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1. 发明授权

US09357142B2 Image sensor and image processing system including subpixels having a transfer circuit, comparator and counter for outputting the count value as the subpixel signal 有权
标题翻译：图像传感器和图像处理系统包括具有传送电路，比较器和计数器的子像素，用于输出计数值作为子像素信号
公开(公告)号：US09357142B2
公开(公告)日：2016-05-31
申请号：US14051802
申请日：2013-10-11
申请人： Tae Chan Kim , Min Ho Kim , Dong Ki Min , Sang Chul Sul , Tae Seok Oh , Kwang Hyun Lee , Tae Yon Lee , Jung Hoon Jung , Young Gu Jin
发明人： Tae Chan Kim , Min Ho Kim , Dong Ki Min , Sang Chul Sul , Tae Seok Oh , Kwang Hyun Lee , Tae Yon Lee , Jung Hoon Jung , Young Gu Jin
IPC分类号： H04N5/335 , H04N5/378
CPC分类号： H04N5/335 , H04N5/378
摘要： An image sensor includes a pixel array and a row driver block. The pixel array includes a plurality of subpixel groups, each including a plurality of subpixels. Each of the plurality of subpixels is configured to generate a subpixel signal corresponding to photocharge accumulated in response to a photon. The row driver block is configured to generate a first control signal to control the subpixels included in each of the plurality of subpixel groups to accumulate the photocharge in parallel from a first time point to a second time point.
摘要翻译：图像传感器包括像素阵列和行驱动器块。像素阵列包括多个子像素组，每个子像素组包括多个子像素。多个子像素中的每一个被配置为产生对应于响应于光子累积的光电荷的子像素信号。行驱动块被配置为生成第一控制信号，以控制包括在多个子像素组中的每个子像素组中的子像素，以从第一时间点到第二时间点并行地累积光电荷。

2. 发明申请

US20090096901A1 Image sensor 审中-公开
标题翻译：图像传感器
公开(公告)号：US20090096901A1
公开(公告)日：2009-04-16
申请号：US12081041
申请日：2008-04-10
申请人： Jeong-Hoon Bae , Tae-Seok Oh
发明人： Jeong-Hoon Bae , Tae-Seok Oh
IPC分类号： H04N5/335
CPC分类号： H04N5/3745
摘要： An image sensor may include a first common column line and/or at least one first pixel. The at least one first pixel may be connected to the first common column line. The at least one first pixel may include a first photoelectron conversion region, a first transfer gate, a first overflow gate, and/or a first overflow drain region. The first transfer gate may be between the first photoelectron conversion region and the first common column line. The first overflow gate may be spaced from the first transfer gate. The first photoelectron conversion region may be between the first overflow gate and the first transfer gate. The first overflow drain region may be on an opposite side of the first photoelectron conversion region with respect to the first transfer gate. The first overflow gate may be between the first overflow drain region and the first photoelectron conversion region.
摘要翻译：图像传感器可以包括第一公共列线和/或至少一个第一像素。至少一个第一像素可以连接到第一公共列线。所述至少一个第一像素可以包括第一光电子转换区域，第一传输门极，第一溢出栅极和/或第一溢出漏极区域。第一传输栅极可以在第一光电转换区域和第一公共列线之间。第一溢流门可以与第一传输门间隔开。第一光电转换区域可以在第一溢出栅极和第一传输栅极之间。第一溢出漏极区域可以相对于第一传输栅极位于第一光电子转换区域的相反侧。第一溢出栅极可以在第一溢出漏极区域和第一光电子转换区域之间。

