first nitride film exposed between the first gate electrodes is removed and a second nitride film is formed on the exposed first oxidation film and the second oxidation film. A second gate electrode is then formed on the second nitride film between adjacent first gate electrodes. An image sensor is obtained in which leakage current density between the gate electrodes is reduced and the dielectric characteristic of a gate dielectric film is improved.
摘要翻译：电荷耦合器件（CCD）具有改进的电荷转移效率。该CCD是图像传感器的一部分，其通过首先在半导体衬底上层叠第一氧化膜和第一氮化物膜，然后以预定间隔分开在第一氮化物膜上形成多个第一栅极。仅在每个第一栅电极的上表面和侧壁上形成第二氧化膜。去除在第一栅电极之间露出的第一氮化物膜，并且在暴露的第一氧化膜和第二氧化膜上形成第二氮化物膜。然后在相邻的第一栅电极之间的第二氮化物膜上形成第二栅电极。获得图像传感器，其中栅电极之间的漏电流密度降低，并且栅介质膜的介电特性得到改善。

3. 发明授权

US08748945B2 Image sensors including a gate electrode surrounding a floating diffusion region 有权
标题翻译：图像传感器包括围绕浮动扩散区域的栅电极
公开(公告)号：US08748945B2
公开(公告)日：2014-06-10
申请号：US13367599
申请日：2012-02-07
申请人： Jong-Cheol Shin
发明人： Jong-Cheol Shin
IPC分类号： H01L29/768
CPC分类号： H01L27/14643 , H01L27/14607 , H01L27/14614 , H01L27/14616 , H01L27/14638 , H01L27/1464 , H01L27/14645 , H01L27/14689
摘要： Image sensors are provided. The image sensors may include first and second stacked impurity regions having different conductivity types. The image sensors may also include a floating diffusion region in the first impurity region. The image sensors may further include a transfer gate electrode surrounding the floating diffusion region in the first impurity region. Also, the transfer gate electrode and the floating diffusion region may overlap the second impurity region.
摘要翻译：提供图像传感器。图像传感器可以包括具有不同导电类型的第一和第二堆叠杂质区。图像传感器还可以包括第一杂质区域中的浮动扩散区域。图像传感器还可以包括围绕第一杂质区域中的浮动扩散区域的传输栅极电极。此外，传输栅极电极和浮动扩散区域可以与第二杂质区域重叠。

4. 发明申请

US20120252155A1 METHOD OF IMPLANTING IMPURITIES AND METHOD OF MANUFACTURING A COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) IMAGE SENSOR USING THE SAME 审中-公开
标题翻译：使用相同的方法和制造补充金属氧化物半导体（CMOS）图像传感器的方法
公开(公告)号：US20120252155A1
公开(公告)日：2012-10-04
申请号：US13428792
申请日：2012-03-23
申请人： Sang-Jun CHOI , June-Mo Koo , Duck-Hyung Lee , Jong-Cheol Shin , Yu-Jin Ahn , Eun-Kyung Park , Sun-E Park
发明人： Sang-Jun CHOI , June-Mo Koo , Duck-Hyung Lee , Jong-Cheol Shin , Yu-Jin Ahn , Eun-Kyung Park , Sun-E Park
IPC分类号： H01L31/18 , H01L21/04
CPC分类号： H01L21/2652 , H01L21/2658 , H01L21/268 , H01L27/14632 , H01L27/14683 , H01L31/1872 , Y02E10/50 , Y02P70/521
摘要： In a method of doping impurities, an amorphous layer is formed on a substrate. Impurities are implanted through a top surface of the amorphous layer to form a first doping region at an upper portion of the substrate. The first doping region and the amorphous layer are transformed into a second doping region and a recrystallized layer, respectively, by a laser annealing process. The recrystallized layer is removed.
摘要翻译：在掺杂杂质的方法中，在基板上形成非晶层。通过非晶层的顶表面注入杂质以在衬底的上部形成第一掺杂区。第一掺杂区和非晶层分别通过激光退火工艺转变成第二掺杂区和再结晶层。去除重结晶层。

5. 发明申请

US20120199882A1 Image Sensors Including A Gate Electrode Surrounding A Floating Diffusion Region 有权
标题翻译：包括围绕浮动扩散区域的栅极电极的图像传感器
公开(公告)号：US20120199882A1
公开(公告)日：2012-08-09
申请号：US13367599
申请日：2012-02-07
申请人： Jong-Cheol Shin
发明人： Jong-Cheol Shin
IPC分类号： H01L31/112
CPC分类号： H01L27/14643 , H01L27/14607 , H01L27/14614 , H01L27/14616 , H01L27/14638 , H01L27/1464 , H01L27/14645 , H01L27/14689
摘要： Image sensors are provided. The image sensors may include first and second stacked impurity regions having different conductivity types. The image sensors may also include a floating diffusion region in the first impurity region. The image sensors may further include a transfer gate electrode surrounding the floating diffusion region in the first impurity region. Also, the transfer gate electrode and the floating diffusion region may overlap the second impurity region.
摘要翻译：提供图像传感器。图像传感器可以包括具有不同导电类型的第一和第二堆叠杂质区。图像传感器还可以包括第一杂质区域中的浮动扩散区域。图像传感器还可以包括围绕第一杂质区域中的浮动扩散区域的传输栅极电极。此外，传输栅极电极和浮动扩散区域可以与第二杂质区域重叠。

