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1. 发明申请

US20140231953A1 NAND FLASH MEMORY DEVICE 有权
标题翻译： NAND闪存存储器件
公开(公告)号：US20140231953A1
公开(公告)日：2014-08-21
申请号：US14248517
申请日：2014-04-09
申请人： Jong-Hoon NA , Young-Woo PARK , Dong-Hwa KWAK , Tae-Yong KIM , Jee-Hoon HAN , Jang-Hyun YOU , Dong-Sik LEE , Su-Jin PARK
发明人： Jong-Hoon NA , Young-Woo PARK , Dong-Hwa KWAK , Tae-Yong KIM , Jee-Hoon HAN , Jang-Hyun YOU , Dong-Sik LEE , Su-Jin PARK
IPC分类号： H01L27/02 , H01L27/11
CPC分类号： H01L27/0207 , H01L21/28273 , H01L27/11 , H01L27/11519 , H01L27/11524
摘要： A method of fabricating a nonvolatile memory device includes providing a substrate having active regions defined by a plurality of trenches, forming a first isolation layer on the substrate having the plurality of trenches, forming a sacrificial layer on the first isolation layer to fill the trenches, the sacrificial layer including a first region filling lower portions of the trenches and a second region filling portions other than the lower portions, removing the second region of the sacrificial layer, forming a second isolation layer on the first isolation layer and the first region of the sacrificial layer, forming air gaps in the trenches by removing the first region of the sacrificial layer, and removing a portion of the first isolation layer and a portion of the second isolation layer while maintaining the air gaps.
摘要翻译：一种制造非易失性存储器件的方法包括提供具有由多个沟槽限定的有源区的衬底，在具有多个沟槽的衬底上形成第一隔离层，在第一隔离层上形成牺牲层以填充沟槽，所述牺牲层包括填充所述沟槽的下部的第一区域和除所述下部以外的第二区域填充部分，去除所述牺牲层的所述第二区域，在所述第一隔离层上形成第二隔离层和在所述第一隔离层的所述第一区域牺牲层，通过去除牺牲层的第一区域在沟槽中形成气隙，以及在保持气隙的同时去除第一隔离层的一部分和第二隔离层的一部分。

2. 发明申请

US20130308174A1 OPTICAL MODULE FOR LASER BEAM SCAN 审中-公开
标题翻译：光束模块用于激光光束扫描
公开(公告)号：US20130308174A1
公开(公告)日：2013-11-21
申请号：US13767046
申请日：2013-02-14
申请人： Pil-Kyu KIM , Gyoo-Wan HAN , Je-Kil RYU , Tae-Yong KIM , Seok-Hwan KIM , Sung-Gon KIM
发明人： Pil-Kyu KIM , Gyoo-Wan HAN , Je-Kil RYU , Tae-Yong KIM , Seok-Hwan KIM , Sung-Gon KIM
IPC分类号： G02B26/08
CPC分类号： G02B26/0816 , B41J2/471 , G02B26/105
摘要： An optical module for irradiation of laser beams includes a mirror mount, a rotation shaft coupled to a center of the mirror mount, a vibration member coupled to one end of the mirror mount and the vibration member vibrating the end of the mirror mount in front-and-rear directions, a mirror fixed to the mirror mount and the mirror irradiating laser beams by performing reciprocal rotational motion with the mirror mount with respect to the rotation shaft, and a weight arranged on at least one of a first side and a second side of the mirror mount. The weight is interposed between the rotation shaft and the at least one of the first side and the second side to compensate concentricity of the mirror.
摘要翻译：用于照射激光束的光学模块包括反射镜安装件，联接到反射镜安装座的中心的旋转轴，耦合到反射镜安装座的一端的振动部件，振动部件在前后方向上振动反射镜安装座的端部，通过与反射镜安装件相对于旋转轴进行往复旋转运动，固定到反射镜安装座的反射镜和镜子照射激光束，以及配置在第一侧和第二侧中的至少一个上的重物的镜面安装。该重量插入在旋转轴与第一侧和第二侧中的至少一个之间以补偿反射镜的同心度。

3. 发明申请

US20110262797A1 BATTERY MODULE 有权
标题翻译：电池模块
公开(公告)号：US20110262797A1
公开(公告)日：2011-10-27
申请号：US12852800
申请日：2010-08-09
申请人： Tae-Yong KIM
发明人： Tae-Yong KIM
IPC分类号： H01M2/00
CPC分类号： H01M2/1077 , H01M2/1241 , H01M10/4207
摘要： A battery module, battery pack, and electric vehicle, the battery module including a plurality of unit battery cells; a pair of end plates coupled together in a spaced relationship for receiving the unit battery cells therebetween; and a pressure control unit between the unit battery cells and the at least one end plate.
摘要翻译：电池模块，电池组和电动车，所述电池模块包括多个单元电池单元; 一对端板以间隔的关系联接在一起，用于在其间接收单元电池单元; 以及在所述单元电池单元和所述至少一个端板之间的压力控制单元。