3. 发明申请

US20080081396A1 Method of fabricating image sensor having inner lens 有权
标题翻译：制造具有内透镜的图像传感器的方法
公开(公告)号：US20080081396A1
公开(公告)日：2008-04-03
申请号：US11882155
申请日：2007-07-31
申请人： Jong-Wook Hong , Tae-Seok Oh , Duk-Min Yi , Young-Mook Oh , Won-Je Park
发明人： Jong-Wook Hong , Tae-Seok Oh , Duk-Min Yi , Young-Mook Oh , Won-Je Park
IPC分类号： H01L21/00
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14625 , H01L27/14636 , H01L27/14645 , H01L27/14687
摘要： A method of fabricating an image sensor according to example embodiments may include forming a photodiode in a photoelectric conversion region of a substrate and forming an etch stop layer on the substrate. The etch stop layer may be patterned to form an inner lens on the photoelectric conversion region and an etch stop layer pattern on a transistor region of the substrate. A metal interconnection structure may be formed on the inner lens and the etch stop layer pattern. Accordingly, the number of additional processes for fabricating an image sensor may be reduced.
摘要翻译：根据示例性实施例的制造图像传感器的方法可以包括在衬底的光电转换区域中形成光电二极管，并在衬底上形成蚀刻停止层。蚀刻停止层可以被图案化以在光电转换区域上形成内透镜，并且在衬底的晶体管区域上形成蚀刻停止层图案。可以在内透镜和蚀刻停止层图案上形成金属互连结构。因此，可以减少用于制造图像传感器的附加处理的数量。

4. 发明授权

US07342271B2 CMOS image sensor providing uniform pixel exposure and method of fabricating same 有权
标题翻译：提供均匀像素曝光的CMOS图像传感器及其制造方法
公开(公告)号：US07342271B2
公开(公告)日：2008-03-11
申请号：US11274855
申请日：2005-11-16
申请人： Young-Hoon Park , Tae-Seok Oh
发明人： Young-Hoon Park , Tae-Seok Oh
IPC分类号： H01L27/148 , H01L19/768 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14643 , H01L27/14609 , H01L27/14654 , H01L27/14689
摘要： An CMOS image sensor includes a photodiode region generating electrical charges in response to incident light received thereat. In one example, the CMOS image sensor further includes first and second transfer gates adapted to prevent or substantially prevent the electrical charges from overflowing into a floating diffusion region or a storage diffusion region located on opposite sides of the photodiode region. In this example, a read diffusion region is formed in the semiconductor substrate on an opposite side of the storage diffusion region relative to the photodiode region and a reset diffusion region is formed in the semiconductor substrate on an opposite side of the floating diffusion region relative to the photodiode region. The read diffusion region may be electrically connected to the floating diffusion region by a connection line.
摘要翻译： CMOS图像传感器包括响应于在其接收的入射光而产生电荷的光电二极管区域。在一个示例中，CMOS图像传感器还包括适于防止或基本上防止电荷溢出到位于光电二极管区域的相对侧上的浮动扩散区域或存储扩散区域的第一和第二传输门。在这个例子中，在半导体衬底中在相对于光电二极管区域的存储扩散区的相对侧上形成读扩散区，并且在浮动扩散区相对侧的半导体衬底中形成复位扩散区光电二极管区域。读扩散区域可以通过连接线电连接到浮动扩散区域。

5. 发明申请

US20060157761A1 Image sensor with self-boosting and methods of operating and fabricating the same 有权
标题翻译：具有自增强功能的图像传感器及其操作和制造方法
公开(公告)号：US20060157761A1
公开(公告)日：2006-07-20
申请号：US11335925
申请日：2006-01-18
申请人： Young-Hoon Park , Won-Je Park , Tae-Seok Oh , Jae-Ho Song
发明人： Young-Hoon Park , Won-Je Park , Tae-Seok Oh , Jae-Ho Song
IPC分类号： H01L31/062
CPC分类号： H01L27/14609 , H01L27/14632 , H01L27/14656 , H01L27/14687 , H04N5/3597 , H04N5/3745
摘要： Disclosed is a image sensor (e.g., a CMOS image sensor) including pixels each having a transfer transistor and a drive transistor, in which the gate of at least one of the transistors has a boosting gate disposed over it comprised of a conductive film pattern with interposing an insulation film. Thus, a voltage applied to the boosting gate is capacitively coupled to at least one of the transfer gate of the transfer transistor and a drive gate of the drive transistor. The transfer gate is supplied with the sum of the transfer voltage and the boosting gate-coupling voltage as a result and there is no need for providing a high voltage generator for the image sensor. The dynamic range of operation may be enhanced if such a coupling voltage is applied to the drive gate of the drive transistor.
摘要翻译：公开了包括各自具有传输晶体管和驱动晶体管的像素的图像传感器（例如，CMOS图像传感器），其中至少一个晶体管的栅极具有设置在其上的升压栅极，该升压栅极包括导电膜图案，插入绝缘膜。因此，施加到升压栅极的电压电容耦合到传输晶体管的传输栅极和驱动晶体管的驱动栅极中的至少一个。因此，转移栅极被提供有转印电压和升压栅极耦合电压的总和，并且不需要为图像传感器提供高电压发生器。如果将这样的耦合电压施加到驱动晶体管的驱动栅极，则可以增强动态动作范围。