6. 发明申请

US20120077301A1 IMAGE SENSOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：图像传感器及其制作方法
公开(公告)号：US20120077301A1
公开(公告)日：2012-03-29
申请号：US13239457
申请日：2011-09-22
申请人： Yu-Jin Ahn , Duck-Hyung Lee , Jong-Cheol Shin , Chang-Rok Moon , Sang-Jun Choi , Eun-Kyung Park
发明人： Yu-Jin Ahn , Duck-Hyung Lee , Jong-Cheol Shin , Chang-Rok Moon , Sang-Jun Choi , Eun-Kyung Park
IPC分类号： H01L31/18
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/1463
摘要： An image sensor and a method for fabricating the image sensor are provided. The method for fabricating the image sensor includes forming a first insulating layer on a semiconductor epitaxial layer having multiple pixel regions; patterning a portion of the semiconductor epitaxial layer and the first insulating layer in a boundary region between the pixel regions to form a trench; forming a buried insulating layer on the first insulating layer, filling the trench, the buried insulating layer having a planar top surface; forming a second insulating layer on the buried insulating layer; forming a first mask pattern on the second insulating layer, the first mask pattern defining an opening overlapping the trench; and performing an ion implantation process using the first mask pattern as an ion implantation mask to form a first type potential barrier region in a bottom of the trench.
摘要翻译：提供了一种用于制造图像传感器的图像传感器和方法。制造图像传感器的方法包括在具有多个像素区域的半导体外延层上形成第一绝缘层; 在像素区域之间的边界区域中构图半导体外延层和第一绝缘层的一部分以形成沟槽; 在所述第一绝缘层上形成掩埋绝缘层，填充所述沟槽，所述掩埋绝缘层具有平坦的顶表面; 在所述掩埋绝缘层上形成第二绝缘层; 在所述第二绝缘层上形成第一掩模图案，所述第一掩模图案限定与所述沟槽重叠的开口; 以及使用所述第一掩模图案作为离子注入掩模进行离子注入处理，以在所述沟槽的底部形成第一类型的势垒区域。

7. 发明授权

US07517714B2 Image sensors for reducing dark current and methods of fabricating the same 有权
标题翻译：用于减少暗电流的图像传感器及其制造方法
公开(公告)号：US07517714B2
公开(公告)日：2009-04-14
申请号：US11839015
申请日：2007-08-15
申请人： Chan Park , Jong-cheol Shin
发明人： Chan Park , Jong-cheol Shin
IPC分类号： H01L21/00
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14683 , H01L27/14689 , H01L31/035281
摘要： An image sensor includes a semiconductor substrate of a first conductivity type, a photodiode of a second conductivity type located in the substrate, a hole accumulated device (HAD) region of the first conductivity type located over the photodiode, a thin surface diffusion region formed on the surface of the HAD region, and a transfer gate located over the surface of the substrate adjacent the HAD region. The image sensor further includes a first channel region of the first conductivity type located in the substrate and aligned below the transfer gate, a second channel region of the second conductivity type located in the substrate between said transfer gate and the first channel region, and an floating diffusion region which is located in the substrate and which electrically contacts the second channel region.
摘要翻译：图像传感器包括第一导电类型的半导体衬底，位于衬底中的第二导电类型的光电二极管，位于光电二极管上方的第一导电类型的空穴累积装置（HAD）区域，形成在 HAD区域的表面，以及位于邻近于HAD区域的衬底表面上的传输门。图像传感器还包括第一导电类型的第一沟道区域，位于衬底中并对准传输栅极下方，第二导电类型的第二沟道区位于衬底之间，位于所述传输门和第一沟道区之间，浮动扩散区，其位于衬底中并与第二沟道区电接触。