4. 发明申请

US20090191681A1 NOR-TYPE FLASH MEMORY DEVICE WITH TWIN BIT CELL STRUCTURE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：具有双位晶胞结构的NOR型闪存存储器件及其制造方法
公开(公告)号：US20090191681A1
公开(公告)日：2009-07-30
申请号：US12418639
申请日：2009-04-06
申请人： Jae-Man YOON , Suk-kang SUNG , Dong-Gun PARK , Choong-Ho LEE , Tae-Yong KIM
发明人： Jae-Man YOON , Suk-kang SUNG , Dong-Gun PARK , Choong-Ho LEE , Tae-Yong KIM
IPC分类号： H01L21/336
CPC分类号： H01L27/115 , H01L27/11568 , H01L29/7851
摘要： A NOR-type flash memory device comprises a plurality twin-bit memory cells arranged so that pairs of adjacent memory cells share a source/drain region and groups of four adjacent memory cells are electrically connected to each other by a single bitline contact.
摘要翻译： NOR型闪速存储器件包括多个双位存储器单元，其布置成使得相邻的存储单元对共享源极/漏极区域，并且四个相邻存储器单元的组通过单个位线接触彼此电连接。

5. 发明申请

US20130052515A1 BATTERY MODULE 有权
标题翻译：电池模块
公开(公告)号：US20130052515A1
公开(公告)日：2013-02-28
申请号：US13352488
申请日：2012-01-18
申请人： Shi-Dong PARK , Tae-Yong KIM
发明人： Shi-Dong PARK , Tae-Yong KIM
IPC分类号： H01M2/10
CPC分类号： H01M2/1077 , H01M2/10 , H01M2/20 , H01M2/206
摘要： There is provided a battery module including a first housing and a second housing, the first housing and the second housing each retaining a plurality of rechargeable batteries electrically connected to each other, the second housing being stacked on the first housing, and at least one of the rechargeable batteries retained by the second housing being coupled with at least one of the rechargeable batteries retained by the first housing; and a connecting member electrically connecting electrode terminals of the at least one rechargeable battery retained by the first housing and the at least one rechargeable battery retained by the second housing.
摘要翻译：提供了一种电池模块，包括第一壳体和第二壳体，第一壳体和第二壳体每个保持彼此电连接的多个可再充电电池，第二壳体堆叠在第一壳体上，并且至少之一由第二壳体保持的可再充电电池与由第一壳体保持的可再充电电池中的至少一个耦合; 以及电连接由所述第一壳体保持的所述至少一个可再充电电池的电极端子和由所述第二壳体保持的所述至少一个可再充电电池的连接构件。

6. 发明申请

US20110068772A1 APPARATUS AND METHOD FOR DETECTING MODE CHANGE IN AN ELECTRONIC DEVICE 有权
标题翻译：用于检测电子设备中的模式变化的装置和方法
公开(公告)号：US20110068772A1
公开(公告)日：2011-03-24
申请号：US12880546
申请日：2010-09-13
申请人： Sung-Su KIM , Man-Ho HAN , Tae-Yong KIM
发明人： Sung-Su KIM , Man-Ho HAN , Tae-Yong KIM
IPC分类号： G01R19/00 , G01R19/22
CPC分类号： H01H9/167 , H01H19/54
摘要： An apparatus and method for detecting a mode change in an electronic device are provided. The apparatus includes a rotary switch including a common port and a plurality of contact points corresponding to a plurality of modes, a comparator for comparing a voltage of the common port with a reference voltage to output a resultant signal, a measurement unit for measuring the voltage of the common port according to the resultant signal of the comparator, and a Micro Control Unit (MCU) for evaluating a changed mode based on the measured voltage.
摘要翻译：提供一种用于检测电子设备中的模式变化的装置和方法。该装置包括旋转开关，其包括公共端口和对应于多个模式的多个接触点，比较器，用于将公共端口的电压与参考电压进行比较以输出合成信号;测量单元，用于测量电压根据比较器的结果信号产生公共端口;以及微控制单元（MCU），用于基于测量的电压来评估改变的模式。