6. 发明授权

US06422489B1 Locking apparatus for a nozzle exchange apparatus 有权
公开(公告)号：US06422489B1
公开(公告)日：2002-07-23
申请号：US09955947
申请日：2001-09-20
申请人： Tae Seok Oh
发明人： Tae Seok Oh
IPC分类号： B05B100
摘要： A nozzle exchanging or mounting apparatus is provided for use in exchanging nozzles utilized for vacuum sucking a semiconductor device and various electric components in a surface mounting apparatus. The nozzle exchanging or mounting apparatus includes a nozzle installation body having a nozzle installation portion in which a plurality of nozzles can be disposed at a predetermined interval therebetween, a locking unit, the locking unit being longitudinally inserted into and installed at one side of the nozzle installation body, a bracket for inserting one side of the locking unit thereinto to fix the locking unit in place, and a driving unit for selectively moving the locking unit backward and forward. The apparatus provides the advantage that the time taken to exchange nozzle(s) can be reduced due to the stable and prompt exchange of the nozzle(s).

7. 发明授权

US09894301B2 CMOS image sensors with photogate structures and sensing transistors, operation methods thereof, and image processing systems including the same 有权
公开(公告)号：US09894301B2
公开(公告)日：2018-02-13
申请号：US14877539
申请日：2015-10-07
申请人： Young Gu Jin , Min Ho Kim , Tae Chan Kim , Dong Ki Min , Sang Chul Sul , Tae Seok Oh , Kwang Hyun Lee , Tae Yon Lee , Ju Hwan Jung
发明人： Young Gu Jin , Min Ho Kim , Tae Chan Kim , Dong Ki Min , Sang Chul Sul , Tae Seok Oh , Kwang Hyun Lee , Tae Yon Lee , Ju Hwan Jung
IPC分类号： H01L27/00 , H04N5/363 , H01L27/146 , H04N5/3745 , H04N5/374 , H04N5/378
CPC分类号： H04N5/363 , H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/14643 , H04N5/374 , H04N5/3742 , H04N5/3745 , H04N5/378
摘要： ACMOS image sensor includes a pixel array having a plurality of pixels. Each of the plurality of pixels includes: a photogate structure configured to be controlled based on a first gate voltage; and a sensing transistor including a charge pocket region formed in a substrate region, the sensing transistor being configured to be controlled based on a second gate voltage. Based on the first gate voltage, the photogate structure is configured to integrate charges generated in response to light incident on the substrate region. The sensing transistor is configured to adjust at least one of a threshold voltage of the sensing transistor and a current flow in the sensing transistor according to charges transferred from the photogate structure to the charge pocket region based on a difference between the first gate voltage and the second gate voltage.