8. 发明申请

US20080224190A1 IMAGE SENSOR AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：图像传感器及其制作方法
公开(公告)号：US20080224190A1
公开(公告)日：2008-09-18
申请号：US12046965
申请日：2008-03-12
申请人： Jong-Min Lee , Jong-Cheol Shin , Doo-Cheol Park , Jeong-Hoon Koo , Hee-Yong Lim
发明人： Jong-Min Lee , Jong-Cheol Shin , Doo-Cheol Park , Jeong-Hoon Koo , Hee-Yong Lim
IPC分类号： H01L31/113 , H01L21/00
CPC分类号： H01L27/14609 , H01L27/1463 , H01L27/14689
摘要： An image sensor with sufficient photoelectric conversion capacity and enhanced reliability and a method of fabricating the same, in which the image sensor includes a bare substrate; an epitaxial layer disposed on the bare substrate and including a first impurity distribution region of a first conductivity type, which is formed on the bare substrate, and a second impurity distribution region of a second conductivity type, which is formed on the first impurity distribution region; and a charge collection well formed within the epitaxial layer and at least partially doped with third impurities of the second conductivity type, wherein the charge collection well occupies the first impurity distribution region and the second impurity distribution region and represents the second conductivity type as a whole.
摘要翻译：具有足够的光电转换能力和增强的可靠性的图像传感器及其制造方法，其中图像传感器包括裸衬底; 外延层，设置在所述裸基板上，并且包括形成在所述裸基板上的第一导电类型的第一杂质分布区域和形成在所述第一杂质分布区域上的第二导电类型的第二杂质分布区域 ; 以及在所述外延层内形成并且至少部分地掺杂有所述第二导电类型的第三杂质的电荷收集阱，其中所述电荷收集阱占据所述第一杂质分布区域和所述第二杂质分布区域，并且表示作为整体的第二导电类型。

9. 发明申请

US20080081393A1 IMAGE SENSORS FOR REDUCING DARK CURRENT AND METHODS OF FABRICATING THE SAME 有权
标题翻译：用于减少深色电流的图像传感器及其制作方法
公开(公告)号：US20080081393A1
公开(公告)日：2008-04-03
申请号：US11839015
申请日：2007-08-15
申请人： Chan PARK , Jong-cheol SHIN
发明人： Chan PARK , Jong-cheol SHIN
IPC分类号： H01L31/18
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14683 , H01L27/14689 , H01L31/035281
摘要： An image sensor includes a semiconductor substrate of a first conductivity type, a photodiode of a second conductivity type located in the substrate, a hole accumulated device (HAD) region of the first conductivity type located over the photodiode, a thin surface diffusion region formed on the surface of the HAD region, and a transfer gate located over the surface of the substrate adjacent the HAD region. The image sensor further includes a first channel region of the first conductivity type located in the substrate and aligned below the transfer gate, a second channel region of the second conductivity type located in the substrate between said transfer gate and the first channel region, and an floating diffusion region which is located in the substrate and which electrically contacts the second channel region.
摘要翻译：图像传感器包括第一导电类型的半导体衬底，位于衬底中的第二导电类型的光电二极管，位于光电二极管上方的第一导电类型的空穴累积装置（HAD）区域，形成在 HAD区域的表面，以及位于邻近于HAD区域的衬底表面上的传输门。图像传感器还包括第一导电类型的第一沟道区域，位于衬底中并对准传输栅极下方，第二导电类型的第二沟道区位于衬底之间，位于所述传输门和第一沟道区之间，浮动扩散区，其位于衬底中并与第二沟道区电接触。

10. 发明申请

US20050280054A1 Image sensors for reducing dark current and methods of fabricating the same 有权
标题翻译：用于减少暗电流的图像传感器及其制造方法
公开(公告)号：US20050280054A1
公开(公告)日：2005-12-22
申请号：US11143783
申请日：2005-06-03
申请人： Chan Park , Jong-cheol Shin
发明人： Chan Park , Jong-cheol Shin
IPC分类号： H01L21/00 , H01L27/146 , H01L31/0352 , H01L31/062
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14683 , H01L27/14689 , H01L31/035281
摘要： An image sensor includes a semiconductor substrate of a first conductivity type, a photodiode of a second conductivity type located in the substrate, a hole accumulated device (HAD) region of the first conductivity type located over the photodiode, a thin surface diffusion region formed on the surface of the HAD region, and a transfer gate located over the surface of the substrate adjacent the HAD region. The image sensor further includes a first channel region of the first conductivity type located in the substrate and aligned below the transfer gate, a second channel region of the second conductivity type located in the substrate between said transfer gate and the first channel region, and an floating diffusion region which is located in the substrate and which electrically contacts the second channel region.
摘要翻译：图像传感器包括第一导电类型的半导体衬底，位于衬底中的第二导电类型的光电二极管，位于光电二极管上方的第一导电类型的空穴累积装置（HAD）区域，形成在 HAD区域的表面，以及位于邻近于HAD区域的衬底表面上的传输门。图像传感器还包括第一导电类型的第一沟道区域，位于衬底中并对准传输栅极下方，第二导电类型的第二沟道区位于衬底之间，位于所述传输门和第一沟道区之间，浮动扩散区，其位于衬底中并与第二沟道区电接触。

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