7. 发明申请

US20090092894A1 RECHARGEABLE BATTERY AND BATTERY MODULE 有权
标题翻译：可充电电池和电池模块
公开(公告)号：US20090092894A1
公开(公告)日：2009-04-09
申请号：US12126289
申请日：2008-05-23
申请人： Tae-Yong KIM
发明人： Tae-Yong KIM
IPC分类号： H01M6/42 , H01M2/02 , H01M2/24
CPC分类号： H01M2/204 , H01M2/023 , H01M2/105 , H01M2/34
摘要： A rechargeable battery having electrical stability includes an electrode assembly, a case, a cap assembly, and a spacer. The electrode assembly includes an anode, a cathode, and a separator interposed between the anode and the cathode. The case has an opening in which the electrode assembly is inserted and has a first thickness portion having a first thickness and a second thickness portion having a second thickness smaller than the first thickness. The cap assembly is coupled to the opening of the case and electrically connected to the electrode assembly. The spacer is fixed to an end of the case, and includes a supporting protrusion that engages with a portion of the case where the first thickness portion and the second thickness portion are connected to each other.
摘要翻译：具有电稳定性的可再充电电池包括电极组件，壳体，帽组件和间隔件。电极组件包括阳极，阴极和介于阳极和阴极之间的隔膜。壳体具有插入电极组件的开口，并且具有第一厚度的第一厚度部分和具有小于第一厚度的第二厚度的第二厚度部分。盖组件联接到壳体的开口并电连接到电极组件。间隔件被固定到壳体的一端，并且包括与第一厚度部分和第二厚度部分彼此连接的壳体的一部分接合的支撑突起。

8. 发明申请

US20090087724A1 RECHARGEABLE BATTERY 有权
标题翻译：可充电电池
公开(公告)号：US20090087724A1
公开(公告)日：2009-04-02
申请号：US12204038
申请日：2008-09-04
申请人： Tae-Yong KIM
发明人： Tae-Yong KIM
IPC分类号： H01M2/12 , H01M2/30
CPC分类号： H01M10/4235 , H01M2/0413 , H01M2/1229 , H01M2/348
摘要： A rechargeable battery includes an electrode assembly, a case, a cap assembly, and an arc interrupter. The electrode assembly includes an anode, a cathode, and a separator interposed between the anode and the cathode. The case houses the electrode assembly and has an opening for the electrode assembly, and the cap assembly is coupled to the opening of the case and is electrically connected to the electrode assembly. The arc interrupter includes an interrupting member movably disposed in the cap assembly and a driving member connected to the interrupting member to transfer the interrupting member.
摘要翻译：可充电电池包括电极组件，壳体，盖组件和电弧灭弧室。电极组件包括阳极，阴极和介于阳极和阴极之间的隔膜。壳体容纳电极组件并且具有用于电极组件的开口，并且帽组件联接到壳体的开口并且电连接到电极组件。电弧灭弧器包括可移动地设置在盖组件中的中断构件和连接到中断构件以传递中断构件的驱动构件。

9. 发明申请

US20070090443A1 METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED FLOATING GATE AND RELATED DEVICE 有权
标题翻译：制备具有自对准浮选门的半导体器件及其相关器件的方法
公开(公告)号：US20070090443A1
公开(公告)日：2007-04-26
申请号：US11425205
申请日：2006-06-20
申请人： Byung-Yong CHOI , Choong-Ho LEE , Tae-Yong KIM , Dong-Gun PARK
发明人： Byung-Yong CHOI , Choong-Ho LEE , Tae-Yong KIM , Dong-Gun PARK
IPC分类号： H01L21/336
CPC分类号： H01L27/1203 , H01L21/84 , H01L27/115 , H01L27/11521 , H01L29/66795 , H01L29/7851
摘要： A semiconductor device such as a flash memory device having a self-aligned floating gate and a method of fabricating the same is provided. An embodiment of the device includes an isolation layer defining a fin body is formed in a semiconductor substrate. The fin body has a portion protruding above the isolation layer. A sacrificial pattern is formed on the isolation layer. The sacrificial pattern has an opening self-aligned with the protruding portion of the fin body. The protruding fin body is exposed in the opening. An insulated floating gate pattern is formed to fill the opening. The sacrificial pattern is then removed. An inter-gate dielectric layer covering the floating gate pattern is formed. A control gate conductive layer is formed over the inter-gate dielectric layer. The control gate conductive layer, the inter-gate dielectric layer, and the floating gate pattern are patterned to form a control gate electrode crossing the fin body as well as the insulated floating gate interposed between the control gate electrode and the fin body.
摘要翻译：提供了诸如具有自对准浮动栅极的闪速存储器件及其制造方法的半导体器件。该器件的一个实施例包括在半导体衬底中形成限定翅片体的隔离层。翅片本体具有突出于隔离层上方的部分。在隔离层上形成牺牲图案。牺牲图案具有与翅片体的突出部分自对准的开口。突出的翅片体露出开口。形成绝缘浮栅图形以填充开口。然后去除牺牲图案。形成覆盖浮栅图案的栅极间介电层。在栅极间电介质层上形成控制栅极导电层。对控制栅极导电层，栅极间电介质层和浮置栅极图案进行图案化以形成跨越鳍体的控制栅电极以及插在控制栅电极和鳍体之间的绝缘浮栅。

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