8. 发明授权

US07875488B2 Method of fabricating image sensor having inner lens 有权
标题翻译：制造具有内透镜的图像传感器的方法
公开(公告)号：US07875488B2
公开(公告)日：2011-01-25
申请号：US11882155
申请日：2007-07-31
申请人： Jong-Wook Hong , Tae-Seok Oh , Duk-Min Yi , Young-Mook Oh , Won-Je Park
发明人： Jong-Wook Hong , Tae-Seok Oh , Duk-Min Yi , Young-Mook Oh , Won-Je Park
IPC分类号： H01L21/00 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14625 , H01L27/14636 , H01L27/14645 , H01L27/14687
摘要： A method of fabricating an image sensor according to example embodiments may include forming a photodiode in a photoelectric conversion region of a substrate and forming an etch stop layer on the substrate. The etch stop layer may be patterned to form an inner lens on the photoelectric conversion region and an etch stop layer pattern on a transistor region of the substrate. A metal interconnection structure may be formed on the inner lens and the etch stop layer pattern. Accordingly, the number of additional processes for fabricating an image sensor may be reduced.
摘要翻译：根据示例性实施例的制造图像传感器的方法可以包括在衬底的光电转换区域中形成光电二极管，并在衬底上形成蚀刻停止层。蚀刻停止层可以被图案化以在光电转换区域上形成内透镜，并且在衬底的晶体管区域上形成蚀刻停止层图案。可以在内透镜和蚀刻停止层图案上形成金属互连结构。因此，可以减少用于制造图像传感器的附加处理的数量。

9. 发明授权

US07687755B2 CMOS image sensor and operating method thereof 有权
标题翻译： CMOS图像传感器及其操作方法
公开(公告)号：US07687755B2
公开(公告)日：2010-03-30
申请号：US12071139
申请日：2008-02-15
申请人： Jeong-Hoon Bae , Tae-Seok Oh
发明人： Jeong-Hoon Bae , Tae-Seok Oh
IPC分类号： H01L31/112 , H01L27/30
CPC分类号： H01L27/14656 , H01L27/14603 , H04N5/3575 , H04N5/3592 , H04N5/374 , H04N5/3745
摘要： A CMOS image sensor may be provided. The CMOS image sensor may include at least one floating diffusion column line, a plurality of pixels, and/or a charge/voltage conversion circuit. The plurality of pixels may be connected to the floating diffusion column line in parallel. The charge/voltage conversion circuit may be connected to one end of the floating diffusion column line, and may detect a potential variation of the floating diffusion column line using a coupling capacitor.
摘要翻译：可以提供CMOS图像传感器。 CMOS图像传感器可以包括至少一个浮动扩散列线，多个像素和/或充电/电压转换电路。多个像素可以并联连接到浮动扩散柱线。充电/电压转换电路可以连接到浮动扩散列线的一端，并且可以使用耦合电容器来检测浮动扩散列线的电位变化。

10. 发明授权

US07573014B2 Image sensor with well regions of different depths and method of fabrication thereof 失效
标题翻译：具有不同深度的阱区域的图像传感器及其制造方法
公开(公告)号：US07573014B2
公开(公告)日：2009-08-11
申请号：US12119562
申请日：2008-05-13
申请人： Young-Hoon Park , Tae-Seok Oh , Eun-Soo Kim , June-Taeg Lee
发明人： Young-Hoon Park , Tae-Seok Oh , Eun-Soo Kim , June-Taeg Lee
IPC分类号： H01L27/00 , G01J3/50
CPC分类号： H01L31/02162 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L31/02161
摘要： Disclosed is an image sensor and method of fabricating the same. The image sensor includes a photoelectric transformation region formed in a semiconductor substrate, and pluralities of interlayer dielectric films formed over the photoelectric transformation regions. The interlayer dielectric films contain multilevel interconnection layers. A color filter layer is disposed in a well region formed in the interlayer dielectric films over the photoelectric transformation region. A passivation layer is interposed between the color filter layer and the interlayer dielectric films.
摘要翻译：公开了一种图像传感器及其制造方法。图像传感器包括形成在半导体衬底中的光电转换区域和形成在光电转换区域上的多个层间电介质膜。层间绝缘膜包含多层互连层。滤色器层设置在形成于光电转换区域的层间电介质膜的阱区中。钝化层插在滤色器层和层间绝缘膜之间。

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